Vishay-Intertech-VS-ST1000C20K1
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VS-ST1000C..K Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1473 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case K-PUK (A-24)
• High profile hockey PUK
• Material
categorization: for definitions of compliance
TYPICAL APPLICATIONS
• DC motor controls
K-PUK (A-24)
PRIMARY CHARACTERISTICS
• Controlled DC power supplies
I
T(AV)
1473 A
• AC controllers
1200 V, 1400 V, 1600 V, 1800 V,
2000 V, 2200 V, 2400 V
V
DRM
/V
RRM
V
TM
I
GT
T
J
1.80 V
100 mA
-40 °C to +125 °C
K-PUK (A-24)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
1473
UNITS
A
°C
A
I
T(AV)
T
hs
55
2913
I
T(RMS)
I
TSM
T
hs
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
20.0
A
21.2
2000
I
2
t
kA
2
s
1865
I
2
t
20 000
1200 to 2400
300
kA
2
s
V
V
DRM
/V
RRM
Range
Typical
Range
t
q
μs
T
J
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RSM
, MAXIMUM
V
RRM
, MAXIMUM REPETITIVE PEAK
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
VOLTAGE
CODE
NON-REPETITIVE PEAK REVERSE
TYPE NUMBER
REVERSE VOLTAGE
V
VOLTAGE
V
12
14
16
18
20
22
24
1200
1400
1600
1800
2000
2200
2400
1300
1500
1700
1900
2100
2300
2500
VS-ST1000C..K
100
Revision: 21-Sep-17
Document Number: 93714
1
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VS-ST1000C..K Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES
1473 (630)
55 (85)
6540
UNITS
A
°C
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
Maximum RMS on-state current
I
T(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
20.0
No voltage
reapplied
21.2
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM
kA
17.0
100 % V
RRM
reapplied
18.1
Sinusoidal half wave,
initial T
J
= T
J
maximum
2000
No voltage
reapplied
1865
Maximum I
2
t for fusing
I
2
t
kA
2
s
1445
100 % V
RRM
reapplied
1360
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
20 000
0.950
1.024
0.283
0.265
1.80
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
V
r
t2
V
TM
I
H
I
pk
= 3000 A, T
J
= 125 °C, t
p
= 10 ms sine pulse
600
T
J
= 25 °C, anode supply 12 V resistive load
mA
Typical latching current
I
L
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
Typical delay time
t
d
t
q
1.9
μs
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
Typical turn-off time
300
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
500
V/μs
Maximum peak reverse and
off-state leakage current
I
RRM
I
DRM
,
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
100
mA
Revision: 21-Sep-17
Document Number: 93714
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST1000C..K Series
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
T
J
= T
J
maximum, t
p
5 ms
16
3
W
A
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
T
J
= T
J
maximum, f = 50 Hz, d% = 50
3.0
20
5.0
+V
GM
-V
GM
T
J
= T
J
maximum, t
p
5 ms
V
T
J
= -40 °C
T
J
= 25 °C
200
100
50
–
200
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
V
Maximum required gate trigger/
T
J
= 125 °C
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
1.4
1.1
0.9
–
V
GT
3.0
–
Maximum gate current/voltage
not to trigger is the maximum
T
J
= T
J
maximum value
which will not trigger any
unit with rated V
DRM
anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10
mA
V
V
GD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.042
UNITS
Maximum operating temperature range
Maximum storage temperature range
T
J
°C
T
Stg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
R
thJ-hs
0.021
K/W
0.006
Maximum thermal resistance,
case to heatsink
R
thC-hs
0.003
24 500
(2500)
N
(kg)
Mounting force,
10 %
Approximate weight
Case style
425
g
See dimensions – link at the end of datasheet
K-PUK (A-24)
R
thJC
CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
180°
120°
90°
0.003
0.004
0.005
0.007
0.012
0.003
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93714
3
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DiodesAmericas@vishay.com
,
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VS-ST1000C..K Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST1000C..K series
(double side cooled)
ST1000C..K series
(
s
ingle side cooled)
R
thJ-hs
(D
C
) =
0
.042 K/W
R
(DC) = 0.021 K/W
thJ-hs
Conduction Angle
Conduction Period
80
30˚
60˚
70
90˚
30°
60°
120˚
60
90°
180˚
120°
80
50
DC
180°
40
70
0
400
800 1200 1600
2000 2400
0
100 200 300 400 500 600 700
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – Current Ratings Characteristics
3000
2500
2000
1500
1000
500
130
120
110
100
90
ST1000C..K Series
180˚
120˚
90˚
(
single side cooled)
R
thJ-hs
(D
C
) =
0
.042 K/W
60˚
RMS limit
30˚
Conduction Period
30°
Conduction Angle
60°
90°
ST1000C..K series
T
J
= 125˚C
80
120°
180°
DC
800 1000
70
0
0
400
800
1200
1600
0
200
400
600
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – On-State Power Loss Characteristics
4000
130
120
110
100
90
DC
180˚
120˚
90˚
60˚
30˚
ST1000C..K Series
(double side cooled)
3500
3000
2500
2000
1500
1000
500
R
(DC) = 0.021 K/W
thJ-hs
Conduction Angle
RMS limit
30˚
400
80
60˚
90˚
Conduction period
70
120˚
180˚
60
ST1000C..K series
T
J
= 125 ˚C
50
0
40
0
500
1000
1500
2000
2500
0
800
1200
1600
Average On-State Current (A)
Fig. 6 – On-State Power Loss Characteristics
Averag
e
O
n-Stat
e
C
urren
t
(
A)
Fig. 3 – Current Ratings Characteristics
Revision: 21-Sep-17
Document Number: 93714
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST1000C..K Series
Vishay Semiconductors
18 000
16 000
14 000
12 000
10 000
8000
22 000
20 000
18 000
16 000
14 000
12 000
10 000
8000
Maximum non repetitive surge current
vs. pulse train duration.
At any rated load condition and with
rated V
RRM
applied following surge.
Control of conduction may not be maintained.
Initial T
= 125 ˚C
J
Initial T
= 125 °C
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No voltage reapplied
Rated
V
RRM
reapplied
ST1000C..K series
ST1000C..K series
10
6000
6000
0.01
0.1
1
1
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 7 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
T =
25 ˚C
J
T
J
= 12
5
˚
C
1000
ST1000C..K series
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-State Voltage (V)
Fig. 9 – On-State Voltage Drop Characteristics
0.1
Steady state value
R
thJ-hs
= 0.42 K/W
(single side cooled)
R
thJ-hs
= 0.21 K/W
(double side cooled)
(DC operation)
0.01
ST1000C..K series
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 – Thermal Impedance Z
thJ-hs
Characteristics
Revision: 21-Sep-17
Document Number: 93714
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST1000C..K Series
Vishay Semiconductors
100
(1) PGM = 16 W, t
(2) PGM = 30 W, t
(3) PGM = 60 W, t
p
p
p
= 4 ms
= 2 ms
= 1 ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20 V, 10
Ω
; t
r
1 ꢀs
b) Recommended load line for
>= 30 % rated di/dt : 10 V, 10
Ω
t
r
<= 1 ꢀs
(a)
10
1
(b)
(2) (3)
(1)
VGD
IGD
Frequency limited by PG(AV)
Device: ST100C..K series
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
0
C
24
K
1
–
1
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
–
–
–
–
Vishay Semiconductors product
Thyristor
Essential part number
0 = converter grade
–
–
–
–
C = ceramic PUK
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
K = PUK case K-PUK (A-24)
0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
9
–
Critical dV/dt:
none = 500 V/ꢀs (standard selection)
L = 1000 V/ꢀs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 21-Sep-17
Document Number: 93714
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Outline Dimensions
Vishay Semiconductors
K-PUK (A-24)
DIMENSIONS
in millimeters (inches)
Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum
1 (0.04) MIN.
2 places
47.5 (1.87) DIA. MAX.
2 places
C
G
Pin receptable
AMP. 60598-1
27.5 (1.08) MAX.
A
Note:
A = Anode
C = Cathode
G
=
G
ate
67 (2.6) DIA. MAX.
20° 5°
4.75 (0.2) NOM.
44 (1.73)
2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95081
1
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,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
Document Number: 91000
1
