Vishay-Intertech-VS-ST110S16M1PBF
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VS-ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• Center gate
• International standard case TO-94 (TO-209AC)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic
glass-metal case with ceramic insulator
(Glass-metal seal over 1200 V)
TO-94 (TO-209AC)
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
• DC motor controls
I
T(AV)
110 A
V
DRM
/V
RRM
400 V, 800 V, 1200 V, 1600 V
1.52 V
• Controlled DC power supplies
• AC controllers
V
TM
I
GT
150 mA
T
J
-40 °C to +125 °C
TO-94 (TO-209AC)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
110
UNITS
A
I
T(AV)
T
C
90
°C
I
T(RMS)
175
50 Hz
60 Hz
50 Hz
60 Hz
2700
A
I
TSM
2830
36.4
I
2
t
kA
2
s
33.2
V
DRM
/V
RRM
400 to 1600
100
V
t
q
Typical
μs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM NON-REPETITIVE
I
DRM
/I
RRM
MAXIMUM AT
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
T
J
= T
J
MAXIMUM
mA
04
08
12
16
400
800
500
900
VS-ST110S
20
1200
1600
1300
1700
Revision: 27-Sep-17
Document Number: 94393
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST110SPbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave
DC at 85 °C case temperature
VALUES
110
UNITS
A
Maximum average on-state current
at case temperature
90
°C
Maximum RMS on-state current
I
T(RMS)
175
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
2700
2830
2270
2380
36.4
33.2
25.8
23.5
364
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
kA
2
s
100 % V
RRM
reapplied
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
0.90
0.92
1.79
1.81
1.52
600
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
V
r
t2
V
TM
I
H
I
pk
= 350 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
Maximum holding current
T
J
= 25 °C, anode supply 12 V resistive load
mA
Typical latching current
I
L
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
500
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
2.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 100 A, T
J
= T
J
maximum, dI/dt = 10 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
V/μs
off-state voltage
Maximum peak reverse and
off-state leakage current
I
RRM
,
20
mA
I
DRM
Revision: 27-Sep-17
Document Number: 94393
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST110SPbF Series
Vishay Semiconductors
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
TYP.
MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
5
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= -40 °C
1
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
2.0
20
5.0
+ V
GM
– V
GM
V
180
90
–
150
–
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
mA
Maximum require
d
g
at
e
t
rigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
40
2.9
1.8
1.2
–
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
I
GD
3.0
–
V
Maximum gate current/voltage
not to trigger is the maximum
10
mA
T
J
= T
J
maximum value
which will not trigger any
unit with rated V
DRM
anode to
cathode applied
DC gate voltage not to trigger
V
GD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
T
J
-40 to 125
-40 to 150
0.195
°C
Maximum storage temperature range
T
Stg
Maximum thermal resistance,
junction to case
R
thJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased
0.08
Non-lubricated threads
Lubricated threads
15.5 (137)
14 (120)
130
Nm
(lbf · in)
Mounting torque,
10 %
Approximate weight
Case style
g
See dimensions – link at the end of datasheet
TO-94 (TO-209AC)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.035
0.041
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94393
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST110SPbF Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST110S Series
thJC
ST110S Series
thJC
R
(DC) = 1.95 K/W
R
(DC) = 0.195 K/W
Conduction Period
Conduction Angle
30°
60°
30°
90°
120°
60°
60
90°
120°
180°
DC
180°
80
80
0
20
40
80
100 120
0
20 40 60 80
100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
160
180°
0
.
3
120°
K
140
/
W
90°
0
.
5
60°
K
/
120
W
30°
100
0
RMS Limit
.
8
K
/
W
1
80
60
40
20
0
K
/
W
Conduction Angle
ST110S Series
T
= 125°C
J
0
20
40
60
80
100
1
2
0
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 – On-State Power Loss Characteristics
220
200
180
160
140
120
100
80
R
DC
180°
120°
90°
t
h
S
A
=
0
.
1
K/
W
–
0
60°
D
.
4
e
K
/
l
t
a
30°
W
R
RMS Limit
Conduction Period
ST110S Series
60
40
T
= 125°C
20
J
0
0
20 40 60 80
100 120 140 160 1
8
0
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 – On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94393
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST110SPbF Series
Vishay Semiconductors
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
2400
2200
2000
1800
1600
1400
1200
1000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T
= 125°C
J
Initial T
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST110S Series
ST110S Series
0.1
1
10
100
0.01
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
10000
1000
100
Tj = 25˚C
Tj = 125˚C
ST110S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-state Voltage (V)
Fig. 7 – On-State Voltage Drop Characteristics
1
0.1
Steady State Value
= 0.195 K/W
R
thJC
(DC Operation)
0.01
0.001
ST110S Series
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 – Thermal Impedance Z
thJC
Characteristic
Revision: 27-Sep-17
Document Number: 94393
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST110SPbF Series
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 10W,
tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W,
tp = 2ms
(3) PGM = 40W,
tp = 1ms
(4) PGM = 60W,
tp = 0.66ms
(a)
10
1
(b)
(3)
(1) (2)
(4)
VGD
IGD
Frequency Limited by PG(AV)
10
Device: ST110S Series
0.1
0.1
0.001
0.01
1
100
Instantaneous Gate Current (A)
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
11
0
S
16
P
0
V
L
PbF
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
6
7
8
–
–
–
–
Vi
s
hay
S
emiconductor
s
product
Thyri
s
tor
E
ss
ential part marking
0 = converter grade
–
–
–
–
S
= compre
ss
ion bonding
s
tud
Voltage code x 100 = V
RRM
(
s
ee Voltage Rating
s
table)
P =
s
tud ba
s
e 20UNF thread
s
0 = eyelet terminal
s
(gate and auxiliary cathode lead
s
)
1 = fa
s
t-on terminal
s
(gate and auxiliary cathode lead
s
)
2 = flag terminal
s
(for cathode and gate terminal
s
)
9
–
–
V = gla
ss
-metal
s
eal (only up to 1200 V)
None = ceramic hou
s
ing (over 1200 V)
Critical dV/dt:
10
None = 500 V/μ
s
(
s
tandard value)
L = 1000 V/μ
s
(
s
pecial
s
election)
11
–
–
None =
s
tandard production
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94393
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST110S Series
DIMENSIONS
in millimeters (inches)
Glass metal seal
2.6 (0.10) MAX.
16.5 (0.65) MAX.
Ø 8.5 (0.33)
) MIN.
Ø 4.3 (0.17)
9.5 (0.37
Flexible lead
20 (0.79) MIN.
C.S. 16 mm
2
(0.025 s.i.)
C.S. 0.4 mm
2
(0.0006 s.i.)
Red silicon rubber
Red cathode
157 (6.18)
170 (6.69)
215 10
(8.46 0.39)
White gate
Fast-on terminals
Red shrink
70 (2.75)
MIN.
AMP. 280000-1
REF-250
White shrink
29 (1.14)
MAX.
Ø 23.5 (0.93) MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2″-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95078
Revision: 23-Sep-08
1
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST110S Series
DIMENSIONS
in millimeters (inches)
Ceramic housing
2.6 (0.10) MAX.
16.5 (0.65) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
9.5 (0.37) MIN.
Flexible lead
20 (0.79) MIN.
C.S. 16 mm
2
(0.025 s.i.)
C.S. 0.4 mm
2
(0.0006 s.i.)
Red silicon rubber
Red cathode
157 (6.18)
215 10
(8.46 0.39)
170 (6.69)
White gate
Red shrink
70 (2.75)
MIN.
White shrink
Ø 22.5 (0.88) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2″-20UNF-2A
29.5 (1.16) MAX.
2
Document Number: 95078
Revision: 23-Sep-08
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 01-Jan-2023
Document Number: 91000
1
