Vishay-Intertech-VS-ST1230C08K1
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VS-ST1230C..K Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1745 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case K-PUK (A-24)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
TYPICAL APPLICATIONS
• DC motor controls
K-PUK (A-24)
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
I
T(AV)
1745 A
V
DRM
/V
RRM
V
TM
800 V, 1200 V, 1400 V, 1600 V
1.62 V
I
GT
100 mA
T
J
-40 °C to +125 °C
K-PUK (A-24)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
1745
55
A
°C
A
I
T(AV)
T
hs
3200
I
T(RMS)
I
TSM
I
2
t
T
hs
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
33 500
35 100
5615
A
kA
2
s
5126
V
DRM
/V
RRM
800 to 1600
200
V
t
q
Typical
μs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
NON-REPETITIVE PEAK VOLTAGE
AT T
J
= T
J
MAXIMUM
V
V
mA
08
12
14
16
800
900
1200
1400
1600
1300
1500
1700
VS-ST1230C..K
100
Revision: 27-Sep-17
Document Number: 94395
1
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,
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VS-ST1230C..K Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES
1745 (700)
55 (85)
3200
UNITS
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
°C
Maximum RMS on-state current
I
T(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
33 500
35 100
28 200
29 500
5615
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms
No voltage
reapplied
t = 8.3 ms
5126
Maximum I
2
t for fusing
I
2
t
kA
2
s
t = 10 ms
3971
100 % V
RRM
reapplied
t = 8.3 ms
3625
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
56 150
0.93
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
V
1.02
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
0.17
m
V
r
t2
0.16
V
TM
I
H
I
pk
= 4000 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
1.62
Maximum holding current
600
T
J
= 25 °C, anode supply 12 V resistive load
mA
Typical latching current
I
L
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.9
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
Typical turn-off time
200
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
V/μs
off-state voltage
Maximum peak reverse and
off-state leakage current
I
RRM
,
100
mA
I
DRM
Revision: 27-Sep-17
Document Number: 94395
2
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VS-ST1230C..K Series
Vishay Semiconductors
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
typ.
Max.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
16
3
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
3.0
20
5.0
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
V
T
J
= -40 °C
T
J
= 25 °C
200
100
50
–
200
–
DC gate current required to trigger
I
GT
mA
Maximum required gate trigger/
T
J
= 125 °C
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
1.4
1.1
0.9
–
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
V
GT
I
GD
3.0
–
V
mA
V
Maximum gate current/
voltage not to trigger is the
10
T
J
= T
J
maximum maximum
value which will not
trigger any unit with rated V
DRM
V
GD
0.25
anode to cathode applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
T
J
-40 to 125
°C
Maximum storage temperature range
T
Stg
-40 to 150
0.042
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
R
thJ-hs
R
thC-hs
0.021
K/W
0.006
Maximum thermal resistance,
case to heatsink
0.003
24 500
(2500)
N
(kg)
Mounting force,
10 %
Approximate weight
Case style
425
g
See dimensions – link at the end of datasheet
K-PUK (A-24)
R
thJC
CONDUCTION
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
0.002
DOUBLE SIDE
0.002
180°
120°
90°
0.003
0.004
0.005
0.007
0.012
0.003
0.004
0.005
0.007
0.012
0.004
0.004
0.005
0.005
T
J
= T
J
maximum
K/W
60°
0.007
0.007
30°
0.012
0.012
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94395
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,
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VS-ST1230C..K Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST1230C..K Series
ST1230C..K Series
(Single Side Cooled)
(DC) = 0.042 K/W
(Double Side Cooled)
R
(DC) = 0.021 K/W
R
thJ-hs
thJ-hs
Conduction Period
80
Conduction Angle
30˚
70
30˚
80
60˚
60˚
60
70
90˚
90˚
50
120˚
180˚
60
40
120˚
50
30
180˚
DC
20
40
0
500 1000
1500 2000 2500 3000 3500
0
200 400 600 800
1000 1200 1400
Averag
e
O
n-stat
e
C
urren
t
(
A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – Current Ratings Characteristics
130
4000
ST1230C..K Series
180˚
120˚
90˚
60˚
120
110
100
90
(Single Side Cooled)
(DC) = 0.042 K/W
3500
R
thJ-hs
3000
30˚
2500
2000
1500
1000
500
RMS Limit
Conduction Period
80
70
60
Conduction Angle
30˚
50
60˚
90˚
40
ST1230C..K Series
120˚
T
= 125˚C
180˚
30
J
DC
20
0
0
400
800
1200 1600 2000
0
400 800
1200 1600 2000 2400
Average On-state Current (A)
Averag
e
O
n-stat
e
C
urren
t
(
A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – On-State Power Loss Characteristics
130
5000
ST1230C..K Series
DC
180˚
120˚
90˚
60˚
30˚
120
110
100
90
(Double Side Cooled)
R
(DC) = 0.021 K/W
thJ-hs
4000
3000
2000
1000
0
Conduction Angle
RMS Limit
80
70
30˚
Conduction Period
60˚
60
90˚
120˚
50
ST1230C..K Series
180˚
T
= 125˚C
J
40
30
0
500
1000 1500 2000 2500
0
500 1000
1500 2000 2500 3000 3500
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 – Current Ratings Characteristics
Fig. 6 – On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94395
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DiodesAmericas@vishay.com
,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST1230C..K Series
Vishay Semiconductors
30000
28000
26000
24000
22000
20000
18000
16000
14000
34000
32000
30000
28000
26000
24000
22000
20000
18000
16000
14000
12000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125˚C
Rated V
Applied Following Surge.
RRM
Initial T
= 125˚C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
RRM
Reapplied
ST1230C..K Series
ST1230C..K Series
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 7 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T =
25˚C
J
1000
T =
125˚C
J
ST1230C..K Series
100
0.5
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 – On-State Voltage Drop Characteristics
2
2.5
3
0.1
0.01
Steady State Value
= 0.042 K/W
R
thJ-hs
(Single Side Cooled)
= 0.021 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST1230C..K Series
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 – Thermal Impedance Z
thJ-hs
Characteristics
Revision: 27-Sep-17
Document Number: 94395
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST1230C..K Series
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 16W,
tp = 4ms
(2) PGM = 30W,
tp = 2ms
(3) PGM = 60W,
tp = 1ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
10
1
(a)
(b)
(3)
(2)
(1)
VGD
IGD
Device: ST1230C..K Series
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
V
S
–
S
T 12
3
0
C
16
K
1
–
1
2
3
4
5
6
7
8
9
1
2
3
–
–
Vi
s
hay
S
emiconductor
s
product
Thyristor
–
–
E
ss
ential part number
0 = converter grade
4
5
6
7
8
–
–
–
–
C = ceramic PUK
Voltage code x 100 = V
RRM
(
s
ee Voltage Rating
s
table)
K = PUK ca
s
e K-PUK (A-24)
0 = eyelet terminal
s
(gate and auxiliary cathode un
s
oldered lead
s
)
1 = fa
s
t-on terminal
s
(gate and auxiliary cathode un
s
oldered lead
s
)
2 = eyelet terminal
s
(gate and auxiliary cathode
s
oldered lead
s
)
3 = fa
s
t-on terminal
s
(gate and auxiliary cathode
s
oldered lead
s
)
9
–
Critical dV/dt:
None = 500 V/μ
s
(
s
tandard
s
election)
L = 1000 V/μ
s
(
s
pecial
s
election)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94395
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Outline Dimensions
Vishay Semiconductors
K-PUK (A-24)
DIMENSIONS
in millimeters (inches)
Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum
1 (0.04) MIN.
2 places
47.5 (1.87) DIA. MAX.
2 places
C
G
Pin receptable
AMP. 60598-1
27.5 (1.08) MAX.
A
Note:
A = Anode
C = Cathode
G
=
G
ate
67 (2.6) DIA. MAX.
20° 5°
4.75 (0.2) NOM.
44 (1.73)
2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95081
1
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
Document Number: 91000
1
