Vishay-Intertech-VS-ST180C20C0
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VS-ST180C Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 350 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
TYPICAL APPLICATIONS
• DC motor controls
A-PUK (TO-200AB)
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
I
T(AV)
350 A
400 V, 800 V, 1200 V, 1600 V,
1800 V, 2000 V
V
DRM
/V
RRM
V
TM
I
GT
T
J
1.96 V
90 mA
-40 °C to +125 °C
A-PUK (TO-200AB)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
350
UNITS
A
°C
A
I
T(AV)
T
hs
55
660
I
T(RMS)
I
TSM
I
2
t
T
hs
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
5000
A
5230
125
kA
2
s
114
V
DRM
/V
RRM
400 to 2000
100
V
t
q
Typical
μs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE
AT T
J
= T
J
MAXIMUM
V
mA
04
08
12
16
18
20
400
800
500
900
1200
1600
1800
2000
1300
1700
1900
2100
VS-ST180C..C
30
Revision: 27-Sep-17
Document Number: 94396
1
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VS-ST180C Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES
350 (140)
55 (85)
660
UNITS
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
°C
Maximum RMS on-state current
I
T(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5000
5230
4200
4400
125
No voltage
reapplied
A
Maximum peak, one-cycle
I
TSM
non-repetitive surge current
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
114
Maximum I
2
t for fusing
I
2
t
kA
2
s
88
100 % V
RRM
reapplied
81
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
1250
1.08
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
V
1.14
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
1.18
m
V
r
t2
1.14
V
TM
I
H
I
pk
= 750 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
1.96
Maximum holding current
600
T
J
= 25 °C, anode supply 12 V resistive load
mA
Maximum (typical) latching current
I
L
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
V/μs
off-state voltage
Maximum peak reverse and
off-state leakage current
I
RRM
,
30
mA
I
DRM
Revision: 27-Sep-17
Document Number: 94396
2
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VS-ST180C Series
Vishay Semiconductors
TRIGGERING
VALUES
typ. max.
UNIT
S
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
Maximum peak gate power
P
GM
P
G(AV)
I
GM
10
2.0
3.0
20
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
V
5.0
T
J
= – 40 °C
T
J
= 25 °C
180
90
–
150
–
DC gate current required to trigger
I
GT
mA
Maximum required gate trigger/
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
40
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
2.9
1.8
1.2
–
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
V
GT
I
GD
3.0
–
V
mA
V
Maximum gate current/voltage not
to trigger is the maximum value
10
T
J
= T
J
maximum which
will not trigger any unit with
rated V
DRM
anode to cathode
applied
V
GD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
UNIT
S
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum operating junction
temperature range
T
J
-40 to 125
°C
Maximum storage temperature range
T
Stg
-40 to 150
0.17
DC operation single side cooled
Maximum thermal resistance,
junction to heatsink
R
thJ-hs
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
0.08
K/W
0.033
0.017
Maximum thermal resistance,
case to heatsink
R
thC-hs
4900
(500)
N
(kg)
Mounting force,
10 %
Approximate weight
Case style
50
g
See dimensions – link at the end of datasheet
A-PUK (TO-200AB)
R
thJC
CONDUCTION
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
0.011
DOUBLE SIDE
0.011
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.015
0.019
0.024
0.035
0.060
0.019
0.019
0.026
0.026
T
J
= T
J
maximum
K/W
60°
0.036
0.037
30°
0.060
0.061
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94396
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,
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VS-ST180C Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST180C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
ST180C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
Ø
Ø
80
Conduction angle
Conduction period
70
80
60
70
30°
50
180°
180°
60
90°
40
DC
30°
50
60°
90°
30
60°
120°
200
120°
400
20
40
0
50
100
150
250
0
100
200
300
500
600
700
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – Current Ratings Characteristics
130
120
110
100
90
1000
900
800
700
600
500
400
300
200
100
0
180°
120°
90°
60°
30°
ST180C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
RMS limit
Ø
80
Conduction period
70
60
Ø
50
Conduction angle
30°
DC
40
90°
ST180C..C Series
T
J
= 125 °C
180°
30
60°
120°
200
20
0
100
300
400
0
50 100
150 200 250 300 350 400 450
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – On-State Power Loss Characteristics
130
120
110
100
90
1300
DC
180°
120°
90°
60°
30°
ST180C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.17 K/W
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
RMS limit
Ø
80
Conduction angle
70
60
30°
Ø
Conduction period
180°
50
40
ST180C..C Series
T
J
= 125 °C
30
60°
90°
120°
20
0
50 100
150 200 250 300 350 400 450
0
100
200
300
400
500
600
700
Average On-State Current (A)
Average On-State Current (A)
Fig. 6 – On-State Power Loss Characteristics
Fig. 3 – Current Ratings Characteristics
Revision: 27-Sep-17
Document Number: 94396
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VS-ST180C Series
Vishay Semiconductors
4500
4000
3500
3000
2500
2000
5000
4500
4000
3500
3000
2500
2000
At any rated load condition and with
rated V
RRM
applied following surge
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
RRM
Reapplied
ST180C..C Series
ST180C..C Series
1
10
100
0.01
0.1
1
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Pulse Train Duration (s)
Fig. 7 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
T
J
= 25 °C
T
J
= 125 °C
1000
ST180C..C Series
100
1
2
3
4
5
6
Instantaneous On-State Voltage (V)
Fig. 9 – On-State Voltage Drop Characteristics
1
0.1
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
0.01
0.001
ST180C..C Series
1
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 10 – Thermal Impedance Z
thJ-hs
Characteristics
Revision: 27-Sep-17
Document Number: 94396
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VS-ST180C Series
Vishay Semiconductors
100
(1) P
GM
= 10 W,
t
p
= 4 ms
(2) P
GM
= 20 W,
t
p
= 2 ms
(3) P
GM
= 40 W,
t
p
= 1 ms
(4) P
GM
= 60 W,
t
p
= 0.66 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10
Ω
; t
r
≤
1 µs
b) Recommended load line for
≤
30 % rated dI/dt: 10 V, 10
Ω
t
r
≤
1 µs
(a)
10
(b)
1
(3) (4)
(1)
(2)
V
GD
I
GD
0.01
Frequency limited by P
G(AV)
10
Device: ST180C..C Series
0.1
0.1
0.001
1
100
Instantaneous Gate Current (A)
Fig. 11 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
V
S
–
S
T
18
0
C
20
C
1
–
1
2
3
4
5
6
7
8
9
1
2
3
–
–
–
–
Vi
s
hay
S
emiconductor
s
product
Thyri
s
tor
E
ss
ential part number
0 = converter grade
4
5
6
7
8
–
–
–
–
C = ceramic PUK
Voltage code x 100 = V
RRM
(
s
ee Voltage Rating
s
table)
C = PUK ca
s
e A-PUK (TO-200AB)
0 = eyelet terminal
s
(gate and auxiliary cathode un
s
oldered lead
s
)
1 = fa
s
t-on terminal
s
(gate and auxiliary cathode un
s
oldered lead
s
)
2 = eyelet terminal
s
(gate and auxiliary cathode
s
oldered lead
s
)
3 = fa
s
t-on terminal
s
(gate and auxiliary cathode
s
oldered lead
s
)
9
–
Critical dV/dt:
None = 500 V/μ
s
(
s
tandard
s
election)
L = 1000 V/μ
s
(
s
pecial
s
election)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94396
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Outline Dimensions
Vishay Semiconductors
A-PUK (TO-200AB)
DIMENSIONS
in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
C
G
13.7/14.4
(0.54/0.57)
A
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
Note:
A = Anode
C = Cathode
G
=
G
ate
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95074
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
Document Number: 91000
1
