Vishay-Intertech-VS-ST230C08C1
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VS-ST230C Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 410 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material
categorization: For definitions of compliance
TYPICAL APPLICATIONS
• DC motor controls
A-PUK (TO-200AB)
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
I
T(AV)
410 A
400 V, 800 V, 1200 V, 1400 V,
1600 V, 1800 V, 2000 V
V
DRM
/V
RRM
V
TM
I
GT
T
J
1.69 V
90 mA
-40 °C to +125 °C
A-PUK (TO-200AB)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
410
UNITS
A
°C
A
I
T(AV)
T
hs
55
780
I
T(RMS)
I
TSM
I
2
t
T
hs
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
5700
A
5970
163
kA
2
s
149
V
DRM
/V
RRM
400 to 2000
100
V
t
q
Typical
μs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM
V
RSM
, MAXIMUM
I
DRM
/I
RRM,
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
VOLTAGE REPETITIVE
PEAK AND OFF-STATE
TYPE NUMBER
NON-REPETITIVE PEAK VOLTAGE
V
CODE
VOLTAGE
V
04
08
12
14
16
18
20
400
800
500
900
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
VS-ST230C..C
30
Revision: 27-Sep-17
Document Number: 94398
1
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VS-ST230C Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES
410 (165)
55 (85)
780
UNITS
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
°C
Maximum RMS on-state current
I
T(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5700
5970
4800
5000
163
No voltage
reapplied
A
Maximum peak, one-cycle
I
TSM
non-repetitive surge current
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
148
Maximum I
2
t for fusing
I
2
t
kA
2
s
115
100 % V
RRM
reapplied
105
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
1630
0.92
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
V
0.98
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
0.88
m
V
r
t2
0.81
V
TM
I
H
I
pk
= 880 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
1.69
Maximum holding current
600
T
J
= 25 °C, anode supply 12 V resistive load
mA
Maximum (typical) latching current
I
L
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
V/μs
of off-state voltage
Maximum peak reverse and
off-state leakage current
I
RRM
,
30
mA
I
DRM
Revision: 27-Sep-17
Document Number: 94398
2
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,
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VS-ST230C Series
Vishay Semiconductors
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
TYP.
MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
10.0
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
2.0
3.0
20
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
T
J
= T
J
maximum, t
p
5 ms
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
V
5.0
T
J
= – 40 °C
T
J
= 25 °C
180
90
–
150
–
DC gate current required to trigger
I
GT
mA
Maximum required gate trigger/
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
40
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.9
1.8
1.2
–
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
V
GT
I
GD
3.0
–
V
mA
V
Maximum gate current/voltage
not to trigger is the maximum
10
T
J
= T
J
maximum value
which will not trigger any
unit with rated V
DRM
anode to
cathode applied
V
GD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.17
UNITS
Maximum operating temperature range
Maximum storage temperature range
T
J
°C
T
Stg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
R
thJ-hs
R
thC-hs
0.08
K/W
0.033
Maximum thermal resistance,
case to heatsink
0.017
4900
(500)
N
(kg)
Mounting force,
10 %
Approximate weight
Case style
50
g
See dimensions – link at the end of datasheet
A-PUK (TO-200AB)
R
thJC
CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.015
DOUBLE SIDE
0.017
SINGLE SIDE
0.011
DOUBLE SIDE
0.011
180°
120°
90°
0.018
0.019
0.019
0.019
0.024
0.024
0.026
0.026
T
J
= T
J
maximum
K/W
60°
0.035
0.035
0.036
0.036
30°
0.060
0.060
0.060
0.061
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94398
3
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,
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VS-ST230C Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST230C..C Series
(Double Side Cooled)
ST230C..C Series
(Single Side Cooled)
(DC) = 0.17 K/W
R
(DC) = 0.08 K/W
R
thJ-hs
thJ-hs
Conduction Period
80
Conduction Angle
70
80
30°
30°
60
60°
70
60°
90°
90°
50
120°
60
120°
40
180°
180°
50
30
DC
40
20
0
40 80
120 160 200 240 280 320
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – Current Ratings Characteristics
130
1100
ST230C..C Series
(Single Side Cooled)
180°
120°
90°
60°
30°
120
110
100
90
1000
900
800
700
600
500
400
300
200
100
0
R
(DC) = 0.17 K/W
thJ-hs
RMS Limit
Conduction Period
80
70
60
Conduction Angle
30°
60°
50
90°
ST230C..C Series
= 125°C
40
T
120°
J
30
180°
DC
20
0
100
200
300
400
500
0
100 200 300 400 500 600
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – On-State Power Loss Characteristics
1400
DC
130
ST230C..C Series
120
110
100
90
180°
120°
90°
60°
(Double Side Cooled)
1200
R
(DC) = 0.08 K/W
thJ-hs
1000
30°
800
Conduction Angle
80
RMS Limit
70
600
30°
Conduction Period
60
60°
400
90°
50
120°
180°
ST230C..C Series
40
200
0
T
= 125°C
J
30
20
0
200
400
600
800 1000
0
100 200 300 400 500 600
Average On-state Current (A)
Average On-state Current (A)
Fig. 6 – On-State Power Loss Characteristics
Document Number: 94398
Fig. 3 – Current Ratings Characteristics
Revision: 27-Sep-17
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VS-ST230C Series
Vishay Semiconductors
5500
5000
4500
4000
3500
3000
2500
2000
6500
6000
5500
5000
4500
4000
3500
3000
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125°C
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated Vrrm Reapplied
ST230C..C Series
10
2500
ST230C..C Series
2000
1
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1000
100
Tj = 25°C
Tj = 125°C
ST230C..C Series
0.5
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 – On-State Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
1
0.1
Steady State Value
= 0.17 K/W
R
thJ-hs
(Single Side Cooled)
= 0.08 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
0.001
ST230C..C Series
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 10 – Thermal Impedance Z
thJ-hs
Characteristics
Revision: 27-Sep-17
Document Number: 94398
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VS-ST230C Series
Vishay Semiconductors
100
(1) PGM = 10W,
tp = 4ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W,
tp = 2ms
(3) PGM = 40W,
tp = 1ms
(4) PGM = 60W,
tp = 0.66ms
(a)
10
1
(b)
(1)
(3)
(4)
(2)
VGD
IGD
Frequency Limited by PG(AV)
Device: ST230C..C Series
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
23
0
C
20
C
1
–
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
–
–
–
–
Vishay Semiconductors product
Thyristor
Essential part number
0 = converter grade
–
–
–
–
C = ceramic PUK
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
C = PUK case A-PUK (TO-200AB)
7
8
0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
9
–
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94398
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Outline Dimensions
Vishay Semiconductors
A-PUK (TO-200AB)
DIMENSIONS
in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
C
G
13.7/14.4
(0.54/0.57)
A
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
Note:
A = Anode
C = Cathode
G
=
G
ate
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95074
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
Document Number: 91000
1
