Vishay-Intertech-VS-ST230S04P1VPBF
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VS-ST230S…VPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 230 A
FEATURES
• Center amplifying gate
• International standard case TO-93 (TO-209AB)
• Glass-metal seal up to 1200 V
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Designed and qualified for industrial level
TO-93 (TO-209AB)
• Material
categorization: for definitions of compliance
TYPICAL APPLICATIONS
• DC motor controls
PRIMARY CHARACTERISTICS
I
T(AV)
230 A
• Controlled DC power supplies
• AC controllers
V
DRM
/V
RRM
400 V, 800 V, 1200 V
1.55 V
V
TM
I
GT
T
J
150 mA
-40 °C to +125 °C
TO-93 (TO-209AB)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
230
UNITS
A
°C
A
I
T(AV)
T
C
85
I
T(RMS)
360
50 Hz
60 Hz
50 Hz
60 Hz
5700
I
TSM
A
5970
163
I
2
t
kA
2
s
149
V
DRM
/V
RRM
400 to 1200
100
V
t
q
Typical
μs
°C
T
J
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
04
08
12
400
800
500
900
VS-ST230S
30
1200
1300
Revision: 23-Apr-2020
Document Number: 96113
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VS-ST230S…VPbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave
DC at 78 °C case temperature
VALUES
230
UNITS
A
Maximum average on-state current
at case temperature
85
°C
Maximum RMS on-state current
I
T(RMS)
360
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5700
5970
4800
5000
163
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
148
Maximum I
2
t for fusing
I
2
t
kA
2
s
115
100 % V
RRM
reapplied
105
Maximum I
2
√
t for fusing
I
2
√
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
1630
0.92
0.98
0.88
0.81
1.55
600
kA
2
√
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
V
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
m
Ω
V
r
t2
V
TM
I
H
I
pk
= 720 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
Maximum holding current
T
J
= 25 °C, anode supply 12 V resistive load
mA
Maximum (typical) latching current
I
L
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20
Ω
, t
r
≤
1 μs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
Typical delay time
t
d
t
q
1.0
μs
I
TM
= 300 A, T
J
= T
J
maximum, dI
F
/dt = 20 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
Ω
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
V/μs
Maximum peak reverse and
off-state leakage current
I
RRM
,
30
mA
I
DRM
Revision: 23-Apr-2020
Document Number: 96113
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VS-ST230S…VPbF Series
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
T
J
= T
J
maximum, t
p
≤
5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤
5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+V
GM
-V
GM
T
J
= T
J
maximum, t
p
≤
5 ms
V
5.0
T
J
= – 40 °C
T
J
= 25 °C
180
90
–
150
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
V
Maximum required gate trigger/
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
40
current/voltage are the lowest
value which will trigger all units 12
V anode to cathode applied
2.9
1.8
1.2
–
V
GT
3.0
–
Maximum gate current/voltage not
to trigger is the maximum value
T
J
= T
J
maximum which
will not trigger any unit with
rated V
DRM
anode to cathode
applied
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10
mA
V
V
GD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.10
UNITS
Maximum operating junction
temperature range
T
J
°C
Maximum storage temperature range
T
Stg
Maximum thermal resistance,
junction to case
R
thJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink
R
thC-hs
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.04
31
(275)
N · m
(lbf
⋅
in)
Mounting torque,
10 %
24.5
(210)
Lubricated threads
Approximate weight
Case style
280
g
See dimensions – link at the end of datasheet
TO-93 (TO-209AB)
Δ
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 23-Apr-2020
Document Number: 96113
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,
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VS-ST230S…VPbF Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
R
thJC
(DC) = 0.1 K/W
R
thJC
(DC) = 0.1 K/W
Ø
Ø
Conduction period
Conduction angle
30°
60°
80
90°
90°
120°
60°
120°
DC
30°
100
180°
180°
70
80
0
100
200
300
400
0
50
150
200 250
Average On-
S
tate Current (A)
Average On-
S
tate Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
350
R
th
180°
120°
90°
60°
S
0
0
A
.
.
1
=
1
300
6
K
0.8 K/W – Delta R
K
/
W
/
W
0
.
2
250
30°
K
K
/
W
0
.
3
/
W
RM
S
Limit
200
150
100
50
0
.
4
K
/
W
0
.
Ø
5
K
/
W
Conduction angle
0
.
8
K
/
W
1.2 K/W
T
J
= 125 °C
0
0
50
100
150
200
250
50
75
100
125
Maximum Allowa
b
le Am
b
ient Temperature (°C)
Average On-
S
tate Current (A)
Fig. 3 – On-State Power Loss Characteristics
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
R
th
S
A
0
=
.
1
0
K
.
08 K/W
/
W
0
.
1
6
K
– Delta R
/
W
0
.
2
K
K
K
/
/
/
W
0
.
3
W
W
RM
S
Limit
Ø
0
.
4
Conduction period
0
.
5
K
/
W
0
.
8
K
/
W
T
J
= 125 °C
1
.2
K
/W
0
0
50 100
150 200 250 300 350 400
50
75
100
125
Average On-
S
tate Current (A)
Fig. 4 – On-State Power Loss Characteristics
Maximum Allowa
b
le Am
b
ient Temperature (°C)
Revision: 23-Apr-2020
Document Number: 96113
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,
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VS-ST230S…VPbF Series
Vishay Semiconductors
5500
5000
4500
4000
3500
3000
2500
2000
At any rated load condition and with
6000
5500
5000
4500
4000
3500
3000
2500
2000
Maximum non repetitive
s
urge current v
s
.
pul
s
e drain duration.
Control of conduction may not be maintained.
rated V
RRM
applied following
s
urge.
Initial T
J
= 125 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
1
10
100
0.01
0.1
1
Num
b
er Of Equal Amplitu
d
e
Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
10 000
1000
100
T
J
= 25 °C
T
J
= 125 °C
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-
S
tate Voltage (V)
Fig. 7 – On-State Voltage Drop Characteristics
1
0.1
S
teady
s
tate value
thJC
= 0.1 K/W
(DC operation)
R
0.01
0.001
0.001
0.01
0.1
1
10
S
quare Wave Pulse Duration (s)
Fig. 8 – Thermal Impedance Z
thJC
Characteristics
Revision: 23-Apr-2020
Document Number: 96113
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VS-ST230S…VPbF Series
Vishay Semiconductors
100
(1) P
G
M = 10 W,
t
p
= 4 m
s
(2) P
G
M = 20 W,
t
p
= 2 m
s
(3) P
G
M = 40 W,
t
p
= 1 m
s
(4) P
G
M = 60 W,
t
p
= 0.66 m
s
Rectangular gate pul
s
e
a) Recommended load line for
rated dI
F
/dt : 20 V, 10
Ω
; t
r
<=1 μ
s
b) Recommended load line for
< = 30 % rated dI
F
/dt : 10 V, 10
Ω
t
r
< = 1 μ
s
(a)
10
1
(b)
(3)
(4)
(1)
(2)
V
G
D
I
G
D
Fre
q
uency Limited by P
G
(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous
G
ate Current (A)
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
23
0
S
12
P
0
V
PbF
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
–
Vishay Semiconductors product
–
–
Thyristor
Essential part number
–
–
–
–
–
0 = converter grade
S = compression bonding stud
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
P = stud base 3/4″-16UNF2A threads
0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
V = glass-metal seal (only up to 1200 V)
9
–
10
–
–
None = standard production
PbF = lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 23-Apr-2020
Document Number: 96113
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Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS
in millimeters (inches)
Glass metal seal
13 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.ꢀꢀ) DIA.
4.ꢀ (0.17) DIA.
Flexible leads
C.S. 25 mm
2
(0.0ꢀ3 s.i.)
Red silicon rubber
Red cathode
C.S. 0.4 mm
2
(0.0006 s.i.)
White gate
Fast-on terminals
AMP. 280000-1
REF-250
Red shrink
White shrink
28.5 (1.12) MAX. DIA.
27.5 (1.08) MAX.
SW ꢀ2
ꢀ/4″-16UNF-2A
(1)
ꢀ5 (1.ꢀ8) MAX.
Ceramic housing
13 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.ꢀꢀ) DIA.
4.ꢀ (0.17) DIA.
Flexible leads
C.S. 25 mm
2
(0.0ꢀ3 s.i.)
Red silicon rubber
Red cathode
C.S. 0.4 mm
2
(0.006 s.i.)
White gate
Red shrink
White shrink
27.5 (1.08) MAX. DIA.
27.5 (1.08) MAX.
SW ꢀ2
ꢀ/4″-16UNF-2A
(1)
ꢀ5 (1.ꢀ8) MAX.
Note
(1)
For metric device: M16 x 1.5 – length 21 (0.83) maximum
Revision: 05-Mar-12
Document Number: 95082
1
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Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
Document Number: 91000
1
