Vishay-Intertech-VS-ST280C06C1
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VS-ST280C Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 500 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB))
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
TYPICAL APPLICATIONS
• DC motor controls
A-PUK (TO-200AB)
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
I
T(AV)
500 A
V
DRM
/V
RRM
400 V, 600 V
1.36 V
V
TM
I
GT
90 mA
T
J
-40 °C to +125 °C
A-PUK (TO-200AB)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
500
UNITS
A
°C
A
I
T(AV)
T
hs
55
960
I
T(RMS)
I
TSM
I
2
t
T
hs
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
7850
8220
308
A
kA
2
s
281
V
DRM
/V
RRM
400 to 600
100
V
t
q
Typical
μs
°C
T
J
– 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
NON-REPETITIVE PEAK VOLTAGE
V
V
04
06
400
600
500
700
ST280C..C
30
Revision: 27-Sep-17
Document Number: 94400
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VS-ST280C Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES
500 (185)
55 (85)
960
UNITS
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side(single side) cooled
°C
Maximum RMS on-state current
I
T(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
7850
8220
6600
6900
308
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms
No voltage
reapplied
t = 8.3 ms
281
Maximum I
2
t for fusing
I
2
t
kA
2
s
t = 10 ms
218
100 % V
RRM
reapplied
t = 8.3 ms
200
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
3080
0.84
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
V
0.88
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
0.50
m
V
r
t2
0.47
V
TM
I
H
I
pk
= 1050 A, T
J
= 125 °C, t
p
= 10 ms sine pulse
1.36
Maximum holding current
600
T
J
= 25 °C, anode supply 12 V resistive load
mA
Maximum (typical) latching current
I
L
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
V/μs
of off-state voltage
Maximum peak reverse and
off-state leakage current
I
RRM
,
30
mA
I
DRM
Revision: 27-Sep-17
Document Number: 94400
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VS-ST280C Series
Vishay Semiconductors
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
TYP.
MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
10.0
2.0
3.0
20
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
T
J
= T
J
maximum, t
p
5 ms
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
V
5.0
T
J
= – 40 °C
T
J
= 25 °C
180
90
–
150
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
V
Maximum required gate trigger/
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
40
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.9
1.8
1.2
–
V
GT
3.0
–
Maximum gate current/voltage
not to trigger is the maximum
T
J
= T
J
maximum value
which will not trigger any
unit with rated V
DRM
anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10
mA
V
V
GD
0.30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
T
J
– 40 to 125
°C
Maximum storage temperature range
T
Stg
– 40 to 150
0.17
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
R
thJ-hs
0.08
K/W
0.033
Maximum thermal resistance,
case to heatsink
R
thC-hs
0.017
4900
(500)
N
(kg)
Mounting force,
10 %
Approximate weight
Case style
50
g
See dimensions – link at the end of datasheet
A-PUK (TO-200AB)
R
thJC
CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.016
DOUBLE SIDE
0.016
SINGLE SIDE
0.011
DOUBLE SIDE
0.011
180°
120°
90°
0.019
0.019
0.019
0.019
0.024
0.024
0.026
0.026
T
J
= T
J
maximum
K/W
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94400
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VS-ST280C Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST280C..C Series
ST280C..C Series
(Single Side Cooled)
(DC) = 0.17 K/W
(Double Side Cooled)
R
(DC) = 0.08 K/W
R
thJ-hs
thJ-hs
Conduction Period
80
Conduction Angle
70
60
50
40
80
30°
30°
60°
60°
70
90°
90°
60
120°
120°
180°
180°
50
30
DC
20
40
0
200
400
600
800 1000
0
50 100
150 200 250 300 350
Averag
e
O
n-stat
e
C
urren
t
(
A)
AverageOn-stateCurrent(A)
Fig. 4 – Current Ratings Characteristics
Fig. 1 – Current Ratings Characteristics
130
1000
ST280C..C Series
180°
120°
90°
120
110
100
90
80
70
60
50
40
30
900
800
700
600
500
400
300
200
100
0
(Single Side Cooled)
R
(DC) = 0.17 K/W
thJ-hs
60°
RMS Limit
30°
Conduction Period
Conduction Angle
ST280C..C Series
30°
60°
90°
120°
T
= 125°C
J
180°
DC
20
0
100 200 300 400 500 600
Averag
e
O
n-stat
e
C
urren
t
(
A)
0
100 200 300 400 500 600 700
AverageOn-stateCurrent(A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – On-State Power Loss Characteristics
130
1300
DC
ST280C..C Series
1200
180°
1100
120°
120
110
100
90
80
70
60
50
40
30
(Double Side Cooled)
R
(DC) = 0.08 K/W
thJ-hs
1000
90°
900
60°
800
700
600
500
400
300
200
100
0
30°
Conduction Angle
RMS Limit
30°
Conduction Period
ST280C..C Series
60°
90°
120°
180°
T
= 125°C
J
20
0
100 200 300 400 500 600 700
AverageOn-stateCurrent(A)
0
200
400
600
800 1000
AverageOn-stateCurrent(A)
Fig. 6 – On-State Power Loss Characteristics
Fig. 3 – Current Ratings Characteristics
Revision: 27-Sep-17
Document Number: 94400
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,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280C Series
Vishay Semiconductors
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
7000
6500
6000
5500
5000
4500
4000
Maximum Non Repetitive Surge Current
At Any Rated Load Condition And With
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T
= 125°C
J
Initial T
= 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
3500 ST280C..C
Series
3000
ST280C..C Series
0.01
0.1
Puls
e
T
rai
n
D
uratio
n
(
s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1000
100
T =
25°C
J
T =
125°C
J
ST280C..C Series
0.5
1
1.5
Instantaneou
s
O
n-stat
e
V
oltag
e
(
V)
Fig. 9 – On-State Voltage Drop Characteristics
2
2.5
3
3.5
4
1
0.1
Steady State Value
= 0.17 K/W
R
thJ-hs
(Single Side Cooled)
= 0.08 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
ST280C..C Series
1
0.001
0.001
0.01
0.1
10
Squar
e
W
av
e
P
uls
e
D
uratio
n
(
s)
Fig. 10 – Thermal Impedance Z
thJ-hs
Characteristics
Revision: 27-Sep-17
Document Number: 94400
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VS-ST280C Series
Vishay Semiconductors
100
(1) PGM = 10W,
tp = 4ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W,
tp = 2ms
(3) PGM = 40W,
tp = 1ms
(4) PGM = 60W,
tp = 0.66ms
(a)
10
1
(b)
(1)
(2) (3)
(4)
VGD
IGD
Device: ST280C..C Series
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneou
s
G
at
e
C
urren
t
(
A)
Fig. 11 – Gate Charactersitics
ORDERING INFORMATION TABLE
Device code
V
S
–
S
T
28
0
C
06
C
1
–
1
2
3
4
5
6
7
8
9
–
–
–
–
–
–
–
–
Vi
s
hay
S
emiconductor
s
product
Thyri
s
tor
1
2
3
4
5
6
7
8
E
ss
ential part number
0 = converter grade
C = ceramic PUK
Voltage code: code x 100 = V
RRM
(
s
ee Voltage Rating
s
table)
C = PUK ca
s
e A-PUK (TO-200AB)
0 = eyelet terminal
s
(gate and auxiliary cathode un
s
oldered lead
s
)
1 = fa
s
t-on terminal
s
(gate and auxiliary cathode un
s
oldered lead
s
)
2 = eyelet terminal
s
(gate and auxiliary cathode
s
oldered lead
s
)
3 = fa
s
t-on terminal
s
(gate and auxiliary cathode
s
oldered lead
s
)
Critical dV/dt:
None = 500 V/μ
s
(
s
tandard
s
election)
L = 1000 V/μ
s
(
s
pecial
s
election)
–
9
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94400
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Outline Dimensions
Vishay Semiconductors
A-PUK (TO-200AB)
DIMENSIONS
in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
C
G
13.7/14.4
(0.54/0.57)
A
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
Note:
A = Anode
C = Cathode
G
=
G
ate
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95074
1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
Document Number: 91000
1
