Vishay-Intertech-VS-ST280S04P0V
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VS-ST280S Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-93 (TO-209AB)
• Hermetic
metal case with glass-metal seal
insulator
• Compression
bonded encapsulation for heavy duty
operations such as severe thermal cycling
TO-93 (TO-209AB)
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• DC motor controls
I
T(AV)
DRM
/V
RRM
V
TM
280 A
400 V, 600 V
1.28 V
V
• Controlled DC power supplies
• AC controllers
I
GT
150 mA
T
J
-40 °C to +125 °C
TO-93 (TO-209AB)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
280
UNITS
A
I
T(AV)
T
C
85
°C
I
T(RMS)
440
50 Hz
60 Hz
50 Hz
60 Hz
7850
A
I
TSM
8220
308
I
2
t
kA
2
s
281
V
DRM
/V
RRM
400/600
100
V
t
q
Typical
μs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
VOLTAGE
CODE
I
DRM
/I
RRM
MAXIMUM AT
TYPE NUMBER
T
J
= T
J
MAXIMUM mA
04
06
400
600
500
700
VS-ST280S
30
Revision: 27-Sep-17
Document Number: 94402
1
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,
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VS-ST280S Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES
280
UNITS
A
180° conduction, half sine wave
Maximum average on-state current
at case temperature
85
°C
Maximum RMS on-state current
I
T(RMS)
DC at 75 °C case temperature
440
t = 10 ms
7850
8220
6600
6900
310
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
220
Maximum I
2
t for fusing
I
2
t
kA
2
s
218
100 % V
RRM
reapplied
200
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
3100
0.84
0.88
0.50
0.47
1.28
600
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
V
r
t2
V
TM
I
H
I
pk
= 880 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
Maximum holding current
T
J
= 25 °C, anode supply 12 V resistive load
mA
Maximum (typical) latching current
I
L
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
UNIT
S
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
500
Maximum critical rate of rise
of off-state voltage
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
V/μs
mA
Maximum peak reverse and
off-state leakage current
I
RRM,
I
DRM
30
Revision: 27-Sep-17
Document Number: 94402
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
TRIGGERING
VALUES
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
S
TYP. MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
10.0
W
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
2.0
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
T
J
= T
J
maximum, t
p
5 ms
3.0
20
A
V
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
5.0
T
J
= – 40 °C
T
J
= 25 °C
180
90
–
150
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
V
Maximum required gate trigger/current/
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
40
voltage are the lowest value which will
trigger all units 12 V anode to cathode
applied
2.9
1.8
1.2
–
V
GT
3.0
–
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10
mA
V
Maximum gate current/voltage not to
trigger is the maximum value which will
not trigger any unit with rated V
DRM
anode to cathode applied
T
J
= T
J
maximum
V
GD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.105
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
T
J
°C
T
Stg
R
thJC
R
thCS
DC operation
K/W
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.04
31 (275)
24.5 (210)
280
N · m
(lbf · in)
Mounting torque,
10 %
Lubricated threads
Approximate weight
Case style
g
See dimensions – link at the end of datasheet
TO-93 (TO-209AB)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94402
3
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,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST2
8
0S
S
e
r
i e s
thJC
ST2
8
0S
S
e
r
i e s
R
(DC) = 0.105 K
/
W
R
(DC) = 0.105
K
/
W
thJC
Conduct
i
o
n
P
e
riod
Conduction Angle
30°
60°
80
30°
60°
90°
90°
120°
DC
120°
180°
180°
70
80
0
50 100
150 200 250 300 350 400 450
Average On-
s
t
ate Cu
r
rent (A)
0
50
100 150 200 250 300
Average On-
s
t
ate Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
350
R
180°
0
t
h
.
1
S
120°
6
A
300
K
=
/
0
W
0
90°
60°
.
.
2
1
K
K
/
W
/
W
250
30°
–
D
e
0
l
t
a
.
3
K
R
/
W
W
200
0
.
RM S L
i
m it
4
K
/
150
100
50
Conduct
i
o
n Ang
l
e
ST
2
80S
S
e
r
ies
1
.
2
K
/
W
T =
125°C
J
0
0
50
100 150 200 250
3
0
0
50
75
100
125
Average On-
s
t
ate Cu
r
rent (A)
M
a
x
i
m
um Allowable Ambient
T
e
mpe
r
a
ture (°C)
Fig. 3 – On-State Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
R
DC
180°
120°
90°
=
0
.
0
3
0
.
1
K
2
/
W
K
/
60°
W
–
D
30°
e
l
t
a
R
R
M
S
L
im it
Conduct
i
o
n
P
e
r
iod
ST
2
80
S
S
e
r
ies
0
.
6
K
/
W
T =
125 ° C
J
0
0
50 100
150 200 250 300 350 400 4
Average On-
s
t
ate Current (A)
Fig. 4 – On-State Power Loss Characteristics
5
0
50
75
100
125
Ma
x
i
m
um Allowable Ambient
T
e
mpe
r
a
tu
r
e (°C)
Revision: 27-Sep-17
Document Number: 94402
4
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
7000
6500
6000
5500
5000
4500
4000
3500
3000
7000
6500
6000
5500
5000
4500
4000
3500
3000
At Any
R
a
ted
L
o
ad Condition And With
At Any
R
a
ted
L
o
ad Cond
i
t
ion And With
R
a
ted V
Applied
F
o
llowing
S
u
r
g
e.
R
a
ted V
App
l
ied
F
o
l
lowing
S
u
rge.
RRM
RRM
I
n
itial T = 125°C
I
n
itial T = 125°C
J
J
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
@
6
0 Hz 0.0083 s
@
5
0 Hz 0.0100 s
ST
2
80 S
S
e
r
ie s
ST
2
8 0S
S
e r
i
e s
1
10
100
1
10
100
Number Of
E
q
u
a
l
A
mp
l
itude
H
a
l
f
C
y
c
l
e Current Pul
s
e
s
(
N)
N
u
mber Of
E
q
u
a
l
A
mplitude
H
a
l
f Cy
c
l
e Current Pul
s
e
s(
N
)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
10000
1000
100
T = 25
° C
J
T = 125°C
J
ST
2
80S
S
e
ries
0.5
1
1.5
I
n
s
t a n t a
n
e o us On-
s
t
a t e
Vo lta g e
(V)
Fig. 7 – On-State Voltage Drop Characteristics
2
2.5
3
3.5
4
1
0.1
S
t
eady
S
t
ate Va
l
ue
= 0.105
K
/
W
R
thJC
(DC Operation)
0.01
0.001
ST
2
80 S
S
e
r
ie s
0.001
0.01
0.1
Sq u a r e
W a v e
P
u lse
D u r a t io n
( s)
1
10
Fig. 8 – Thermal Impedance Z
thJC
Characteristics
Revision: 27-Sep-17
Document Number: 94402
5
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,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
100
(1) PGM = 10W,
t
p =
4
ms
R
e
c
tangu
l
a
r gate pu
l
s
e
(2) PGM = 20W,
t
p =
2
ms
(3) PGM = 40W,
t
p =
1
ms
(4) PGM = 60W,
t
p =
0
.66
m
s
a)
R
e
commended
l
o
ad
l
ine for
r
a
ted d
i
/
dt :
2
0V, 10ohm
s
;
t
r
<=1 µs
b)
R
e
commended load
l
ine for
<=30
%
r
a
ted di/dt :
1
0V, 10o
h
ms
t
r
<=1 µs
(a)
10
1
(b)
(1) (2) (3)
(4)
VGD
I
G
D
D e v i c e :
S
T
2
80S
S
e r
i
e s
0.1
F
r
e q ue n c y
L
i
m it e d
b y
PG ( A V)
0.1
0.001
0.01
1
10
100
In
s
t
antaneousGate Current (A)
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
28
0
S
06
P
0
V
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
–
–
Vishay Semiconductors product
Thyristor
–
–
Essential part number
0 = converter grade
–
–
–
–
S = compression bonding stud
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
P = stud base 3/4″-16UNF-2A threads
0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
V = glass-metal seal
9
–
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94402
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,
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,
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Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS
in millimeters (inches)
Gla
ss
metal
s
eal
19 (0.75) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
Red
s
ilicon rubber
C.
S
. 0.51 mm
2
(0.0008
s
.i.)
Red cathode
213.5 10
(8.41 0.39)
238.5 10
(9.39 0.39)
White gate
Red
s
hrink
75 (2.95)
MIN.
White
s
hrink
Ø 28.5 (1.12)
28.5 (1.12)
MAX.
MAX.
16 (0.63) MAX.
21 (0.83)
MAX.
S
W 32
3/4″-16UNF-2A
35 (1.38)
MAX.
0° to 15°
Fa
s
t-on terminal
s
AMP. 280000-1
REF-250
4 MAX.
38 MAX.
23 MIN.
Flexible lead
C.
S
. 35 mm
2
(0.054
s
.i.)
Document Number: 95077
Revision: 19-May-10
1
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Revision: 01-Jan-2023
Document Number: 91000
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