Vishay-Intertech-VS-ST280S04P1V
| Part # | Vishay-Intertech-VS-ST280S04P1V |
Download  | Vishay-Intertech-VS-ST280S04P1V |
VS-ST280S Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-93 (TO-209AB)
• Hermetic
metal case with glass-metal seal
insulator
• Compression
bonded encapsulation for heavy duty
operations such as severe thermal cycling
TO-93 (TO-209AB)
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• DC motor controls
I
T(AV)
DRM
/V
RRM
V
TM
280 A
400 V, 600 V
1.28 V
V
• Controlled DC power supplies
• AC controllers
I
GT
150 mA
T
J
-40 °C to +125 °C
TO-93 (TO-209AB)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
280
UNITS
A
I
T(AV)
T
C
85
°C
I
T(RMS)
440
50 Hz
60 Hz
50 Hz
60 Hz
7850
A
I
TSM
8220
308
I
2
t
kA
2
s
281
V
DRM
/V
RRM
400/600
100
V
t
q
Typical
μs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
VOLTAGE
CODE
I
DRM
/I
RRM
MAXIMUM AT
TYPE NUMBER
T
J
= T
J
MAXIMUM mA
04
06
400
600
500
700
VS-ST280S
30
Revision: 27-Sep-17
Document Number: 94402
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES
280
UNITS
A
180° conduction, half sine wave
Maximum average on-state current
at case temperature
85
°C
Maximum RMS on-state current
I
T(RMS)
DC at 75 °C case temperature
440
t = 10 ms
7850
8220
6600
6900
310
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
220
Maximum I
2
t for fusing
I
2
t
kA
2
s
218
100 % V
RRM
reapplied
200
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
3100
0.84
0.88
0.50
0.47
1.28
600
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
V
r
t2
V
TM
I
H
I
pk
= 880 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
Maximum holding current
T
J
= 25 °C, anode supply 12 V resistive load
mA
Maximum (typical) latching current
I
L
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
UNIT
S
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
500
Maximum critical rate of rise
of off-state voltage
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
V/μs
mA
Maximum peak reverse and
off-state leakage current
I
RRM,
I
DRM
30
Revision: 27-Sep-17
Document Number: 94402
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
TRIGGERING
VALUES
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
S
TYP. MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
10.0
W
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
2.0
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
T
J
= T
J
maximum, t
p
5 ms
3.0
20
A
V
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
5.0
T
J
= – 40 °C
T
J
= 25 °C
180
90
–
150
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
V
Maximum required gate trigger/current/
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
40
voltage are the lowest value which will
trigger all units 12 V anode to cathode
applied
2.9
1.8
1.2
–
V
GT
3.0
–
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10
mA
V
Maximum gate current/voltage not to
trigger is the maximum value which will
not trigger any unit with rated V
DRM
anode to cathode applied
T
J
= T
J
maximum
V
GD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.105
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
T
J
°C
T
Stg
R
thJC
R
thCS
DC operation
K/W
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.04
31 (275)
24.5 (210)
280
N · m
(lbf · in)
Mounting torque,
10 %
Lubricated threads
Approximate weight
Case style
g
See dimensions – link at the end of datasheet
TO-93 (TO-209AB)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94402
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST2
8
0S
S
e
r
i e s
thJC
ST2
8
0S
S
e
r
i e s
R
(DC) = 0.105 K
/
W
R
(DC) = 0.105
K
/
W
thJC
Conduct
i
o
n
P
e
riod
Conduction Angle
30°
60°
80
30°
60°
90°
90°
120°
DC
120°
180°
180°
70
80
0
50 100
150 200 250 300 350 400 450
Average On-
s
t
ate Cu
r
rent (A)
0
50
100 150 200 250 300
Average On-
s
t
ate Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
350
R
180°
0
t
h
.
1
S
120°
6
A
300
K
=
/
0
W
0
90°
60°
.
.
2
1
K
K
/
W
/
W
250
30°
–
D
e
0
l
t
a
.
3
K
R
/
W
W
200
0
.
RM S L
i
m it
4
K
/
150
100
50
Conduct
i
o
n Ang
l
e
ST
2
80S
S
e
r
ies
1
.
2
K
/
W
T =
125°C
J
0
0
50
100 150 200 250
3
0
0
50
75
100
125
Average On-
s
t
ate Cu
r
rent (A)
M
a
x
i
m
um Allowable Ambient
T
e
mpe
r
a
ture (°C)
Fig. 3 – On-State Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
R
DC
180°
120°
90°
=
0
.
0
3
0
.
1
K
2
/
W
K
/
60°
W
–
D
30°
e
l
t
a
R
R
M
S
L
im it
Conduct
i
o
n
P
e
r
iod
ST
2
80
S
S
e
r
ies
0
.
6
K
/
W
T =
125 ° C
J
0
0
50 100
150 200 250 300 350 400 4
Average On-
s
t
ate Current (A)
Fig. 4 – On-State Power Loss Characteristics
5
0
50
75
100
125
Ma
x
i
m
um Allowable Ambient
T
e
mpe
r
a
tu
r
e (°C)
Revision: 27-Sep-17
Document Number: 94402
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
7000
6500
6000
5500
5000
4500
4000
3500
3000
7000
6500
6000
5500
5000
4500
4000
3500
3000
At Any
R
a
ted
L
o
ad Condition And With
At Any
R
a
ted
L
o
ad Cond
i
t
ion And With
R
a
ted V
Applied
F
o
llowing
S
u
r
g
e.
R
a
ted V
App
l
ied
F
o
l
lowing
S
u
rge.
RRM
RRM
I
n
itial T = 125°C
I
n
itial T = 125°C
J
J
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
@
6
0 Hz 0.0083 s
@
5
0 Hz 0.0100 s
ST
2
80 S
S
e
r
ie s
ST
2
8 0S
S
e r
i
e s
1
10
100
1
10
100
Number Of
E
q
u
a
l
A
mp
l
itude
H
a
l
f
C
y
c
l
e Current Pul
s
e
s
(
N)
N
u
mber Of
E
q
u
a
l
A
mplitude
H
a
l
f Cy
c
l
e Current Pul
s
e
s(
N
)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
10000
1000
100
T = 25
° C
J
T = 125°C
J
ST
2
80S
S
e
ries
0.5
1
1.5
I
n
s
t a n t a
n
e o us On-
s
t
a t e
Vo lta g e
(V)
Fig. 7 – On-State Voltage Drop Characteristics
2
2.5
3
3.5
4
1
0.1
S
t
eady
S
t
ate Va
l
ue
= 0.105
K
/
W
R
thJC
(DC Operation)
0.01
0.001
ST
2
80 S
S
e
r
ie s
0.001
0.01
0.1
Sq u a r e
W a v e
P
u lse
D u r a t io n
( s)
1
10
Fig. 8 – Thermal Impedance Z
thJC
Characteristics
Revision: 27-Sep-17
Document Number: 94402
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST280S Series
Vishay Semiconductors
100
(1) PGM = 10W,
t
p =
4
ms
R
e
c
tangu
l
a
r gate pu
l
s
e
(2) PGM = 20W,
t
p =
2
ms
(3) PGM = 40W,
t
p =
1
ms
(4) PGM = 60W,
t
p =
0
.66
m
s
a)
R
e
commended
l
o
ad
l
ine for
r
a
ted d
i
/
dt :
2
0V, 10ohm
s
;
t
r
<=1 µs
b)
R
e
commended load
l
ine for
<=30
%
r
a
ted di/dt :
1
0V, 10o
h
ms
t
r
<=1 µs
(a)
10
1
(b)
(1) (2) (3)
(4)
VGD
I
G
D
D e v i c e :
S
T
2
80S
S
e r
i
e s
0.1
F
r
e q ue n c y
L
i
m it e d
b y
PG ( A V)
0.1
0.001
0.01
1
10
100
In
s
t
antaneousGate Current (A)
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
28
0
S
06
P
0
V
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
–
–
Vishay Semiconductors product
Thyristor
–
–
Essential part number
0 = converter grade
–
–
–
–
S = compression bonding stud
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
P = stud base 3/4″-16UNF-2A threads
0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
V = glass-metal seal
9
–
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94402
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS
in millimeters (inches)
Gla
ss
metal
s
eal
19 (0.75) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
Red
s
ilicon rubber
C.
S
. 0.51 mm
2
(0.0008
s
.i.)
Red cathode
213.5 10
(8.41 0.39)
238.5 10
(9.39 0.39)
White gate
Red
s
hrink
75 (2.95)
MIN.
White
s
hrink
Ø 28.5 (1.12)
28.5 (1.12)
MAX.
MAX.
16 (0.63) MAX.
21 (0.83)
MAX.
S
W 32
3/4″-16UNF-2A
35 (1.38)
MAX.
0° to 15°
Fa
s
t-on terminal
s
AMP. 280000-1
REF-250
4 MAX.
38 MAX.
23 MIN.
Flexible lead
C.
S
. 35 mm
2
(0.054
s
.i.)
Document Number: 95077
Revision: 19-May-10
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
