Vishay-Intertech-VS-ST300C04C1
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VS-ST300C Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case E-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
TYPICAL APPLICATIONS
• DC motor controls
E-PUK (TO-200AB)
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
I
T(AV)
650 A
400 V, 800 V, 1200 V, 1600 V,
1800 V, 2000 V
V
DRM
/V
RRM
V
TM
I
GT
T
J
2.18 V
100 mA
-40 °C to +125 °C
E-PUK (TO-200AB)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
650
UNITS
A
°C
A
I
T(AV)
T
hs
55
1290
I
T(RMS)
I
TSM
I
2
t
T
hs
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
8000
A
8380
320
kA
2
s
292
V
DRM
/V
RRM
400 to 2000
100
V
t
q
Typical
µs
°C
T
J
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
V
04
08
12
16
18
20
400
500
900
800
1200
1600
1800
2000
1300
1700
1900
2100
VS-ST300C..C
50
Revision: 27-Sep-17
Document Number: 94403
1
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VS-ST300C Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES UNITS
650 (320)
55 (75)
1290
8000
8380
6730
7040
320
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
°C
Maximum RMS on-state current
I
T(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
292
Maximum I
2
t for fusing
I
2
t
kA
2
s
226
100 % V
RRM
reapplied
207
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
3200
0.97
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
V
0.98
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
0.74
m
V
r
t2
0.73
V
TM
I
H
I
pk
= 1635 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
2.18
Maximum holding current
600
T
J
= 25 °C, anode supply 12 V resistive load
mA
Typical latching current
I
L
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum non-repetitive rate
of rise of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/µs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
µs
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
50
V/µs
mA
Maximum peak reverse and
off-state leakage current
I
RRM,
I
DRM
Revision: 27-Sep-17
Document Number: 94403
2
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,
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VS-ST300C Series
Vishay Semiconductors
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
TYP.
MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
10.0
W
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
2.0
3.0
20
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
T
J
= T
J
maximum, t
p
5 ms
A
V
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
5.0
T
J
= – 40 °C
T
J
= 25 °C
200
100
50
–
200
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
Maximum required gate trigger/
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
–
V
GT
V
3.0
–
Maximum gate current/voltage
not to trigger is the maximum
T
J
= T
J
maximum value
which will not trigger any
unit with rated V
DRM
anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10.0
0.25
mA
V
V
GD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
– 40 to 125
– 40 to 150
0.09
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
T
J
°C
T
Stg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
R
thJ-hs
0.04
K/W
0.02
Maximum thermal resistance, case to heatsink
Mounting force,
10 %
R
thC-hs
0.01
9800
(1000)
N
(kg)
Approximate weight
Case style
83
g
See dimensions – link at the end of datasheet
E-PUK (TO-200AB)
R
thJ-hs
CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
0.007
DOUBLE SIDE
0.007
180°
120°
90°
0.010
0.012
0.015
0.022
0.036
0.011
0.012
0.015
0.022
0.036
0.012
0.013
0.016
0.017
T
J
= T
J
maximum
K/W
60°
0.023
0.023
30°
0.036
0.037
Note
•
The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94403
3
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,
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VS-ST300C Series
Vishay Semiconductors
130
120
110
100
90
80
70
60
50
130
120
110
100
90
ST300C..C Series
ST300C..C Series
(Single Side Cooled)
thJ-hs
(Double Side Cooled)
R
(DC) = 0.04 K/W
R
(DC) = 0.09 K/W
thJ-hs
Conduction Period
Conduction Angle
80
30°
70
60°
30°
60
60°
90°
90°
120°
120°
50
40
30
20
180°
180°
DC
40
30
0
200 400 600 800
1000 1200 1400
Averag
e
O
n-stat
e
C
urren
t
(
A)
0
100
200
300
400
500
AverageOn-stateCurrent(A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – Current Ratings Characteristics
1600
130
180°
120°
90°
ST300C..C Series
120
110
100
90
80
70
60
50
40
30
1400
1200
1000
800
600
400
200
0
(Single Side Cooled)
R
(DC) = 0.09 K/W
thJ-hs
60°
30°
RMS Limit
Conduction Period
Conduction Angle
30°
60°
90°
120°
ST300C..C Series
T
= 125 °C
J
180°
DC
20
0
100 200 300 400 500 600 700
Averag
e
O
n-stat
e
C
urren
t
(
A)
0
200
AverageOn-stateCurrent(A)
Fig. 2 – Current Ratings Characteristics
400
600
800
Fig. 5 – On-State Power Loss Characteristics
1800
DC
130
ST300C..C Series
120
110
100
90
80
70
60
50
40
30
1600
1400
1200
1000
800
600
400
200
0
180°
120°
90°
(Double Side Cooled)
R
(DC) = 0.04 K/W
thJ-hs
RMS Limit
60°
30°
Conduction Angle
Conduction Period
ST300C..C Series
30°
60°
90°
120°
T
= 125 °C
J
20
10
180°
0
200 400 600 800
1000 1200
Averag
e
O
n-stat
e
C
urren
t
(
A)
0
200
400
600
800 1000
Averag
e
O
n-stat
e
C
urren
t
(
A)
Fig. 3 – Current Ratings Characteristics
Fig. 6 – On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94403
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,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST300C Series
Vishay Semiconductors
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
8000
7500
7000
6500
6000
5500
5000
4500
4000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125 °C
Initial T
J
= 125
°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
RRM
Reapplied
ST300C..C Series
3500
ST300C..C Series
3000
0.01
1
10
100
0.1
Puls
e
T
rai
n
D
uratio
n
(
s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T =
25°C
J
T =
125°C
J
1000
ST300C..C Series
100
0
1
2
3
4
5
6
7
8
9
Instantaneou
s
O
n-stat
e
V
oltag
e
(
V)
Fig. 9 – On-State Voltage Drop Characteristcs
0.1
0.01
Steady State Value
= 0.09 K/W
R
thJ-hs
(Single Side Cooled)
= 0.04 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST300C..C Series
1
0.001
0.001
0.01
0.1
10
Squar
e
W
av
e
P
uls
e
D
uratio
n
(
s)
Fig. 10 – Thermal Impedance Z
thJ-hs
Characteristics
Revision: 27-Sep-17
Document Number: 94403
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,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST300C Series
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 10W,
tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 μs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 μs
(2) PGM = 20W,
tp = 2ms
(3) PGM = 40W,
tp = 1ms
(4) PGM = 60W,
tp = 0.66ms
10
1
(a)
(b)
(3)
(1) (2)
(4)
VGD
IGD
Device: ST300C..C Series
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneou
s
G
at
e
C
urren
t
(
A)
Fig. 11 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
30
0
C
20
C
1
–
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
–
–
–
–
Vishay Semiconductors product
Thyristor
Essential part number
0 = converter grade
–
–
–
–
C = ceramic PUK
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
C = PUK case E-PUK (TO-200AB)
0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
9
None = 500 V/ꢀs (standard value)
L = 1000 V/ꢀs (special selection)
–
Critical dV/dt:
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94403
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Outline Dimensions
Vishay Semiconductors
E-PUK (TO-200AB)
DIMENSIONS
in millimeters (inches)
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
C
G
14.1/15.1
(0.56/0.59)
A
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
Note:
A = Anode
40.5 (1.59) DIA. MAX.
C = Cathode
G
=
G
ate
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95075
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
Document Number: 91000
1
