Vishay-Intertech-VS-ST300S18M0PBF
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VS-ST300SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• International standard case TO-118 (TO-209AE)
• Hermetic metal case with ceramic insulator
• Threaded
studs UNF 3/4″-16UNF-2A or
ISO M24 x 1.5
TO-118 (TO- 209AE)
• Compression
bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
• Material
categorization: for definitions of compliance
I
T(AV)
300 A
400 V, 800 V, 1200 V, 1600 V,
1800 V, 2000 V
V
DRM
/V
RRM
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
V
TM
1.28 V
200 mA
I
GT
T
J
-40 °C to +125 °C
TO-118 (TO-209AE)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
300
UNITS
A
I
T(AV)
T
C
75
°C
I
T(RMS)
470
50 Hz
60 Hz
50 Hz
60 Hz
8000
A
I
TSM
8380
320
I
2
t
kA
2
s
292
V
DRM
/V
RRM
400 to 2000
100
V
t
q
Typical
μs
°C
T
J
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM NON-REPETITIVE
I
DRM
/I
RRM
MAXIMUM AT
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
T
J
= T
J
MAXIMUM
mA
04
08
12
16
18
20
400
800
500
900
1200
1600
1800
2000
1300
1700
1900
2100
VS-ST300S
50
Revision: 27-Sep-17
Document Number: 94406
1
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,
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,
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VS-ST300SPbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES
300
UNITS
A
180° conduction, half sine wave
Maximum average on-state current
at case temperature
75
°C
Maximum RMS on-state current
I
T(RMS)
DC at 64 °C case temperature
470
t = 10 ms
8000
8380
6730
7040
320
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
100 % V
RRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
292
Maximum I
2
t for fusing
I
2
t
kA
2
s
226
100 % V
RRM
reapplied
207
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
3200
0.97
0.98
0.74
0.73
1.66
600
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
V
r
t2
V
TM
I
H
I
pk
= 940 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
Maximum holding current
T
J
= 25 °C, anode supply 12 V resistive load
mA
Typical latching current
I
L
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
V/μs
off-state voltage
Maximum peak reverse and
off-state leakage current
I
RRM
,
30
mA
I
DRM
Revision: 27-Sep-17
Document Number: 94406
2
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DiodesAmericas@vishay.com
,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST300SPbF Series
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
T
J
= T
J
maximum, t
p
5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
5 ms
V
5.0
T
J
= -40 °C
T
J
= 25 °C
200
100
50
–
200
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
V
Maximum required gate trigger/
T
J
= 125 °C
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
–
V
GT
3
–
Maximum gate current/voltage
not to trigger is the maximum
T
J
= T
J
maximum value
which will not trigger any
unit with rated V
DRM
anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10
mA
V
V
GD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.10
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
T
J
°C
T
Stg
R
thJC
R
thCS
DC operation
K/W
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.03
48.5
(425)
N · m
(lbf · in)
Mounting torque,
10 %
Approximate weight
Case style
535
g
See dimensions – link at the end of datasheet
TO-118 (TO-209AE)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.011
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94406
3
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,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST300SPbF Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST
3
00S
S
e r
i
e s
ST
3
00S
S
e
r
ie s
R
(DC) = 0.10
K
/
W
R
(DC) = 0.10
K
/
W
thJC
thJC
Conduction
P
e
r
i
o
d
Conduction Angle
30°
60°
90°
80
120°
30°
60°
180°
80
90°
120°
70
180°
300
Average On-
s
t
ate Cu
r
r
e
nt (A)
DC
70
60
0
50 100
150 200 250 300 350
Average On-
s
t
ate Cu
r
rent (A)
0
100
200
400
500
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
480
440
180°
120°
400
360
320
280
240
200
160
120
80
90°
60°
30°
0
.
2
K
RM S L
i
m it
/
W
0
.
3
K
/
W
0
.
4
K
/
W
Conduct
i
on Angle
ST
3
00
S
S
e
r
ies
T =
125°C
40
J
0
0
40 80
120 160 200 240 280 3
2
0
50
75
100
125
Maximum Allowable Ambient
T
e
mperature (°C)
Average On-
s
t
ate Cu
r
r
e
nt (A)
Fig. 3 – On-State Power Loss Characteristics
650
600
550
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
th
S
A
0
.
0
8
K
60°
/
W
0
30°
.
1
2
K
/
W
0
.
2
RM S L
i
m it
K
/
W
Conduction
P
e
r
i
o
d
ST
3
00S
S
e
r
ies
T =
125°C
J
0
0
100
200
300
400
5
0
0
50
75
100
125
Average On-
s
t
ate Current (A)
Ma
x
imum Allowable Ambient
T
e
mpe
r
a
tu
r
e (°C)
Fig. 4 – On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94406
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST300SPbF Series
Vishay Semiconductors
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
Maximum Non
R
e
pet
i
t
i
ve
S
u
rge Current
Ver
s
u
s
P
u
l
s
e T
r
a
i
n Dur
a
t
i
o
n. Control
Of Conduct
i
o
n May
N
o
t
B
e
M
a
i
ntained.
At Any
R
a
ted
L
o
ad Condition And With
R
a
ted V
Applied
F
o
llowing
S
u
rge.
RRM
I
n
itial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage
R
e
app
l
i
e
d
R
a
ted V
R
e
applied
RRM
ST
3
00S
S
e r
i
e s
ST
3
00
S
S
e
ries
0.01
0.1
P
u
l
s
e T
r
a
in Dura tion (
s
)
1
1
10
100
Number Of
E
q
ual Amplitude Half Cycle Current
P
u
l
s
e
s
(
N)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
10000
1000
100
T = 25°C
J
T = 125°
C
J
ST3
0
0S
S
e r
i
e s
0
1
2
3
4
5
6
7
8
9
I
n
s
t
antaneousOn-
s
t
ate Voltage (V)
Fig. 7 – On-State Voltage Drop Characteristics
1
0.1
S
t
eady
S
t
ate Va
l
ue
= 0.
10 K/ W
R
thJC
(DC Operation)
0.01
0.001
ST3
0
0S
S
e r
i
e s
0.001
0.01
0.1
Sq u a
r
e
Wa v e
Pu l
s
e D
u r a t
i
o n
(
s
)
1
10
Fig. 8 – Thermal Impedance Z
thJC
Characteristics
Revision: 27-Sep-17
Document Number: 94406
5
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST300SPbF Series
Vishay Semiconductors
100
R
e
ctangular gate pu
l
se
(1)
P
G
M = 10W,
t
p =
4
ms
a)
R
e
commended
l
o
ad
l
ine for
r
a
ted d
i
/
dt :
2
0V, 10ohm
s
;
t
r<=1 µs
b)
R
e
commended load
l
ine for
<=30
%
r
a
ted di/dt :
1
0V, 10ohms
t
r
<=1 µs
(2)
P
G
M = 20W,
t
p =
2
ms
(3)
P
G
M = 40W,
t
p =
1
ms
(4)
P
G
M = 60W,
tp = 0.66ms
10
1
(a)
(b)
(1) (2) (3)
(4)
VGD
I
G
D
F
r
e q ue nc y
L
im it e d
b y
PG ( AV)
Device:
S
T
3
00S
S
e
r
ies
0.1
0.1
0.001
0.01
1
10
100
I
n
s
t
antaneousGate Cu
r
r
e
nt (A)
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
30
0
S
20
P
0
–
PbF
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
–
–
–
–
Vishay Semiconductors product
Thyristor
Essential part number
0 = Converter grade
–
–
–
S = Compression bonding stud
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
P = stud base 3/4″ 16UNF-2A threads
M = stud base metric threads (M24 x 1.5)
8
–
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3 = Threaded top terminal 3/8″ 24UNF-2A
9
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
–
Critical dV/dt:
10
–
–
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94406
6
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-209AE (TO-118)
DIMENSIONS – TO-209AE (TO-118)
in millimeters (inches)
Ceramic housing
22 (0.87) MAX.
4.5 (0.18) MAX.
4.ꢀ (0.17) DIA.
White gate
Flexible leads
10.5 (0.41)
NOM.
Red silicon rubber
C.S. 50 mm
2
Red cathode
(0.078 s.i.)
ꢀ8 (1.50)
MAX. DIA.
White shrink
Red shrink
Fast-on terminals
AMP. 280000-1
REF-250
SW 45
ꢀ/4″16 UNF-2A
(1)
49 (1.92) MAX.
Note
(1)
For metric device: M24 x 1.5 – length screw 21 (0.83) maximum
DIMENSIONS – TO-209AE (TO-118) WITH TOP THREAD TERMINAL 3/8″
in millimeters (inches)
Ceramic housing
17 (0.67) DIA.
ꢀ/8″-24UNF-2A
ꢀ8 (1.5) DIA. MAX.
SW 45
ꢀ/4″-16UNF-2A
(1)
Note
(1)
For metric device: M24 x 1.5 – length screw 21 (0.83) maximum
Document Number: 95084
Revision: 02-Aug-07
1
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Disclaimer
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Revision: 01-Jan-2023
Document Number: 91000
1
