Vishay-Intertech-VS-ST330C08L0

VS-ST330CL Series  

Vishay Semiconductors  

Phase Control Thyristors  

(Hockey PUK Version), 650 A  

FEATURES  

• Center amplifying gate  

• Metal case with ceramic insulator  

• International standard case B-PUK (TO-200AC))  

• High profile hockey PUK  

• Designed and qualified for industrial level  

• Material

 

categorization: for definitions of compliance  

please see

TYPICAL APPLICATIONS  

• DC motor controls  

B-PUK (TO-200AC)  

• Controlled DC power supplies  

PRIMARY CHARACTERISTICS  

• AC controllers



 

















I

T(AV)  

V

TM  

650 A  

V

400 V, 800 V, 1200 V, 1400 V, 1600 V  

1.90 V  

I

GT  

100 mA  

T

J  

-40 °C to +125 °C  

B-PUK (TO-200AC)  

Single SCR  

Package  

Circuit configuration  

MAJOR RATINGS AND CHARACTERISTICS  

PARAMETER  

TEST CONDITIONS  

VALUES  

650  

UNITS  

A

°C  

A

I

T(AV)  

T

hs  

55  

1230  

I

T(RMS)  

I

TSM  

I

2

t  

T

hs  

25  

°C  

50 Hz  

60 Hz  

50 Hz  

60 Hz  

9000  

A

9420  

405  

kA

2

s  

370  

V

DRM

/V

RRM  

400 to 1600  

100  

V

t

q  

Typical  

μs  

°C  

T

J  

-40 to +125  

ELECTRICAL SPECIFICATIONS  

VOLTAGE RATINGS  

V

DRM

/V

RRM

, MAXIMUM REPETITIVE  

PEAK AND OFF-STATE VOLTAGE  

V

V

RSM

, MAXIMUM  

NON-REPETITIVE PEAK VOLTAGE  

V

I

DRM

/I

RRM

MAXIMUM  

AT T

J

= T

J

MAXIMUM  

mA  

TYPE  

NUMBER  

VOLTAGE  

CODE  

04  

08  

12  

14  

16  

400  

800  

500  

900  

VS-ST330C..L  

1200  

1400  

1600  

1300  

1500  

1700  

50  

Revision: 27-Sep-17  

Document Number: 94408  

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T

VS-ST330CL Series  

Vishay Semiconductors  

ABSOLUTE MAXIMUM RATINGS  

PARAMETER  

SYMBOL  

I

T(AV)  

TEST CONDITIONS  

VALUES  

650 (314)  

55 (75)  

1230  

9000  

9420  

7570  

7920  

405  

UNITS  

A

Maximum average on-state current



 

at heatsink temperature  

180° conduction, half sine wave

  

double side (single side) cooled  

°C  

Maximum RMS on-state current  

I

T(RMS)  

DC at 25 °C heatsink temperature double side cooled  

t = 10 ms  

No voltage  

reapplied  

t = 8.3 ms  

A

Maximum peak, one-cycle

  

non-repetitive surge current  

I

TSM  

t = 10 ms  

100 % V

RRM



 

reapplied  

t = 8.3 ms  

Sinusoidal half wave,

  

initial T

J

= T

J

maximum  

t = 10 ms  

No voltage  

reapplied  

t = 8.3 ms  

370  

Maximum I

2

t for fusing  

I

2

t  

kA

2

s  

t = 10 ms  

287  

100 % V

RRM

  

reapplied  

t = 8.3 ms  

262  

Maximum I

2



t for fusing  

I

2



t  

V

T(TO)1  

V

T(TO)2  

r

t1  

t = 0.1 to 10 ms, no voltage reapplied  

4050  

0.91  

kA

2



s  

Low level value of threshold voltage  

High level value of threshold voltage  

Low level value of on-state slope resistance  

High level value of on-state slope resistance  

Maximum on-state voltage  

(16.7 % x



x I

T(AV)

< I <



x I

T(AV)

), T

J

= T

J

maximum  

(I >



x I

T(AV)

), T

J

= T

J

maximum  

V

0.93  

(16.7 % x



x I

T(AV)

< I <



x I

T(AV)

), T

J

= T

J

maximum  

(I >



x I

T(AV)

), T

J

= T

J

maximum  

0.57  

m

  

V

r

t2  

0.57  

V

TM  

I

H  

I

pk

= 1730 A, T

J

= T

J

maximum, t

p

= 10 ms sine pulse  

1.90  

Maximum holding current  

600  

T

J

= 25 °C, anode supply 12 V resistive load  

mA  

Typical latching current  

I

L  

1000  

SWITCHING  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

UNITS  

Maximum non-repetitive rate of rise

  

of turned-on current  

Gate drive 20 V, 20



, t

r



1 μs

  

T

J

= T

J

maximum, anode voltage



80 % V

DRM  

dI/dt  

1000  

A/μs  

Gate current 1 A, dI

g

/dt = 1 A/μs

  

Typical delay time  

t

d  

t

q  

1.0  

V

d

= 0.67 % V

DRM

, T

J

= 25 °C  

μs  

I

TM

= 550 A, T

J

= T

J

maximum, dI/dt = 40 A/μs,

  

Typical turn-off time  

100  

V

R

= 50 V, dV/dt = 20 V/μs, gate 0 V 100



, t

p

= 500 μs  

BLOCKING  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

UNITS  

Maximum critical rate of rise of

  

dV/dt  

T

J

= T

J

maximum linear to 80 % rated V

DRM  

T

J

= T

J

maximum, rated V

DRM

/V

RRM

applied  

500  

V/μs  

off-state voltage  

Maximum peak reverse and

  

off-state leakage current  

I

RRM  

,

50  

mA  

I

DRM  

Revision: 27-Sep-17  

Document Number: 94408  

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VS-ST330CL Series  

Vishay Semiconductors  

TRIGGERING  

VALUES  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

UNITS  

Typ. Max.  

Maximum peak gate power  

P

GM  

P

G(AV)  

I

GM  

T

J

= T

J

maximum, t

p



5 ms  

10.0  

2.0  

3.0  

20  

W

A

Maximum average gate power  

T

J

= T

J

maximum, f = 50 Hz, d% = 50  

T

J

= T

J

maximum, t

p



5 ms  

Maximum peak positive gate current  

Maximum peak positive gate voltage  

Maximum peak negative gate voltage  

+V

GM  

-V

GM  

T

J

= T

J

maximum, t

p



5 ms  

V

5.0  

T

J

= -40 °C  

T

J

= 25 °C  

200  

–

DC gate current required to trigger  

DC gate voltage required to trigger  

I

GT  

100 200  

mA  

V

Maximum required gate trigger/

  

T

J

= 125 °C  

T

J

= -40 °C  

T

J

= 25 °C  

T

J

= 125 °C  

50  

2.5  

1.8  

1.1  

–

–

current/voltage are the lowest  

value which will trigger all units  

12 V anode to cathode applied  

V

GT  

3.0  

–

Maximum gate current/voltage  

not to trigger is the maximum  

T

J

= T

J

maximum value

 

which will not trigger any  

unit with rated V

DRM

anode to  

cathode applied  

DC gate current not to trigger  

DC gate voltage not to trigger  

I

GD  

10  

mA  

V

V

GD  

0.25  

THERMAL AND MECHANICAL SPECIFICATIONS  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

-40 to +125  

-40 to +150  

0.11  

UNITS  

Maximum operating junction temperature range  

Maximum storage temperature range  

T

J  

°C  

T

Stg  

DC operation single side cooled  

DC operation double side cooled  

DC operation single side cooled  

DC operation double side cooled  

Maximum thermal resistance, junction to heatsink  

R

thJ-hs  

0.06  

K/W  

0.011  

Maximum thermal resistance, case to heatsink  

Mounting force,

 

10 %  

R

thC-hs  

0.005  

9800  

(1000)  

N

(kg)  

Approximate weight  

Case style  

250  

g

See dimensions – link at the end of datasheet  

B-PUK (TO-200AC)  



R

thJ-hs

CONDUCTION  

SINUSOIDAL CONDUCTION  

RECTANGULAR CONDUCTION  

CONDUCTION ANGLE  

TES

T

C

ONDITIONS UNITS  

SINGLE SIDE  

0.012  

DOUBLE SIDE  

0.010  

SINGLE SIDE  

0.008  

DOUBLE SIDE  

0.008  

180°  

120°  

90°  

0.014  

0.015  

0.014  

0.014  

0.018  

0.018  

0.019  

0.019  

T

J

= T

J

maximum  

K/W  

60°  

0.026  

0.027  

0.027  

0.028  

30°  

0.045  

0.046  

0.046  

0.046  

Note  

•

The table above shows the increment of thermal resistance R

thJ-hs

when devices operate at different conduction angles than DC  

Revision: 27-Sep-17  

Document Number: 94408  

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T

VS-ST330CL Series  

Vishay Semiconductors  

130  

120  

110  

100  

90  

130  

120  

110  

100  

90  

ST

3

30C . . L

S

e r

i

e s  

ST

3

30

C

..L

S

e

ries  

(

S

i

ngle

S

i

d

e Coo

l

e

d)  

thJ-hs  

(Double

S

i

d

e Coo

l

e

d)  

R

(DC) = 0.05

K

/

W  

R

(DC) = 0.11

K

/ W  

thJ-hs  

Conduction Angle  

Conduction

P

e

riod  

80  

80  

70  

70  

30°  

30°  

60  

60°  

60°  

60  

90°  

50  

120°  

90°  

50  

180°  

120°  

40  

180°  

40  

30  

DC  

30  

20  

0

50 100

 

150 200 250 300 350 400 450  

Average On-

s

t

ate Cu

r

r

e

nt (A)  

0

200 400 600 800

 

1000 1200 1400  

Average On-

s

t

ate Cu

r

rent (A)  

Fig. 1 – Current Ratings Characteristics  

Fig. 4 – Current Ratings Characteristics  

130  

1600  

ST

3

30C..L

S

e

ries  

180°  

120°  

90°  

120  

110  

100  

90  

(

S

i

ngle

S

i

de Cooled)  

1400  

1200  

1000  

800  

600  

400  

200  

0

R

(DC) = 0.11

K

/

W  

thJ-hs  

60°  

30°  

RM S L

i

m it  

Conduction

P

e

r

iod  

80  

70  

60  

Conduction Angle  

ST

3

30C . . L

S

e

r

ie s  

50  

30°  

60°  

40  

90°  

120°  

T =

 

125°C  

J

30  

180°  

DC  

600  

20  

0

200  

400  

800  

0

100 200 300 400 500 600 700 800  

Average On-

s

t

ate Cu

r

rent (A)  

Average On-

s

t

ate Current (A)  

Fig. 2 – Current Ratings Characteristics  

Fig. 5 – On-State Power Loss Characteristics  

130  

2200  

DC  

ST

3

30C..

L

S

e

ries  

120  

110  

100  

90  

2000  

180°  

(Double

S

i

d

e Cooled)  

R

(DC) = 0.05

K

/

W  

120°  

90°  

60°  

30°  

1800  

1600  

1400  

1200  

1000  

800  

600  

400  

200  

0

thJ-hs  

Conduct

i

o

n Angle  

RM S L

i

m it  

80  

70  

Conduction

P

e

r

iod  

ST

3

30C .. L

S

e r

i

e s  

60  

30°  

60°  

50  

90°  

120°  

180°  

40  

T =

 

125°C  

J

30  

20  

0

200  

400  

600  

800  

0

200 400 600 800

 

1000 1200 1400  

Average On-

s

t

ate Cu

r

rent (A)  

Average On-

s

t

ate Cu

r

r

e

nt (A)  

Fig. 3 – Current Ratings Characteristics  

Fig. 6 – On-State Power Loss Characteristics  

Revision: 27-Sep-17  

Document Number: 94408  

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VS-ST330CL Series  

Vishay Semiconductors  

9000  

8500  

8000  

7500  

7000  

6500  

6000  

5500  

5000  

4500  

4000  

3500  

8000  

7500  

7000  

6500  

6000  

5500  

5000  

4500  

4000  

3500  

Maximum Non

R

e

pet

i

t

i

ve

S

u

r

g

e Cu

r

r

e

nt  

Ver

s

u

s

P

u

l

s

e T

r

a

i

n Dur

a

t

i

on. Control  

Of Conduct

i

o

n May Not

B

e

M

aintained.  

At Any

R

a

ted

L

o

ad Cond

i

t

i

o

n And With  

R

a

ted V  

Applied

F

o

llowing

S

u

r

g

e.  

RRM  

Ini

t

i

a

l T =

1

25°C  

J

Ini

t

i

a

l T =

1

25°C  

@60

H

z 0.0083 s  

@50

H

z 0.0100 s  

J

No Voltage

R

e

appl

i

e

d  

Ra t e d

 

V  

Re a p p

l

ie d  

RRM  

ST

3

30C . . L

S

e r

i

e s  

ST

3

30C..L

S

e

r

i

e

s  

1

10  

100  

0.01  

0.1  

P

u

l

s

e T

r

a

 

in Dura

 

t ion

 

(

s

)  

1

Num

b

e

r Of

E

q

u

al Amplitude

H

a

lf Cycle Current

P

u

l

s

e

s(

N

)  

Fig. 7 – Maximum Non-Repetitive Surge Current  

Single and Double Side Cooled  

Fig. 8 – Maximum Non-Repetitive Surge Current  

Single and Double Side Cooled  

10000  

Tj = 125 °C  

1000  

Tj = 25 °C  

ST330C..L Series  

100  

0

1

2

3

4

5

6

7

Instantaneous On-state Voltage (V)  

Fig. 9 – On-State Voltage Drop Characteristics  

1

0.1  

St e a d y

 

St a t e

 

V a l u e  

= 0.11 K

/

W  

R

thJ-hs  

(

S

i

ngle

S

i

d

e Coo

l

e

d)  

= 0.05 K

/

W  

R

thJ-hs  

(Double

S

i

d

e Cooled)  

(DC Operation)  

0

.

0

1  

0.001  

ST

3

3 0C . . L

S

e r i e s  

1

0.001  

0.01  

0.1  

10  

Sq u a

r

e

 

Wa v e

 

Pu l

s

e D

 

u r a t

i

o n

 

(

s

)  

Fig. 10 – Thermal Impedance Z

thJ-hs

Characteristics  

Revision: 27-Sep-17  

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VS-ST330CL Series  

Vishay Semiconductors  

100  

R

e

ctangular gate pu

l

se  

(1)

P

G

M = 10W,

 

tp = 4ms  

a)

R

e

commended

l

o

ad

l

ine for  

r

a

ted di/dt :

2

0V, 10ohm

s

;

t

r

<=1 µs  

b)

R

e

commended

l

o

ad

l

ine for  

<=30

%

r

a

ted d

i

/

dt :

1

0V, 10oh

m

s  

tr<=1 µs  

(2)

P

G

M = 20W,

 

tp = 2ms  

(3)

P

G

M = 40W,

 

tp = 1ms  

(4) PGM = 60W,

 

tp = 0.66ms  

10  

1

(a)  

(b)  

(2)  

(1)  

(3) (4)  

VGD  

IGD  

F

r

e

q

u

en

c

y

L

i

m

i

t

ed by

P

G

(AV)  

10 100  

Device:

S

T

3

30C..

L

S

e

ries  

0.1  

0.1  

0.001  

0

.

0

1  

1

In st a

n

t a ne o us Ga t e

 

C urre nt

 

(A)  

Fig. 11 – Gate Characteristics  

ORDERING INFORMATION TABLE  

Device code  

VS- ST  

33  

0

C

16  

L

1

–

1

2

3

4

5

6

7

8

9

1

2

3

–

–

–

–

Vishay Semiconductors product  

Thyristor  

Essential part number  

0 = converter grade  

4

5

6

7

8

–

–

–

–

C = ceramic PUK  

Voltage code x 100 = V

RRM

(see Voltage Ratings table)  

L = PUK case B-PUK (TO-200AC)  

0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)  

1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)  

2 = eyelet terminals (gate and auxiliary cathode soldered leads)  

3 = fast-on terminals (gate and auxiliary cathode soldered leads)  

9

None = 500 V/µs (standard selection)  

L = 1000 V/µs (special selection)  

–

Critical dV/dt:  

LINKS TO RELATED DOCUMENTS  

Dimensions  

Revision: 27-Sep-17  

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Outline Dimensions  

Vishay Semiconductors  

B-PUK (TO-200AC)  

DIMENSIONS

in millimeters (inches)  

Creepage distance: 36.33 (1.430) minimum  

Strike distance: 17.43 (0.686) minimum  

34 (1.34) DIA. MAX.  

2 places  

0.7 (0.03) MIN.  

C

27 (1.06) MAX.  

Pin receptacle  

AMP. 60598-1  

A

Note:  

0.7 (0.03) MIN.  

53 (2.09) DIA. MAX.  

A = Anode  

C = Cathode  

6.2 (0.24) MIN.  

20° 5°  

4.7 (0.18)  

36.5 (1.44)  

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep  

Quote between upper and lower pole pieces has to be considered after  

application of mounting force (see thermal and mechanical specification)  

Revision: 12-Jul-17  

Document Number: 95076  

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Disclaimer  

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  

disclosure relating to any product.  

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product  

with the properties described in the product specification is suitable for use in a particular application. Parameters provided in  

datasheets and / or specifications may vary in different applications and performance may vary over time. All operating  

parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  

Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited  

to the warranty expressed therein.  

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and  

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Revision: 01-Jan-2023  

Document Number: 91000  

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