Vishay-Intertech-VS-ST330S04P0PBF
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VS-ST330SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
• International standard case TO-118 (TO-209AE)
• Hermetic metal case with ceramic insulator
TO-118 (TO- 209AE)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
• Material
categorization: for definitions of compliance
I
T(AV)
330 A
400 V, 800 V, 1200 V, 1400 V,
1600 V, 2000 V
V
DRM
/V
RRM
TYPICAL APPLICATIONS
• DC
motor controls
V
TM
1.52 V
200 mA
I
GT
T
J
• Controlled
DC power supplies
• AC
controllers
-40 °C to +125 °C
TO-118 (TO-209AE)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
330
UNITS
A
I
T(AV)
T
C
75
°C
I
T(RMS)
520
50 Hz
60 Hz
50 Hz
60 Hz
9000
A
I
TSM
9420
405
I
2
t
kA
2
s
370
V
DRM
/V
RRM
400 to 2000
100
V
t
q
Typical
µs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
V
04
08
12
14
16
20
400
500
900
800
1200
1400
1600
2000
1300
1500
1700
2100
VS-ST330S
50
Revision: 27-Sep-17
Document Number: 94409
1
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,
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,
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VS-ST330SPbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
VALUES UNITS
180° conduction, half sine wave
330
75
A
Maximum average on-state current
at case temperature
°C
Maximum RMS on-state current
I
T(RMS)
DC at 75 °C case temperature
520
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
9000
9420
7570
7920
405
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
370
Maximum I
2
t for fusing
I
2
t
kA
2
s
287
100 % V
RRM
reapplied
262
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
4050
0.834
0.898
0.687
0.636
1.52
600
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
V
r
t2
V
TM
I
H
I
pk
= 1000 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
Maximum holding current
T
J
= 25 °C, anode supply 12 V resistive load
mA
Typical latching current
I
L
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
1000
A/µs
Gate current A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1.0
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
µs
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
Typical turn-off time
100
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
50
V/µs
mA
Maximum peak reverse and
off-state leakage current
I
RRM,
I
DRM
Revision: 27-Sep-17
Document Number: 94409
2
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,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST330SPbF Series
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
T
J
= T
J
maximum, t
p
5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+V
GM
-V
GM
T
J
= T
J
maximum, t
p
5 ms
V
5.0
T
J
= -40 °C
T
J
= 25 °C
200
100
50
–
200
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
Maximum required gate trigger/
T
J
= 125 °C
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
–
V
GT
V
3
–
Maximum gate current/voltage
not to trigger is the maximum
T
J
= T
J
maximum value
which will not trigger any
unit with rated V
DRM
anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10
mA
V
V
GD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.10
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
T
J
°C
T
Stg
R
thJC
R
thC-hs
DC operation
K/W
Mounting surface, smooth, flat and greased
0.03
48.5
(425)
N · m
(lbf · in)
Mounting torque,
10 ꢀ
Non-lubricated threads
Approximate weight
Case style
535
g
See dimension – link at the end of datasheet
TO-118 (TO-209AE)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.011
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94409
3
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,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST330SPbF Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST
3
30 S
S
e r i e s
thJC
ST3
3
0S
S
e
r
i e s
thJC
R
(DC) = 0.10
K
/
W
R
(DC) = 0.10
K
/
W
Conduct
i
o
n Angle
Conduct
i
o
n
P
e
r
iod
30°
60°
90°
30°
80
60°
90°
120°
120°
80
70
180°
180° DC
70
60
0
50 100
150 200 250 300 350
Average On-
s
t
ate Cu
r
rent (A)
0
100 200 300 400 500 600
Average On-
s
t
ate Cu
r
rent (A)
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
480
R
180°
120°
440
=
0
400
360
320
280
240
200
160
120
80
90°
60°
30°
.
0
3
K
/
W
–
D
e
l
t
a
RM S L
i
m it
R
Conduction Angle
ST3 3 0 S Se r
i
e s
0
.
6
K
/
W
T =
125 ° C
J
40
0
0
50 100
150 200 250 300
Average On-
s
t
ate Cu
r
rent (A)
3
5
0
50
75
100
125
Maximum Allowable Ambient
T
e
mpe
r
a
tu
r
e (°C)
Fig. 3 – On-State Power Loss Characteristics
650
600
550
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
R
M
S
L
im it
Conduction
P
e
r
iod
ST3
3
0S
S
e
r
i e s
1
.
2
K
/
W
T =
125°C
J
0
0
100 200 300 400 500
Average On-
s
t
ate Cu
r
rent (A)
6
0
5
0
50
75
100
125
Maximum Allowable Ambient
T
e
m
p
e
r
a
tu
r
e (°C)
Fig. 4 – On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94409
4
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST330SPbF Series
Vishay Semiconductors
9000
8000
7000
6000
5000
4000
3000
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
M
a
x
imum Non
R
e
petitive
S
u
r
g
e Current
Ver
s
u
s
P
u
l
s
e T
r
a
in Duration. Control
At Any
R
a
ted
L
o
ad Condit
i
o
n And With
R
a
ted V
App
l
i
e
d
F
o
l
lo
w
i
ng
S
u
rge.
RRM
Ini
t
i
al T = 125°C
Of Conduction May Not
B
e
M
aintained.
J
I
n
itial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage
R
e
app
l
i
e
d
R
a
ted V
R
e
app
l
i
e
d
RRM
ST
3
30S
S
e
r
i
e
s
ST3 3 0 S Se r
i
e s
1
10
100
0.01
0.1
P
u
l
s
e T
r
ain Dur
a
t
i
on (
s
)
Fig. 6 – Maximum Non-Repetitive Surge Current
1
Nu
m
ber Of
E
q
ual Amp
l
itu
d
e
H
a
l
f Cy
c
l
e Current
P
u
l
s
e
s(N)
Fig. 5 – Maximum Non-Repetitive Surge Current
10000
1000
100
Tj = 25 °C
Tj = 125 °C
ST330S Series
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 – On-State Voltage Drop Characteristics
1
0.1
St e a d y
St a t e
V a
l
u e
= 0.10 K
/
W
R
thJC
(DC Operation)
0.01
0.001
ST
3
30 S
S
e
r
i e s
0.001
0.01
0.1
1
10
Sq u a r e
W
a v e
Pu lse D u r a t io n
( s)
Fig. 8 – Thermal Impedance Z
thJC
Characteristics
Revision: 27-Sep-17
Document Number: 94409
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,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST330SPbF Series
Vishay Semiconductors
100
R
e
ctangular gate pu
l
s
e
(
1
) PGM = 10W,
t
p =
4
ms
a)
R
e
commended
l
o
ad
l
ine for
r
a
ted di/dt :
2
0V, 10ohm
s
;
t
r<=1 µs
b)
R
e
commended load
l
i
n
e for
<=30
%
r
a
ted d
i
/
dt :
1
0V, 10ohms
tr<=1 µs
(
2
) PGM = 20W,
t
p =
2
ms
(
3
) PGM = 40W,
t
p =
1
ms
(
4
) P
G
M = 60W,
t
p =
0
.66
m
s
10
1
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
F
r
equency
L
i
mited by
P
G
(AV)
10
De v ic e :
S
T
3
30S
S
e
r
i e s
0.1
0.1
0.001
0.01
1
100
In st a
n
t a ne o us G a t e
C urre nt
(A )
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
33
0
S
16
P
0
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
–
–
–
–
Vishay Semiconductors product
Thyristor
Essential part number
0 = converter grade
–
–
–
S = compression bonding stud
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
P = stud base 3/4″-16UNF-2A threads
M = stud base metric threads
(M24 x 1.5)
8
9
–
0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
None = standard production
–
–
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Sep-17
Document Number: 94409
6
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,
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,
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Outline Dimensions
Vishay Semiconductors
TO-209AE (TO-118)
DIMENSIONS
in millimeters (inches)
Ceramic housing
22 (0.87) MAX.
4.ꢀ (0.17) DIA.
White gate
10.5 (0.41) NOM.
Red silicon rubber
Red cathode
ꢀ8 (1.50)
MAX. DIA.
White shrink
Red shrink
SW 45
ꢀ/4″16 UNF-2A
(1)
49 (1.92) MAX.
Fast-on terminals
4.5 (0.18) MAX.
AMP. 280000-1
REF-250
Flexible leads
C.S. 50 mm
2
(0.078 s.i.)
Note
(1)
For metric device: M24 x 1.5 – length 21 (0.83) maximum
Document Number: 95080
Revision: 02-Aug-07
1
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Disclaimer
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Revision: 01-Jan-2023
Document Number: 91000
1
