Vishay-Intertech-VS-ST730C12L1

VS-ST700CL Series  

Vishay Semiconductors  

Phase Control Thyristors  

(Hockey PUK Version), 910 A  

FEATURES  

• Center amplifying gate  

• Metal case with ceramic insulator  

• International standard case B-PUK (TO-200AC)  

• Designed and qualified for industrial level  

• Material

 

categorization: for definitions of compliance  

please see

TYPICAL APPLICATIONS  

• DC motor controls  

B-PUK (TO-200AC)  

• Controlled DC power supplies  

• AC controllers



 

PRIMARY CHARACTERISTICS  















I

T(AV)  

910 A  

V

1200 V, 1600 V, 1800 V, 2000 V  

1.80 V  

V

TM  

I

GT  

100 mA  

T

J  

-40 °C to +125 °C  

B-PUK (TO-200AC)  

Single SCR  

Package  

Circuit configuration  



MAJOR RATINGS AND CHARACTERISTICS  

PARAMETER  

TEST CONDITIONS  

VALUES  

910  

UNITS  

A

°C  

A

I

T(AV)  

T

hs  

55  

1857  

I

T(RMS)  

I

TSM  

I

2

t  

T

hs  

25  

°C  

50 Hz  

60 Hz  

50 Hz  

60 Hz  

15 700  

16 400  

1232  

A

kA

2

s  

1125  

V

DRM

/V

RRM  

1200 to 2000  

150  

V

t

q  

Typical  

μs  

°C  

T

J  

-40 to 125  

VOLTAGE RATINGS  

V

DRM

/V

RRM

, MAXIMUM REPETITIVE  

V

RSM

, MAXIMUM  

I

DRM

/I

RRM

MAXIMUM AT  

T

J

= T

J

MAXIMUM  

mA  

TYPE  

NUMBER  

VOLTAGE  

CODE  

PEAK AND OFF-STATE VOLTAGE

 

NON-REPETITIVE PEAK VOLTAGE  

V

V

12  

16  

18  

20  

1200  

1600  

1800  

2000  

1300  

1700  

1900  

2100  

VS-ST700CL  

80  

Revision: 27-Sep-17  

Document Number: 94413  

1

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-ST700CL Series  

Vishay Semiconductors  

ABSOLUTE MAXIMUM RATINGS  

PARAMETER  

SYMBOL  

I

T(AV)  

TEST CONDITIONS  

VALUES  

910 (355)  

55 (85)  

1857  

UNITS  

A

Maximum average on-state current



 

at heatsink temperature  

180° conduction, half sine wave

  

double side (single side) cooled  

°C  

Maximum RMS on-state current  

I

T(RMS)  

DC at 25 °C heatsink temperature double side cooled  

t = 10 ms  

t = 8.3 ms  

t = 10 ms  

t = 8.3 ms  

t = 10 ms  

t = 8.3 ms  

t = 10 ms  

t = 8.3 ms  

15 700  

16 400  

13 200  

13 800  

1232  

No voltage  

reapplied  

A

Maximum peak, one-cycle

  

I

TSM  

non-repetitive surge current  

100 % V

RRM



 

reapplied  

Sinusoidal half wave,

  

initial T

J

= T

J

maximum  

No voltage  

reapplied  

1125  

Maximum I

2

t for fusing  

I

2

t  

kA

2

s  

871  

100 % V

RRM

  

reapplied  

795  

Maximum I

2



t for fusing  

I

2



t  

V

T(TO)1  

V

T(TO)2  

r

t1  

t = 0.1 to 10 ms, no voltage reapplied  

12 321  

1.00  

kA

2



s  

Low level value of threshold voltage  

High level value of threshold voltage  

Low level value of on-state slope resistance  

High level value of on-state slope resistance  

Maximum on-state voltage  

(16.7 % x



x I

T(AV)

< I <



x I

T(AV)

), T

J

= T

J

maximum  

(I >



x I

T(AV)

), T

J

= T

J

maximum  

V

1.13  

(16.7 % x



x I

T(AV)

< I <



x I

T(AV)

), T

J

= T

J

maximum  

(I >



x I

T(AV)

), T

J

= T

J

maximum  

0.40  

m

  

V

r

t2  

0.35  

V

TM  

I

H  

I

pk

= 2000 A, T

J

= T

J

maximum, t

p

= 10 ms sine pulse  

1.80  

Maximum holding current  

600  

T

J

= 25 °C, anode supply 12 V resistive load  

mA  

Typical latching current  

I

L  

1000  

SWITCHING  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

UNITS  

Maximum non-repetitive rate of rise

  

of turned-on current  

Gate drive 20 V, 20



, t

r



1 μs

  

T

J

= T

J

maximum, anode voltage



80 % V

DRM  

dI/dt  

1000  

A/μs  

Gate current 1 A, dI

g

/dt = 1 A/μs

  

Typical delay time  

t

d  

t

q  

1.0  

V

d

= 0.67 % V

DRM

, T

J

= 25 °C  

μs  

I

TM

= 750 A, T

J

= T

J

maximum, dI/dt = 60 A/μs,

  

Typical turn-off time  

150  

V

R

= 50 V, dV/dt = 20 V/μs, gate 0 V 100



, t

p

= 500 μs  

BLOCKING  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

UNITS  

Maximum critical rate of rise of

  

dV/dt  

T

J

= T

J

maximum linear to 80 % rated V

DRM  

T

J

= T

J

maximum, rated V

DRM

/V

RRM

applied  

500  

V/μs  

off-state voltage  

Maximum peak reverse and

  

off-state leakage current  

I

RRM  

,

80  

mA  

I

DRM  

Revision: 27-Sep-17  

Document Number: 94413  

2

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-ST700CL Series  

Vishay Semiconductors  

TRIGGERING  

VALUES  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

UNITS  

Typ. Max.  

Maximum peak gate power  

P

GM  

P

G(AV)  

I

GM  

T

J

= T

J

maximum, t

p



5 ms  

10.0  

2.0  

3.0  

20  

W

A

Maximum average gate power  

T

J

= T

J

maximum, f = 50 Hz, d% = 50  

T

J

= T

J

maximum, t

p



5 ms  

Maximum peak positive gate current  

Maximum peak positive gate voltage  

Maximum peak negative gate voltage  

+V

GM  

-V

GM  

T

J

= T

J

maximum, t

p



5 ms  

V

5.0  

T

J

= -40 °C  

T

J

= 25 °C  

200  

100  

50  

–

200  

–

DC gate current required to trigger  

DC gate voltage required to trigger  

I

GT  

mA  

V

Maximum required gate  

trigger/

  

current/voltage are the lowest  

value which will trigger all units  

12 V anode to cathode applied  

T

J

= 125 °C  

T

J

= -40 °C  

T

J

= 25 °C  

T

J

= 125 °C  

2.5  

1.8  

1.1  

–

V

GT  

3.0  

–

Maximum gate current/voltage  

not to trigger is the maximum  

T

J

= T

J

maximum value

 

which will not trigger any  

unit with rated V

DRM

anode to  

cathode applied  

DC gate current not to trigger  

DC gate voltage not to trigger  

I

GD  

10  

mA  

V

V

GD  

0.25  

THERMAL AND MECHANICAL SPECIFICATIONS  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

-40 to 125  

-40 to 150  

0.073  

UNITS  

Maximum operating junction temperature range  

Maximum storage temperature range  

T

J  

°C  

T

Stg  

DC operation single side cooled  

DC operation double side cooled  

DC operation single side cooled  

DC operation double side cooled  

Maximum thermal resistance, junction to heatsink  

R

thJ-hs  

0.031  

K/W  

0.011  

Maximum thermal resistance, case to heatsink  

Mounting force,

 

10 %  

R

thC-hs  

0.006  

14 700  

(1500)  

N

(kg)  

Approximate weight  

Case style  

255  

g

See dimensions – link at the end of datasheet  

B-PUK (TO-200AC)  



R

thJ-hs

CONDUCTION  

SINUSOIDAL CONDUCTION

 

RECTANGULAR CONDUCTION  

CONDUCTION ANGLE  

TEST CONDITIONS  

UNITS  

SINGLE SIDE

 

DOUBLE SIDE

 

SINGLE SIDE

 

DOUBLE SIDE  

180°  

120°  

90°  

0.009  

0.011  

0.014  

0.020  

0.036  

0.009  

0.011  

0.014  

0.020  

0.036  

0.006  

0.011  

0.015  

0.021  

0.036  

0.006  

0.011  

0.015  

0.021  

0.036  

T

J

= T

J

maximum  

K/W  

60°  

30°  

Note  

•

The table above shows the increment of thermal resistance R

thJ-hs

when devices operate at different conduction angles than DC  

Revision: 27-Sep-17  

Document Number: 94413  

3

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-ST700CL Series  

Vishay Semiconductors  

130  

120  

110  

100  

90  

130  

120  

110  

100  

90  

ST

7

00C . . L

S

e r

i

e s  

ST

7

00C . . L

S

e r

i

e s  

(Double

S

i

d

e Cooled)  

(

S

i

ngle

S

i

de Cooled)  

R

(DC) = 0.031 K

/

W  

R

(DC) = 0.073 K

/

W  

th

J

-hs  

th

J

-hs  

Conduction

P

e

riod  

80  

Conduction Angle  

70  

80  

30°  

60  

60°  

70  

30°  

90°  

60°  

50  

90°  

60  

120°  

40  

120°  

180°  

180°  

DC  

50  

30  

20  

40  

0

400  

800  

1200 1600 2000  

0

100 200 300 400 500 600 700  

Average On-

s

t

ate Cu

r

r

e

nt (A)  

Average On-

s

t

ate Cu

r

rent (A)  

Fig. 1 – Current Ratings Characteristics  

Fig. 4 – Current Ratings Characteristics  

2800  

130  

ST

7

00C . . L

S

e r

i

e s  

180°  

120°  

90°  

120  

110  

100  

90  

(

S

i

ngle

S

i

de Coole

d

)  

2400  

2000  

1600  

1200  

800  

400  

0

R

(DC) = 0.073 K

/

W  

thJ-hs  

60°  

30°  

RM S Lim it  

Conduction

P

e

r

iod  

80  

70  

60  

Conduction Angle  

ST

7

00C . . L

S

e r

i

e s  

50  

30°  

60°  

40  

90°  

T =

 

125°C  

120°  

180°  

DC  

J

30  

20  

0

200 400 600 800

 

1000 1200  

Average On-

s

t

ate Current (A)  

0

200  

400  

600  

800  

1000  

Average On-

s

t

ate Cu

r

rent (A)  

Fig. 2 – Current Ratings Characteristics  

Fig. 5 – On-State Power Loss Characteristics  

3500  

DC  

130  

ST

7

00C . . L

S

e r

i

e s  

120  

110  

100  

90  

(Double

S

i

d

e Cooled)  

180°  

3000  

R

(DC) = 0.031 K

/

W  

120°  

90°  

th

J

-hs  

2500  

60°  

30°  

2000  

Conduction

P

e

riod  

80  

RM S Lim it  

70  

1500  

30°  

60  

60°  

Conduction

P

e

r

i

o

d  

1000  

90°  

50  

120°  

ST

7

0 0C . . L

S

e r

i

e s  

J

40  

500  

T =

 

125°C  

180°  

DC  

30  

0

20  

0

400  

800  

1200 1600 2000  

0

400  

800  

1200 1600 2000  

Average On-

s

t

ate Cu

r

rent (A)  

Average On-

s

t

ate Current (A)  

Fig. 3 – Current Ratings Characteristics  

Fig. 6 – On-State Power Loss Characteristics  

Revision: 27-Sep-17  

Document Number: 94413  

4

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-ST700CL Series  

Vishay Semiconductors  

14000  

13000  

12000  

11000  

10000  

9000  

16000  

15000  

14000  

13000  

12000  

11000  

10000  

9000  

At Any

R

a

ted

L

o

ad Condition And With  

Maximum Non

R

e

pet

i

t

i

ve

S

u

r

g

e Current  

Ver

s

u

s

P

u

l

s

e T

r

ain Duration. Control  

R

a

ted V  

Applied

F

o

llowing

S

u

r

g

e.  

RRM  

I

n

i

t

i

a

l T =

1

25°C  

Of Conduction May Not

B

e

M

aintained.  

J

I

n

itial T = 125°C  

@60 Hz 0.0083 s  

@50 Hz 0.0100 s  

J

No Voltage

R

e

app

l

ied  

Ra t e d

 

V  

Re a p p

l

ie d  

RRM  

8000  

8000  

7000

S

T

7

00C

 

. . L

S

e r

i

e s  

ST

7

00C . . L

S

e r

i

e s  

7000  

6000  

1

6000  

10  

100  

0.01  

0.1  

P

u

l

s

e T

r

a

 

in Dura

 

t ion

 

(

s

)  

1

Num

b

er Of

E

q

u

al Amplitu

d

e

H

a

l

f Cycle Current

P

u

l

s

e

s(

N

)  

Fig. 7 – Maximum Non-Repetitive Surge Current  

Single and Double Side Cooled  

Fig. 8 – Maximum Non-Repetitive Surge Current  

Single and Double Side Cooled  

10000  

1000  

100  

T = 25°C  

J

T = 125°

 

C  

J

ST

7

00 C . . L

S

e r

i

e s  

0.5  

1

1.5  

2

2.5  

3

3.5  

4

In

s

t

antaneousOn-

s

t

ate Voltage (V)  

Fig. 9 – On-State Voltage Drop Characteristics  

0.1  

0.01  

ST

7

00C..

L

S

e

ries  

St e a d y

 

St a t e

 

V a l u e  

= 0.073 K/ W  

R

thJ-hs  

(

S

i

ngle

S

i

d

e Coo

l

e

d)  

= 0.031 K/ W  

R

thJ-hs  

(Double

S

i

d

e Cooled)  

(DC Operation)  

0.001  

0.001  

0.01  

0

.

1  

Sq u a

r

e

 

Wa v e

 

Pu l

s

e D

 

u r a t i o n

 

( s)  

1

10  

Fig. 10 – Thermal Impedance Z

thJ-hs

Characteristics  

Revision: 27-Sep-17  

Document Number: 94413  

5

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-ST700CL Series  

Vishay Semiconductors  

100  

R

e

ctangular gate pu

l

se  

(1)

P

G

M = 10W,

 

tp = 4ms  

a)

R

e

commended

l

o

ad

l

ine for  

r

a

ted di/dt :

2

0V, 10ohm

s

;

t

r

<=1 µs  

b)

R

e

commended

l

o

ad

l

ine for  

<=30

%

r

a

ted d

i

/

dt :

1

0V, 10oh

m

s  

tr<=1 µs  

(2)

P

G

M = 20W,

 

tp = 2ms  

(3)

P

G

M = 40W,

 

tp = 1ms  

(4)

P

G

M = 60W,

 

tp = 0.66ms  

10  

1

(a)  

(b)  

(2)  

(1)  

(3) (4)  

VGD  

IGD  

F

r

e

q

u

en

c

y

L

i

m

i

t

ed by

P

G

(AV)  

10 100  

Device:

S

T

7

00C..

L

S

e

ries  

0.1  

0.1  

0.001  

0

.

0

1  

1

I

n

s

t

antaneousGate Cu

r

r

e

nt (A)  

Fig. 11 – Gate Characteristics  

ORDERING INFORMATION TABLE  

Device code  

VS- ST  

70  

0

C

20  

L

1

–

1

2

3

4

5

6

7

8

9

1

2

3

4

5

6

7

8

–

–

–

–

Vishay Semiconductors product  

Thyristor  

Essential part number  

0 = converter grade  

–

–

–

–

C = ceramic PUK  

Voltage code x 100 = V

RRM

(see Voltage Ratings table)  

L = PUK case B-PUK (TO-200AC)  

0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)  

1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)  

2 = eyelet terminals (gate and auxiliary cathode soldered leads)  

3 = fast-on terminals (gate and auxiliary cathode soldered leads)  

None = 500 V/µs (standard selection)  

L = 1000 V/µs (special selection)  

9

–

Critical dV/dt:  

LINKS TO RELATED DOCUMENTS  

Dimensions  

Revision: 27-Sep-17  

Document Number: 94413  

6

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

Outline Dimensions  

Vishay Semiconductors  

B-PUK (TO-200AC)  

DIMENSIONS

in millimeters (inches)  

Creepage distance: 36.33 (1.430) minimum  

Strike distance: 17.43 (0.686) minimum  

34 (1.34) DIA. MAX.  

2 places  

0.7 (0.03) MIN.  

C

27 (1.06) MAX.  

Pin receptacle  

AMP. 60598-1  

A

Note:  

0.7 (0.03) MIN.  

53 (2.09) DIA. MAX.  

A = Anode  

C = Cathode  

6.2 (0.24) MIN.  

20° 5°  

4.7 (0.18)  

36.5 (1.44)  

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep  

Quote between upper and lower pole pieces has to be considered after  

application of mounting force (see thermal and mechanical specification)  

Revision: 12-Jul-17  

Document Number: 95076  

1

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

Legal Disclaimer Notice  

Vishay  

Disclaimer  

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  

disclosure relating to any product.  

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  

purpose, non-infringement and merchantability.  

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product  

with the properties described in the product specification is suitable for use in a particular application. Parameters provided in  

datasheets and / or specifications may vary in different applications and performance may vary over time. All operating  

parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  

Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited  

to the warranty expressed therein.  

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and  

for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of  

any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.  

Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website  

or for that of subsequent links.  

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  

contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  

© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  

Revision: 01-Jan-2023  

Document Number: 91000  

1