Vishay-Intertech-VS-ST780C06L0L
| Part # | Vishay-Intertech-VS-ST780C06L0L |
Download  | Vishay-Intertech-VS-ST780C06L0L |
VS-ST780CL Series
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1350 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case B-PUK (TO-200AC)
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
TYPICAL APPLICATIONS
• DC motor controls
B-PUK (TO-200AC)
• Controlled DC power supplies
• AC controllers
PRIMARY CHARACTERISTICS
I
T(AV)
1350 A
V
DRM
/V
RRM
400 V, 600 V
1.31 V
V
TM
I
GT
100 mA
T
J
-40 °C to +125 °C
B-PUK (TO-200AC)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
1350
UNITS
A
°C
A
I
T(AV)
T
hs
55
2700
I
T(RMS)
I
TSM
I
2
t
T
hs
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
24 400
25 600
2986
A
kA
2
s
2726
V
DRM
/V
RRM
400 to 600
150
V
t
q
Typical
μs
°C
T
J
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
NON-REPETITIVE PEAK VOLTAGE
AT T
J
= T
J
MAXIMUM
V
mA
04
06
400
600
500
700
VS-ST780C..L
80
Revision: 19-Dec-2019
Document Number: 94415
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST780CL Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave
VALUES UNITS
1350 (500)
55 (85)
2700
A
Maximum average on-state current
at heatsink temperature
double side (single side) cooled
°C
Maximum RMS on-state current
I
T(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
24 400
25 600
20 550
21 500
2986
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
2726
Maximum I
2
t for fusing
I
2
t
kA
2
s
2112
100 % V
RRM
reapplied
1928
Maximum I
2
√
t for fusing
I
2
√
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
29 860
0.80
kA
2
√
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
V
0.90
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
0.14
m
Ω
V
r
t2
0.13
V
TM
I
H
I
pk
= 3600 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
1.31
Maximum holding current
600
T
J
= 25 °C, anode supply 12 V resistive load
mA
Typical latching current
I
L
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20
Ω
, t
r
≤
1 μs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
dI/dt
1000
A/µs
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
Typical delay time
t
d
t
q
1.0
µs
I
TM
= 750 A, T
J
= T
J
maximum, dI/dt = 60 A/μs,
Typical turn-off time
150
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
Ω
, t
p
= 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
500
80
V/µs
mA
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
Revision: 19-Dec-2019
Document Number: 94415
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST780CL Series
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP.
MAX.
P
GM
P
G(AV)
I
GM
T
J
= T
J
maximum, t
p
≤
5 ms
Maximum peak gate power
10.0
2.0
3.0
20
W
A
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤
5 ms
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ V
GM
– V
GM
T
J
= T
J
maximum, t
p
≤
5 ms
V
5.0
T
J
= -40 °C
200
100
50
–
200
–
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
mA
Maximum required gate
trigger/current/voltage are the
lowest value which will trigger
all units 12 V anode to cathode
applied
–
2.5
1.8
1.1
V
GT
V
3.0
–
Maximum gate
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
10
0.25
mA
V
current/voltage not to trigger
is the maximum value which
will not trigger any unit with
rated V
DRM
anode to cathode
T
J
= T
J
maximum
V
GD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.073
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
T
J
°C
T
Stg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
R
thJ-hs
0.031
K/W
0.011
Maximum thermal resistance, case to heatsink
Mounting force,
10 %
R
thC-hs
0.006
14 700
(1500)
N
(kg)
Approximate weight
Case style
255
g
See dimensions – link at the end of datasheet
B-PUK (TO-200AC)
Δ
R
thJ-hs
CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 19-Dec-2019
Document Number: 94415
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST780CL Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST
7
80C . . L
S
e r
i
e s
ST7
8
0C . . L
S
e r
i
e s
(
S
i
ngle
S
i
d
e Coo
l
e
d)
(DC) = 0.073
K
/
W
(Double
S
i
d
e Coo
l
e
d)
R
(DC) = 0.031 K
/
W
R
thJ-hs
thJ-hs
Conduction
P
e
r
i
o
d
80
Conduction Angle
70
80
30°
60
30°
70
60°
60°
90°
50
90°
60
120°
120°
40
180°
800
180°
DC
50
30
20
40
0
500 1000
1500 2000 2500 3000
0
200
400
600
1000
Average On-
s
t
ate Cu
r
rent (A)
Fig. 1 – Current Ratings Characteristics
Average On-
s
t
ate Cu
r
rent (A)
Fig. 4 – Current Ratings Characteristics
130
2500
ST
7
80C . . L
S
e
r
ie s
180°
120°
90°
120
110
100
90
(
S
i
n
g
l
e
S
i
d
e Cooled)
R
(DC) = 0.073
K
/
W
thJ-hs
2000
1500
1000
500
0
60°
30°
R
M
S
L
im it
Conduction
P
e
riod
80
70
60
Conduction Angle
ST
7
80C..L
S
e
r
i
e
s
30°
50
60°
40
90°
120°
T =
125°C
J
30
180°
DC
20
0
200 400 600 800
1000 1200 1400
Average On-
s
t
ate Cu
r
rent (A)
0
400
800
1200 1600 2000
Average On-
s
t
ate Cu
r
rent (A)
Fig. 5 – On-State Power Loss Characteristics
Fig. 2 – Current Ratings Characteristics
130
3500
ST
7
80C..L
S
e
r
i
e
s
DC
180°
120°
90°
120
110
100
90
(Double
S
i
d
e Cooled)
3000
2500
2000
1500
1000
500
R
(DC) = 0.031 K
/
W
thJ-hs
60°
30°
Conduction Angle
80
RM S L
i
m it
70
60
Conduction
P
e
r
iod
ST
7
80C..L
S
e
ries
30°
60°
50
90°
120°
40
180°
T =
125°C
J
30
20
0
0
400
Average On-
s
t
ate Current (A)
Fig. 3 – Current Ratings Characteristics
800
1200 1600 2000
0
500 1000
1500 2000 2500 3000
Average On-
s
t
ate Cu
r
rent (A)
Fig. 6 – On-State Power Loss Characteristics
Revision: 19-Dec-2019
Document Number: 94415
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST780CL Series
Vishay Semiconductors
26000
22000
20000
18000
16000
14000
12000
10000
Maximum Non
R
e
pet
i
t
i
ve
S
u
r
g
e Current
Ver
s
u
s
P
u
l
s
e T
r
a
i
n Dur
a
tion. Control
Of Conduction May
N
o
t
B
e
M
a
i
ntained.
At Any
R
a
ted
L
o
ad Cond
i
t
i
o
n And With
R
a
ted V
App
l
i
e
d
F
o
llo
w
i
n
g
S
u
r
g
e.
RRM
24000
Ini
t
i
a
l T =
1
25°C
J
Ini
t
i
a
l T =
1
25°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
22000
No Voltage
R
e
appl
i
e
d
Ra t e d
V
Re a p p
l
ie d
20000
RRM
18000
16000
14000
12000
S
T
7
80C . . L
S
e
r
ie s
ST
7
80C . . L
S
e r
i
e s
10000
0.01
0.1
P
u
lse
T
r
ain Duration (
s
)
1
1
10
100
Num
b
e
r
O
f
E
q
ual Amplitude
H
a
l
f Cy
c
l
e Current Pulse
s
(
N)
Fig. 7 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 – Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T = 25°
C
J
1000
T = 125°C
J
ST
7
80C . . L
S
e r
i
e s
100
0.5
1
1.5
2
2.5
I
n
s
t
antaneo
u
s
On-
s
t
ate Voltage (V)
Fig. 9 – On-State Voltage Drop Characteristics
0.1
0.01
S
t
eady
S
t
ate Va
l
ue
= 0.073 K/ W
R
th
J
–
hs
(
S
i
ngle
S
i
d
e Cooled)
= 0.031 K/ W
R
thJ-hs
(Double
S
i
d
e Cooled)
(DC Operat
i
o
n)
ST
7
80C . . L
S
e r
i
e s
1
0.001
0.001
0
.
0
1
0
.
1
10
Sq u a
r
e
Wa v e
Pu l
s
e D
u r a t
i
o n
(
s
)
Fig. 10 – Thermal Impedance Z
thJ-hs
Characteristics
Revision: 19-Dec-2019
Document Number: 94415
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-ST780CL Series
Vishay Semiconductors
100
R
e
c
tangu
l
a
r gate pu
l
s
e
(1) PGM = 10W,
t
p =
4
ms
a)
R
e
commended
l
o
ad line for
r
a
ted di
/
dt :
2
0V, 10ohm
s
;
t
r<=1 µs
b)
R
e
commended
l
o
a
d
l
ine for
<=30
%
r
ated di/
dt : 10V, 10ohms
t
r
<=1 µs
(2) PGM = 20W,
t
p =
2
ms
(3) PGM = 40W,
t
p =
1
ms
(4) PGM = 60W,
t
p =
0
.66
m
s
10
1
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
F
r
e
quency
L
i
m
i
t
ed by
P
G
(AV)
10 100
Device:
S
T
7
80C..
L
S
e
r
ies
0.1
0.1
0.001
0.01
1
In
s
t
antaneousGate Cur
r
e
nt (A)
Fig. 11 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
78
0
C
06
L
1
–
1
2
3
4
5
6
7
8
9
1
2
3
–
–
Vi
s
hay
S
emiconductor
s
product
Thyristor
–
–
E
ss
ential part number
0 = converter grade
4
5
6
7
8
–
–
–
–
C = ceramic PUK
Voltage code x 100 = V
RRM
(
s
ee Voltage Rating
s
table)
L = PUK ca
s
e B-PUK (TO-200AC)
0 = eyelet terminal
s
(gate and auxiliary cathode un
s
oldered lead
s
)
1 = fa
s
t-on terminal
s
(gate and auxiliary cathode un
s
oldered lead
s
)
None = 500 V/μ
s
(
s
tandard
s
election)
L = 1000 V/μ
s
(
s
pecial
s
election)
9
–
Critical dV/dt:
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 19-Dec-2019
Document Number: 94415
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
B-PUK (TO-200AC)
DIMENSIONS
in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
34 (1.34) DIA. MAX.
2 places
0.7 (0.03) MIN.
C
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
A
Note:
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
A = Anode
C = Cathode
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Revision: 12-Jul-17
Document Number: 95076
1
For technical questions within your region:
DiodesAmericass@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
