Vishay-Intertech-VS-T90RIA120
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VS-
T
.
.RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Power Modules), 50 A, 70 A, 90 A
FEATURES
• Electrically isolated base plate
• Types up to 1200 V
RRM
• 3500 V
RMS
isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
D-55 (T-mo
d
ule)
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
D-55 (T-module)
DESCRIPTION
Single SCR
50 A, 70 A, 90 A
100 V, 1200 V
These series of T-modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment, regulated power supplies and temperature and
speed control circuits. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built.
V
DRM
/V
RRM
V
TM
1.55 V
I
GT
120 mA
T
J
-40 °C to +125 °C
Modules – thyristor, standard
Type
MAJOR RATINGS AND CHARACTERISTICS
VALUES
T50RIA
VALUES
T70RIA
VALUES
T90RIA
SYMBOL
CHARACTERISTICS
UNITS
I
T(AV)
70 °C
50
70
110
90
141
A
A
I
T(RMS)
80
50 Hz
60 Hz
50 Hz
60 Hz
1310
1660
1780
I
TSM
I
2
t
A
1370
1740
1870
8550
13 860
12 650
138 500
100 to 1200
-40 to +125
15 900
14 500
159 100
100 to 1200
A
2
s
7800
I
2
t
V
RRM
T
J
85 500
100 to 1200
A
2
s
V
Range
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
/V
DRM
,
V
RSM
, MAXIMUM
I
RRM
/I
DR
M
MAXIMUM
AT T
J
= 25 °C
μA
TYPE
NUMBER
VOLTAGE MAXIMUM
REPETITIVE PEAK REVERSE
NON-REPETITIVE PEAK REVERSE
CODE
AND PEAK OFF-STATE VOLTAGE
V
VOLTAGE
V
10
20
100
200
150
300
40
400
500
VS-T50RIA
VS-T70RIA
VS-T90RIA
60
600
700
100
80
800
900
100
120
1000
1200
1100
1300
Revision: 27-Jul-2018
Document Number: 93756
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-
T
.
.RIA Series
Vishay Semiconductors
ON-STATE CONDUCTION
VALUES VALUES VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
T50RIA T70RIA T90RIA
50
70
90
A
°C
A
Maximum average on-state current at
case temperature
I
T(AV)
180° conduction, half sine wave
70
70
70
Maximum RMS on-state current
I
T(RMS)
80
110
141
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1310
1370
1100
1150
8550
7800
6050
5520
1660
1740
1400
1460
1780
1870
1500
1570
No voltage
reapplied
Maximum peak, one-cycle on-state,
non-repetitive surge current
I
TSM
A
100 % V
RRM
reapplied
Sine half wave,
initial
T
J
= T
J
maximum
13 860
15 900
12 650
14 500
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
A
2
s
9800
8950
11 250
10 270
100 % V
RRM
reapplied
Maximum I
2
t for fusing
I
2
t
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
85 500
138 500
159 100
A
2
s
Low level value of threshold voltage
High level value of threshold voltage
V
T(TO)1
V
T(TO)2
0.97
1.13
0.77
0.88
0.78
0.88
V
Low level value of on-state slope
resistance
r
t1
r
t2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
4.1
3.3
3.6
3.2
2.9
2.6
m
High level value of on-state slope
resistance
I
TM
=
x I
T(AV)
, T
J
= 25 °C, t
p
= 400 μs square
Maximum on-state voltage drop
V
TM
1.60
1.55
1.55
V
V
2
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
I
TM
=
x I
T(AV)
, T
J
= 25 °C, t
p
= 400 μs square
Maximum forward voltage drop
Maximum holding current
Maximum latching current
V
FM
I
H
1.60
200
400
1.55
200
400
1.55
200
400
2
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
Anode supply = 6 V, initial I
T
= 30 A, T
J
= 25 °C
mA
Anode supply = 6 V, resistive load = 10
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
I
L
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
T
J
= 25 °C, V
d
= 50 % V
DRM
, I
TM
= 50 A
I
g
= 500 mA, t
r
0.5, t
p
6 μs
Typical turn-on time
t
gd
t
rr
0.9
3
Typical reverse recovery time
Typical turn-off time
T
J
= 125 °C, I
TM
= 50 A, t
p
= 300 μs, dI/dt = 10 A/μs
μs
T
J
= T
J
maximum, I
TM
= 50 A, t
p
= 300 μs, dI/dt = 15 A/μs,
t
q
110
V
R
= 100 V, linear to 80 % V
DRM
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
15
UNITS
mA
Maximum peak reverse and off-state
leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum
RMS isolation voltage
V
ISOL
50 Hz, circuit to base, all terminals shorted, T
J
= 25 °C, t = 1 s
3500
500
V
Critical rate of rise of
off-state voltage
(1)
dV/dt
T
J
= T
J
maximum, linear to 80 % rated V
DRM
V/μs
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. T90RIA80S90
Revision: 27-Jul-2018
Document Number: 93756
2
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-
T
.
.RIA Series
Vishay Semiconductors
TRIGGERING
VALUES VALUES VALUES
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
T50RIA T70RIA T90RIA
S
Maximum peak gate power
P
GM
P
G(AV)
I
GM
T
J
= T
J
maximum, t
p
5 ms
10
2.5
2.5
10
12
3
12
3
W
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
T
J
= T
J
maximum, f = 50 Hz
3
3
A
V
T
J
= T
J
maximum, t
p
5 ms
-V
GT
10
4.0
2.5
1.5
270
120
60
10
T
J
= -40 °C
T
J
= 25 °C
4.0
2.5
1.5
250
100
50
4.0
2.5
1.5
270
120
60
Maximum required DC gate voltage to
trigger
V
GT
V
Anode supply = 6 V,
resistive load;
Ra = 1
T
J
= T
J
maximum
T
J
= -40 °C
Maximum required DC gate current to
trigger
I
GT
T
J
= 25 °C
mA
T
J
= T
J
maximum
Maximum gate voltage that will not
trigger
V
GD
I
GD
0.2
5.0
0.2
6.0
0.2
6.0
V
T
J
= T
J
maximum, rated V
DRM
applied
Maximum gate current that will not
trigger
mA
200
180
160
150
200
180
160
150
200
180
160
150
V
D
= 0.67 rated V
DRM
, I
TM
= 2 x rated dI/dt
I
g
= 400 mA for T50RIA and I
g
= 500 mA for
T70RIA/T90RIA; t
r
< 0.5 μs, t
p
6 μs
For repetitive value use 40 % non-repetitive
per JEDEC
®
STD. RS397, 5.2.2.6
Maximum rate of rise of turned-on
current
dI/dt
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
VALUES VALUES VALUES
T50RIA T70RIA T90RIA
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
Maximum junction operating
T
J
-40 to +125
-40 to +150
temperature range
°C
Maximum storage
temperature range
T
Stg
Maximum thermal resistance,
R
thJC
R
thCS
DC operation
0.65
0.50
0.38
junction to case per junction
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth, flat and greased
0.2
to heatsink
terminals
M3.5 mounting screws
(1)
1.3 10
%
Non-lubricated
threads
Mounting torque,
10 %
Nm
g
M5 screw terminals
3
10 %
54
Approximate weight
Case style
D-55 (T-module)
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
DEVICES
UNITS
180°
0.08
0.07
0.05
120°
0.10
0.08
0.06
90°
0.13
0.10
0.08
60°
0.19
0.14
0.12
30°
0.31
0.24
0.20
180°
0.06
0.05
0.04
120°
0.10
0.08
0.06
90°
0.14
0.11
0.09
60°
0.20
0.15
0.12
30°
0.32
0.24
0.20
T50RIA
T70RIA
T90RIA
K/W
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Jul-2018
Document Number: 93756
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-
T
.
.RIA Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
T50RIA.. Series
thJC
T50RIA.. Series
thJC
R
(DC) = 0.65 K/W
R
(DC) = 0.65 K/W
Conduction Angle
Conduction Period
80
80
30°
20
70
70
60°
90°
120°
90°
60°
120°
40
60
60
30°
180°
180°
50
DC
50
50
0
10
30
60
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
80
R
0
180°
.
7
K
70
60
50
40
30
20
10
0
/
W
120°
90°
60°
30°
=
0
1
.
K
1K
/
W
/
W
–
D
1
.
5
e
K
l
t
/
a
W
R
RMS Limit
2
K
/
W
Conduction Angle
T50RIA.. Series
T =
125°C
J
0
10
20
30
40
500
Maximum Allowable Ambient Temperature (°C)
Fig. 3 – On-State Power Loss Characteristics
20
40
60
80
100 120
Average On-state Current (A)
110
100
90
80
70
60
50
40
30
20
10
0
0
DC
.
3
K
180°
120°
90°
/
W
0
.
5
K
/
W
0
.
7
K
/
W
60°
30°
RMS Limit
3
K
Conduction Period
T50RIA.. Series
/
W
T =
125°C
J
0
10 20 30 40 50 60 70
8
00
20
40
60
80
100 120
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 – On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 93756
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-
T
.
.RIA Series
Vishay Semiconductors
1300
1200
1100
1000
900
1200
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T
= 125°C
J
Initial T
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo
l
tage Reapplied
Rated V
Reapplied
RRM
800
800
700
700
600
T50RIA.. Series
600
T50RIA.. Series
500
0.01
500
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitud
e
H
alf Cycl
e
C
u
r
rent Pulses (N)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
1000
100
10
T =
25°C
J
T =
125°C
J
T50RIA.. Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 7 – On-State Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W,
tp = 5ms
(2) PGM = 20W,
tp = 2ms
(3) PGM = 50W,
tp = 1ms
(4) PGM = 100W,
tp = 500µs
a) Recommended load line for
rated di/dt : 20V, 30ohms;
tr=0.5µs, tp>=6µs
b) Recommended load line for
<=30
%
r
ated di/dt : 20V, 65ohms
tr=1µs, tp>=6µs
(a)
(b)
(1)
(4)
(2)
(3)
VGD
IGD
T50RIA.. Series
Frequency Limited by PG(AV)
10 100
0.1
0.001
0.01
0.1
1
1000
Instantaneous Gate Current (A)
Fig. 8 – Gate Characteristics
Revision: 27-Jul-2018
Document Number: 93756
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-
T
.
.RIA Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
T70RIA.. Series
T70RIA.. Series
thJC
R
(DC) = 0.50 K/W
R
(DC) = 0.50 K/W
thJC
Conduction Angle
Conduction Period
80
80
60°
30°
70
70
60°
30°
90°
90°
120°
120°
60
60
180°
180°
80
DC
50
50
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0
20
40
60
100 120
Average On-state Current (A)
Fig. 10 – Current Ratings Characteristics
Fig. 9 – Current Ratings Characteristics
100
180°
90
t
h
120°
S
A
90°
80
60°
30°
70
60
50
40
30
20
10
0
RMS Limit
Conduction Angle
T70RIA.. Series
T =
125°C
J
0
10 20 30 40 50 60
7
0
0
Average On-state Current (A)
20
40
60
80
100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 11 – On-State Power Loss Characteristics
140
120
100
80
DC
180°
120°
90°
R
0
.
3
=
K
0
.
/
W
1
K
0
/
.
5
W
K
–
60°
/
W
D
e
l
t
a
30°
R
RMS Limit
60
1
.
5
K
/
W
2
Conduction Period
T70RIA.. Series
K
/
W
40
20
T =
125°C
J
0
0
20
Average On-state Current (A)
Fig. 12 – On-State Power Loss Characteristics
40
60
80
100 1
0
20
20
40
60
80
100 120
Maximum Allowable Ambient Temperature (°C)
Revision: 27-Jul-2018
Document Number: 93756
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-
T
.
.RIA Series
Vishay Semiconductors
1700
1600
1500
1400
1300
1200
1100
1000
900
1500
1400
1300
1200
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T
= 125°C
J
Initial T
= 125°C
@
6
0 Hz 0.0083 s
@
5
0 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
800
T70RIA.. Series
T70RIA.. Series
800
700
600
0.01
700
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 13 – Maximum Non-Repetitive Surge Current
Fig. 14 – Maximum Non-Repetitive Surge Current
1000
100
10
T =
25°C
J
T =
125°C
J
T70RIA.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Fig. 15 – On-State Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 12W,
tp = 5ms
(2) PGM = 30W,
tp = 2ms
(3) PGM = 60W,
tp = 1ms
(4) PGM = 200W,
tp = 300µs
a) Recommended load line for
rated di/dt : 20V, 20ohms;
tr=0.5µs, tp>=6µs
b) Recommended load line for
<=30
%
r
ated di/dt : 15V, 40ohms
tr=1µs, tp>=6µs
(a)
(b)
(1)
(2)
(3)
(4)
VGD
T70RIA.., T90RIA.. Series
Frequency Limited by PG(AV)
0.1 10
100 1000
IGD
0.01
0.1
0.001
1
Instantaneous Gate Current (A)
Fig. 16 – Gate Characteristics
Revision: 27-Jul-2018
Document Number: 93756
7
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-
T
.
.RIA Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
T90RIA.. Series
thJC
T90RIA.. Series
thJC
R
(DC) = 0.38 K/W
R
(DC) = 0.38 K/W
Conduction Period
Conduction Angle
80
80
30°
70
70
90°
60°
60°
90°
120°
120°
60
60
180°
100
30°
180°
DC
50
50
0
20 40 60 80
100 120 140 160
Average On-state Current (A)
0
20
40
60
80
Average On-state Current (A)
Fig. 17 – Current Ratings Characteristics
Fig. 18 – Current Ratings Characteristics
140
R
180°
0
.
120°
3
120
K
=
/
W
90°
0
0
.
.
1
5
K
60°
K
/
W
/
W
100
80
60
40
20
0
30°
–
0
.
7
D
K
e
/
W
l
t
a
RMS Limit
R
Conduction Angle
T90RIA Series
T =
125°C
J
0
10 20 30 40 50 60 70 80
9
0
Average On-state Current (A)
20
40
60
80
100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 19 – On-State Power Loss Characteristics
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
RMS Limit
1
.
5
K
/
60
W
Conduction Period
T90RIA.. Series
40
20
T =
125°C
J
0
0
20 40 60 80
100 120 140 1
0
60
20
Average On-state Current (A)
Fig. 20 – On-State Power Loss Characteristics
40
60
80
100 120
Maximu
m
A
llowable Ambient Temperature (°C)
Revision: 27-Jul-2018
Document Number: 93756
8
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,
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VS-
T
.
.RIA Series
Vishay Semiconductors
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
1600
1500
1400
1300
1200
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T
= 125°C
J
Initial T
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
T90RIA.. Series
T90RIA.. Series
800
800
700
0.01
700
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 21 – Maximum Non-Repetitive Surge Current
Fig. 22 – Maximum Non-Repetitive Surge Current
1000
100
10
T =
25°C
J
T =
125°C
J
T90RIA.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 23 – On-State Voltage Drop Characteristics
1
Steady State Value
R
R
R
= 0.65 K/W
= 0.50 K/W
= 0.38 K/W
thJC
thJC
thJC
T50RIA.. Series
T70RIA.. Series
(DC Operation)
0.1
T90RIA.. Series
0.01
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 24 – Thermal Impedance Z
thJC
Characteristics
Revision: 27-Jul-2018
Document Number: 93756
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VS-
T
.
.RIA Series
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
T
50 RIA
120
1
2
3
4
5
1
–
–
–
–
–
Vishay Semiconductors product
Module type
2
3
4
5
Current rating
Circuit configuration
Voltage code x 10 = V
RRM
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
2
G
Single SCR
1
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Jul-2018
Document Number: 93756
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Outline Dimensions
Vishay Semiconductors
D-55 (T-Module) Thyristor Standard
DIMENSIONS
in millimeters (inches)
ꢀ0.ꢀ ꢀ0ꢀ3
(ꢀ0ꢀ2 ꢀ0ꢀꢀ1ꢁ
407. ꢀ01
(ꢀ019 ꢀ0ꢀꢀ4ꢁ
103 (ꢀ0ꢀ.ꢁ
32 (1026ꢁ max0
26
1
230. ꢀ0.
(ꢀ093 ꢀ0ꢀ2ꢁ
3
ꢀ0.
(10ꢀ2 ꢀ0ꢀ4ꢁ
(ꢀ012 ꢀ0ꢀ2ꢁ
41 (1061ꢁ max0
18
11
(ꢀ071ꢁ
(ꢀ043ꢁ
309 ꢀ0ꢀ.
(ꢀ01. ꢀ0ꢀꢀ2ꢁ
3 (ꢀ012ꢁ
2
8
ꢀ03
27 ꢀ03
(10ꢀ6 ꢀ0ꢀ1ꢁ
1. (ꢀ0.9ꢁ
(ꢀ031 ꢀ0ꢀ1ꢁ
1
M.
3ꢀ (1018ꢁ
Note
1 = anode
2 = cathode
•
Revision: 24-Apr-17
Document Number: 95336
1
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Revision: 01-Jan-2023
Document Number: 91000
1
