Vishay-Intertech-VS-VSKH142-16PBF
| Part # | Vishay-Intertech-VS-VSKH142-16PBF |
Download  | Vishay-Intertech-VS-VSKH142-16PBF |
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI
2
O
3
)
• 3500 V
RMS
isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
IN
T
–
A-PAK
• Designed and qualified for multiple level
• Material
categorization: for definitions of compliance
PRIMARY CHARACTERISTICS
I
T(AV)
Type
135 A to 160 A
Modules – thyristor, standard
INT-A-PAK
APPLICATIONS
• DC motor control and drives
• Battery charges
Package
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.136..
VSK.142..
140
VSK.162..
UNITS
I
T(AV)
85 °C
135
160
355
A
I
T(RMS)
300
310
50 Hz
60 Hz
50 Hz
60 Hz
3200
4500
4870
A
I
TSM
I
2
t
3360
4712
5100
51.5
102
119
kA
2
s
47
92.5
108
I
2
t
V
RRM
T
J
515.5
400 to 1600
1013
1190
kA
2
s
V
Range
Range
400 to 1600
-40 to +125
400 to 1600
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
V
RSM
/V
DSM
, MAXIMUM NON-REPETITIVE
I
RRM
/I
DRM
AT 125 °C
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
04
08
12
14
16
400
800
500
900
VS-VSK.136
VS-VSK.142
VS-VSK.162
1200
1400
1600
1300
1500
1700
50
Revision: 27-Jul-2018
Document Number: 94513
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
VSK.136 VSK.142 VSK.162
UNITS
135
85
140
85
160
85
A
Maximum average on-state current
at case temperature
°C
Maximum RMS on-state current
I
T(RMS)
300
310
355
4870
5100
4100
4300
119
108
84
t = 10 ms
3200
3360
2700
2800
51.5
47
4500
4712
3785
3963
102
No voltage
reapplied
t = 8.3 ms
Maximum peak, one-cycle
on-state, non-repetitive
surge current
A
I
TSM
t = 10 ms
10
0
%
V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
92.5
71.6
65.4
1013
0.83
1
Maximum I
2
t for fusing
I
2
t
kA
2
s
36.5
33.3
515.5
0.86
1.05
10
0
%
V
RRM
reapplied
76.7
1190
0.8
Maximum I
2
t for fusing
I
2
t
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
V
T(TO)1
V
T(TO)2
V
0.98
Low level value on-state
r
t1
r
t2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
2.02
1.65
1.78
1.43
1.67
1.38
slope resistance
m
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
V
TM
V
FM
I
H
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
Anode supply = 6 V initial I
T
= 30 A, T
J
= 25 °C
1.57
1.57
1.55
1.55
200
1.54
1.54
V
V
mA
Anode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
Maximum latching current
I
L
400
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical delay time
Typical rise time
t
gd
t
gr
1
2
Gate current = 1 A, dl
g
/dt = 1 A/μs
T
J
= 25 °C
V
d
= 0.67 % V
DRM
μs
I
TM
= 300 A, – dl/dt = 15 A/μs; T
J
= T
J
maximum
Typical turn-off time
t
q
50 to 200
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
I
RRM
I
DRM
,
T
J
= 125 °C
50
mA
50 Hz, circuit to base,
RMS insulation voltage
V
INS
3500
1000
V
all terminals shorted, t = 1 s
Critical rate of rise of
off-state voltage
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
dV/dt
V/μs
Revision: 27-Jul-2018
Document Number: 94513
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
VALUES
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
12
3
W
A
P
G(AV)
I
GM
f = 50 Hz, T
J
= T
J
maximum
3
t
p
5 ms, T
J
= T
J
maximum
Maximum peak negative
gate voltage
– V
GT
10
T
J
= – 40 °C
T
J
= 25 °C
4
V
Maximum required DC
gate voltage to trigger
V
GT
2.5
1.7
270
150
80
T
J
= T
J
maximum
T
J
= – 40 °C
Anode supply = 6 V,
resistive load; R
a
= 1
Maximum required DC
gate current to trigger
I
GT
T
J
= 25 °C
mA
T
J
= T
J
maximum
Maximum gate voltage
that will not trigger
V
GD
I
GD
0.3
10
V
T
J
= T
J
maximum, rated V
DRM
applied
Maximum gate current
that will not trigger
mA
A/μs
Maximum rate of rise of
turned-on current
dI/dt
T
J
= T
J
maximum, I
TM
= 400 A rated V
DRM
applied
300
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.136 VSK.142 VSK.162 UNITS
Maximum junction operating
temperature range
T
J
-40 to +125
°C
Maximum storage
temperature range
T
Stg
R
thJC
R
thCS
-40 to +150
Maximum thermal resistance,
junction to case per junction
DC operation
0.18
0.18
0.05
0.16
K/W
Nm
Maximum thermal resistance,
case to heatsink per module
Mounting surface, smooth, flat and greased
IAP to heatsink
busbar to IAP
Mounting
torque 10
%
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
4 to 6
200
7.1
g
Approximate weight
Case style
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
DEVICES
UNITS
180°
0.007
120°
90°
60°
30°
180°
0.009
120°
0.012
90°
60°
30°
VSK.136
VSK.142
VSK.162
0.01
0.013
0.0020
0.0032
0.0155
0.0020
0.0033
0.017
0.0021
0.0034
0.014
0.0023
0.0039
0.015
0.0023
0.0041
0.017
0.0020
0.0040
0.0019
0.0030
0.0019
0.0031
0.0018
0.0029
0.0022
0.0036
K/W
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Jul-2018
Document Number: 94513
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
350
130
VSK.136.. Series
thJC
DC
180
120
90
R
(DC) = 0.18 K/W
300
250
200
150
100
50
RMS Limit
120
110
100
60
Conduction Angle
30
90
80
70
30°
Conduction Period
60°
90°
VSK.136.. Series
Per Junction
120°
100
180°
T
=
1
2
5
°C
J
0
0
20
40
60
80
120 140
0
50
100
150
200
250
Average Forward Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – On-State Power Loss Characteristics
130
120
110
100
90
3000
VSK.136.. Series
thJC
A t
A ny
Rated Load Condit
i
o
n And W
ith
Rated V
Applied Following Surge.
R
(DC) = 0.18 K/W
RRM
2800
2600
2400
2200
2000
1800
1600
1400
1200
I
n
i
t
ial T
= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
Conduction Period
30°
50
60°
90°
80
120°
VSK.136.. Series
Per Junction
180°
150
DC
70
0
100
200
250
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
300
250
200
150
100
50
3500
Maximum Non Repetitive Surge Current
180
120
90
Ve
r
sus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
3000
2500
2000
1500
1000
I
n
i
tial T
= 125°C
J
60
No Vo
l
tage Reappl
i
e
d
30
Rated V
Reapplied
RRM
RMS Limit
Conduction Angle
VSK.136.. Series
Per Junction
VSK.136.. Series
Per Junction
T
= 125°C
J
0
0
30
60
90
120
150
0.01
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 – On-State Power Loss Characteristics
Fig. 6 – Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 94513
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
450
0
R
.
0
0
8
.
0
K
400
4
/
W
180
120
90
K
/
W
0.01
350
300
250
200
150
100
50
K
/
60
W
30
–
Δ
Conduct
i
o n
A
ngle
0
.
4
R
K
/
W
VSK.136.. Series
Per Module
T
= 12
5
°C
J
0
0
0
0
50
100
150
200
250
3
00
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 – On-State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
t
h
S
A
180
(Sine)
180
(Rect)
0
.
3
5
K
/
W
2 x VSK.136.. Series
Single Phase Bridge
Connected
0
.
6 K
/
W
T
=
1
2
5
°C
J
55
110
165
220
2
7
5
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 – On-State Power Loss Characteristics
1500
1200
900
600
300
0
120
(Rect)
0
.
1
K
/
W
3 x VSK.136.. Series
Three Phase Bridge
C
o
nnected
0
1
.
4
K
/
W
K
/
W
T
=
1
2
5
°C
J
100
200
300
400
25
50
75
100
125
M
a
xim um
Allowable Am
bient Tem
perature
(
°C)
Total O
utput Current (A)
Fig. 9 – On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 94513
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
130
120
110
100
90
350
DC
180
120
90
VSK.142.. Series
thJC
R
(DC) = 0.18 K/W
300
250
200
150
100
50
60
30
Conduct
i
o
n Angle
RMS Lim
it
30
Conduct
i
o
n Per
i
o
d
60
90
VSK.142.. Series
Per Junction
80
120
180
120
T
=
1
2
5
°C
J
70
0
0
30
60
90
150
0
50
100
150
200
250
Average Forward Current (A)
Average On-state Current (A)
Fig. 10 – Current Ratings Characteristics
Fig. 13 – On-State Power Loss Characteristics
130
4500
VSK.142.. Series
(
D
C) = 0.18 K/W
A t
A ny
Rated Load Condit
i
o
n And W
ith
Rated V
App
l
ied Following Surge.
I
n
i
tial T
= 125°C
R
thJC
RRM
120
110
100
90
J
4000
3500
3000
2500
2000
1500
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduct
i
o
n Period
30
60
90
120
80
180
VSK.142.. Series
Per Junct
i
o
n
DC
200
70
0
50
100
150
250
1
10
100
Number Of Equa
l Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 11 – Current Ratings Characteristics
Fig. 14 – Maximum Non-Repetitive Surge Current
250
5000
Maximum Non Repetitive Surge Current
180
120
90
Ve
r
sus Pulse Train Duration. Control
4500
4000
3500
3000
2500
2000
1500
O f
C
onduction May Not Be Ma
i
n
tained.
200
150
100
50
I
n
i
tial T
= 125°C
J
60
No Vo
l
t
age Reapp
l
ied
Rated
V
R
RM
R
eapp
l
i
e
d
30
RMS Limit
Conduction Angle
VSK.142.. Series
Per Junction
VSK.142.. Series
Per Junction
T =
1
2
5
°C
J
0
0
30
60
90
120
150
0.01
0.1
1
Average On-state Current (A)
Pu
l
se Train
D
urat
i
o
n (s)
Fig. 12 – On-State Power Loss Characteristics
Fig. 15 – Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 94513
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
400
0
0
.
1
.
1
2
t
6
h
K
S
K
/
A
/
W
180
120
90
W
0
.
2
5
300
200
100
0
K
/
W
60
30
0
.
6
K
/
W
C
o
nduct
i
o n
A n
g
le
1
K
/
W
VSK.142.. Series
Per Modu
l
e
T
= 12
5
°C
J
0
50
100
150
200
250
300
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 – On-State Power Loss Characteristics
1000
800
600
400
200
0
0
.
0
4
K
/
0
W
.
0
8
K
/
W
180
(Sine)
180
0
.
1
6
K
/
W
(Rect)
2 x VSK.142.. Series
Single Phase Bridge
C
o
nnected
T
=
1
2
5
°C
J
0
100
200
300
25
50
75
100
125
Total O
utput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 – On-State Power Loss Characteristics
1600
1200
800
400
0
R
=
0
.
0
2
K
120
/
W
(Rect)
–
Δ
R
3 x VSK.142.. Series
Three Phase Bridge
Connected
T
=
1
2
5
°C
J
0
50 100
150 200 250 300 350 400 4
5
0
Total Output Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 18 – On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 94513
7
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
130
120
110
100
90
400
VSK.162.. Series
DC
R
(DC) = 0.16 K/W
thJC
350
300
250
200
150
100
50
180
120
90
60
30
Conduction Angle
RMS Limit
30
Conduction Period
60
VSK.162.. Series
Per Junction
90
80
120
120
T
=
1
2
5
°C
180
150
J
0
70
0
30
60
90
180
0
30 60 90
120 150 180 210 240 270
Average On-state Current (A)
Average Forw
ard Current (A)
Fig. 19 – Current Ratings Characteristics
Fig. 22 – On-State Power Loss Characteristics
130
4500
VSK.162.. Series
(DC )
= 0.16 K/W
At A
ny Rated Load Cond
i
tion And W
ith
Rated V
Applied Following Surge.
R
RRM
thJC
120
110
100
90
I
n
i
tial T
= 125°C
4000
3500
3000
2500
2000
1500
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
30
60
80
90
120
150
70
VSK.162.. Series
Per Junct
i
o
n
180
DC
60
0
50
100
200
250
300
1
10
100
Num ber
O f
Equa l
Am plitud e
Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 20 – Current Ratings Characteristics
Fig. 23 – Maximum Non-Repetitive Surge Current
400
5000
Maximum Non Repetitive Surge Current
VSK.162.. Series
Per Junction
Ve
r
sus Pulse Train Duration. Control
350
300
250
200
150
100
50
4500
4000
3500
3000
2500
2000
1500
O f
C
onduction May Not Be Ma
i
n
tained.
T
=
1
2
5
°C
J
I
n
i
tial T
= 125°C
J
No Vo
l
t
age Reapplied
180
120
90
60
30
Rated V
Reapplied
RRM
RMS Limit
VSK.162.. Series
Per Junction
Conduction Angle
0
0
20 40 60 80
100 120 140 160 180
Average On-state Current (A)
0.01
0.1
Pu
l
se Train
D
urat
i
o
n (s)
1
Fig. 21 – On-State Power Loss Characteristics
Fig. 24 – Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 94513
8
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
600
R
t
h
S
A
180
500
=
120
90
0
.
0
2
K
/
60
400
300
200
100
0
W
–
30
Δ
R
Conduct
i
o n
A
ngle
0
.
2
K
/
W
VSK.162.. Series
Per Module
T
= 12
5
°C
J
0
100
200
300
40
0
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 25 – On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
0
.
0
t
8
h
K
S
/
A
W
180
(Sine)
180
(Rect)
0
.
3
K
/
W
2 x VSK.162.. Series
Single Phase Bridge
Connected
0
.
6
K
/
W
T
=
1
2
5
°C
J
25
50
75
100
125
0
50
100
150
200
250
300
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 26 – On-State Power Loss Characteristics
1500
1250
1000
750
500
250
0
0
.
0
4
K
/
W
0
.
0
8
K
/
W
120
(Rect)
3 x VSK.162.. Series
0
.
3
K
/
W
Three Phase Bridge
Connected
0
.
6
K
/
W
T
J
= 12
5
°C
0
50 100
150 200 250 300 350 400
4
5
0
25
50
75
100
125
M
a
xim um
Allowable Am
bient Tem
perature
(
°C)
Total Output Current (A)
Fig. 27 – On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 94513
9
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
10000
1000
100
10
1
Steady State Value
(DC Operation)
T =
25˚C
0.1
0.01
J
T =
125˚C
J
VSK.136.. Series
Per Junction
VSK.136.. Series
1
0.001
0
1
2
3
4
5
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Instantaneous On-state Voltage (V)
Fig. 28 – On-State Voltage Drop Characteristics
Fig. 31 – Thermal Impedance Z
thJC
Characteristics
1
10000
1000
Steady State Value
(DC Operation)
T =
25˚C
J
T =
125˚C
J
100
10
0.1
VSK.142.. Series
Per Junction
VSK.142.. Series
1
0.01
0.01
0
1
2
3
4
5
0.1
1
10
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 29 – On-State Voltage Drop Characteristics
Fig. 32 – Thermal Impedance Z
thJC
Characteristics
1
10000
1000
Steady State Value
(DC Operation)
T =
25˚C
J
T =
125˚C
J
0.1
100
10
VSK.162.. Series
Per Junction
VSK.162.. Series
1
0.01
0.01
0
1
2
3
4
5
0.1
1
10
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 30 – On-State Voltage Drop Characteristics
Fig. 33 – Thermal Impedance Z
thJC
Characteristics
Revision: 27-Jul-2018
Document Number: 94513
10
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
100
Rectangular gate p
ulse
(1) PGM = 200 W
, tp = 300 s
a)Recomm ended
l
o
a d
line for
(2) PGM = 60 W
, tp = 1 m
s
r
a
ted dI/dt: 20 V, 20
W
(3) PGM = 30 W
, tp = 2 m
s
(4) PGM = 12 W
, tp = 5 m
s
tr = 0.5 s, tp >= 6 s
b)Recomm ended
loa d
line for
<= 30% ra
ted d
I/dt: 15 V, 40
W
tr = 1 s, tp >= 6 s
10
1
(a)
(
b
)
(4)
(3) (2)
(1)
VG D
IG D
Frequency Lim
ited by PG(AV
)
10 100
VSK.136..142..162.. Series
0.1
0.1
0.001
0.01
1
1000
Instantaneous Gate Current (A)
Fig. 34 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KT
162 16 PbF
1
2
3
4
5
1
2
3
4
5
–
–
–
–
Vishay Semiconductors product
Circuit configuration
Current rating: I
T(AV)
Voltage code x 100 = V
RRM
–
PbF = Lead (Pb)-free
Note
•
Revision: 27-Jul-2018
Document Number: 94513
11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
CONFIGURATION CODE
~
VSKT…
+
Two SCRs doubler circuit
T
+
–
–
K1 K2
G1 G2
~
VSKH…
+
SCR/diode doubler circuit, positive control
H
+
–
–
K1
G1
~
VSKL…
+
SCR/diode doubler circuit, negative control
L
+
–
–
K2
G2
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Jul-2018
Document Number: 94513
12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
DIMENSIONS
in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
17 (0.67)
23 (0.91)
23 (0.91)
5 (0.20)
1
2
3
66 (2.60)
94 (3.70)
37 (1.44)
3 screws M6 x 10
Document Number: 95067
Revision: 15-Feb-08
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
