Vishay-Intertech-VS-VSKH230-16PBF
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VS-VSK.230..PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 230 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
MAGN-A-
P
A
K
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
DESCRIPTION
PRIMARY CHARACTERISTICS
This VSK series of MAGN-A-PAK modules uses high voltage
power thyristor/thyristor and thyristor/diode in seven
basic
configurations. The semiconductors are electrically isolated
from the metal base, allowing common heatsinks and
compact assemblies to be built. They can be interconnected
to form single phase or three phase bridges or as
AC-switches when modules are connected in anti-parallel
mode. These modules are intended for general purpose
applications such as battery chargers, welders, motor
drives, UPS, etc.
I
T(AV)
230 A
Type
Modules – thyristor, standard
MAGN-A-PAK
Package
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
230
UNITS
I
T(AV)
85 °C
I
T(RMS)
510
A
50 Hz
60 Hz
50 Hz
60 Hz
7500
I
TSM
7850
280
I
2
t
kA
2
s
260
I
2
t
280
kA
2
s
V
V
DRM
/V
RRM
800 to 2000
-40 to +130
T
J
Range
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
V
RSM
, MAXIMUM
I
RRM
/I
DRM
VOLTAGE
CODE
NON-REPETITIVE PEAK
AT 130 °C
MAXIMUM
mA
TYPE NUMBER
REVERSE VOLTAGE
V
08
12
16
18
20
800
900
1200
1600
1800
2000
1300
1700
1900
2100
VS-VSK.230-
50
Revision: 12-Nov-2018
Document Number: 93053
1
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,
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VS-VSK.230..PbF Series
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
VALUES
230
UNITS
A
Maximum average on-state current
at case temperature
I
T(AV)
85
°C
Maximum RMS on-state current
I
T(RMS)
510
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
7500
7850
6300
6600
280
No voltage
reapplied
A
Maximum peak, one-cycle on-state
I
TSM
non-repetitive, surge current
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial
No voltage
reapplied
T
J
= T
J
maximum
256
Maximum I
2
t for fusing
I
2
t
kA
2
s
198
100 % V
RRM
reapplied
181
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
2800
1.03
1.07
0.77
0.73
kA
2
s
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
r
t2
I
TM
=
x I
T(AV)
, T
J
= T
J
maximum, 180° conduction,
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
V
TM
I
H
1.59
500
V
2
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C
mA
Anode supply
12 V, resistive load = 1
,
=
I
L
1000
gate pulse: 10 V, 100 μs, T
J
= 25 °C
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1.0
UNITS
Typical delay time
Typical rise time
t
d
t
r
T
J
= 25 °C, gate current = 1 A dI
g
/dt = 1 A/μs,
V
d
= 0.67 % V
DRM
2.0
μs
I
TM
= 300 A; dI/dt = 15 A/μs; T
J
= T
J
maximum;
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
Typical turn-off time
t
q
50 to 150
V
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
I
RRM,
I
DRM
T
J
= T
J
maximum
50
mA
RMS insulation voltage
V
INS
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
J
= T
J
maximum, exponential to 67 % rated V
DRM
3000
1000
V
Critical rate of rise of off-state voltage
dV/dt
V/μs
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
t
p
5 ms, T
J
= T
J
maximum
t
p
5 ms, T
J
= T
J
maximum
T
J
= -40 °C
VALUES
10.0
2.0
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
P
G(AV)
+ I
GM
3.0
– V
GT
5.0
4.0
V
Anode supply = 12 V,
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
V
GT
T
J
= 25 °C
3.0
resistive load; Ra = 1
T
J
= T
J
maximum
T
J
= – 40 °C
2.0
350
200
100
0.25
10.0
500
Anode supply = 12 V,
resistive load; Ra = 1
I
GT
T
J
= 25 °C
mA
T
J
= T
J
maximum
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
Maximum rate of rise of turned-on current
V
GD
I
GD
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, I
TM
= 400 A, rated V
DRM
applied
V
mA
A/μs
dI/dt
Revision: 12-Nov-2018
Document Number: 93053
2
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.230..PbF Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +130
-40 to +150
UNITS
Junction operating temperature range
Storage temperature range
T
J
°C
T
Stg
Maximum thermal resistance,
R
thJC
R
thCS
DC operation
0.125
0.02
junction to case per junction
K/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth, and greased
A mounting compound is recommended and
the torque should be rechecked after a period
of about 3 h to allow for the spread of the
compound.
MAGN-A-PAK to heatsink
busbar to MAGN-A-PAK
Mounting
torque 10
%
4 to 6
500
g
Approximate weight
Case style
17.8
oz.
MAGN-A-PAK
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.230-
0.009
0.010
0.010
0.020
0.032
0.007
0.011
0.015
0.020
0.033
K/W
Note
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
•
130
130
V
S
K.230..
S
erie
s
V
S
K.230..
S
erie
s
R
thJC
(DC) = 0.125 K/W
R
thJC
(DC) = 0.125 K/W
120
110
100
90
120
110
100
90
Ø
Conduction Angle
Conduc
t
Ø
ion Period
30°
30°
60°
80
80
60°
90°
90°
120°
120°
70
70
180°
240
DC
180°
60
60
0
40
80
120
160
200
0
50
100 150 200 250 300 350
400
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
Revision: 12-Nov-2018
Document Number: 93053
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.230..PbF Series
Vishay Semiconductors
350
7000
6500
6000
180°
120°
90°
60°
30°
At any rated load condition and with
rated V
RRM
applied following
s
urge
300
250
200
150
100
50
Initial T
J
= 130 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
5500
RM
S
limit
5000
4500
4000
Ø
Conduction Angle
V
S
K.230..
S
erie
s
Per Junction
T
J
= 130 °C
3500
3000
V
S
K.230..
S
erie
s
Per Junction
0
0
50
100
150
200
250
1
10
100
Num
b
er Of Equal Amplitu
d
e
Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 3 – On-State Power Loss Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
350
7500
180°
120°
90°
60°
30°
Maximum non repetitive
s
urge current
v
s
. pul
s
e drain duration.Control of
conduction may not be maintained.
7000
6500
6000
5500
5000
300
250
200
150
100
50
DC
Initial T
J
= 130 °C
No voltage reapplied
Rated V
RRM
applied
RM
S
limit
Conduc
t
Ø
ion Period
4500
V
S
K.230..
S
erie
s
Per Junction
T
J
= 130 °C
4000
3500
V
S
K.230..
S
erie
s
Per Junction
0
3000
0
50 100
150 200 250 300 350 400
0.01
0.1
1
Average On-
S
tate Current (A)
Pulse
T
r
ain Duration (s)
Fig. 6 – Maximum Non-Repetitive Surge Current
Fig. 4 – On-State Power Loss Characteristics
700
0.1 K/W
0.12
W
0.06 K/W
0.08 K/W
0.03 K/W
R
th
180°
S
120°
90°
60°
30°
A
600
500
400
300
Ø
= 0.01 K/W –
Ø
0.16 K/W
0.2 K/W
0.25 K/W
0.3 K/W
Conduction Angle
Δ
R
200
V
S
K.230..
S
erie
s
Per Module
T
J
= 130 °C
100
0
0
100
200
300
400
500
20
40
60
80
100
120
T
o
tal RM
S
Output Current (A)
Maximum Allowa
b
le Am
b
ient Temperature (°C)
Fig. 7 – On-State Power Loss Characteristics
Revision: 12-Nov-2018
Document Number: 93053
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.230..PbF Series
Vishay Semiconductors
1500
1350
0.06 K/W
+
–
0.08 K/W
0.03 K/W
R
th
S
0.1 K/W
A
1200
1050
180° (
S
ine)
180° (Rect.)
= 0.01 K/W –
0.16 K/W
900
750
600
450
300
Δ
0.2 K/W
1.5 K/W
R
2 x V
S
K.230..
S
erie
s
S
ingle pha
s
e bridge
connected
150
0
T
J
= 130 °C
0
50 100
150 200 250 300 350
400 450
20
40
60
80
100
120
T
o
tal Output Current (A)
Maximum Allowa
b
le Am
b
ient Temperature (°C)
Fig. 8 – On-State Power Loss Characteristics
2000
1800
0.01 K/W
0.02 K/W
0.03 K/W
+
0.04 K/W
R
th
S
0.05 K/W
0.06 K/W
A
= 0.005 K/W –
1600
1400
120° (Rect.)
–
0.08 K/W
0.1 K/W
1200
1000
800
Δ
R
0.12 K/W
0.16 K/W
600
3 x V
S
K.230..
S
erie
s
Three pha
s
e bridge
connected
400
0.25 K/W
200
0
T
J
= 130 °C
0
100
200
300
400
500
600
20
40
60
80
100
120
T
o
tal Output Current (A)
Maximum Allowa
b
le Am
b
ient Temperature (°C)
Fig. 9 – On-State Power Loss Characteristics
10 000
1000
100
1800
1600
1400
1200
1000
800
V
S
K.230..
S
erie
s
Per Junction
T
J
= 130 °C
I
TM
= 800 A
500 A
300 A
200 A
100 A
T
J
= 25 °C
T
J
= 130 °C
50 A
600
V
S
K.230..
S
erie
s
Per Junction
400
200
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
10 20 30 40 50 60 70 80 90
100
Instantaneous On-
S
tate Voltage (V)
Fig. 10 – On-State Voltage Drop Characteristics
d
I/
d
t – Rate of Fall of On-
S
tate Current (A/μs)
Fig. 11 – Reverse Recovery Charge Characteristics
Revision: 12-Nov-2018
Document Number: 93053
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,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.230..PbF Series
Vishay Semiconductors
100
Rectangular gate pul
s
e
(1) P
G
M = 10 W, tp = 4 m
s
(2) P
G
M = 20 W, tp = 2 m
s
(3) P
G
M = 40 W, tp = 1 m
s
(4) P
G
M = 60 W, tp = 0.66 m
s
a) Recommended load line for
rated di
F
/dt : 20 V, 10
Ω
; t
r
< = 1μ
s
b) Recommended load line for
< = 30% rated di/dt : 10 V, 20
Ω
t
r
< = 1 μ
s
10
1
(a)
(b)
(1)
(2) (3)
(4)
V
G
D
I
G
D
0.01
V
S
K.230
S
erie
s
Fre
q
uency Limited by P
G
(AV)
0.1
0.1
0.001
1
10
100
Instantaneous
G
ate Current (A)
Fig. 12 – Gate Characteristics
1
0.1
S
teady
S
tate Value:
R
thJC
= 0.125 K/W
(DC Operation)
V
S
K.230..
S
erie
s
0.01
0.001
0.001
0.01
0.1
1
10
100
S
quare Wave Pulse Duration (s)
Fig. 13 – Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KT
230
–
20
PbF
1
2
3
4
5
–
–
–
–
–
Vishay Semiconductors product
1
2
3
4
5
Circuit configuration (see dimensions – link at the end of datasheet)
Current rating
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
• None = standard production
• PbF = lead (Pb)-free
Note
•
Revision: 12-Nov-2018
Document Number: 93053
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.230..PbF Series
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
~
~
+
+
–
VSKT…
Two SCRs doubler circuit
KT
KH
KL
KK
–
K
1
G
1 G2K2
Available 800 V: contact factory for different requirements
~
~
+
+
–
VSKH…
SCR/diode doubler circuit, positive control
–
K
1
G
1
Available 800 V: contact factory for different requirements
~
~
+
+
–
VSKL…
SCR/diode doubler circuit, negative control
–
Available 800 V: contact factory for different requirements
+
+
–
–
–
VSKK…
Two SCRs common cathodes
–
G2K2
Available 800 V: contact factory for different requirements
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 12-Nov-2018
Document Number: 93053
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Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS
in millimeters (inches)
Ø 5.5
35 (1.38)
28 (1.12)
3 screws M8 x 1.25
80 (3.15)
9 (0.35)
6 (0.24)
115 (4.53)
HEX 13
92 (3.62)
Notes
• Dimensions
are nominal
• Full
engineering drawings are available on request
• UL
identification number for gate and cathode wire: UL 1385
• UL
identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
1
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
Document Number: 91000
1
