Vishay-Intertech-VS-VSKL142-12PBF
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VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI
2
O
3
)
• 3500 V
RMS
isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
IN
T
–
A-PAK
• Designed and qualified for multiple level
• Material
categorization: for definitions of compliance
PRIMARY CHARACTERISTICS
I
T(AV)
Type
135 A to 160 A
Modules – thyristor, standard
INT-A-PAK
APPLICATIONS
• DC motor control and drives
• Battery charges
Package
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.136..
VSK.142..
140
VSK.162..
UNITS
I
T(AV)
85 °C
135
160
355
A
I
T(RMS)
300
310
50 Hz
60 Hz
50 Hz
60 Hz
3200
4500
4870
A
I
TSM
I
2
t
3360
4712
5100
51.5
102
119
kA
2
s
47
92.5
108
I
2
t
V
RRM
T
J
515.5
400 to 1600
1013
1190
kA
2
s
V
Range
Range
400 to 1600
-40 to +125
400 to 1600
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
V
RSM
/V
DSM
, MAXIMUM NON-REPETITIVE
I
RRM
/I
DRM
AT 125 °C
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
04
08
12
14
16
400
800
500
900
VS-VSK.136
VS-VSK.142
VS-VSK.162
1200
1400
1600
1300
1500
1700
50
Revision: 27-Jul-2018
Document Number: 94513
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
VSK.136 VSK.142 VSK.162
UNITS
135
85
140
85
160
85
A
Maximum average on-state current
at case temperature
°C
Maximum RMS on-state current
I
T(RMS)
300
310
355
4870
5100
4100
4300
119
108
84
t = 10 ms
3200
3360
2700
2800
51.5
47
4500
4712
3785
3963
102
No voltage
reapplied
t = 8.3 ms
Maximum peak, one-cycle
on-state, non-repetitive
surge current
A
I
TSM
t = 10 ms
10
0
%
V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
92.5
71.6
65.4
1013
0.83
1
Maximum I
2
t for fusing
I
2
t
kA
2
s
36.5
33.3
515.5
0.86
1.05
10
0
%
V
RRM
reapplied
76.7
1190
0.8
Maximum I
2
t for fusing
I
2
t
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
V
T(TO)1
V
T(TO)2
V
0.98
Low level value on-state
r
t1
r
t2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
2.02
1.65
1.78
1.43
1.67
1.38
slope resistance
m
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
V
TM
V
FM
I
H
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
Anode supply = 6 V initial I
T
= 30 A, T
J
= 25 °C
1.57
1.57
1.55
1.55
200
1.54
1.54
V
V
mA
Anode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
Maximum latching current
I
L
400
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical delay time
Typical rise time
t
gd
t
gr
1
2
Gate current = 1 A, dl
g
/dt = 1 A/μs
T
J
= 25 °C
V
d
= 0.67 % V
DRM
μs
I
TM
= 300 A, – dl/dt = 15 A/μs; T
J
= T
J
maximum
Typical turn-off time
t
q
50 to 200
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
I
RRM
I
DRM
,
T
J
= 125 °C
50
mA
50 Hz, circuit to base,
RMS insulation voltage
V
INS
3500
1000
V
all terminals shorted, t = 1 s
Critical rate of rise of
off-state voltage
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
dV/dt
V/μs
Revision: 27-Jul-2018
Document Number: 94513
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
VALUES
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
12
3
W
A
P
G(AV)
I
GM
f = 50 Hz, T
J
= T
J
maximum
3
t
p
5 ms, T
J
= T
J
maximum
Maximum peak negative
gate voltage
– V
GT
10
T
J
= – 40 °C
T
J
= 25 °C
4
V
Maximum required DC
gate voltage to trigger
V
GT
2.5
1.7
270
150
80
T
J
= T
J
maximum
T
J
= – 40 °C
Anode supply = 6 V,
resistive load; R
a
= 1
Maximum required DC
gate current to trigger
I
GT
T
J
= 25 °C
mA
T
J
= T
J
maximum
Maximum gate voltage
that will not trigger
V
GD
I
GD
0.3
10
V
T
J
= T
J
maximum, rated V
DRM
applied
Maximum gate current
that will not trigger
mA
A/μs
Maximum rate of rise of
turned-on current
dI/dt
T
J
= T
J
maximum, I
TM
= 400 A rated V
DRM
applied
300
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.136 VSK.142 VSK.162 UNITS
Maximum junction operating
temperature range
T
J
-40 to +125
°C
Maximum storage
temperature range
T
Stg
R
thJC
R
thCS
-40 to +150
Maximum thermal resistance,
junction to case per junction
DC operation
0.18
0.18
0.05
0.16
K/W
Nm
Maximum thermal resistance,
case to heatsink per module
Mounting surface, smooth, flat and greased
IAP to heatsink
busbar to IAP
Mounting
torque 10
%
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
4 to 6
200
7.1
g
Approximate weight
Case style
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
DEVICES
UNITS
180°
0.007
120°
90°
60°
30°
180°
0.009
120°
0.012
90°
60°
30°
VSK.136
VSK.142
VSK.162
0.01
0.013
0.0020
0.0032
0.0155
0.0020
0.0033
0.017
0.0021
0.0034
0.014
0.0023
0.0039
0.015
0.0023
0.0041
0.017
0.0020
0.0040
0.0019
0.0030
0.0019
0.0031
0.0018
0.0029
0.0022
0.0036
K/W
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Jul-2018
Document Number: 94513
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
350
130
VSK.136.. Series
thJC
DC
180
120
90
R
(DC) = 0.18 K/W
300
250
200
150
100
50
RMS Limit
120
110
100
60
Conduction Angle
30
90
80
70
30°
Conduction Period
60°
90°
VSK.136.. Series
Per Junction
120°
100
180°
T
=
1
2
5
°C
J
0
0
20
40
60
80
120 140
0
50
100
150
200
250
Average Forward Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – On-State Power Loss Characteristics
130
120
110
100
90
3000
VSK.136.. Series
thJC
A t
A ny
Rated Load Condit
i
o
n And W
ith
Rated V
Applied Following Surge.
R
(DC) = 0.18 K/W
RRM
2800
2600
2400
2200
2000
1800
1600
1400
1200
I
n
i
t
ial T
= 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
Conduction Period
30°
50
60°
90°
80
120°
VSK.136.. Series
Per Junction
180°
150
DC
70
0
100
200
250
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
300
250
200
150
100
50
3500
Maximum Non Repetitive Surge Current
180
120
90
Ve
r
sus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
3000
2500
2000
1500
1000
I
n
i
tial T
= 125°C
J
60
No Vo
l
tage Reappl
i
e
d
30
Rated V
Reapplied
RRM
RMS Limit
Conduction Angle
VSK.136.. Series
Per Junction
VSK.136.. Series
Per Junction
T
= 125°C
J
0
0
30
60
90
120
150
0.01
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 – On-State Power Loss Characteristics
Fig. 6 – Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 94513
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
450
0
R
.
0
0
8
.
0
K
400
4
/
W
180
120
90
K
/
W
0.01
350
300
250
200
150
100
50
K
/
60
W
30
–
Δ
Conduct
i
o n
A
ngle
0
.
4
R
K
/
W
VSK.136.. Series
Per Module
T
= 12
5
°C
J
0
0
0
0
50
100
150
200
250
3
00
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 – On-State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
t
h
S
A
180
(Sine)
180
(Rect)
0
.
3
5
K
/
W
2 x VSK.136.. Series
Single Phase Bridge
Connected
0
.
6 K
/
W
T
=
1
2
5
°C
J
55
110
165
220
2
7
5
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 – On-State Power Loss Characteristics
1500
1200
900
600
300
0
120
(Rect)
0
.
1
K
/
W
3 x VSK.136.. Series
Three Phase Bridge
C
o
nnected
0
1
.
4
K
/
W
K
/
W
T
=
1
2
5
°C
J
100
200
300
400
25
50
75
100
125
M
a
xim um
Allowable Am
bient Tem
perature
(
°C)
Total O
utput Current (A)
Fig. 9 – On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 94513
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
130
120
110
100
90
350
DC
180
120
90
VSK.142.. Series
thJC
R
(DC) = 0.18 K/W
300
250
200
150
100
50
60
30
Conduct
i
o
n Angle
RMS Lim
it
30
Conduct
i
o
n Per
i
o
d
60
90
VSK.142.. Series
Per Junction
80
120
180
120
T
=
1
2
5
°C
J
70
0
0
30
60
90
150
0
50
100
150
200
250
Average Forward Current (A)
Average On-state Current (A)
Fig. 10 – Current Ratings Characteristics
Fig. 13 – On-State Power Loss Characteristics
130
4500
VSK.142.. Series
(
D
C) = 0.18 K/W
A t
A ny
Rated Load Condit
i
o
n And W
ith
Rated V
App
l
ied Following Surge.
I
n
i
tial T
= 125°C
R
thJC
RRM
120
110
100
90
J
4000
3500
3000
2500
2000
1500
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduct
i
o
n Period
30
60
90
120
80
180
VSK.142.. Series
Per Junct
i
o
n
DC
200
70
0
50
100
150
250
1
10
100
Number Of Equa
l Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 11 – Current Ratings Characteristics
Fig. 14 – Maximum Non-Repetitive Surge Current
250
5000
Maximum Non Repetitive Surge Current
180
120
90
Ve
r
sus Pulse Train Duration. Control
4500
4000
3500
3000
2500
2000
1500
O f
C
onduction May Not Be Ma
i
n
tained.
200
150
100
50
I
n
i
tial T
= 125°C
J
60
No Vo
l
t
age Reapp
l
ied
Rated
V
R
RM
R
eapp
l
i
e
d
30
RMS Limit
Conduction Angle
VSK.142.. Series
Per Junction
VSK.142.. Series
Per Junction
T =
1
2
5
°C
J
0
0
30
60
90
120
150
0.01
0.1
1
Average On-state Current (A)
Pu
l
se Train
D
urat
i
o
n (s)
Fig. 12 – On-State Power Loss Characteristics
Fig. 15 – Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 94513
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
400
0
0
.
1
.
1
2
t
6
h
K
S
K
/
A
/
W
180
120
90
W
0
.
2
5
300
200
100
0
K
/
W
60
30
0
.
6
K
/
W
C
o
nduct
i
o n
A n
g
le
1
K
/
W
VSK.142.. Series
Per Modu
l
e
T
= 12
5
°C
J
0
50
100
150
200
250
300
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 – On-State Power Loss Characteristics
1000
800
600
400
200
0
0
.
0
4
K
/
0
W
.
0
8
K
/
W
180
(Sine)
180
0
.
1
6
K
/
W
(Rect)
2 x VSK.142.. Series
Single Phase Bridge
C
o
nnected
T
=
1
2
5
°C
J
0
100
200
300
25
50
75
100
125
Total O
utput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 – On-State Power Loss Characteristics
1600
1200
800
400
0
R
=
0
.
0
2
K
120
/
W
(Rect)
–
Δ
R
3 x VSK.142.. Series
Three Phase Bridge
Connected
T
=
1
2
5
°C
J
0
50 100
150 200 250 300 350 400 4
5
0
Total Output Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 18 – On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 94513
7
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
130
120
110
100
90
400
VSK.162.. Series
DC
R
(DC) = 0.16 K/W
thJC
350
300
250
200
150
100
50
180
120
90
60
30
Conduction Angle
RMS Limit
30
Conduction Period
60
VSK.162.. Series
Per Junction
90
80
120
120
T
=
1
2
5
°C
180
150
J
0
70
0
30
60
90
180
0
30 60 90
120 150 180 210 240 270
Average On-state Current (A)
Average Forw
ard Current (A)
Fig. 19 – Current Ratings Characteristics
Fig. 22 – On-State Power Loss Characteristics
130
4500
VSK.162.. Series
(DC )
= 0.16 K/W
At A
ny Rated Load Cond
i
tion And W
ith
Rated V
Applied Following Surge.
R
RRM
thJC
120
110
100
90
I
n
i
tial T
= 125°C
4000
3500
3000
2500
2000
1500
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
30
60
80
90
120
150
70
VSK.162.. Series
Per Junct
i
o
n
180
DC
60
0
50
100
200
250
300
1
10
100
Num ber
O f
Equa l
Am plitud e
Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 20 – Current Ratings Characteristics
Fig. 23 – Maximum Non-Repetitive Surge Current
400
5000
Maximum Non Repetitive Surge Current
VSK.162.. Series
Per Junction
Ve
r
sus Pulse Train Duration. Control
350
300
250
200
150
100
50
4500
4000
3500
3000
2500
2000
1500
O f
C
onduction May Not Be Ma
i
n
tained.
T
=
1
2
5
°C
J
I
n
i
tial T
= 125°C
J
No Vo
l
t
age Reapplied
180
120
90
60
30
Rated V
Reapplied
RRM
RMS Limit
VSK.162.. Series
Per Junction
Conduction Angle
0
0
20 40 60 80
100 120 140 160 180
Average On-state Current (A)
0.01
0.1
Pu
l
se Train
D
urat
i
o
n (s)
1
Fig. 21 – On-State Power Loss Characteristics
Fig. 24 – Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 94513
8
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
600
R
t
h
S
A
180
500
=
120
90
0
.
0
2
K
/
60
400
300
200
100
0
W
–
30
Δ
R
Conduct
i
o n
A
ngle
0
.
2
K
/
W
VSK.162.. Series
Per Module
T
= 12
5
°C
J
0
100
200
300
40
0
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 25 – On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
0
.
0
t
8
h
K
S
/
A
W
180
(Sine)
180
(Rect)
0
.
3
K
/
W
2 x VSK.162.. Series
Single Phase Bridge
Connected
0
.
6
K
/
W
T
=
1
2
5
°C
J
25
50
75
100
125
0
50
100
150
200
250
300
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 26 – On-State Power Loss Characteristics
1500
1250
1000
750
500
250
0
0
.
0
4
K
/
W
0
.
0
8
K
/
W
120
(Rect)
3 x VSK.162.. Series
0
.
3
K
/
W
Three Phase Bridge
Connected
0
.
6
K
/
W
T
J
= 12
5
°C
0
50 100
150 200 250 300 350 400
4
5
0
25
50
75
100
125
M
a
xim um
Allowable Am
bient Tem
perature
(
°C)
Total Output Current (A)
Fig. 27 – On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 94513
9
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
10000
1000
100
10
1
Steady State Value
(DC Operation)
T =
25˚C
0.1
0.01
J
T =
125˚C
J
VSK.136.. Series
Per Junction
VSK.136.. Series
1
0.001
0
1
2
3
4
5
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Instantaneous On-state Voltage (V)
Fig. 28 – On-State Voltage Drop Characteristics
Fig. 31 – Thermal Impedance Z
thJC
Characteristics
1
10000
1000
Steady State Value
(DC Operation)
T =
25˚C
J
T =
125˚C
J
100
10
0.1
VSK.142.. Series
Per Junction
VSK.142.. Series
1
0.01
0.01
0
1
2
3
4
5
0.1
1
10
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 29 – On-State Voltage Drop Characteristics
Fig. 32 – Thermal Impedance Z
thJC
Characteristics
1
10000
1000
Steady State Value
(DC Operation)
T =
25˚C
J
T =
125˚C
J
0.1
100
10
VSK.162.. Series
Per Junction
VSK.162.. Series
1
0.01
0.01
0
1
2
3
4
5
0.1
1
10
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 30 – On-State Voltage Drop Characteristics
Fig. 33 – Thermal Impedance Z
thJC
Characteristics
Revision: 27-Jul-2018
Document Number: 94513
10
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
100
Rectangular gate p
ulse
(1) PGM = 200 W
, tp = 300 s
a)Recomm ended
l
o
a d
line for
(2) PGM = 60 W
, tp = 1 m
s
r
a
ted dI/dt: 20 V, 20
W
(3) PGM = 30 W
, tp = 2 m
s
(4) PGM = 12 W
, tp = 5 m
s
tr = 0.5 s, tp >= 6 s
b)Recomm ended
loa d
line for
<= 30% ra
ted d
I/dt: 15 V, 40
W
tr = 1 s, tp >= 6 s
10
1
(a)
(
b
)
(4)
(3) (2)
(1)
VG D
IG D
Frequency Lim
ited by PG(AV
)
10 100
VSK.136..142..162.. Series
0.1
0.1
0.001
0.01
1
1000
Instantaneous Gate Current (A)
Fig. 34 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KT
162 16 PbF
1
2
3
4
5
1
2
3
4
5
–
–
–
–
Vishay Semiconductors product
Circuit configuration
Current rating: I
T(AV)
Voltage code x 100 = V
RRM
–
PbF = Lead (Pb)-free
Note
•
Revision: 27-Jul-2018
Document Number: 94513
11
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.136..Pb
F
,
V
S-VSK.142..Pb
F
,
V
S-VSK.162..PbF Series
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
CONFIGURATION CODE
~
VSKT…
+
Two SCRs doubler circuit
T
+
–
–
K1 K2
G1 G2
~
VSKH…
+
SCR/diode doubler circuit, positive control
H
+
–
–
K1
G1
~
VSKL…
+
SCR/diode doubler circuit, negative control
L
+
–
–
K2
G2
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Jul-2018
Document Number: 94513
12
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
DIMENSIONS
in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
17 (0.67)
23 (0.91)
23 (0.91)
5 (0.20)
1
2
3
66 (2.60)
94 (3.70)
37 (1.44)
3 screws M6 x 10
Document Number: 95067
Revision: 15-Feb-08
1
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Revision: 01-Jan-2023
Document Number: 91000
1
