Vishay-Intertech-VS-VSKL250-14PBF
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VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A, 250 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
MAGN-A-
P
A
K
• Material
categorization: for definitions of compliance
DESCRIPTION
PRIMARY CHARACTERISTICS
This VSK series of MAGN-A-PAK modules uses high voltage
power thyristor/thyristor and thyristor/diode in seven
basic
configurations. The semiconductors are electrically isolated
from the metal base, allowing common heatsinks and
compact assemblies to be built. They can be interconnected
to form single phase or three phase bridges or as
AC-switches when modules are connected in anti-parallel
mode. These modules are intended for general purpose
applications such as battery chargers, welders, motor
drives, UPS, etc.
I
T(AV)
170 A, 250 A
Modules – thyristor, standard
MAGN-A-PAK
Type
Package
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.170..
170
VSK.250..
250
UNITS
I
T(AV)
85 °C
I
T(RMS)
377
555
A
50 Hz
60 Hz
50 Hz
60 Hz
5100
8500
I
TSM
5350
8900
131
361
I
2
t
kA
2
s
119
330
I
2
t
1310
3610
kA
2
s
V
V
DRM
/V
RRM
400 to 1600
400 to 2000
T
J
Range
-40 to +130
°C
Revision: 12-Nov-2018
Document Number: 94417
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM
I
RRM
/I
DRM
VOLTAGE
CODE
PEAK REVERSE AND OFF-STATE
NON-REPETITIVE PEAK
AT 130 °C
MAXIMUM
mA
TYPE NUMBER
BLOCKING VOLTAGE
V
REVERSE VOLTAGE
V
04
08
10
12
14
16
04
08
10
12
14
16
18
20
400
800
500
900
1000
1200
1400
1600
400
1100
1300
1500
1700
500
VS-VSK.170-
50
800
900
1000
1200
1400
1600
1800
2000
1100
1300
1500
1700
1900
2100
50
60
VS-VSK.250-
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250 UNITS
170
85
250
85
A
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
°C
Maximum RMS on-state current
I
T(RMS)
As AC switch
377
555
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5100
5350
4300
4500
131
8500
8900
7150
7500
361
No voltage
reapplied
A
Maximum peak, one-cycle on-state
non-repetitive, surge current
I
TSM
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
No voltage
reapplied
119
330
Maximum I
2
t for fusing
I
2
t
kA
2
s
92.5
84.4
1310
255
100 % V
RRM
reapplied
233
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 ms to 10 ms, no voltage reapplied
3610
kA
2
s
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
0.89
1.12
1.34
0.96
1.60
500
0.97
1.00
0.60
0.57
1.44
500
V
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
m
V
r
t2
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
TM
=
x I
T(AV)
, T
J
= T
J
maximum, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
V
TM
I
H
2
)
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C
mA
Anode supply = 12 V, resistive load = 1
,
gate pulse: 10 V, 100 μs, T
J
= 25 °C
Maximum latching current
I
L
1000
1000
Revision: 12-Nov-2018
Document Number: 94417
2
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,
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,
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VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250
UNITS
Typical delay time
Typical rise time
t
d
t
r
1.0
2.0
T
J
= 25 °C, gate current = 1 A dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
μs
I
TM
= 300 A; dI/dt = 15 A/μs; T
J
= T
J
Typical turn-off time
t
q
maximum;
50 to 150
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250
UNITS
Maximum peak reverse and
off-state leakage current
I
RRM,
I
DRM
T
J
= T
J
maximum
50
60
mA
50 Hz, circuit to base, all terminals shorted,
25 °C, 1 s
RMS insulation voltage
V
INS
3000
1000
V
T
J
= T
J
maximum, exponential to 67 %
rated V
DRM
Critical rate of rise of off-state voltage
dV/dt
V/μs
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
t
p
5 ms, T
J
= T
J
maximum
t
p
5 ms, T
J
= T
J
maximum
T
J
= -40 °C
VSK.170 VSK.250
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10.0
2.0
W
A
P
G(AV)
+ I
GM
3.0
– V
GT
5.0
4.0
V
Anode supply = 12 V,
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
V
GT
T
J
= 25 °C
3.0
resistive load; Ra = 1
T
J
= T
J
maximum
T
J
= -40 °C
2.0
350
200
100
0.25
10.0
Anode supply = 12 V,
resistive load; Ra = 1
I
GT
T
J
= 25 °C
mA
T
J
= T
J
maximum
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
V
GD
I
GD
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, rated V
DRM
applied
V
mA
T
J
= T
J
maximum, I
TM
= 400 A,
rated V
DRM
applied
Maximum rate of rise of turned-on current
dI/dt
500
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170 VSK.250
UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
-40 to +130
°C
Maximum thermal resistance,
junction to case per junction
R
thJC
R
thCS
DC operation
0.17
0.02
0.125
0.02
K/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
MAGN-A-PAK to heatsink
busbar to MAGN-A-PAK
Mounting
torque
10 %
4 to 6
500
g
Approximate weight
Case style
17.8
oz.
MAGN-A-PAK
Revision: 12-Nov-2018
Document Number: 94417
3
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,
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VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
DEVICES
UNITS
180°
0.009
0.009
120°
0.010
0.010
90°
60°
30°
180°
0.007
0.007
120°
0.011
0.011
90°
60°
30°
VSK.170-
VSK.250-
0.010
0.014
0.020
0.020
0.032
0.032
0.015
0.015
0.020
0.020
0.033
0.033
K/W
Note
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
•
130
120
110
100
90
300
250
200
150
100
50
VSK.170.. series
180°
120°
90°
R
thJC
(DC) = 0.17 K/W
60°
30°
Conduction Angle
RMS limit
Conduction angle
30°
80
60°
90°
VSK.170.. series
per junction
T
J
= 125° C
120°
180°
70
60
0
0
40
80
120
160
200
0
40
80
120
160
200
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 3 – On-State Power Loss Characteristics
130
120
110
100
90
350
DC
VSK.170.. series
R
thJC
(DC) = 0.17 K/W
180°
300
120°
90°
250
200
150
100
50
60°
30°
Conduction Period
RMS limit
30°
60°
90°
120°
Conduction period
80
VSK.170.. series
per junction
T
J
= 125°C
70
180°
DC
60
0
0
50
100
150 200
250
300
0
50
100 150 200 250 300
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 4 – On-State Power Loss Characteristics
Revision: 12-Nov-2018
Document Number: 94417
4
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,
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,
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VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
5000
4500
4000
3500
3000
2500
2000
5000
Maximum non-repetitive surge current
At any rated load condition and with
rated V
RRM
applied following surge.
vs. pulse train duration. Control of
conduction may not be maintained
.
Initial T
J
= 130 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4500
4000
3500
3000
2500
2000
Initial T
J
= 130 °C
No voltage reapplied
Rated V
RRM
reapplied
VSK.170.. series
per junction
VSK.170.. series
per junction
0.01
0.1
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
400
0
0
.
180°
1
.
2
6
t
h
K
0
5
K
/
S
A
/
.
120°
2
W
350
W
5
K
90°
/
0
W
.
3
K
60°
/
W
300
30°
0
.
3
250
K
/
W
200
150
100
50
Conduction angle
VSK.170.. series
per module
T
J
= 130 °C
0
0
50 100
150 200 250 300 350
Total RMS Output Current (A)
4
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 – On-State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
.
0
8
0
K
/
.
1
W
K
/
W
0
.1
2
K
180°
(sine)
180°
/
W
0
.
1
6
K
/
W
(rect.)
0
.
3
5
K
/
W
2 x VSK.170.. series
single phase bridge
connected
T
J
= 130 °C
0
50 100
150 200 250 300
Total Output Current (A)
3
50
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 8 – On-State Power Loss Characteristics
Revision: 12-Nov-2018
Document Number: 94417
5
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,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
1600
1400
1200
1000
800
600
400
200
0
120°
0
.
1
(Rect)
K
/
W
W
0
.
1
2
K
/
0
.
2
5
3 x VSK.170.. series
three phase bridge
connected
K
/
W
T
J
= 130 °C
0
100
200
300
400
5
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 9 – On-State Power Loss Characteristics
130
120
110
100
90
350
VSK.250.. series
180°
120°
90°
R
thJC
(DC) = 0.125 K/W
300
250
200
150
100
50
60°
30°
Conduction angle
RMS limit
30°
100
Conduction Angle
60°
80
90°
VSK.250.. series
per junction
120°
200
70
180°
250
T
= 130 °C
J
60
0
0
50
150
300
0
50
100
150
200
250
Average On-state Current (A)
Average On-state Current (A)
Fig. 10 – Current Ratings Characteristics
Fig. 12 – On-State Power Loss Characteristics
130
500
VSK.250.. Series
DC
180°
120°
90°
60°
30°
450
R
thJC
(DC) = 0.125 K/W
120
110
100
90
400
350
300
250
200
150
100
50
Conduction period
RMS limit
30°
100
60°
90°
120°
180°
Conduction period
80
VSK.250.. series
per junction
T
J
= 130 °C
70
DC
60
0
0
200
300
400
500
0
50 100
150 200 250 300 350 400
Average On-state Current (A)
Average On-state Current (A)
Fig. 11 – Current Ratings Characteristics
Fig. 13 – On-State Power Loss Characteristics
Revision: 12-Nov-2018
Document Number: 94417
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
7500
7000
6500
6000
5500
5000
4500
9000
At any rated load condition and with
rated V
RRM
applied following surge.
Maximum non-repetitive surge Current
vs. pulse train duration. Control of
Initial
T
J
= 130 °C
conduction may not be maintained.
Initial T
J
= 130 °C
8000
7000
6000
5000
4000
3000
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No voltage reapplied
Rated V
RRM
reapplied
4000
VSK.250.. series
per junction
3500
VSK.250.. series
per junction
1
10
100
0.01
0.1
Pulse Train Duration (s)
Fig. 15 – Maximum Non-Repetitive Surge Current
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 14 – Maximum Non-Repetitive Surge Current
700
0
.
1
2
180°
K
/
600
W
120°
0
.
1
6
90°
60°
30°
K
/
W
500
400
300
200
100
0
Conduction angle
0
2
5
.
K
/
W
0
.
3
K
/
W
VSK.250.. series
per module
T
J
= 130 °C
0
100
200 300 400 500
6
00
20
40
60
80
100
120
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 – On-State Power Loss Characteristics
1400
1200
1000
800
600
400
200
0
0
.
0
4
K
/
W
0
.
0
6
K
/
W
180°
(sine)
180°
(rect.)
0
.
1
2
K
/
W
0
.
1
6
K
/
W
2 x VSK.250.. series
single phase bridge
connected
T
J
= 130 °C
0
100
200
300
400
5
0
0
20
40
60
80
100
120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 – On-State Power Loss Characteristics
Revision: 12-Nov-2018
Document Number: 94417
7
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,
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VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
2000
1800
1600
1400
1200
1000
800
0
0
.
0
.
5
0
3
K
/
K
W
/
W
0
.
0
6
K
/
W
W
120°
0
.
1
(Rect)
K
/
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
.
2
0
K
/
600
W
3 x VSK.250.. series
three phase bridge
connected
0
2
5
K
/
400
W
T
J
= 130 °C
200
0
0
100 200 300 400 500 600
Total Output Current (A)
7
00
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 18 – On-State Power Loss Characteristics
1800
10 000
1000
100
VSK.170.. series
T
J
= 130 °C
per junction
I
TM
= 800 A
500 A
1600
1400
1200
1000
800
T
J
= 25 °C
T
J
= 130 °C
300 A
200 A
100 A
50 A
600
VSK.170 series
per junction
400
200
0
10 20 30 40 50 60 70 80 90
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous Forward Voltage (V)
Rate Of Fall Of On-state Current – di/dt (A/µs)
Fig. 19 – On-State Voltage Drop Characteristics
Fig. 21 – Reverse Recovery Charge Characteristics
2400
10 000
VSK.250.. series
I
TM
= 800 A
2200
T =
1
3
0 °
C
J
per junction
500 A
300 A
200 A
2000
1800
1600
1400
1200
1000
800
T
J
= 25 °C
T
J
= 130 °C
100 A
1000
50 A
600
VSK.250 series
per junction
400
200
100
0
10 20 30 40 50 60 70 80 90
100
0.5
1
1.5
2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous Forward Voltage (V)
Rate Of Fall Of On-state Current – di/dt (A/µs)
Fig. 20 – On-State Voltage Drop Characteristics
Fig. 22 – Reverse Recovery Charge Characteristics
Revision: 12-Nov-2018
Document Number: 94417
8
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,
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,
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VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
100
(1) PGM = 10
W, tp = 4
ms
(2) PGM = 20
W, tp = 2
ms
(3) PGM = 40
W, tp = 1
ms
(4) PGM = 60
W, tp = 0.66 ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20 V, 10
Ω
; tr < = 1 µs
b) Recommended load line for
≤
tr
30 % rated di/dt : 10 V, 20
Ω
1 µs
≤
10
1
(a)
(b)
(1)
(2) (3)
(4)
VGD
IGD
0.01
VSK.170/250 series
Frequency limited by PG(AV)
0.1
0.001
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 23 – Gate Characteristics
1
0.1
Steady state value:
R
thJC
= 0.17 K/W
R
thJC
= 0.125 K/W
VSK.170.. series
(DC Operation)
VSK.250.. series
0.01
0.001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 24 – Thermal Impedance Z
thJC
Characteristics
1
10
100
ORDERING INFORMATION TABLE
Device code
VS-VS KT
250
–
20
PbF
1
2
3
4
5
–
–
–
–
–
Vishay Semiconductors product
1
2
3
4
5
Circuit configuration (see dimensions – link at the end of datasheet)
Current rating
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
• None = standard production
• PbF = lead (Pb)-free
Note
•
Revision: 12-Nov-2018
Document Number: 94417
9
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSK.170Pb
F
,
V
S-VSK.250PbF Series
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
~
~
+
+
–
VSKT…
Two SCRs doubler circuit
KT
–
K
1
G
1 G2K2
Available up to 2000 V, contact factory for different requirement
~
~
+
+
–
SCR/diode doubler circuit, positive control
KH
KL
KU
VSKH…
–
K1G1
Available up to 2000 V, contact factory for different requirement
~
~
+
+
–
SCR/diode doubler circuit, negative control
VSKL…
–
Available up to 2000 V, contact factory for different requirement
+
+
–
–
–
VSKU…
Two SCRs common cathodes
–
K1G1 G2
K2
Available up to 1200 V, contact factory for different requirement
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 12-Nov-2018
Document Number: 94417
10
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS
in millimeters (inches)
Ø 5.5
35 (1.38)
28 (1.12)
3 screws M8 x 1.25
80 (3.15)
9 (0.35)
6 (0.24)
115 (4.53)
HEX 13
92 (3.62)
Notes
• Dimensions
are nominal
• Full
engineering drawings are available on request
• UL
identification number for gate and cathode wire: UL 1385
• UL
identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
1
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Revision: 01-Jan-2023
Document Number: 91000
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