Vishay-Intertech-VS-VSKN105-06
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VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
ADD-A-
P
A
K
BENEFITS
• Excellent thermal performances obtained by the usage of
PRIMARY CHARACTERISTICS
exposed direct bonded copper substrate
I
T(AV)
or I
F(AV)
105 A
• Up to 1600 V
Type
Modules – thyristor, standard
AAP Gen 7 (TO-240AA)
• High surge capability
Package
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
ELECTRICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of APP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
105
UNITS
I
T(AV)
or I
F(AV)
85 °C
I
O(RMS)
As AC switch
50 Hz
235
A
2000
I
TSM,
I
FSM
60 Hz
2094
50 Hz
20
I
2
t
kA
2
s
60 Hz
18.26
I
2
t
200
kA
2
s
V
DRM
/V
RRM
Range
400 to 1600
-40 to +130
-40 to +130
V
T
Stg
T
J
°C
Revision: 26-Jul-2018
Document Number: 94628
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
V
DRM
, MAXIMUM REPETITIVE
I
RRM,
I
DRM
VOLTAGE
TYPE NUMBER
CODE
NON-REPETITIVE PEAK
PEAK OFF-STATE VOLTAGE,
AT 130 °C
mA
REVERSE VOLTAGE
V
GATE OPEN CIRCUIT
V
04
06
08
400
600
500
700
400
600
800
900
800
VS-VSK.105
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
20
ON-STATE CONDUCTION
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave,
C
= 85 °C
VALUES
UNITS
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
105
T
I
F(AV)
Maximum continuous RMS on-state current,
as AC switch
or
I
O(RMS)
235
I
(RMS)
I
(RMS)
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
2000
2094
1682
1760
20
No voltage
reapplied
I
TSM
or
I
FSM
Sinusoidal
half wave,
initial T
J
= T
J
maximum
Maximum peak, one-cycle non-repetitive
on-state or forward current
100 % V
RRM
reapplied
No voltage
reapplied
18.26
14.14
12.91
Maximum I
2
t for fusing
I
2
t
Initial T
J
= T
J
maximum
kA
2
s
100 % V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
Maximum I
2
t for fusing
I
2
t
(1)
200
kA
2
s
Low level
(3)
0.98
1.12
2.7
(2)
Maximum value or threshold voltage
V
T(TO)
T
J
= T
J
maximum
V
High level
(4)
Low level
(3)
Maximum value of on-state
slope resistance
(2)
r
t
T
J
= T
J
maximum
m
High level
(4)
2.34
V
TM
V
FM
I
TM
=
x I
T(AV)
T
J
= 25 °C
Maximum peak on-state or forward voltage
1.8
V
I
FM
=
x I
F(AV)
Maximum non-repetitive rate of rise of
turned on current
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
dI/dt
150
A/μs
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
I
H
I
L
250
400
mA
T
J
= 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(2)
(3)
(4)
I
2
t for time t
x
= I
2
t x
t
x
Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
16.7 % x
x I
AV
< I <
x I
AV
I >
x I
AV
2
)
Revision: 26-Jul-2018
Document Number: 94628
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
VALUES
12
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
P
G(AV)
I
GM
3
3
– V
GM
10
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
4.0
2.5
1.7
270
150
80
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
V
GT
Anode supply = 6 V
resistive load
I
GT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
V
GD
I
GD
T
J
= 125 °C, rated V
DRM
applied
T
J
= 125 °C, rated V
DRM
applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 130 °C, gate open circuit
20
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
V
INS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
T
J
= 130 °C, linear to 0.67 V
DRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating temperature range
Storage temperature range
T
J
-40 to +130
°C
T
Stg
Maximum internal thermal resistance,
junction to case per leg
R
thJC
R
thCS
DC operation
0.22
°C/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
0.1
4
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound.
to heatsink
busbar
Mounting torque
10 %
3
75
g
Approximate weight
Case style
2.7
oz.
JEDEC
®
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
°C/W
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.105..
0.04
0.048
0.063
0.085
0.125
0.033
0.052
0.067
0.088
0.127
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94628
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
130
120
110
100
90
260
RthJC (DC) = 0.22°C/W
180°
120°
90°
240
220
200
180
160
140
120
100
80
60°
30°
DC
RMS limit
180°
120°
90°
60
40
20
80
60°
Per leg,
Tj = 130°C
30°
70
0
0
20
40
60
80
100 120
0
20 40 60 80
100 120 140 160 180
Average on-state current (A)
Average on-state current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – On-State Power Loss Characteristics
130
120
110
100
90
1800
RthJC (DC) = 0.22°C/W
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60
Hz 0.0083 s
@ 50 Hz 0.0100s
1600
1400
1200
1000
800
DC
180°
120°
90°
60°
30°
80
Per leg
70
0
20 40 60 80
100 120 140 160 180
Average on-state current (A)
1
10
100
Number of equal amplitude half cycle current pulses (N)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
200
180
160
140
120
100
80
2000
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 130°C
1800
1600
1400
1200
1000
800
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
60
40
Per leg
20
Per leg, Tj = 130°C
0
0.01
0.1
1
0
20
Average on-state current (A)
Fig. 3 – On-State Power Loss Characteristics
40
60
80
100 120
Pulse train duration (s)
Fig. 6 – Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94628
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
400
RthSA = 0.1 °C/W
0.2 °C/W
350
300
250
200
150
100
50
180°
120°
90°
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
60°
30°
2°C/W
VSK.105 Series
Per module
Tj = 130°C
0
0
0
0
40
80
120 160 200 2
4
0
0 20
40 60 80
100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 7 – On-State Power Loss Characteristics
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
180°
(sine)
180°
(rect)
2 °C/W
∼
2 x VSK.105 Series
single phase bridge connected
Tj = 130°C
40
80
120
160
2
0
00
20 40 60 80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 – On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
120°
(rect)
3 x VSK.105 Series
three phase bridge connected
Tj = 130°C
40
80
120 160 200 240
0
20 40 60 80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 9 – On-State Power Loss Characteristics
Revision: 26-Jul-2018
Document Number: 94628
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
1000
Per leg
100
10
Tj = 130°C
Tj = 25°C
1
0.5
1.0
Instantaneous on-state voltage (V)
Fig. 10 – On-State Voltage Drop Characteristics
1.5
2.0
2.5
3.0
3.5
1
0.1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
0.01
Per leg
0.001
0.001
0.01
0.1
Square wave pulse duration (s)
Fig. 11 – Thermal Impedance Z
thJC
Characteristics
1
10
100
10
1
R
e
ctangular gate pu
l
se
(1)
P
G
M = 200 W, tp = 300 µs
a)
R
e
commended load line for
r
a
ted di/dt:
2
0 V, 2
0
o
hms
tr =
0
.5 µ
s
,
t
p
>
= 6 µs
(2)
P
G
M = 60 W, tp = 1 ms
(3)
P
G
M = 30 W, tp = 2 ms
(4)
P
G
M = 12 W, tp = 5 ms
b)
R
e
commended load line for
<= 30
%
r
a
ted di
/
dt:
1
5 V, 40 ohms
tr = 1 µ
s
,
t
p >= 6 µs
(
a
)
(b)
(
3
)
(4)
(
2
)
(1)
VGD
I
G
D
0.01
F
r
equen
c
y
L
i
m
ited by
P
G
(AV)
10 100
1000
V
S
K
.
105..
S
e
r
i
e
s
0.1
0.001
0.1
1
Instantaneous gate current (A)
Fig. 12 – Gate Characteristics
Revision: 26-Jul-2018
Document Number: 94628
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-VS
K
T
105
/
16
2
3
4
5
1
1
2
3
4
5
–
Vishay Semiconductors product
Module type
–
–
–
–
Circuit configuration (see Circuit Configuration table)
Current code (105 A)
Voltage code (see Voltage Ratings table)
Note
•
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
(1)
~
1
VSKT
+
2
(2)
Two SCRs doubler circuit
T
3
4
5
7
6
–
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
(1)
~
1
VSKH
+
2
3
SCR/diode doubler circuit,
positive control
(2)
H
4
5
–
(3)
G1 K1
(4) (5)
(1)
~
1
VSKL
+
2
SCR/diode doubler circuit,
negative control
(2)
L
3
6
7
–
(3)
K2 G2
(7) (6)
(1)
–
1
VSKN
+
2
3
(2)
SCR/diode common anodes
N
4
5
+
(3)
G1 K1
(4) (5)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 26-Jul-2018
Document Number: 94628
7
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII – Thyristor
DIMENSIONS
in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3
(3.15 0.01ꢀꢁ
15 0.5
(0.59 0.0ꢀ0ꢁ
ꢀ0 0.5
(0.79 0.0ꢀ0ꢁ
ꢀ0 0.5
(0.79 0.0ꢀ0ꢁ
9ꢀ 0.75
(3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
1
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Revision: 01-Jan-2023
Document Number: 91000
1
