Vishay-Intertech-VS-VSKN26-16
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VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
ADD-A-
P
A
K
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
I
T(AV)
or I
F(AV)
27 A
• Up to 1600 V
Type
Modules – thyristor, standard
AAP Gen 7 (TO-240AA)
• High surge capability
Package
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
ELECTRICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of APP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
27
UNITS
I
T(AV)
or I
F(AV)
85 °C
I
O(RMS)
As AC switch
50 Hz
60
A
400
I
TSM,
I
FSM
60 Hz
420
50 Hz
800
I
2
t
kA
2
s
60 Hz
730
I
2
t
V
RRM
T
Stg
T
J
8000
kA
2
s
V
Range
400 to 1600
-40 to +125
-40 to +125
°C
°C
Revision: 26-Jul-2018
Document Number: 94629
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
V
DRM
, MAXIMUM REPETITIVE
I
RRM,
I
DRM
VOLTAGE
TYPE NUMBER
CODE
NON-REPETITIVE PEAK
PEAK OFF-STATE VOLTAGE,
AT 125 °C
mA
REVERSE VOLTAGE
V
GATE OPEN CIRCUIT
V
04
06
08
400
600
500
700
400
600
800
900
800
VS-VSK.26
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave,
C
= 85 °C
VALUES
UNITS
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
27
60
T
I
F(AV)
Maximum continuous RMS on-state current,
as AC switch
or
I
O(RMS)
I
(RMS)
I
(RMS)
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
335
350
800
730
560
510
No voltage
reapplied
I
TSM
or
I
FSM
Sinusoidal
half wave,
initial T
J
= T
J
maximum
Maximum peak, one-cycle non-repetitive
on-state or forward current
100 % V
RRM
reapplied
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
Initial T
J
= T
J
maximum
A
2
s
100 % V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
Maximum I
2
t for fusing
I
2
t
(1)
8000
A
2
s
Low level
(3)
0.86
1.09
9.58
7.31
(2)
Maximum value or threshold voltage
V
T(TO)
T
J
= T
J
maximum
V
High level
(4)
Low level
(3)
Maximum value of on-state
slope resistance
(2)
r
t
T
J
= T
J
maximum
m
High level
(4)
V
TM
V
FM
I
TM
=
x I
T(AV)
T
J
= 25 °C
Maximum peak on-state or forward voltage
1.65
150
V
I
FM
=
x I
F(AV)
Maximum non-repetitive rate of rise of
turned on current
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
dI/dt
A/μs
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
I
H
I
L
200
400
mA
T
J
= 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(2)
(3)
(4)
I
2
t for time t
x
= I
2
t x
t
x
Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
16.7 % x
x I
AV
< I <
x I
AV
2
)
I >
x I
AV
Revision: 26-Jul-2018
Document Number: 94629
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
VALUES
10
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
P
G(AV)
I
GM
2.5
2.5
-V
GM
10
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
T
J
= 25 °C
T
J
= 125 °C
4.0
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
V
GT
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
I
GT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
V
GD
I
GD
T
J
= 125 °C, rated V
DRM
applied
T
J
= 125 °C, rated V
DRM
applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 125 °C, gate open circuit
15
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
V
INS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
T
J
= 125 °C, linear to 0.67 V
DRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
-40 to +125
°C
Maximum internal thermal resistance,
junction to case per leg
R
thJC
R
thCS
DC operation
0.76
0.1
°C/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
busbar
4
3
Mounting torque
10 %
75
g
Approximate weight
Case style
2.7
oz.
JEDEC
®
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.26..
0.212
0.258
0.330
0.466
0.72
0.166
0.276
0.357
0.482
0.726
°C/W
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94629
3
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
Vishay Semiconductors
130
120
110
100
90
60
RthJC (DC) = 0.76°C/W
180°
120°
90°
50
40
30
20
10
0
60°
30°
DC
RMS limit
180°
120°
90°
60°
30°
Per leg,
Tj = 125°C
80
0
10
Average on-state current (A)
Fig. 4 – On-State Power Loss Characteristics
20
30
40
50
0
5
10
15
20
25
30
Average on-state current (A)
Fig. 1 – Current Ratings Characteristics
130
120
110
100
90
400
At any rated load condition and with
rated Vrrm applied following surge
RthJC (DC) = 0.76 °C/W
Initial Tj = Tj max
350
300
250
200
150
@ 60
Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
Per leg
80
1
10
100
0
10
20
30
40
50
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
50
40
30
20
10
0
400
180°
120°
90°
Maximum Non-repetitive Surge
Current. Control
of conduction may not be maintained.
Versus Pulse Train Duration
Initial Tj = 125°C
350
300
250
200
150
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
Per leg
Per leg, Tj = 125°C
0.01
0.1
1
0
5
10
Average on-state current (A)
Fig. 3 – On-State Power Loss Characteristics
15
20
25
30
Pulse train duration (s)
Fig. 6 – Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94629
4
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
Vishay Semiconductors
100
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
4 °C/W
8 °C/W
90
80
70
60
50
40
30
20
10
0
180°
120°
90°
60°
30°
VSK.26 Series
Per module
Tj = 125°C
0
0
0
10
20
30
40
50
60
0
20 40 60 80
100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 7 – On-State Power Loss Characteristics
250
200
150
100
50
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
180°
(sine)
180°
(rect)
8 °C/W
∼
2 x VSK.26 Series
single phase bridge connected
Tj = 125°C
0
0
60
20 40 60 80
100 120 140
10
20
30
40
50
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 – On-State Power Loss Characteristics
300
250
200
150
100
50
RthSA = 0.1 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
120°
(rect)
1.5 °C/W
3 °C/W
3 x VSK.26 Series
three phase bridge connected
Tj = 125°C
0
0
80
20 40 60 80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 9 – On-State Power Loss Characteristics
20
40
60
Total output current (A)
Revision: 26-Jul-2018
Document Number: 94629
5
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
Vishay Semiconductors
1000
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.0
1.0
Instantaneous on-state voltage (V)
Fig. 10 – On-State Voltage Drop Characteristics
2.0
3.0
4.0
5.0
6.0
10
1
Steady state value
RthJC = 0.76 °C/W
(DC operation)
0.1
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 11 – Thermal Impedance Z
thJC
Characteristics
100
R
e
ctangula
r
gate p
u
l
s
e
(1)
P
G
M = 100 W,
t
p =
5
00 µs
(2)
P
G
M = 50 W, tp = 1 ms
(3)
P
G
M = 20 W, tp = 25 ms
(4)
P
G
M = 10 W, tp = 5 ms
a
)
R
e
commended load line for
r
a
ted di/dt:
2
0 V, 30 ohms
tr =
0
.5 µ
s
,
t
p
>
= 6 µs
b
)
R
e
commended load line for
<= 30
%
r
a
ted di/dt: 2
0
V
, 6
5
o
hms
tr = 1 µ
s
,
t
p >= 6 µs
10
1
(a)
(
b
)
(3) (2)
(1)
(4)
VGD
IGD
0.01
VSK.
I
.
S
e
r
ies
F
r
equency
L
i
m
i
t
ed by
P
G
(AV)
10 100
1000
0.1
0.001
0.1
1
Instantaneous gate current (A)
Fig. 12 – Gate Characteristics
Revision: 26-Jul-2018
Document Number: 94629
6
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-VS
K
T
26
/
16
1
2
3
4
5
1
2
3
4
5
–
Vishay Semiconductors product
Module type
–
–
–
–
Circuit configuration (see Circuit Configuration table)
Current code (26 A)
Voltage code (see Voltage Ratings table)
Note
•
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
VSKT
(1)
~
1
+
2
(2)
Two SCRs doubler circuit
T
3
4
5 7
6
–
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
VSKH
(1)
~
1
+
SCR/diode doubler circuit,
positive control
2
(2)
H
3
4
5
–
(3)
G1 K1
(4) (5)
VSKL
(1)
~
1
+
SCR/diode doubler circuit,
negative control
2
(2)
L
3
6
7
–
(3)
K2 G2
(7) (6)
Revision: 26-Jul-2018
Document Number: 94629
7
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
VSKN
(1)
–
1
+
2
(2)
SCR/diode common anodes
N
3
4
5
+
(3)
G1 K1
(4) (5)
VSKU
(1)
+
1
–
2
(2)
Two SCRs common cathodes
U
3
6
4
5 7
–
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
VSKV
(1)
–
1
+
2
(2)
Two SCRs common anodes
V
3
6
4
5 7
+
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 26-Jul-2018
Document Number: 94629
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII – Thyristor
DIMENSIONS
in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3
(3.15 0.01ꢀꢁ
15 0.5
(0.59 0.0ꢀ0ꢁ
ꢀ0 0.5
(0.79 0.0ꢀ0ꢁ
ꢀ0 0.5
(0.79 0.0ꢀ0ꢁ
9ꢀ 0.75
(3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
1
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Vishay
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Revision: 01-Jan-2023
Document Number: 91000
1
