Vishay-Intertech-VS-VSKU162-12PBF
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VS-VSKU162…Pb
F
,
V
S-VSKV162…PbF Series
Vishay Semiconductors
Thyristor/Thyristor, 160 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI
2
O
3
)
• 3500 V
RMS
isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in three
basic configurations
• Simple mounting
• UL approved file E78996
• Designed and qualified for multiple level
IN
T
–
A-PAK
• Material
categorization: for definitions of compliance
PRIMARY CHARACTERISTICS
APPLICATIONS
• DC motor control and drives
• Battery charges
I
T(AV)
160 A
Type
Modules – thyristor, standard
INT-A-PAK
Package
• Welders
• Power converters
• Lighting control
• Heat and temperature control
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
160
UNITS
I
T(AV)
85 °C
I
T(RMS)
355
A
50 Hz
60 Hz
50 Hz
60 Hz
4870
I
TSM
I
2
t
5100
119
kA
2
s
108
I
2
t
V
RRM
T
J
1190
kA
2
s
V
Range
Range
1200, 1600
-40 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
V
RSM
/V
DSM
, MAXIMUM NON-REPETITIVE
I
RRM
/I
DRM
AT 125 °C
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
V
PEAK REVERSE VOLTAGE
V
12
16
1200
1600
1300
1700
VS-VSK.162
50
Revision: 27-Jul-2018
Document Number: 95901
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU162…Pb
F
,
V
S-VSKV162…PbF Series
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
VALUES
160
UNITS
A
Maximum average on-state current
at case temperature
85
°C
Maximum RMS on-state current
I
T(RMS)
355
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
4870
5100
4100
4300
119
No voltage
reapplied
Maximum peak, one-cycle
on-state, non-repetitive
surge current
A
I
TSM
10
0
%
V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
No voltage
reapplied
108
Maximum I
2
t for fusing
I
2
t
kA
2
s
84
10
0
%
V
RRM
reapplied
76.7
1190
0.8
Maximum I
2
t for fusing
I
2
t
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
V
T(TO)1
V
T(TO)2
V
0.98
Low level value on-state
slope resistance
r
t1
r
t2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
1.67
1.38
m
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
V
TM
V
FM
I
H
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
I
TM
=
x I
T(AV)
, T
J
= 25 °C, 180° conduction
Anode supply = 6 V initial I
T
= 30 A, T
J
= 25 °C
1.54
1.54
200
V
V
mA
Anode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
Maximum latching current
I
L
400
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical delay time
Typical rise time
t
gd
t
gr
1
2
Gate current = 1 A, dl
g
/dt = 1 A/μs
T
J
= 25 °C
V
d
= 0.67 % V
DRM
μs
I
TM
= 300 A, – dl/dt = 15 A/μs; T
J
= T
J
maximum
Typical turn-off time
t
q
50 to 200
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
I
RRM
I
DRM
,
T
J
= 125 °C
50
mA
50 Hz, circuit to base,
RMS insulation voltage
V
INS
3500
1000
V
all terminals shorted, t = 1 s
Critical rate of rise of
off-state voltage
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
dV/dt
V/μs
Revision: 27-Jul-2018
Document Number: 95901
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU162…Pb
F
,
V
S-VSKV162…PbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
t
p
5 ms, T
J
= T
J
maximum
VALUES
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
12
3
W
A
P
G(AV)
I
GM
f = 50 Hz, T
J
= T
J
maximum
3
t
p
5 ms, T
J
= T
J
maximum
Maximum peak negative
gate voltage
– V
GT
10
T
J
= – 40 °C
T
J
= 25 °C
4
V
Maximum required DC
gate voltage to trigger
V
GT
2.5
1.7
270
150
80
T
J
= T
J
maximum
T
J
= – 40 °C
Anode supply = 6 V,
resistive load; R
a
= 1
Maximum required DC
gate current to trigger
I
GT
T
J
= 25 °C
mA
T
J
= T
J
maximum
Maximum gate voltage
that will not trigger
V
GD
I
GD
0.3
10
V
T
J
= T
J
maximum, rated V
DRM
applied
Maximum gate current
that will not trigger
mA
A/μs
Maximum rate of rise of
turned-on current
dI/dt
T
J
= T
J
maximum, I
TM
= 400 A rated V
DRM
applied
300
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
T
J
-40 to +125
°C
Maximum storage
temperature range
T
Stg
R
thJC
R
thCS
-40 to +150
0.16
Maximum thermal resistance,
junction to case per junction
DC operation
K/W
Nm
Maximum thermal resistance,
case to heat sink per module
Mounting surface, smooth, flat and greased
0.05
IAP to heat sink
busbar to IAP
Mounting
torque 10
%
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
4 to 6
200
7.1
g
Approximate weight
Case style
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
DEVICES
UNITS
180°
120°
0.0031
90°
60°
30°
180°
120°
0.0036
90°
60°
30°
VS-VSK.162
0.0030
0.0032
0.0033
0.0034
0.0029
0.0039
0.0041
0.0040
K/W
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Jul-2018
Document Number: 95901
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU162…Pb
F
,
V
S-VSKV162…PbF Series
Vishay Semiconductors
130
120
110
100
90
400
R
(DC) = 0.16 K/W
DC
thJC
350
180
120
300
90
60
30
250
200
150
100
50
Conduction Angle
RMS Limit
30
Conduction Period
Per Junction
60
90
80
120
180
T
=
1
2
5
°C
J
0
70
0
30
60
90
120
150
180
0
30 60 90
120 150 180 210 240 270
Average On-state Current (A)
Average Forw
ard Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – On-State Power Loss Characteristics
130
120
110
100
90
4500
R
(DC )
= 0.16 K/W
At A
ny Rated Load Cond
i
tion And W
ith
thJC
Rated V
Applied Following Surge.
RRM
I
n
i
tial T
= 125°C
4000
3500
3000
2500
2000
1500
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
30
60
80
90
120
70
180
DC
Per Junction
60
0
50
100
150
200
250
300
1
10
100
Num ber
O f
Equa l
Am plitud e
Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
400
5000
Maximum Non Repetitive Surge Current
Ve
r
sus Pulse Train Duration. Control
Per Junction
350
300
250
200
150
100
50
4500
4000
3500
3000
2500
2000
1500
O f
C
onduction May Not Be Ma
i
n
tained.
T
=
1
2
5
°C
J
I
n
i
tial T
= 125°C
J
No Vo
l
t
age Reapplied
180
120
90
60
30
Rated V
Reapplied
RRM
RMS Limit
Conduction Angle
Per Junction
0
0
20 40 60 80
100 120 140 160 180
Average On-state Current (A)
0.01
0.1
Pu
l
se Train
D
urat
i
o
n (s)
1
Fig. 3 – On-State Power Loss Characteristics
Fig. 6 – Maximum Non-Repetitive Surge Current
Revision: 27-Jul-2018
Document Number: 95901
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU162…Pb
F
,
V
S-VSKV162…PbF Series
Vishay Semiconductors
600
500
400
300
R
t
h
S
A
180
120
90
60
30
0
=
.
0
0
.
8
K
0
/
2
W
K
/
W
–
Δ
R
Conduct
i
o n
A
ngle
200
100
0
0
.
2
K
/
W
Per Module
T
= 12
5
°C
J
0
100
200
300
40
0
25
50
75
100
125
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 – On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
0
.
0
t
8
h
K
S
/
A
W
180
(Sine)
180
(Rect)
0
.
3
K
/
W
Single Phase Bridge
Connected
=
1
2
5
°C
T
J
25
50
75
100
125
0
50
100
150
200
250
300
Total Output Current (A)
Maximum Allowable Ambient Temperature
(
°C)
Fig. 8 – On-State Power Loss Characteristics
1500
1250
1000
750
500
250
0
120
(Rect)
0
.
3
K
/
W
Three Phase Bridge
Connected
0
.
6
K
/
W
T
= 12
5
°C
J
0
50 100
150 200 250 300 350 400
4
5
0
25
50
75
100
125
M
a
xim um
Allowable Am
bient Tem
perature
(
°C)
Total Output Current (A)
Fig. 9 – On-State Power Loss Characteristics
Revision: 27-Jul-2018
Document Number: 95901
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU162…Pb
F
,
V
S-VSKV162…PbF Series
Vishay Semiconductors
1
10000
1000
100
10
Steady State Value
(DC Operation)
T =
25˚C
J
T =
125˚C
J
0.1
1
0.01
0
1
2
3
4
5
0.01
0.1
1
10
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 10 – On-State Voltage Drop Characteristics
Fig. 11 – Thermal Impedance Z
thJC
Characteristics
100
Rectangular gate p
ulse
(1) PGM = 200 W
, tp = 300 s
(2) PGM = 60 W
, tp = 1 m
s
(3) PGM = 30 W
, tp = 2 m
s
(4) PGM = 12 W
, tp = 5 m
s
a)Recomm ended
l
o
a d
line for
r
a
ted dI/dt: 20 V, 20
W
tr = 0.5 s, tp >= 6 s
b)Recomm ended
loa d
line for
<= 30% ra
ted d
I/dt: 15 V, 40
W
10
1
tr = 1 s, tp >= 6 s
(a)
(
b
)
(4)
(3) (2)
(1)
VG D
IG D
Frequency Lim
ited by PG(AV
)
10 100
0.1
0.001
0.01
0.1
1
1000
Instantaneous Gate Current (A)
Fig. 12 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KU
162 16
PbF
2
3
4
5
1
1
2
3
4
5
–
–
–
–
Vishay Semiconductors product
Circuit configuration
Current rating: I
T(AV)
Voltage code x 100 = V
RRM
–
PbF = Lead (Pb)-free
Note
•
Revision: 27-Jul-2018
Document Number: 95901
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU162…Pb
F
,
V
S-VSKV162…PbF Series
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
CONFIGURATION CODE
(1)
~
1
2
3
~
VSKU
–
–
Two SCRs common cathodes
U
(2)
–
–
K1
G1
K2
G2
(3)
G1 K1
K2 G2
(1)
~
1
2
3
~
VSKV
+
(2)
Two SCRs common anodes
V
+
+
+
K2
G2
K1
G1
(3)
G1 K1
K2 G2
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 27-Jul-2018
Document Number: 95901
7
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
DIMENSIONS
in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
17 (0.67)
23 (0.91)
23 (0.91)
5 (0.20)
1
2
3
66 (2.60)
94 (3.70)
37 (1.44)
3 screws M6 x 10
Document Number: 95067
Revision: 15-Feb-08
1
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Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
Document Number: 91000
1
