Vishay-Intertech-VS-VSKU41-16
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Thyristor, 45 A, 60 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
ADD-A-
P
A
K
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
I
T(AV)
45 A, 60 A
• Up to 1600 V
Type
Modules – thyristor, standard
AAP Gen 7 (TO-240AA)
• High surge capability
Package
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
ELECTRICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of APP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VS-VSK.41
45
VS-VSK.56
60
UNITS
I
T(AV)
85 °C
I
T(RMS)
70
95
A
50 Hz
60 Hz
50 Hz
60 Hz
850
1200
I
TSM
890
1256
3.61
7.20
I
2
t
kA
2
s
3.30
6.57
I
2
t
V
RRM
T
Stg
T
J
36.1
72
kA
2
s
V
Range
400 to 1600
400 to 1600
-40 to +125
-40 to +125
°C
°C
Revision: 26-Jul-2018
Document Number: 94653
1
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
V
DRM
, MAXIMUM REPETITIVE
I
RRM,
I
DRM
VOLTAGE
TYPE NUMBER
CODE
NON-REPETITIVE PEAK
PEAK OFF-STATE VOLTAGE,
AT 125 °C
mA
REVERSE VOLTAGE
V
GATE OPEN CIRCUIT
V
04
400
800
500
900
400
800
08
12
16
VS-VSK.41
VS-VSK.56
15
1200
1600
1300
1700
1200
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VS-VSK.41 VS-VSK.56
UNITS
Maximum average on-state
current
180° conduction, half sine wave,
I
T(AV)
45
60
T
C
= 85 °C
A
DC
70
95
Maximum continuous RMS
on-state current
I
T(RMS)
T
C
82
81
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
850
890
715
750
3.61
3.30
2.56
2.33
1200
1256
1000
1056
7.20
6.57
5.10
4.56
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
Maximum peak, one-cycle
non-repetitive on-state current
I
TSM
A
100 % V
RRM
reapplied
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
Initial T
J
= T
J
maximum
kA
2
s
100 % V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
Maximum I
2
t for fusing
I
2
t
(1)
36.1
72
kA
2
s
Low level
(3)
1.08
1.12
4.7
0.91
1.02
4.27
3.77
1.7
Maximum value of threshold
voltage
(2)
V
T(TO)
T
J
= T
J
maximum
V
High level
(4)
Low level
(3)
Maximum value of on-state
slope resistance
(2)
r
t
T
J
= T
J
maximum
m
High level
(4)
4.5
Maximum on-state voltage drop
V
TM
I
TM
=
x I
T(AV)
T
J
= 25 °C
T
J
= 25 °C, from 0.67 V
DRM
,
1.81
V
Maximum non-repetitive rate of
rise of turned on current
dI/dt
150
A/μs
I
TM
=
x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
I
H
I
L
200
400
mA
T
J
= 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(2)
(3)
(4)
I
2
t for time t
x
= I
2
t x
t
x
Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
16.7 % x
x I
AV
< I <
x I
AV
I >
x I
AV
2
)
Revision: 26-Jul-2018
Document Number: 94653
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
VS-VSK.41 VS-VSK.56
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10
W
P
G(AV)
I
GM
2.5
2.5
10
A
– V
GM
T
J
= – 40 °C
4.0
2.5
1.7
270
150
80
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
Anode supply = 6 V
resistive load
I
GT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
V
GD
I
GD
T
J
= 125 °C, rated V
DRM
applied
T
J
= 125 °C, rated V
DRM
applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VS-VSK.41 VS-VSK.56
UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 125 °C, gate open circuit
15
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
V
INS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
T
J
= 125 °C, linear to 0.67 V
DRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VS-VSK.41 VS-VSK.56
UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
-40 to +125
0.44 0.35
°C
Maximum internal thermal resistance,
junction to case per leg
R
thJC
R
thCS
DC operation
°C/W
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and
greased
0.1
4
A mounting compound is recommended
and the torque should be rechecked after
a period of
to heatsink
Mounting torque
10 %
Nm
busbar
3
3 hours to allow for the spread of the
compound.
75
g
Approximate weight
Case style
2.7
oz.
JEDEC
®
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
120° 90°
60°
0.138 0.177 0.235
0.111 0.143 0.189
DEVICES
UNITS
180°
0.110
0.088
120°
0.131
0.104
90°
0.17
60°
0.23
30°
180°
0.085
0.07
30°
VSK.41..
VSK.56..
0.342
0.273
0.345
0.275
°C/W
0.134
0.184
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94653
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Vishay Semiconductors
130
120
110
100
90
120
VSK.41 Series
RthJC (DC) = 0.44°C/W
180°
120°
90°
100
80
60
40
20
0
60°
DC
30°
RMS limit
180°
120°
90°
60°
30°
VSK.41 Series
Per leg, Tj = 125°C
80
0
10 20 30 40 50 60 70 80
Average on-state current (A)
0
10
20
30
40
50
Average on-state current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – On-State Power Loss Characteristics
800
130
120
110
100
90
VSK.41 Series
RthJC (DC) = 0.44 °C/W
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
700
600
500
400
300
@ 60
Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
80
Per leg
70
1
10
100
0
10 20 30 40 50 60 70 80
Average on-state current (A)
Number of equal amplitude half cycle current pulses (N)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
80
70
60
50
40
30
20
10
0
900
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintaned.
Initial Tj = 125°C
800
700
600
500
400
300
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
VSK.41 Series
Per leg, Tj = 125°C
Per leg
0.01
0.1
1
0
5
10 15 20 25 30 35 40 45 50
Average on-state current (A)
Pulse train duration (s)
Fig. 3 – On-State Power Loss Characteristics
Fig. 6 – Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Vishay Semiconductors
350
RthSA = 0.1 °C/W
180°
(sine)
180°
(rect)
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
300
250
200
150
100
50
1.5 °C/W
∼
2 x VSK.41 Series
single phase bridge connected
Tj = 125°C
0
0
20
40
60
80
1
0
0
0
20 40 60 80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 7 – On-State Power Loss Characteristics
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
60°
(rect)
1 °C/W
3 x VSK.41 Series
6-pulse midpoint
connection bridge
Tj = 125°C
0
200
20 40 60 80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 8 – On-State Power Loss Characteristics
0
50
100
150
Total output current (A)
1000
100
10
VSK. 41 Series
Per leg
Tj = 125°C
Tj = 25°C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
Fig. 9 – On-State Voltage Characteristics
Revision: 26-Jul-2018
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Vishay Semiconductors
130
120
110
100
90
140
VSK.56 Series
RthJC (DC) = 0.35°C/W
180°
120°
90°
120
100
80
60
40
20
0
60°
30°
DC
RMS limit
180°
120°
90°
60°
30°
VSK.56 Series
Per leg, Tj = 125°C
80
0
20
Average on-state current (A)
Fig. 13 – On-State Power Loss Characteristics
40
60
80
100
0
10 20 30 40 50 60 70
Average on-state current (A)
Fig. 10 – Current Ratings Characteristics
1100
130
120
110
100
90
VSK.56 Series
RthJC (DC) = 0.35 °C/W
At any rated load condition and with
rated Vrrm applied following surge
1000
900
800
700
600
500
400
Initial Tj = Tj max
@ 60
Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
80
Per leg
70
1
10
100
0
20
40
60
80
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 11 – Current Ratings Characteristics
Fig. 14 – Maximum Non-Repetitive Surge Current
100
80
60
40
20
0
1300
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
1200
1100
1000
900
800
700
600
500
400
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
VSK.56 Series
Per leg
Per leg,
Tj = 125°C
0.01
0.1
1
0
10 20 30 40 50 60 70
Average on-state current (A)
Pulse train duration (s)
Fig. 12 – On-State Power Loss Characteristics
Fig. 15 – Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94653
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VS-VSKU41.., VS-VSKV41.., VS-VSKU56.., VS-VSKV56.. Series
Vishay Semiconductors
600
RthSA = 0.1 °C/W
0.2 °C/W
180°
(sine)
180°
(rect)
500
400
300
200
100
0
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
2 °C/W
∼
2 x VSK.56 Series
single phase bridge connected
Tj = 125°C
0
20 40 60 80
100 120 140
0
20 40 60 80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 16 – On-State Power Loss Characteristics
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
60°
(rect)
1 °C/W
3 x VSK. 56 Series
6-pulse midpoint
connection bridge
Tj = 125°C
0
20 40 60 80
100 120 140
0
50
100 150 200 250 300
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 17 – On-State Power Loss Characteristics
1000
VSK. 56 Series
Per leg
100
10
1
Tj = 125°C
Tj = 25°C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous on-state voltage (V)
Fig. 18 – On-State Voltage Characteristics
Revision: 26-Jul-2018
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Vishay Semiconductors
1
Steady state value
RthJC = 0.44 °C/W
RthJC = 0.35 °C/W
(DC operation)
0.1
VSK.41 Series
VSK.56 Series
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 19 – Thermal Impedance Z
thJC
Characteristics
100
R
e
ctangular gate pul
s
e
(
1
) P
G
M = 100 W,
t
p =
5
00 µs
(
2
) P
G
M = 50 W, tp = 1 ms
(
3
) P
G
M = 20 W, tp = 25 ms
(
4
) P
G
M = 10 W, tp = 5 ms
a)
R
e
commended load line for
r
a
ted d
i
/
d
t:
2
0 V, 30 ohms
tr =
0
.5 µ
s
,
t
p
>
= 6 µs
b)
R
e
commended load line for
<= 30
%
r
a
ted di/ dt:
2
0 V, 65 ohms
tr = 1
µ
s
,
t
p >= 6 µs
10
1
(a)
(b)
(
4
)
(2) (1)
(
3
)
VGD
IGD
0.01
VSK.
I
R
K
.
41../ .56..
S
e
r
i
e
s
F
r
equency
L
i
mited by
P
G
(AV)
0.1
0.001
0.1 10
100 1000
1
Instantaneous gate current (A)
Fig. 20 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
K
U
56
/
16
1
2
3
4
5
1
2
3
4
5
–
–
–
Vishay Semiconductors product
Module type
Circuit configuration (see Circuit Configuration table)
41 = 45 A
56 = 60 A
–
–
Current code
Voltage code (see Voltage Ratings table)
Note
•
Revision: 26-Jul-2018
Document Number: 94653
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Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKU
(1)
+
1
–
2
3
Two SCRs common cathodes
U
(2)
4 5
7 6
–
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
VSKV
(1)
–
1
+
2
Two SCRs common anodes
V
(2)
3
4 5
7 6
+
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 26-Jul-2018
Document Number: 94653
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII – Thyristor
DIMENSIONS
in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3
(3.15 0.01ꢀꢁ
15 0.5
(0.59 0.0ꢀ0ꢁ
ꢀ0 0.5
(0.79 0.0ꢀ0ꢁ
ꢀ0 0.5
(0.79 0.0ꢀ0ꢁ
9ꢀ 0.75
(3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
1
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Revision: 01-Jan-2023
Document Number: 91000
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