Vishay-Intertech-VS-VSKV105-16
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VS-VSKU105.., VS-VSKV105.. Series
Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Thyristor, 105 A
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
ADD-A-
P
A
K
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
I
T(AV)
105 A
• Up to 1600 V
Type
Modules – thyristor, standard
AAP Gen 7 (TO-240AA)
• High surge capability
• Easy mounting on heatsink
Package
ELECTRICAL DESCRIPTION
MECHANICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of AAP
module, combines the excellent thermal performances
obtained by the usage of exposed direct bonded copper
substrate, with advanced compact simple package solution
and simplified internal structure with minimized number of
interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
105
UNITS
I
T(AV)
85 °C
I
T(RMS)
165
A
50 Hz
60 Hz
50 Hz
60 Hz
2000
I
TSM
2094
20
I
2
t
kA
2
s
18.26
I
2
t
V
RRM
T
Stg
T
J
200
kA
2
s
V
Range
400 to 1600
-40 to +130
-40 to +130
°C
°C
Revision: 26-Jul-2018
Document Number: 94656
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU105.., VS-VSKV105.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
, MAXIMUM
V
RSM
, MAXIMUM
V
DRM
, MAXIMUM REPETITIVE
I
RRM,
I
DRM
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
PEAK OFF-STATE VOLTAGE,
TYPE NUMBER
AT 130 °C
mA
REVERSE VOLTAGE
V
GATE OPEN CIRCUIT
V
04
08
12
16
400
800
500
900
400
800
VS-VSK.105
15
1200
1600
1300
1700
1200
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
A
180° conduction, half sine wave,
Maximum average on-state current
I
T(AV)
105
T
C
= 85 °C
DC
165
78
Maximum continuous RMS on-state current
I
T(RMS)
T
C
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
2000
2094
1682
1760
20
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
Maximum peak, one-cycle non-repetitive
on-state current
I
TSM
A
100 % V
RRM
reapplied
No voltage
reapplied
18.26
14.14
12.91
Initial T
J
=
T
J
maximum
Maximum I
2
t for fusing
I
2
t
kA
2
s
100 % V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
Maximum I
2
t for fusing
I
2
t
(1)
200
kA
2
s
Low level
(3)
0.98
1.12
2.7
(2)
Maximum value of threshold voltage
V
T(TO)
T
J
= T
J
maximum
V
High level
(4)
Low level
(3)
Maximum value of on-state
slope resistance
(2)
r
t
T
J
= T
J
maximum
m
High level
(4)
2.34
1.8
Maximum on-state voltage drop
V
TM
I
TM
=
x I
T(AV)
T
J
= 25 °C
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
V
Maximum non-repetitive rate of rise of
turned on current
dI/dt
150
A/μs
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
Maximum holding current
Maximum latching current
I
H
I
L
250
400
mA
T
J
= 25 °C, anode supply = 6 V, resistive load
Notes
(1)
(2)
(3)
(4)
I
2
t for time t
x
= I
2
t x
t
x
Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
16.7 % x
x I
AV
< I <
x I
AV
I >
x I
AV
2
)
Revision: 26-Jul-2018
Document Number: 94656
2
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU105.., VS-VSKV105.. Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
VALUES
12
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
W
A
P
G(AV)
I
GM
3.0
3.0
– V
GM
10
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 125 °C
4.0
V
Anode supply = 6 V
resistive load
Maximum gate voltage required to trigger
Maximum gate current required to trigger
V
GT
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
I
GT
mA
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
V
GD
I
GD
T
J
= 125 °C, rated V
DRM
applied
T
J
= 125 °C, rated V
DRM
applied
0.25
6
V
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 130 °C, gate open circuit
20
mA
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
V
INS
50 Hz
V
Maximum critical rate of rise of off-state voltage
dV/dt
T
J
= 130 °C, linear to 0.67 V
DRM
1000
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
-40 to 130
°C
Maximum internal thermal resistance,
junction to case per leg
R
thJC
R
thCS
DC operation
0.22
0.1
°C/W
Nm
Typical thermal resistance,
case to heatsink per module
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
busbar
4
3
Mounting torque
10 %
75
g
Approximate weight
Case style
2.7
oz.
JEDEC
®
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
DEVICES
UNITS
°C/W
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.105..
0.04
0.048
0.063
0.085
0.125
0.033
0.052
0.067
0.088
0.127
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94656
3
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU105.., VS-VSKV105.. Series
Vishay Semiconductors
130
120
110
100
90
260
240
RthJC (DC) = 0.22°C/W
180°
120°
220
90°
200
180
160
140
120
100
80
60°
30°
DC
RMS limit
180°
120°
90°
60°
30°
60
40
20
80
Per leg,
Tj = 130°C
70
0
0
20
40
60
80
100 120
0
20 40 60 80
100 120 140 160 180
Average on-state current (A)
Average on-state current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – On-State Power Loss Characteristics
130
120
110
100
90
1800
RthJC (DC) = 0.22°C/W
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
1600
1400
1200
1000
800
@ 60
Hz 0.0083 s
@ 50 Hz 0.0100s
DC
180°
120°
90°
60°
30°
Per leg
80
70
1
10
100
0
20 40 60 80
100 120 140 160 180
Average on-state current (A)
Number of equal amplitude half cycle current pulses (N)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
200
180
160
140
120
100
80
2000
180°
120°
90°
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 130°C
1800
1600
1400
1200
1000
800
60°
30°
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
60
40
Per leg
20
Per leg, Tj = 130°C
0
0.01
0.1
1
0
20
Average on-state current (A)
Fig. 3 – On-State Power Loss Characteristics
40
60
80
100 120
Pulse train duration (s)
Fig. 6 – Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94656
4
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU105.., VS-VSKV105.. Series
Vishay Semiconductors
700
600
500
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
180°
(sine)
180°
(rect)
2 °C/W
400
∼
300
200
100
0
2 x VSK.105 Series
single phase bridge connected
Tj = 130°C
0
40
80
120
160
2
0
00
20 40 60 80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 7 – On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
60°
(rect)
3 x VSK. 105 Series
6-pulse midpoint
connection bridge
Tj = 125°C
0
400
20 40 60 80
100 120 140
0
100
200
300
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 – On-State Power Loss Characteristics
1000
100
10
Per leg
Tj = 130°C
Tj = 25°C
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Instantaneous on-state voltage (V)
Fig. 9 – On-State Voltage Characteristics
Revision: 26-Jul-2018
Document Number: 94656
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,
DiodesAsia@vishay.com
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU105.., VS-VSKV105.. Series
Vishay Semiconductors
1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
0.1
0.01
Per leg
0.001
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 10 – Thermal Impedance Z
thJC
Characteristics
100
10
1
R
e
ctangular gate pu
l
se
(1)
P
G
M = 200 W, tp = 300 µs
a)
R
e
commended load line for
r
a
ted di/dt:
2
0 V, 2
0
o
hms
tr =
0
.5 µ
s
,
t
p
>
= 6 µs
(2)
P
G
M = 60 W, tp = 1 ms
(3)
P
G
M = 30 W, tp = 2 ms
(4)
P
G
M = 12 W, tp = 5 ms
b)
R
e
commended load line for
<= 30
%
r
a
ted di
/
dt:
1
5 V, 40 ohms
tr = 1 µ
s
,
t
p >= 6 µs
(
a
)
(b)
(
3
)
(4)
(
2
)
(1)
VGD
I
G
D
0.01
F
r
equen
c
y
L
i
m
ited by
P
G
(AV)
10 100
1000
V
S
K
.
105..
S
e
r
i
e
s
0.1
0.001
0.1
1
Instantaneous gate current (A)
Fig. 11 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
K
U
105
/
16
1
2
3
4
5
1
2
3
4
5
–
Vishay Semiconductors product
Module type
–
–
–
–
Circuit configuration (see Circuit Configuration table)
Current code (105 A)
Voltage code (see Voltage Ratings table)
Note
•
Revision: 26-Jul-2018
Document Number: 94656
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For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-VSKU105.., VS-VSKV105.. Series
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKU
CONFIGURATION CODE
(1)
+
1
–
2
3
Two SCRs common cathodes
U
(2)
4 5
7 6
–
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
VSKV
(1)
–
1
+
2
Two SCRs common anodes
V
(2)
3
4 5
7 6
+
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 26-Jul-2018
Document Number: 94656
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII – Thyristor
DIMENSIONS
in millimeters (inches)
Fast-on tab ꢀ.8 x 0.8 (0.110 x 0.03ꢁ
Viti M5 x 0.8
Screws M5 x 0.8
15.5 0.5
(0.6 0.0ꢀ0ꢁ
18 (0.7ꢁ REF.
80 0.3
(3.15 0.01ꢀꢁ
15 0.5
(0.59 0.0ꢀ0ꢁ
ꢀ0 0.5
(0.79 0.0ꢀ0ꢁ
ꢀ0 0.5
(0.79 0.0ꢀ0ꢁ
9ꢀ 0.75
(3.6 0.030ꢁ
Document Number: 95368
Revision: 11-Nov-08
1
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Revision: 01-Jan-2023
Document Number: 91000
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