VSS-VS3P07C
| Part # | VSS-VS3P07C |
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VS3P07C
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
D
-30V, -37A, R
DS(ON)
= 10m
Ω
@V
GS
= -10V.
R
DS(ON)
= 15m
Ω
@V
GS
= -4.5V.
Super High dense cell design for extremely low R
DS(ON)
High power and current handing capability.
Lead-free plating ; RoHS compliant.
.
G
S
E E
E E
8
7
6
5
Bottom View
4
3
2
1
DFN3*3
H T T T
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
V
DS
Limit
-30
Units
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
-37
-23
-11
-7
A
A
A
A
T
C
= 25 C
T
C
= 100 C
T
A
= 25 C
T
A
= 100 C
I
D
Drain Current-Pulsed
a
-148
A
T
C
= 25 C
I
DM
-44
25
2.5
A
W
W
C
T
A
= 25 C
T
C
= 25 C
Maximum Power Dissipation
P
D
T
A
= 25 C
Operating and Store Temperature Range
T
J
,T
stg
-55 to 150
Thermal Characteristics
Parameter
Symbol
R
θ
Jc
Limit
5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
b
Thermal Resistance, Junction-to-Ambient
b
R
θ
JA
50
1
VS3P07C
Electrical Characteristics
T =
25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
BV
DSS
I
DSS
V
GS
= 0
V
, I
D
= -250
μ
A
V
DS
= -30
V
,
V
GS
= 0V
V
GS
= 20
V
,
V
DS
= 0V
-30
V
-1
μ
A
nA
nA
I
GSSF
I
GSSR
100
-100
V
GS
= -20
V
, V
DS
= 0V
Gate Threshold Voltage
Static Drain-Source
V
GS(th)
R
DS(on)
V
GS
= V
DS
, I
D
= -250
μ
A
-1
-3
10
15
V
V
GS
= -10
V
, I
D
= -10A
V
GS
= -4.5
V
, I
D
=-5A
8
m
Ω
m
Ω
On-Resistance
Dynamic Characteristics
d
Input Capacitance
12
C
iss
C
oss
C
rss
3760
415
pF
pF
pF
V
DS
= -15
V
, V
GS
= 0
V
,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
345
t
d(on)
t
r
t
d(off)
t
f
36
20
109
50
28
7
ns
ns
V
DD
= -24
V
, I
D
= -10A,
V
Turn-On Rise Time
GS
= -10
V
, R
GEN
= 6
Ω
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
T
o
tal Gate Charge
Q
g
nC
nC
nC
V
V
DS
= -24
V
, I
D
= -10A,
GS
= -10V
Gate-Source Charge
Q
gs
Q
gd
Gate-Drain Charge
11
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
c
I
S
-2.5
-1
A
V
V
SD
V
GS
= 0
V
, I
S
= -1A
Notes:
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
VS3P07C
15
12
9
15
12
9
25 C
-V
GS
=10,8,6,5,4V
-V
GS
=3V
6
6
3
3
0
T
J
=125 C
1
-55 C
0
0
0.2
0.4
0.6
0.8
1.0
0
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
4800
4000
3200
2400
1600
800
I
D
=-10A
V
GS
=-10V
C
iss
C
oss
C
rss
0
-100
-50
0
50
100
150
200
0
5
10
15
20
25
-V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance
V
a
riation
with
T
e
mperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
I
D
=-250μA
V
GS
=0V
10
2
10
1
10
0
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature( C)
-V
SD
, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
VS3P07C
10
2
10
1
10
0
10
-1
10
-2
10
8
V
DS
=-24V
I
D
=-10A
R
DS(ON)
Limit
10ms
100ms
1s
6
4
2
DC
T
A
=25 C
T
J
=150 C
Single Pulse
0
10
-2
10
-1
10
0
10
1
10
2
0
15
30
45
60
75
Qg, Total Gate Charge (nC)
-V
DS
, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
V
DD
on
t
t
off
d(off)
r
t
t
d(on)
OUT
R
L
t
f
t
V
IN
90%
10%
90%
D
OUT
V
V
V
GS
10%
INVERTED
R
GEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
P
DM
t
1
0.01
10
-2
t
2
1. R
į
JA
(t)=r (t) * R
į
JA
2. R
į
JA
=See Datasheet
3. T
JM-
T
A
= P* R
į
JA
(t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 10. Normalized Thermal Transient Impedance Curve
4
