Wade-WD2002
| Part # | Wade-WD2002 |
Download  | Wade-WD2002 |
W
D
2002
LIN
E
AR INT
E
GRAT
E
D CIRCUIT
HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
The WD2002 is a monolithic high voltage and high current
darlington transistor arrays. It consists of four NPN darlington
pairs that features high-voltage outputs with common-cathode
clamp diode for switching inductive loads. The collector-current
rating of a single darlington pair is 500mA. The darlington pairs
may be parrlleled for higher current capability. Applications include
relay drivers,hammer drivers, lamp drivers,display drivers(LED
gas discharge),line drivers, and logic buffers.
MSOP-10-0.5
The WD2002 has a 2.7k
series base resistor for each
darlington pair for operation directly with TTL or 5V CMOS
devices.
FEATURES
TYPICAL APPLICATIONS
* 500mA rated collector current(Single output)
* High-voltage outputs: 50V
* Relay drive
* Indicator Drive
* Display Driver
* Inputs compatibale with various types of logic.
* Relay driver application
ORDERING INFORMATION
Ordering Number
WD2002-MSC-R-T
Package
Print Number
WD2002
Free
Packing
RoHS
Tube
MSOP-10-0.5
2002 – MSC – R – T
WD
Packing Type
：
T:Tube
，
R:Tape Reel
，
K
：
Bulk
，
B
：
Tape Box
Green Package
：
R:RoHS
Package
：
MSC:MSOP-10-0.5
Number
Wade Semiconductor Co,LTD
Rev : V1.2
1/7
W
D
2002
LIN
E
AR INT
E
GRAT
E
D CIRCUIT
LOGIC DIAGRAM
1
2
10
IN1
IN2
OUT1
OUT2
OUT3
OUT4
COM
9
8
3
IN3
4
5
7
6
IN4
GND
PIN DESCRIPTION
PIN NO.
PIN NAME
DESCRIPTION
PIN NO.
PIN NAME
DESCRIPTION
Clamp Diode
1
2
3
4
5
IN1
IN2
1 Channel Input Pin
2 Channel Input Pin
3 Channel Input Pin
4 Channel Input Pin
ground
6
7
COM
OUT4
OUT3
OUT2
OUT1
4 Channel Output Pin
3 Channel Output Pin
2 Channel Output Pin
1 Channel Output Pin
IN3
8
IN4
9
GND
10
BLOCK DIAGRAM
COM
OUT
IN
2.7k
Ω
7.2k
Ω
3k
Ω
GND
Note: The input and output parasitic diodes cannot be used as clamp diodes.
Wade Semiconductor Co,LTD
Rev : V1.2
2/7
W
D
2002
LIN
E
AR INT
E
GRAT
E
D CIRCUIT
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C)
Characteristic
Symbol
Value
Unit
Colletor-Emitter Voltage
Input Voltage
V
CE
V
I
50
30
V
V
Peak Collector Current
Total Emitter-terminal
Power Dissipation
Io
500
mA
mA
W
I
OK
Pd
500
0.6
Operating Temperature
Storage Temperature
Topr
Tstg
-40~ +85
-65 ~ +150
C
C
Note: 1. All volatge values are with repect to the emitter/substrate terminal E, unless otherwise noted.
2. On PCB
ELECTRICAL CHARACTERISTICS
(Ta=25
C,unless otherwise specified)
Test
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Units
V
Figure
V
CE
=2V,Ic=200mA
V
CE
=2V,Ic=250mA
V
CE
=2V,Ic=300mA
I
I
=250
A,Ic=100mA
2.4
2.7
3
On-state Input Voltage
6
V
I(ON)
0.9
1
1.1
1.3
1.6
50
Collector-Emitter Saturation
Voltage
5
V
CE(SAT)
I
I
=350
A,Ic=200mA
I
I
=500
A,Ic=350mA
V
1.2
1
2
8
3
4
V
CE
=50V,I
I
=0
I
CEX
Collector Cutoff Current
A
V
CE
=50V,I
I
=0,Ta=70
C
100
2
Clamp Forward Voltage
Off-state Input Current
Input Current
V
F
I
F
=350mA
1.7
65
V
I
I
(OFF) I
C
=500
A, Ta=70
C
50
A
mA
I
I
I
R
V
I
=3.85V
0.95
1.35
50
V
R
=50V
Clamp Reverse Current
7
—
9
A
pF
s
V
R
=50V, Ta=70
C
V
I
=0,f=1MHz
100
25
Input Capacitance
Propagation delay time, low-
to-high-level output
C
I
15
VIH=3V
，
VOH=50V
VIH=3V
，
VOH=50V
Vs=50V,Io=300mA
t
PLH
0.25
1
1
Propagation delay time,
high-to-low-level output
High-level output Voltage
after switching
9
t
PHL
V
OH
0.25
s
10
Vs-20
mV
Wade Semiconductor Co,LTD
Rev : V1.2
3/7
W
D
2002
LIN
E
AR INT
E
GRAT
E
D CIRCUIT
TEST CIRCUITS
Open
V
CE
Open
V
CE
Open
V
I
I
CEX
I
CEX
Figure 1 ICEX Test Circuit
Figure 2 ICEX Test Circuit
Open
V
CE
Open
I
I(off)
I
I(on)
Open
V
I
I
C
Figure 3 II(off) Test Circuit
Figure 4 II(on) Test Circuit
Open
Open
Ic
Ic
HFE
HFE
II
II
V
I(on)
V
CE
V
CE
I
I
I
C
I
C
Note: II is fixed for measuring VCE(sat),variable for
measuring HFE.
Figure 5
HFE,VCE(sat) Test Circuit
Figure 6 VI(on) Test Circuit
Wade Semiconductor Co,LTD
Rev : V1.2
4/7
W
D
2002
LIN
E
AR INT
E
GRAT
E
D CIRCUIT
V
R
I
R
V
F
I
F
Open
Open
Figure 7 IR Test Circuit
Figure 8 VF Test Circuit
50%
50%
INPUT
t
PHL
50%
t
PLH
OUTPUT
50%
Figure 9. Propagation Delay Time Waveforms
Vs
Input
Pulse
200
Ω
Output
Generator
(Note A)
CL=15pF
(Note B)
VIH
0V
90%
90%
1.5V
1.5V
10%
Input
10%
VOH
Output
VOL
Note: A.
The Pulse generatoe has the following characteristics: PRR=12.5kHz, Zo=50
B. CL includes proble and jig capacitance.
Figure 10. Latch-up Test Circuit and Voltage Waveforms
Wade Semiconductor Co,LTD
Rev : V1.2
5/7
W
D
2002
LIN
E
AR INT
E
GRAT
E
D CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Collector-Emitter saturation Voltage
vs. Total Collector Current
Collector-Emitter saturation Voltage
vs. Collector Current
(two darlington paralleled)
2.5
2.5
Ta=25
˚
C
Ta=25
˚
C
2.0
2.0
I
I
=350µ A
I
I
=350µ A
1.5
1.0
1.5
1.0
I
I
=250µ A
I
I
=250µ A
I
I
=500µ A
I
I
=500µ A
0.5
0
0.5
0
0
100
200
300
400 500
0
200
400
600
800 1000
Collector Current, Ic(mA)
Total Collector Current, Ic(tot) (mA)
Maximum Collector Current
Vs. Duty cycle
Collector Current Vs. Input Current
600
500
400
Ta=70
˚
C
Ta=25
˚
C
RL=10
Ω
N=1
500
Vs=10V
N=2
N=4
400
300
300
200
Vs=8V
200
100
100
0
N= Number of Outputs
Conductiong Simultaneously
0
50
100
150
200 250
0
20
40
60
80
100
Input Current, Ii(
µ
A)
Duty Cycle,
(%)
Wade Semiconductor Co,LTD
Rev : V1.2
6/7
W
D
2002
LIN
E
AR INT
E
GRAT
E
D CIRCUIT
PACKAGE OTLINE
MSOP-10-0.5
UNIT
：
mm
E
D
L
C
θ
e
b
Symbol
Min (mm)
—
Max(mm)
1.10
A
A1
A2
b
c
D
0.05
0.75
0.18
0.15
2.90
0.15
0.95
0.26
0.19
3.10
e
0.50
E
E1
L
2.80
4.70
0.40
0º
3.20
5.10
0.70
8º
θ
Wade Semiconductor Co,LTD
Rev : V1.2
7/7
