Wayon-WM03N32M
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Document: W0803125, Rev: D
WM03N32M
M
N-Channel MOSFET
Features
⚫
V
DS
= 30V, I
D
= 3.2A
R
DS(on)
< 47m
Ω @
V
GS
= 10V
R
DS(on)
< 65m
Ω @
V
GS
= 4.5V
DC/DC Converter
⚫
⚫
Load Switch for Portable Devices
Mechanical Characteristics
⚫
⚫
⚫
SOT-23 Package
Marking : Making Code
RoHS Compliant
Schematic & PIN Configuration
D
G
S
D
G
S
Device symbol
SOT-23(Top View)
Absolute Maximum Rating
Parameter
Symbol
V
DS
V
GS
I
D
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current
Pulsed Drain Current
1
3.2
A
I
DM
20
A
Power Dissipation
P
D
350
mW
°C
Operating Junction Temperature
Storage Temperature
T
J
150
T
STG
R
θJA
-55 to 150
357
°C
Thermal Resistance from Junction to Ambient
2
°C/W
©2019 WAYON Corporation
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N Channel MOSFET
WM03N32M
Electrical Characteristics
(T
amb
=25°C unless otherwise noted)
Parameter
Static Characteristics
Drain-Source Breakdown Voltage
Drain Cut-off Current
Symbol
Test Condition
Min. Typ. Max. Unit
BV
DSS
I
DSS
V
GS
= 0 V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
GS
= V
DS,
I
D
= 250µA
30
–
–
–
–
1
V
µA
nA
V
Gate leakage Current
I
GSS
–
–
±100
2
Gate Threshold Voltage
3
V
GS(th)
1.0
1.5
V
GS
= 10V, I
D
= 3.5A
V
GS
= 4.5V, I
D
= 2.8A
–
–
36
49
47
65
Drain-Source on-state Resistance
3
R
DS(on)
mΩ
Dynamic Characteristics
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
295
43
–
–
–
V
GS
= 0V, V
DS
= 15V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Total gate charge
4
Gate-source charge
4
Gate-drain charge
4
Turn-on Time
4
pF
34
Q
gt
Q
gs
Q
gd
t
d(on)
t
f
–
–
–
–
–
6
–
–
–
–
–
V
GS
=10V, V
DS
=15V,
I
D
= 2.5A
1.6
0.6
7
nC
V
GEN
= 10V,V
DD
= 15V,
R
L
= 15
Ω,R
g
= 6Ω,
I
D
=1A
Rise time
4
12
nS
V
Turn-off Time
4
Fall time
4
t
d(off)
t
f
–
–
14
6
–
–
Source-Drain Diode Characteristics
Body Diode Voltage
V
SD
I
S
=1A, V
GS
= 0V
–
–
1.2
Notes:
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. Guaranteed by design, not subject to producting.
©2019 WAYON Corporation
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N Channel MOSFET
WM03N32M
Typical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. R
DS(on)
vs. I
D
Figure 4. R
DS(on)
vs. V
GS
Figure 5. I
S
vs. V
SD
Figure 6. Capacitance Characteristics
©2019 WAYON Corporation
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N Channel MOSFET
WM03N32M
Outline Drawing
–
SOT-23
3
PACKAGE OUTLINE
1
2
D
b
SOT-23
3
DIMENSIONS
MILLIMETER
INCHES
MAX
SYMBO
L
0.25
E1 E
MIN
0.90
MAX
1.15
MIN
c
θ
L
A
A1
b
0.035
0.045
0.004
0.020
0.006
0.118
0.100
0.055
1
2
0.00
0.30
0.08
2.80
2.25
1.20
0.10
0.50
0.15
3.00
2.55
1.40
0.000
0.012
0.003
0.110
0.089
0.047
e
e1
c
D
E
A
E1
e
0.95 BSC
0.0374 BSC
A1
e1
L
1.80
0.45
0
。
2.00
0.65
8
。
0.071
0.018
0
。
0.079
0.026
8
。
θ
b
Notes
DIMENSIONS
DIM
M
C
INCHES
0.080
MILLIMETERS
2.02
1
. Dimensioning and tolerances per ANSI Y14.5M,
1985.
2
. Controlling Dimension: Inches
3
. Pin 3 is the cathode (Unidirectional Only).
4
. Dimensions are exclusive of mold flash and metal
burrs.
Z
M
0.032
0.80
C
Z
0.111
2.82
e
0.037 BSC
0.075 BSC
0.032
0.95 BSC
1.9 BSC
0.80
e
e1
b
e1
Marking Codes
Part Number
WM03N32M
Marking Code
S6
Package Information
Qty
：
3k/Reel
CONTACT INFORMATION
No.1001, Shiwan (7) Road, Pudong District, Shanghai, P.R.China.201207
For additional information, please contact your local Sales Representative.
® is registered trademark of Wayon Corporation.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
©2019 WAYON Corporation
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