Wayon-WML07N80M3
| Part # | Wayon-WML07N80M3 |
Download  | Wayon-WML07N80M3 |
WML07N80M3, WMN07N80M3, WMM07N80M3
WMO07N80M3, WMP07N80M3, WMK07N80M3
800V 1.6
Ω
Super Junction Power MOSFET
Descri
ption
WMOS
TM
M3 is Wayon’s 3
rd
generation 800V super
junction MOSFET family that is utilizing charge
balance technology for extremely low on-resistance
and low gate charge performance. WMOS
TM
M3 is
suitable for applications which require superior
power density and outstanding efficiency.
S
D
S
S
G
D
D
G
G
TO-220F
TO-262
TO-220
D
D
S
S
Feature
s
G
G
S
D
G
TO-263
TO-251
TO-252
V
DS
=850V @ T
j,max
Typ. R
DS(on)
=1.6
Ω
100% UIS tested
RoHS
Pb-free plating, Halogen free
compliant
Applica
tions
LED Lighting, Charger, Adapter, PC, LCD TV, Server
Absolute Maximum Ratings
Parameter
Symbol
V
DSS
I
D
WMN/WMM/WMO/WMP/WMK
WML
Unit
Drain-source voltage
800
V
A
Continuous drain current
1)
( T
C
= 25°C )
( T
C
= 100°C )
6.8
3.1
A
Pulsed drain current
2)
Gate-source voltage
I
DM
V
GS
E
AS
E
AR
I
AR
19
A
±30
V
Avalanche energy, single pulse
3)
Avalanche energy, repetitive
2)
Avalanche current, repetitive
2)
Power dissipation ( T
C
= 25°C )
15
0.07
mJ
mJ
A
0.7
P
D
55
26
W
– Derate above 25°C
0.44
0.21
W/°C
°C
A
Operating and storage temperature range
Continuous diode forward current
Diode pulse current
T
j
, T
stg
I
S
-55 to +150
6.8
I
S,pulse
19
A
Thermal Characteristics
Parameter
Symbol
R
θ
JC
WMN/WMM/WMO/WMP/WMK
WML
4.9
Unit
°C/W
°C/W
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
2.8
62
R
θ
JA
80
Rev.2.0, 2019
Doc.W0880018
1 / 13
WMx07N80M3
Electrical Characteristics
T
c
= 25°C, unless otherwise noted
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=800 V, V
GS
=0 V,
T
j
= 25°C
800
2.5
–
–
V
V
3.3
4.5
μ
A
–
–
–
–
–
–
–
10
–
1
–
T
j
= 125°C
Gate leakage current, forward
Gate leakage current, reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=1A
T
j
= 25°C
100
-100
nA
nA
–
R
DS(on)
1.6
1.8
Ω
Dynamic characteristics
Input capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DS
= 50 V, V
GS
= 0 V,
f = 1 MHz
–
–
–
–
–
–
–
360
14
–
–
–
–
–
–
–
pF
ns
Output capacitance
Reverse transfer capacitance
Turn-on delay time
1.1
19
V
DD
= 300V, I
D
= 1A
R
G
= 25
Ω
, V
GS
=10V
Rise time
13
Turn-off delay time
t
d(off)
t
f
41
Fall time
18
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
V
DD
=480 V, I
D
=1A,
V
GS
=0 to 10 V
–
–
–
–
1.8
2.1
6.8
5.4
–
–
–
–
nC
V
Q
g
Gate plateau voltage
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
plateau
V
SD
t
rr
V
GS
=0 V, I
F
=1A
V
R
=50 V, I
F
=1A,
dI
F
/dt=100 A/
μ
s
–
–
–
–
–
1.2
V
ns
μ
C
A
170
0.6
6.4
–
–
–
Q
rr
I
rrm
Notes:
1. Limited by T
j max
. Maximum duty cycle D=0.5.
2. Repetitive rating: pulse width limited by maximum junction temperature
3. I
AS
= 0.7A, V
DD
= 50V, R
G
= 25
Ω
, starting T
j
= 25°C
Rev.2.0, 2019
2 / 13
WMx07N80M3
4
3
2
1
0
3.5
V
GS
=10V
Common Source
T
c
= 25
°
C
V
DS
=20 V
Pulse test
Common Source
T
c
= 25
°
C
Pulse test
V
GS
=7V
V
GS
=6V
3
2.5
2
V
GS
=5.5V
1.5
1
V
GS
=5V
0.5
0
V
GS
=4.5V
0
4
8
12
16
3
4
5
6
7
8
9
V
GS
(V)
V
DS
(V)
Figure 1.On-Region Characteristics
Figure 2. Transfer Characteristics
4
100
3
10
1
V
GS
= 10V
2
1
T
c
= 25°C
Pulse test
T
c
= 25°C
Pulse test
0.1
0
1
2
3
4
0.2
0.7
1.2
1.7
I
D
(A)
V
SD
(V)
Figure 3. Static Drain-Source On Resistance
Figure 4. Body- Diode Forward Characteristics
1.2
3.5
3
1.1
1
2.5
2
1.5
1
0.9
V
GS
=10 V
I
DS
=1A
Pulse test
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
0.5
0.8
0
‐
60
‐
40
‐
20
0
20
40
60
80 100
120 140 160
‐
60
‐
40
‐
20
0
20 40 60 80
100 120 140 160
Temperature T
j
(°C)
Temperature T
j
(°C)
Figure 5. Normalized BV
DSS
vs. Temperature
Rev.2.0, 2019
Figure 6. Normalized R
DS(on)
vs. Temperature
3 / 13
WMx07N80M3
10000
1000
100
10
1.3
1.2
1.1
1
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
iss
0.9
0.8
C
oss
C
rss
0.7
I
DS
=0.25 mA
Pulse test
1
Notes:
f = 1 MHz
V
GS
=0 V
0.6
0.5
0.1
‐
60
‐
40
‐
20
0
20 40 60 80
100 120 140 160
0
100
200
300
400
500
600
700
800
Temperature T
j
(°C)
V
DS
(V)
Figure 7. Threshold Voltage vs. Temperature
Figure 8. Capacitance Characteristics
60
50
40
30
20
10
0
35
30
25
20
15
10
5
0
0
40
80
120
160
0
40
80
120
160
Temperature T
c
(
°
C)
Temperature T
c
(
°
C)
Figure 9. Power Dissipation
Figure 10. Power Dissipation (TO-220F)
100
100
Limited by R
DS(on)
Limited by R
DS(on)
10
10
1
10us
100us
1ms
100us
1
1ms
DC
DC
Notes:
T
c
= 25
°
C
0.1
0.01
Notes:
T
c
= 25
°
C
0.1
T
j
= 150
°
C
Single Pulse
T
j
= 150
°
C
Single Pulse
0.01
1
10
100
1000
1
10
100
1000
V
DS
(V)
V
DS
(V)
Figure 11. Maximum Safe Operating Area
Rev.2.0, 2019
Figure 12. Maximum Safe Operating Area(TO-220F)
4 / 13
WMx07N80M3
1.0E+01
1.0E+01
1.0E+00
1.0E
‐
01
1.0E
‐
02
1.0E
‐
03
In descending order
D= 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1.0E+00
1.0E
‐
01
1.0E
‐
02
1.0E
‐
03
Duty = t/T
(t)=2.8
°
C/W Max.
Duty = t/T
(t)=4.9
°
C/W Max.
Z
Z
θ
JC
θ
JC
1.0E
‐
06
1.0E
‐
04
1.0E
‐
02
1.0E+00
1.0E
‐
06
1.0E
‐
05
1.0E
‐
04
1.0E
‐
03
1.0E
‐
02
1.0E
‐
01
Pulse Width t (s)
Pulse Width t (s)
Figure 13. Transient Thermal Response Curve (TO-220F)
Figure 14. Transient Thermal Response Curve
10
8
V
DS
=480V
V
DS
=120V
6
4
2
0
I
D
= 1A
0
2
4
6
8
Q
G
(nC)
Figure 15. Gate Charge Characteristics
Rev.2.0, 2019
5 / 13
WMx07N80M3
Gate Charge Test Circuit & Waveform
Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Rev.2.0, 2019
6 / 13
WMx07N80M3
Mechanical Dimensions for TO-220F
COMMON DIMENSIONS
MM
J
SYMBOL
A
I
MIN
9.96
15.67
12.70
1.12
1.85
0.59
2.39
3.08
2.34
4.50
2.61
6.50
0.40
MAX
10.36
16.07
13.30
1.32
2.15
0.79
2.69
3.29
2.74
4.90
2.91
6.90
0.60
A
B
C
D
E
F
G
H
I
H
K
D
F
J
K
L
M
G
G
M
Rev.2.0, 2019
7 / 13
WMx07N80M3
Mechanical Dimensions for TO-263
COMMON DIMENSIONS
MM
SYMBOL
MIN
4.37
1.17
2.49
0.70
1.17
0.30
8.45
6.60
9.86
7.06
MAX
4.89
1.42
2.89
0.96
1.47
0.53
8.90
—
A
A1
A2
b
b1
c
D1
D4
E
10.40
—
E5
e
2.54BSC
H
14.70
1.07
2.00
1.40
15.50
1.47
2.70
1.70
H2
L
L1
L4
θ
0.25BSC
0°
9°
Rev.2.0, 2019
8 / 13
WMx07N80M3
Mechanical Dimensions for TO-262
COMMON DIMENSIONS
MM
SYMBOL
MIN
4.37
1.17
2.49
0.71
1.07
0.28
23.20
8.45
6.00
9.86
7.06
MAX
4.90
1.42
2.89
0.96
1.47
0.53
24.02
8.90
—
A
A1
A2
b
b2
c
D
D1
D2
E1
E4
e
10.40
—
2.54BSC
G
1.25
—
1.50
1.50
14.16
4.00
1.58
H2
L
13.33
3.50
1.28
L1
L3
Rev.2.0, 2019
9 / 13
WMx07N80M3
Mechanical Dimensions for TO-220
COMMON DIMENSIONS
MM
SYMBOL
MIN
9.70
3.40
8.90
1.17
2.60
15.10
MAX
10.20
3.80
A
B
C
D
E
F
G
H
I
9.40
1.47
3.40
16.70
19.55MAX
2.54REF
0.70
9.35
4.30
1.20
0.40
2.20
0.95
J
11.00
4.77
1.45
0.65
2.60
K
L
M
N
Rev.2.0, 2019
10 / 13
WMx07N80M3
Mechanical Dimensions for TO-252
COMMON DIMENSIONS
MM
SYMBOL
MIN
6.40
5.13
0.88
5.90
0.68
0.68
MAX
6.80
5.50
1.28
6.22
1.10
0.91
A
B
C
D
E
F
G
H
I
2.29REF
2.90REF
0.85
1.17
J
0.51REF
K
L
2.10
0.40
2.50
1.00
Rev.2.0, 2019
11 / 13
WMx07N80M3
Mechanical Dimensions for TO-251
COMMON DIMENSIONS
MM
SYMBOL
MIN
6.40
5.13
0.88
5.90
0.68
0.68
MAX
6.80
5.50
1.28
6.22
1.10
0.91
A
B
C
D
E
F
G
H
I
2.29REF
9.00
0.85
0.40
2.10
9.65
1.17
0.61
2.50
J
K
Rev.2.0, 2019
12 / 13
WMx07N80M3
Ordering Information
Part
Package
TO-220F
TO-263
TO-252
TO-251
TO-220
TO-262
Marking
Packing method
Tube
WML07N80M3
WMM07N80M3
WMO07N80M3
WMP07N80M3
WMK07N80M3
WMN07N80M3
WML07N80M3
WMM07N80M3
WMO07N80M3
WMP07N80M3
WMK07N80M3
WMN07N80M3
T
a
pe and Reel
T
a
pe and Reel
Tube
Tube
Tube
Marking Information
Wayon Logo
Wayon
WMO07N80M3
WWXX FPY
Part Number
Manufacturing Code
Contact Information
No.1001, Shiwan(7) Road, Pudong District, Shanghai, P.R.China.201202
Tel: 86-21-50310888 Fax: 86-21-50757680 Email: market@way-on.com
For additional information, please contact your local Sales Representative.
® is registered trademarks of Wayon Corporation.
Disclaimer
WAYON reserves the right to make changes without further notice to any Products herein to improve reliability, function,
or design. The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear
power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. The information given in this document shall in no event be regarded as a
guarantee of conditions or characteristics. WAYON does not assume any liability for infringement of patents, copyrights,
or other intellectual property rights of third parties by or arising from the use of Products or technical information described
in this document.
Rev.2.0, 2019
13 / 13
