Wayon-WML26N65C4
| Part # | Wayon-WML26N65C4 |
Download  | Wayon-WML26N65C4 |
WML26N65C4, WMO26N65C4, WMK26N65C4
WMN26N65C4, WMM26N65C4, WMJ26N65C4
650V 0.16
Ω
Super Junction Power MOSFET
Descri
ption
WMOS
TM
C4 is Wayon’s 4
th
generation super
junction MOSFET family that is utilizing charge
balance technology for extremely low on-resistance
and low gate charge performance. WMOS
TM
C4 is
suitable for applications which require superior
power density and outstanding efficiency.
S
D
S
G
D
G
S
D
G
TO-220F
TO-262
TO-220
D
D
S
S
Feature
s
G
S
G
D
G
TO-263
TO-247
TO-252
V
DS
=700V @ T
j,max
Typ. R
DS(on)
=0.16
Ω
100% UIS tested
RoHS
Pb-free plating, Halogen free
compliant
Applica
tions
LED Lighting, Charger, Adapter, PC, LCD TV, Server
Absolute Maximum Ratings
Parameter
Symbol
V
DSS
I
D
WMK/WMM/WMN/WMJ/WMO
WML
Uni
V
Drain-source voltage
650
Continuous drain current
1)
( T
C
= 25°C )
( T
C
= 100°C )
18
10.5
40
A
A
Pulsed drain current
2)
Gate-source voltage
I
DM
V
GS
E
AS
E
AR
I
AR
A
±30
V
Avalanche energy, single pulse
3)
Avalanche energy, repetitive
2)
Avalanche current, repetitive
2)
Power dissipation ( T
C
= 25°C )
210
mJ
mJ
A
0.3
2.5
P
D
135
31
W
– Derate above 25°C
1.08
-55 to +150
18
0.25
W/°C
°C
A
Operating and storage temperature range
Continuous diode forward current
Diode pulse current
T
j
, T
stg
I
S
I
S,pulse
40
A
Thermal Characteristics
Parameter
Symbol
R
θ
JC
WMK/WMM/WMN/WMJ/WMO
WML
4
Unit
°C/W
°C/W
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
0.9
62
R
θ
JA
80
Rev.2.1, 2019
Doc.W0865051
1 / 13
WMx26N65C4
Electrical Characteristics
T
c
= 25°C, unless otherwise noted
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=650 V, V
GS
=0V,
T
j
= 25°C
650
2
–
–
V
V
3
4
μ
A
–
–
–
–
–
–
–
30
–
1
–
T
j
= 125°C
Gate leakage current, forward
Gate leakage current, reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
GS
=10 V, I
D
=6A
T
j
= 25°C
100
-100
nA
nA
–
R
DS(on)
0.16
0.19
Ω
Dynamic characteristics
Input capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DS
= 100V, V
GS
= 0V,
f = 1 MHz
–
–
–
–
–
–
–
1310
48
–
–
–
–
–
–
–
pF
ns
Output capacitance
Reverse transfer capacitance
Turn-on delay time
1.5
31
V
DD
= 300V, I
D
= 15A
R
G
= 25
Ω
, V
GS
=10V
Rise time
37
Turn-off delay time
t
d(off)
t
f
97
Fall time
31
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
V
DD
=480V, I
D
=15A,
V
GS
=0 to 10V
–
–
–
–
6.8
6.8
–
–
–
–
nC
V
Q
g
22.1
5.6
Gate plateau voltage
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
plateau
V
SD
t
rr
V
GS
=0 V, I
F
=6A
V
R
=50V, I
F
=15A,
dI
F
/dt=100A/
μ
s
–
–
–
–
–
1.2
V
ns
μ
C
A
241
3.3
–
–
–
Q
rr
I
rrm
25.5
Notes:
1. Limited by T
j max
. Maximum duty cycle D=0.5.
2. Repetitive rating: pulse width limited by maximum junction temperature.
3. I
AS
= 2.5 A, V
DD
= 50V, R
G
= 25
Ω
, starting T
j
= 25°C.
Rev.2.1, 2019
2 / 13
WMx26N65C4
40
40
35
30
25
20
15
10
5
Common Source
T
c
= 25
°
C
V
DS
=20 V
Pulse test
Common Source
T
c
= 25
°
C
Pulse test
V
GS
=10V
V
GS
=7V
35
30
25
20
15
10
5
V
GS
=6V
V
GS
=5.5V
V
GS
=5V
V
GS
=4.5V
0
0
0
4
8
12
16
3
4
5
6
7
8
9
V
DS
(V)
V
GS
(V)
Figure 1.On-Region Characteristics
Figure 2. Transfer Characteristics
0.3
100
0.25
10
1
V
GS
= 10V
0.2
0.15
0.1
T
c
= 25°C
Pulse test
T
c
= 25°C
Pulse test
0.1
0
5
10
15
I
D
(A)
20
25
30
35
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
V
SD
(V)
Figure 3. Static Drain-Source On Resistance
Figure 4. Body- Diode Forward Characteristics
1.2
3
2.5
2
1.1
1
1.5
1
0.9
V
GS
=10 V
I
DS
=6 A
Pulse test
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
0.5
0
0.8
‐
60
‐
40
‐
20
0
20
40
60
80 100
120 140 160
‐
60
‐
40
‐
20
0
20
40
60
80 100
120 140 160
Temperature T
j
(°C)
Temperature T
j
(°C)
Figure 5. Normalized BV
DSS
vs. Temperature
Rev.2.1, 2019
Figure 6. Normalized R
DS(on)
vs. Temperature
3 / 13
WMx26N65C4
10000
1000
100
10
1.3
1.2
1.1
1
C
iss
Notes:
f = 1 MHz
V
GS
=0 V
C
oss
0.9
0.8
0.7
0.6
0.5
C
rss
I
DS
=0.25 mA
Pulse test
1
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
0.1
‐
60
‐
40
‐
20
0
20
40
60
80 100
120 140 160
0
100
200
300
400
500
600
Temperature T
j
(°C)
V
DS
(V)
Figure 7. Threshold Voltage vs. Temperature
Figure 8. Capacitance Characteristics
160
140
120
100
80
35
30
25
20
15
10
5
60
40
20
0
0
0
40
80
120
160
0
40
80
120
160
Temperature T
c
(
°
C)
Temperature T
c
(
°
C)
Figure 9. Power Dissipation
Figure 10. Power Dissipation (TO-220F)
100
100
Limited by R
DS(on)
Limited by R
DS(on)
10us
10us
10
10
1
100us
1ms
100us
1ms
DC
1
0.1
DC
Notes:
T
c
= 25
°
C
0.1
Notes:
T
c
= 25
°
C
T
j
= 150
°
C
T
j
= 150
°
C
Single Pulse
Single Pulse
0.01
0.01
1
10
100
1000
1
10
100
1000
V
DS
(V)
V
DS
(V)
Figure 11. Maximum Safe Operating Area
Rev.2.1, 2019
Figure 12. Maximum Safe Operating Area(TO-220F)
4 / 13
WMx26N65C4
1.0E+01
1.0E+01
1.0E+00
1.0E
‐
01
1.0E
‐
02
1.0E
‐
03
In descending order
D= 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1.0E+00
1.0E
‐
01
1.0E
‐
02
1.0E
‐
03
Duty = t/T
(t)=0.9
°
C/W Max.
Duty = t/T
Z
Z
(t)=4
°
C/W Max.
θ
JC
θ
JC
1.0E
‐
06
1.0E
‐
04
1.0E
‐
02
Pulse Width t (s)
1.0E+00
1.0E
‐
06
1.0E
‐
05
1.0E
‐
04
1.0E
‐
03
1.0E
‐
02
1.0E
‐
01
Pulse Width t (s)
Figure 13. Transient Thermal Response Curve (TO-220F)
Figure 14. Transient Thermal Response Curve
10
8
V
DS
=480V
V
DS
=120V
6
4
2
0
I
D
= 15A
0
5
10
15
Q
G
(nC)
20
25
Figure 15. Gate Charge Characteristics
Rev.2.1, 2019
5 / 13
WMx26N65C4
Gate Charge Test Circuit & Waveform
Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Rev.2.1, 2019
6 / 13
WMx26N65C4
Mechanical Dimensions for TO-220F
COMMON DIMENSIONS
MM
SYMBOL
H
A
MIN
9.96
15.10
3.03
12.64
1.18
0.70
MAX
10.36
16.10
3.38
I
A
B
C
D
E
F
C
13.28
1.58
0.95
G
H
I
2.54REF
E
F
L
4.50
2.34
4.90
2.74
J
15.57
16.17
K
L
6.70REF
M
G
G
2.56
0.40
2.85
2.96
0.65
3.45
M
L1
Rev.2.1, 2019
7 / 13
WMx26N65C4
Mechanical Dimensions for TO-263
COMMON DIMENSIONS
MM
SYMBOL
MIN
4.37
1.17
2.49
0.70
1.17
0.30
8.45
6.60
9.86
7.06
MAX
4.89
1.42
2.89
0.96
1.47
0.53
8.90
—
A
A1
A2
b
b1
c
D1
D4
E
10.40
—
E5
e
2.54BSC
H
14.70
1.07
2.00
1.40
15.50
1.47
2.70
1.70
H2
L
L1
L4
θ
0.25BSC
0°
9°
Rev.2.1, 2019
8 / 13
WMx26N65C4
Mechanical Dimensions for TO-262
COMMON DIMENSIONS
MM
SYMBOL
MIN
4.37
1.17
2.49
0.71
1.07
0.28
23.20
8.45
6.00
9.86
7.06
MAX
4.90
1.42
2.89
0.96
1.47
0.53
24.02
8.90
—
A
A1
A2
b
b2
c
D
D1
D2
E1
E4
e
10.40
—
2.54BSC
G
1.25
—
1.50
1.50
14.16
4.00
1.58
H2
L
13.33
3.50
1.28
L1
L3
Rev.2.1, 2019
9 / 13
WMx26N65C4
Mechanical Dimensions for TO-220
COMMON DIMENSIONS
MM
SYMBOL
MIN
9.70
3.40
8.90
1.17
2.60
15.10
MAX
10.20
3.80
A
B
C
D
E
F
G
H
I
9.40
1.47
3.40
16.70
19.55MAX
2.54REF
0.70
9.35
4.30
1.20
0.40
2.20
0.95
J
11.00
4.77
1.45
0.65
2.60
K
L
M
N
Rev.2.1, 2019
10 / 13
WMx26N65C4
Mechanical Dimensions for TO-247
COMMON DIMENSIONS
MM
SYMBOL
MIN
4.80
2.21
1.85
1.11
1.91
2.91
0.51
20.70
16.25
15.50
13.00
4.80
2.30
MAX
5.20
2.61
2.15
1.36
2.21
3.21
0.75
21.30
16.85
16.10
13.60
5.20
2.70
A
A1
A2
b
b2
b4
c
D
D1
E
E1
E2
E3
e
5.44BSC
L
19.62
—
20.22
4.30
3.80
7.30
L1
ØP
ØP1
S
3.40
—
6.15BSC
Rev.2.1, 2019
11 / 13
WMx26N65C4
Mechanical Dimensions for TO-252
COMMON DIMENSIONS
MM
SYMBOL
MIN
6.40
5.13
0.88
5.90
0.68
0.68
MAX
6.80
5.50
1.28
6.22
1.10
0.91
A
B
C
D
E
F
G
H
I
2.29REF
2.90REF
0.85
1.17
J
0.51REF
K
L
2.10
0.40
2.50
1.00
Rev.2.1, 2019
12 / 13
WMx26N65C4
Ordering Information
Part
Package
TO-220F
TO-220
TO-262
TO-263
TO-252
TO-247
Marking
Packing method
Tube
WML26N65C4
WMK26N65C4
WMN26N65C4
WMM26N65C4
WMO26N65C4
WMJ26N65C4
WML26N65C4
WMK26N65C4
WMN26N65C4
WMM26N65C4
WMO26N65C4
WMJ26N65C4
Tube
Tube
T
a
pe and Reel
T
a
pe and Reel
Tube
Marking Information
Wayon Logo
Wayon
WML26N65C4
WWXX FPY
Part Number
Manufacturing Code
Contact Information
No.1001, Shiwan(7) Road, Pudong District, Shanghai, P.R.China.201202
Tel: 86-21-50310888 Fax: 86-21-50757680 Email: market@way-on.com
For additional information, please contact your local Sales Representative.
® is registered trademarks of Wayon Corporation.
Disclaimer
WAYON reserves the right to make changes without further notice to any Products herein to improve reliability, function,
or design. The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear
power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. The information given in this document shall in no event be regarded as a
guarantee of conditions or characteristics. WAYON does not assume any liability for infringement of patents, copyrights,
or other intellectual property rights of third parties by or arising from the use of Products or technical information described
in this document.
Rev.2.1, 2019
13 / 13
