Wayon-WMO15N10T1

WMO15N10T1  

100V N-Channel Enhancement Mode Power MOSFET  

Description  

WMO15N10T1 uses advanced power trench technology that has  

been especially tailored to minimize the on-state resistance and yet  

maintain superior switching performance.  

D

S

G

Features  

TO-252  



V

DS

= 100V, I

D

= 14.6A  

R

R

DS(on)

< 105

mΩ @

V

GS

= 4.5V  

Green Device Available  









Low Gate Charge  

D

S

Advanced High Cell Density Trench Technology  

100% EAS Guaranteed  

RoHS  

compliant  

Applications  

G





Power Management Switches  

DC/DC Converters  

Absolute Maximum Ratings

（

T

A

= 25°C, unless otherwise noted

）  

Parameter  

Symbol  

V

DS  

Value  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

100  

±20  

V

GS  

V

T

C

=25°C  

14.6  

10  

I

D  

Continuous Drain Current  

A

T

C

=100°C  

Pulsed Drain Current

1  

I

DM  

EAS  

58  

A

Single Pulse Avalanche Energy

2  

Total Power Dissipation  

3.2  

41.7  

mJ  

W

P

D  

T

C

=25°C  

Operating Junction and Storage Temperature Range  

-55 to 150  

°C  

T

J

,

T

STG  

Therma

l Characteristics  

Parameter  

Symbol  

R

θJA  

Value  

Unit  

°C/W  

°C/W  

Thermal Resistance from Junction-to-Ambient

3  

Thermal Resistance from Junction-to-Case  

50  

3

R

θJC  

Rev.7.0, 2022  

Doc:W0803187  

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WMO15N10T1  

Electrical Characteristics

（

T

J

= 25°C, unless otherwise noted

）  

Parameter  

Symbol  

Test Conditions  

Min. Typ. Max. Unit  

Static Characteristics  

V

(BR)DSS  

l

GSS  

Drain-Source Breakdown Voltage  

Gate-body Leakage current  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 0V, V

GS

= ±20V  

100  

–

–

–

±100  

1

V

–

nA  

T

J

=25°C  

T

J

=100°C  

–

–

Zero Gate Voltage Drain  

Current  

I

DSS  

V

GS(th)  

R

DS(on)  

g

fs  

V

DS

=100V, V

GS

= 0V  

μA  

V

–

–

100  

2.5  

90  

Gate-Threshold Voltage  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 5A  

V

GS

= 4.5V, I

D

= 3A  

V

DS

=5V , I

D

=5A  

1.2  

–

–

–

–

65  

75  

12  

Drain-Source on-Resistance

4  

Forward Transconductance

4  

mΩ  

S

105  

–

Dynamic Characteristics

5  

Input Capacitance  

C

iss  

C

oss  

C

rss  

R

g  

–

–

–

–

1220  

53  

–

–

–

–

V

Output Capacitance  

pF  

f =1MHz  

Reverse Transfer Capacitance  

Gate Resistance  

42  

f =1MHz  

1.3  

Ω

Switching Characteristics

5  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

–

–

–

20.6  

4

–

–

–

V

I

D

=5A  

Gate-Source Charge  

Gate-Drain Charge  

nC  

ns  

3.7  

t

d(on)  

Turn-On Delay Time  

–

4.7  

–

t

r  

t

d(off)  

t

f  

Rise Time  

–

–

–

21  

20  

16  

–

–

–

V

GS

=10V, V

DD

=50V,  

R

G

= 3

Ω

, I

D

= 5A  

Turn-Off Delay Time  

Fall Time  

Drain-Source Body Diode Characteristics  

Diode Forward Voltage

4  

V

SD  

I

S  

I

S

= 1A, V

GS

= 0V  

–

–

–

–

–

1.2  

V

A

Continuous Source Current  

T

C

=25°C  

14.6  

Notes:  

1. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C.  

2.The data tested by pulsed , pulse width

≤

300us , duty cycle

≤

2%  

3.The EAS data shows Max. rating . The test condition is V

DD

=25V,V

GS

=10V,L=0.1mH,I

AS

=8A  

4.The power dissipation is limited by 150°C junction temperature  

5.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

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WMO15N10T1  

Typical Characteristics  

20  

15  

10  

5

20  

V

GS

= 10V  

V

DS

= 5V  

V

GS

= 4.5V  

V

GS

= 3.5V  

15  

10  

5

V

GS

= 3V  

0

0

0

1

2

3

4

5

Gate−source voltag

3

e V

GS

(V)

4  

0

1

2

5

Drain−source voltage V

DS

(V)  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

10  

300  

250  

200  

150  

100  

50  

I

D

= 5A  

1

0.1  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

0

3

6

9

12  

15  

Gate−source voltage V

GS

(V)  

Source−drain voltage V

SD

(V)  

Figure 3. Forward Characteristics of Reverse  

Figure 4. R

DS(ON)

vs. V

GS  

150  

120  

90  

60  

30  

0

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

V

GS

= 4.5V  

V

GS

= 10V  

0

2

4

6

8

-50  

-25  

0

25  

50  

75  

100  

125  

150  

Temperature T

j

(

°

C

)  

Drain current I  

D

(A)  

Figure 5. R

DS(ON)

vs. I

D  

Figure 6. Normalized R

DS(on)

vs. Temperature  

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WMO15N10T1  

10  

8

10000  

1000  

100  

V

DS

= 50V  

I

D

= 5A  

Ciss  

6

Coss  

Crss  

4

10  

2

F=1.0MHz  

1

0

0

20  

40  

60  

80  

100  

0

5

10  

15  

20  

25  

Drain-

source voltage V

DS

（

V

）  

Q

g

−Toal Gate Charge

 

(nC)  

Figure 7. Capacitance Characteristics  

Figure 8. Gate Charge Characteristics  

50  

40  

30  

20  

10  

0

100  

10  

10μ

s  

100μ

s  

1ms  

1

DC  

10ms  

Limited by R

DS(on)  

0.1  

0.01  

Single Pulse  

T

C

=25

℃

 

T

J

=150

℃  

0

25  

50  

75  

100  

125  

150  

0.1  

1

10  

100  

1000  

Case Temperature T

C

(

°

C)  

Drain−source voltage V

DS

(V)  

Figure 9. Power Dissipation  

Figure10. Safe Operating Area  

10  

1

Duty = 1.0  

Duty = 0.5  

Duty = 0.2  

Duty = 0.1  

Duty = 0.05  

0.1  

Duty = 0.02  

Duty = 0.01  

0.01  

Single Pulse  

0.001  

0.000001  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

t, Pulse Width(S)  

Figure 11. Normalized Maximum Transient Thermal Impedance  

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WMO15N10T1  

Test Circuit  

V

GS  

Qg  

V

DS  

Qgs  

V

GS  

Qgd  

DUT  

I

G

=const  

Figure A. Gate Charge Test Circuit & Waveforms  

R

L

V

DS  

V

DD  

V

GS  

R

G

DUT  

V

GS  

Figure B. Switching Test Circuit & Waveforms  

L

V

DS  

I

D  

R

G

V

DD  

DUT  

V

GS  

tp  

Figure C. Unclamped Inductive Switching Circuit & Waveforms  

Rev.7.0, 2022  

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WMO15N10T1  

Mechanical Dimensions for TO-252  

COMMON DIMENSIONS  

MM  

SYMBOL  

A

B

MIN  

6.40  

5.13  

0.88  

5.90  

0.68  

0.68  

MAX  

6.80  

5.50  

1.28  

6.22  

1.10  

0.91  

K

A

B

C

D

E

F

G

H

I

E

I

L

J

2.29REF  

2.90REF  

G

F

0.85  

1.17  

J

0.51REF  

K

L

2.10  

0.40  

2.50  

1.00  

Rev.7.0, 2022  

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WMO15N10T1  

Ordering Information  

Part  

Package  

Marking  

Packing method  

WMO15N10T1  

TO-252  

15N10  

Tape and Reel  

Marking Information  

15N10 = Device code  

YWWXXX= Date code  

15N10  

YWWXXX  

Contact Information  

No.1001, Shiwan(7) Road, Pudong District, Shanghai, P.R.China.201207  

Tel: 86-21-50310888 Fax: 86-21-50757680 Email:

WAYON website:

http:/

For additional information, please contact your local Sales Representative.  

® is registered trademarks of Wayon Corporation.  

Disclaimer  

WAYON reserves the right to make changes without further notice to any Products herein to improve reliability, function,  

or design. The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear  

power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be  

expected to result in a personal injury. The information given in this document shall in no event be regarded as a guarantee  

of conditions or characteristics. WAYON does not assume any liability for infringement of patents, copyrights, or other  

intellectual property rights of third parties by or arising from the use of Products or technical information described in this  

document.  

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