Wayon-WMO80N08TS

WMO80N08TS  

80V N-Channel Enhancement Mode Power MOSFET  

Description  

WMO80N08TS uses advanced power trench technology that has been  

especially tailored to minimize the on-state resistance and yet maintain  

superior switching performance.  

D

S

G

Features  

TO-252  



V

DS

= 80V, I

D

= 80A  

R









Green Device Available  

Low Gate Charge  

D

Advanced High Cell Density Trench Technology  

100% EAS Guaranteed  

RoHS  

compliant  

Applications  

G







Synchronous Rectification  

DC/DC Converter  

Motor Control  

S

Absolute Maximum Ratings

（

Tc = 25°C, unless otherwise noted

）  

Parameter  

Symbol  

V

DS  

Value  

80  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

V

GS  

±20  

V

T

C

=25°C  

80  

Continuous Drain Current  

I

D  

A

T

C

=100°C  

50.6  

320  

Pulsed Drain Current

4  

I

DM  

EAS  

A

Single Pulse Avalanche Energy

3  

Total Power Dissipation  

204.8  

133  

mJ  

W

T

C

=25°C  

P

D  

Operating Junction and Storage Temperature Range  

-55 to +150  

°C  

T

J

,

T

STG  

Therma

l

Characteristics  

Parameter  

Symbol  

R

θ

JA  

Value  

42  

Unit  

Thermal Resistance from Junction-to-Ambient

1  

Thermal Resistance from Junction-to-Case  

°C/W  

°C/W  

R

θ

JC  

0.94  

Rev.1.0, 2021  

Doc:W0803525  

1 / 7  

WMO80N08TS  

Electrical Characteristics

（

Tc = 25°C, unless otherwise noted

）  

Parameter  

Symbol  

Test Conditions  

Min. Typ. Max. Unit  

Static Characteristics  

Drain-Source Breakdown Voltage  

Gate-body Leakage current  

V

(BR)DSS  

l

GSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 0V, V

GS

= ±20V  

80  

–

–

–

–

±100  

1

V

nA  

T

J

=25°C  

T

J

=55°C  

–

–

Zero Gate Voltage Drain  

Current  

I

DSS  

V

DS

=80V, V

GS

= 0V  

μA  

–

–

100  

4

Gate-Threshold Voltage  

Drain-Source on-Resistance

2  

Forward Transconductance

2  

Dynamic Characteristics  

Input Capacitance  

V

GS(th)  

R

DS(on)  

g

fs  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 20A  

V

DS

=10V , I

D

=20A  

2

–

3

9

76  

V

mΩ  

S

12  

–

–

C

iss  

C

oss  

C

rss  

–

–

–

4150  

220  

–

–

–

V

DS

= 40V, V

GS

=0V,  

f =1MHz  

Output Capacitance  

pF  

Reverse Transfer Capacitance  

Switching Characteristics  

Gate Resistance  

157  

V

DS

= 0V, V

GS

=0V,  

f =1MHz  

R

g  

Q

g  

–

–

–

–

1.1  

68.7  

16  

–

–

–

–

Ω

Total Gate Charge  

V

GS

= 10V, V

DS

= 40V,  

I

D

=20A  

Gate-Source Charge  

Q

gs  

Q

gd  

nC  

Gate-Drain Charge  

22.5  

Turn-On Delay Time  

t

d(on)  

–

35  

–

Rise Time  

t

r  

t

d(off)  

t

f  

–

–

–

75  

90  

30  

–

–

–

V

ns  

R

G

= 4.7

Ω

, I

D

= 20A  

Turn-Off Delay Time  

Fall Time  

Drain-Source Body Diode Characteristics  

Diode Forward Voltage

2  

V

SD  

I

S  

I

S

= 1A, V

GS

= 0V  

–

–

–

–

1

V

A

Continuous Source Current

1,5  

V

G

=V

D

=0V, Force Current  

80  

Notes:  

1.The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

≤

300us , duty cycle

≤

2%.  

3.The EAS data shows Max. rating . The test condition is V

DD

=40V, V

GS

=10V, L=0.4mH, I

AS

=32A.  

4.Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C.  

5.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

Rev.1.0, 2021  

2 / 7  

WMO80N08TS  

Typical Characteristics  

100  

80  

60  

40  

20  

0

100  

V

GS

= 10V  

V

DS

= 5V  

V

GS

= 5V  

V

GS

= 6V  

80  

60  

40  

20  

0

V

GS

= 4.5V  

V

GS

= 4V  

0

1

2

3

4

5

0

3

4

5

6

Drain−source voltage V

DS

(V)  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

100  

80  

60  

40  

20  

0

100  

I

D

= 20A  

10  

1

0.1  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

3

6

9

12  

15  

Gate−source voltage V

GS

(V)  

Source−drain voltage V

SD

(V)  

Figure 3. Forward Characteristics of Reverse  

Figure 4. R

DS(ON)

vs. V

GS  

20  

2.0  

1.5  

1.0  

0.5  

0.0  

15  

10  

5

V

GS

= 10V  

0

0

5

10  

15  

20  

25  

-50  

-25  

0

25  

50  

75  

100  

125  

150  

Drain current I  

D

(A)  

Temperature T

j

(

°C

)  

Figure 5. R

DS(ON)

vs. I

D  

Figure 6. Normalized R

DS(on)

vs. Temperature  

Rev.1.0, 2021  

3 / 7  

WMO80N08TS  

10  

8

100000  

10000  

1000  

V

DS

=

40V  

I

D  

= 20A  

Ciss  

6

Coss  

Crss  

4

100  

2

10  

F=1.0MHz  

0

1

0

40  

60  

80  

0

20  

40  

60  

80  

Drain-

source voltage V

DS

（

V

）  

Figure 7. Capacitance Characteristics  

Figure 8. Gate Charge Characteristics  

1000  

150  

120  

90  

60  

30  

0

10μ

s  

100  

10  

100μ

s  

1ms  

DC  

Limited by R

DS(on)  

10ms  

1

Single Pulse  

0.1  

0.01  

T

C

=25

℃

 

T

J

=150

℃  

0

25  

50  

75  

100  

125  

150  

0.1  

1

10  

100  

1000  

Case Temperature T

C

(

°

C)  

Drain−source voltage V

DS

(V)  

Figure 9. Power Dissipation  

Figure10. Safe Operating Area  

10  

1

Duty = 1.0  

Duty = 0.5  

Duty = 0.2  

Duty = 0.1  

Duty = 0.05  

0.1  

0.01  

Duty = 0.02  

Duty = 0.01  

Single Pulse  

0.001  

0.000001  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

t, Pulse Width(S)  

Figure 11. Normalized Maximum Transient Thermal Impedance  

Rev.1.0, 2021  

4 / 7  

WMO80N08TS  

Test Circuit  

V

GS  

Qg  

V

DS  

V

GS  

Qgs  

Qgd  

DUT  

I

G

=const  

Figure A. Gate Charge Test Circuit & Waveforms  

R

L

V

DS  

V

DD  

V

GS  

R

G  

DUT  

V

GS  

Figure B. Switching Test Circuit & Waveforms  

L

V

DS  

I

D  

R

G

V

DD  

DUT  

V

GS  

tp  

Figure C. Unclamped Inductive Switching Circuit & Waveforms  

Rev.1.0, 2021  

5 / 7  

WMO80N08TS  

Mechanical Dimensions for TO-252  

COMMON DIMENSIONS  

MM  

SYMBOL  

MIN  

6.40  

5.13  

0.88  

5.90  

0.68  

0.68  

MAX  

6.80  

5.50  

1.28  

6.22  

1.10  

0.91  

A

B

K

A

B

C

D

E

F

G

H

I

E

I

2.29REF  

2.90REF  

L

J

G

F

0.85  

1.17  

J

0.51REF  

K

L

2.10  

0.40  

2.50  

1.00  

Rev.1.0, 2021  

6 / 7  

WMO80N08TS  

Ordering Information  

Part  

Package  

Marking  

Packing method  

WMO80N08TS  

TO-252  

WMO80N08TS  

Tape and Reel  

Marking Information  

W

a

yon  

WMO80N08TS = Device code  

WWXX XXX=

 

Date code  

W

M

O

8

0

N08TS  

W

W

XX XXX  

Contact Information  

No.1001, Shiwan(7) Road, Pudong District, Shanghai, P.R.China.201207  

Tel: 86-21-50310888 Fax: 86-21-50757680 Email:

WAYON website:

http:/

For additional information, please contact your local Sales Representative.  

® is registered trademarks of Wayon Corporation.  

Disclaimer  

WAYON reserves the right to make changes without further notice to any Products herein to improve reliability, function,  

or design. The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear  

power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be  

expected to result in a personal injury. The information given in this document shall in no event be regarded as a guarantee  

of conditions or characteristics. WAYON does not assume any liability for infringement of patents, copyrights, or other  

intellectual property rights of third parties by or arising from the use of Products or technical information described in this  

document.  

Rev.1.0, 2021  

7 / 7