WeEn-Semiconductors-BT131-800D-112

Part #	WeEn-Semiconductors-BT131-800D-112
Download	WeEn-Semiconductors-BT131-800D-112

IMPORTANT NOTICE

10 December 2015

1. Global

joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset

Management Co. Ltd established Bipolar Power joint venture (JV),

WeEn Semiconductors

, which

will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown

below.

WWW

– For www.nxp.com use

www.ween-semi.com

– For salesaddresses@nxp.com use

salesaddresses@ween-semi.com

For the copyright notice at the bottom of each page (or elsewhere in the document, depending

on the version) “

NXP Semiconductors N.V.

{year}

” becomes “

WeEn

Semiconductors Co., Ltd.

{year}

”

If you have any questions related to this document, please contact our nearest sales office via e-

mail or phone (details via

salesaddresses@ween-semi.com

Thank you for your cooperation and understanding,

WeEn Semiconductors

BT131-800D

4Q Triac

4 October 2016

Product data sheet

1. General

description

Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package. This

very sensitive gate “series D” triac is intended for interfacing with low power drivers including

microcontrollers.

2. Features

and benefits

•

Direct interfacing to logic level ICs

•

Direct interfacing with low power gate drivers and microcontrollers

High blocking voltage capability

Planar passivated for voltage ruggedness and reliability

Very sensitive gate

Triggering in all four quadrants

3. Applications

•

Air conditioner indoor fan control

General purpose low power motor control

General purpose switching and phase control

4. Quick

reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

DRM

repetitive peak off-

state voltage

–

800

T(RMS)

TSM

RMS on-state current

full sine wave; T

lead

≤ 51

°C;

Fig. 1

;

Fig. 2

;

Fig. 3

–

non-repetitive peak on-

full sine wave; T

j(init)

= 25 °C;

state current

12.5

13.7

125

= 20 ms;

Fig. 4

;

Fig. 5

full sine wave; T

j(init)

= 25 °C;

= 16.7 ms

junction temperature

°C

Static characteristics

gate trigger current

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C;

Fig. 7

–

= 12 V; I

= 0.1 A; T2+ G-;

= 25 °C;

Fig. 7

= 12 V; I

= 0.1 A; T2- G-;

= 25 °C;

Fig. 7

WeEn Semiconductors

BT131-800D

4Q Triac

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

= 12 V; I

= 0.1 A; T2- G+;

= 25 °C;

Fig. 7

–

holding current

on-state voltage

= 12 V; T

= 25 °C;

Fig. 9

= 1.4 A; T

= 25 °C;

Fig. 10

–

1.3

1.2

1.5

Dynamic characteristics

/dt

rate of rise of off-state

= 536 V; T

= 125 °C; (V

–

V/µs

voltage

67% of V

DRM

); exponential waveform;

GT1(ext)

= 1 kΩ

com

/dt

rate of change of

= 400 V; T

= 125 °C; dI

com

commutating voltage

dt = 0.5 A/ms; I

= 1 A; gate open

circuit

5. Pinning

information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

main terminal 2

gate

sym051

main terminal 1

3 2 1

TO-92 (SOT54)

6. Ordering

information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BT131-800D

TO-92

plastic single-ended leaded (through hole) package; 3 leads

SOT54

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

2 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

7. Limiting

values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

DRM

repetitive peak off-state

voltage

–

800

T(RMS)

TSM

RMS on-state current

full sine wave; T

lead

≤ 51

°C;

Fig. 1

;

Fig. 2

;

Fig. 3

–

non-repetitive peak on-

state current

full sine wave; T

j(init)

= 25 °C; t

= 20 ms;

Fig. 4

;

Fig. 5

12.5

full sine wave; T

j(init)

= 25 °C; t

= 16.7 ms

= 10 ms; SIN

–

13.7

0.78

t for fusing

–

A²s

A/µs

/dt

rate of rise of on-state

current

= 10 mA

–

= 14 mA

= 10 mA

–

peak gate current

peak gate power

–

G(AV)

stg

–

average gate power

storage temperature

junction temperature

over any 20 ms period

–

0.1

150

125

-40

–

°C

003aab039

003aab042

1.2

51.2 °C

T(RMS)

(A)

T(RMS)

(A)

0.8

0.4

– 2

– 1

– 50

100

150

(°C)

surge duration (s)

lead

= 51.2 °C

f = 50 Hz; T

lead

= 51.2 °C

Fig. 1. RMS on-state current as a function of lead

temperature; maximum values

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

3 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

003aab038

1.5

lead(max)

tot

α =180°

(W)

(

°C)

120°

90°

60°

30°

0.5

125

0.2

0.4

0.6

0.8

1.2

(A)

T(RMS)

α = conduction angle

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

003aab041

TSM

(A)

T =

25 °C max

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

4 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

003aab040

TSM

(A)

T =

25 °C max

(

(2)

– 5

– 4

– 3

– 2

– 1

(s)

≤ 20 ms

(1) dI

/dt limit

(2) T2- G+ quadrant

Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

5 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

8. Thermal

characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

–

Unit

K/W

th(j-lead)

thermal resistance

from junction to lead

full cycle;

Fig. 6

half cycle;

Fig. 6

–

th(j-a)

thermal resistance

from junction to

ambient free air

printed circuit board mounted: lead

length 4 mm

150

003aab045

th(j-lead)

(K/W)

(1)

(2)

– 1

– 2

– 5

– 4

– 3

– 2

– 1

(s)

(1) Unidirectional (half cycle)

(2) Bidirectional (full cycle)

Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

6 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

9. Characteristics

Table 6. Characteristics

Symbol

Static characteristics

gate trigger current

Parameter

Conditions

Min

Typ

Max

Unit

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C;

Fig. 7

–

= 12 V; I

= 0.1 A; T2+ G-;

= 25 °C;

Fig. 7

= 12 V; I

= 0.1 A; T2- G-;

= 25 °C;

Fig. 7

= 12 V; I

= 0.1 A; T2- G+;

= 25 °C;

Fig. 7

latching current

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C;

Fig. 8

= 12 V; I

= 0.1 A; T2+ G-;

= 25 °C;

Fig. 8

= 12 V; I

= 0.1 A; T2- G-;

= 25 °C;

Fig. 8

= 12 V; I

= 0.1 A; T2- G+;

= 25 °C;

Fig. 8

holding current

= 12 V; T

= 25 °C;

Fig. 9

= 1.4 A; T

= 25 °C;

Fig. 10

–

1.3

1.2

0.7

1.5

on-state voltage

gate trigger voltage

= 12 V; I

= 0.1 A; T

= 25 °C;

Fig. 11

= 400 V; I

= 0.1 A; T

= 125 °C;

Fig. 11

0.2

–

0.3

0.1

–

off-state current

= 800 V; T

= 125 °C

0.5

Dynamic characteristics

/dt

com

/dt

rate of rise of off-state

= 536 V; T

= 125 °C; (V

voltage

67% of V

DRM

); exponential waveform;

GT1(ext)

= 1 kΩ

–

V/µs

µs

rate of change of

= 400 V; T

= 125 °C; dI

com

–

commutating voltage

dt = 0.5 A/ms; I

= 1 A; gate open

circuit

gate-controlled turn-on

= 1.5 A; V

= 800 V; I

= 0.1 A; dI

–

time

dt = 5 A/µs

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

7 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

003aab044

001aab100

GT(Tj)

GT(25°C)

L(25°C)

(1)

(2)

(3)

(4)

(3)

(2)

(1)

-50

100

150

100

150

T (°C)

(1) T2- G+

(2) T2- G-

(3) T2+ G-

Fig. 8. Normalized latching current as a function of

junction temperature

(4) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

001aab099

003aab037

(A)

H(25°C)

1.6

1.2

0.8

0.4

(1)

(2)

(3)

-50

100

150

0.4

0.8

1.2

1.6

T (°C)

(V)

= 0.92 V; R

= 0.4 Ω

(1) T

= 125 °C; typical values

(2) T

= 125 °C; maximum values

(3) T

= 25 °C; maximum values

Fig. 9. Normalized holding current as a function of

junction temperature

Fig. 10. On-state current as a function of on-state

voltage

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

8 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

003aab043

1.6

GT(Tj)

GT(25°C)

1.2

0.8

0.4

– 50

100

150

T (°C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

9 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

10. Package

outline

Fig. 12. Package outline TO-92 (SOT54)

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

10 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

Right to make changes

— WeEn Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

11. Legal

information

Suitability for use

— WeEn Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical

or safety-critical systems or equipment, nor in applications where failure

or malfunction of an WeEn Semiconductors product can reasonably

be expected to result in personal injury, death or severe property or

environmental damage. WeEn Semiconductors and its suppliers accept no

liability for inclusion and/or use of WeEn Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Data sheet status

Document

Product

Definition

status

[1][2]

status

[3]

Objective

[short] data

sheet

Development This

document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This

document contains data from the

preliminary specification.

Quick reference data

— The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Product

[short] data

sheet

Production

This document contains the product

specification.

Applications

— Applications that are described herein for any of these

products are for illustrative purposes only. WeEn Semiconductors makes

no representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

[1] Please

consult the most recently issued document before initiating or

completing a design.

Customers are responsible for the design and operation of their applications

and products using WeEn Semiconductors products, and WeEn

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the WeEn Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

[2] The

term ‘short data sheet’ is explained in section “Definitions”.

[3] The

product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

Definitions

WeEn Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using WeEn

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). WeEn does not accept any liability in this respect.

Draft

— The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. WeEn Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet

— A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local WeEn

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Limiting values

— Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Product specification

— The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

WeEn Semiconductors and its customer, unless WeEn Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the WeEn Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

No offer to sell or license

— Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control

— This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Disclaimers

Non-automotive qualified products

— Unless this data sheet expressly

states that this specific WeEn Semiconductors product is automotive

qualified, the product is not suitable for automotive use. It is neither qualified

nor tested in accordance with automotive testing or application requirements.

WeEn Semiconductors accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

Limited warranty and liability

— Information in this document is believed

to be accurate and reliable. However, WeEn Semiconductors does not

give any representations or warranties, expressed or implied, as to the

accuracy or completeness of such information and shall have no liability for

the consequences of use of such information. WeEn Semiconductors takes

no responsibility for the content in this document if provided by an information

source outside of WeEn Semiconductors.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without WeEn Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

WeEn Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies WeEn Semiconductors for

any liability, damages or failed product claims resulting from customer

design and use of the product for automotive applications beyond WeEn

Semiconductors’ standard warranty and WeEn Semiconductors’ product

specifications.

In no event shall WeEn Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including – without limitation –

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, WeEn Semiconductors’ aggregate and cumulative liability

towards customer for the products described herein shall be limited in

accordance with the

Terms and conditions of commercial sale

of WeEn

Semiconductors.

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

11 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

Translations

— A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

12 / 13

WeEn Semiconductors

BT131-800D

4Q Triac

12. Contents

1. General

description……………………………………………..

2. Features

and benefits………………………………………….. 1

3. Applications…………………………………………………………

4. Quick

reference data…………………………………………….1

5. Pinning

information………………………………………………2

6. Ordering

information…………………………………………….2

7. Limiting

values……………………………………………………. 3

8. Thermal

characteristics……………………………………….. 6

9. Characteristics…………………………………………………….

10. Package

outline……………………………………………….. 10

11. Legal

information…………………………………………….. 11

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 4 October 2016

BT131-800D

All information provided in this document is subject to legal disclaimers.

Product data sheet

4 October 2016

13 / 13

WeEn-Semiconductors-BT131-800D-112

Related Posts

CUI-CPE-171

DB-Unlimited-TP243408-1

DB-Unlimited-TE054003-2