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IMPORTANT NOTICE
10 December 2015
1. Global
joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors
, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}
. All rights reserved
” becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}
. All rights reserved
”
If you have any questions related to this document, please contact our nearest sales office via e-
Thank you for your cooperation and understanding,
WeEn Semiconductors
F
0
2
2
–
O
T
BT138X-800
4Q Triac
1 May 2015
Product data sheet
1. General
description
Planar passivated four quadrant triac in a SOT186A (TO-220F) “full pack” plastic
package intended for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static switching.
2. Features
and benefits
High blocking voltage capability
High noise immunity
Isolated package
Less sensitive gate for improved noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
•
•
•
•
•
•
3. Applications
General purpose motor control
General purpose switching
•
•
4. Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
V
DRM
repetitive peak off-
state voltage
–
–
800
V
I
TSM
non-repetitive peak on-
full sine wave; T
j(init)
= 25 °C;
–
–
95
A
state current
T
j
junction temperature
RMS on-state current
–
–
–
–
125
12
°C
A
I
T(RMS)
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
–
–
5
8
35
35
mA
mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
NXP Semiconductors
BT138X-800
4Q Triac
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
–
10
35
mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
–
22
70
–
mA
Dynamic characteristics
dV
D
/dt rate
of rise of off-state
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
100
250
V/µs
voltage
of V
DRM
); exponential waveform; gate
open circuit
5. Pinning
information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
1
T1
T2
G
main terminal 1
main terminal 2
gate
T2
T1
G
2
sym051
3
mb
n.c.
mounting base; isolated
1
2 3
TO-220F (SOT186A)
6. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BT138X-800
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 “full pack”
SOT186A
BT138X-800/L02
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 “full pack”
SOT186A
7. Marking
Table 4.
Marking codes
Type number
Marking code
BT138X-800
BT138X-800
BT138X-800/L02
BT138X-800
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
2 / 13
NXP Semiconductors
BT138X-800
4Q Triac
8. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
Conditions
Min
Max
800
12
Unit
V
repetitive peak off-state voltage
RMS on-state current
–
–
I
T(RMS)
A
I
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
–
–
–
95
A
A
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
105
I
2
t
I
2
t for fusing
A
2
s
A/µs
A/µs
A/µs
A/µs
A
t
p
= 10 ms; sine-wave pulse
45
dI
T
/dt
rate of rise of on-state current
I
G
= 70 mA; T2+ G+
I
G
= 70 mA; T2+ G-
I
G
= 140 mA; T2- G+
I
G
= 70 mA; T2- G-
–
50
50
10
50
2
–
–
–
I
GM
peak gate current
peak gate power
–
P
GM
P
G(AV)
T
stg
T
j
–
5
W
average gate power
storage temperature
junction temperature
over any 20 ms period
–
0.5
150
125
W
-40
–
°C
°C
003aaj939
003aaj941
15
100
I
I
T(RMS)
(A)
T(RMS)
(A)
56 °C
12
80
60
40
20
9
6
3
0
-50
0
-2
-1
10
0
50
100
150
10
1
10
T
h
(°C)
surge duration (s)
f = 50 Hz; T
h
= 56 °C
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
BT138X-800
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
3 / 13
NXP Semiconductors
BT138X-800
4Q Triac
003aaj943
45
20
conduction form
T
P
h(max)
tot
angle,
(degrees)
factor
a
α
α
(°C)
61
(W)
16
°
α = 180
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
°
120
°
°
°
90
60
30
α
12
8
77
93
109
4
125
15
0
0
3
6
9
12
I
(A)
T(RMS)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
003aaj944
100
I
TSM
(A)
80
60
40
20
0
I
I
TSM
t
T
1/f
T
=
25
°
C max
j(init)
2
3
1
10
10
10
number of cycles (n)
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT138X-800
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
4 / 13
NXP Semiconductors
BT138X-800
4Q Triac
003aaj945
3
10
I
I
I
TSM
T
TSM
(A)
t
t
p
T
j(init)
= 25 °C max
2
10
(1)
(2)
10
-5
-4
-3
-2
-1
10
10
10
10
10
t (s)
p
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT138X-800
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
5 / 13
NXP Semiconductors
BT138X-800
4Q Triac
9. Thermal
characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-h)
thermal resistance
from junction to
heatsink
full or half cycle; with heatsink
–
–
4
K/W
full or half cycle; without heatsink
–
–
–
5.5
–
K/W
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
55
003aaj342
10
Z
th(j-h)
(K/W)
(1)
(2)
1
(3)
(4)
-1
-2
-3
10
10
10
P
t
t
p
-5
-4
-3
10
-2
10
-1
10
10
10
1
10
t
p
(s)
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6.
Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7.
Symbol
Isolation characteristics
Parameter
Conditions
Min
Typ
Max
Unit
V
isol(RMS)
RMS isolation voltage
from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
–
–
2500
V
C
isol
isolation capacitance
from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
–
10
–
pF
BT138X-800
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Product data sheet
1 May 2015
6 / 13
NXP Semiconductors
BT138X-800
4Q Triac
11. Characteristics
Table 8.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
–
–
–
–
–
–
–
–
5
35
35
35
70
40
60
40
60
mA
mA
mA
mA
mA
mA
mA
mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
8
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
10
22
7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
20
8
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
10
I
H
holding current
–
–
–
6
30
1.65
1
mA
V
V
T
V
GT
on-state voltage
gate trigger voltage
1.4
0.7
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
0.25
–
0.4
0.1
–
V
I
D
off-state current
V
D
= 800 V; T
j
= 125 °C
0.5
mA
Dynamic characteristics
dV
D
/dt rate
of rise of off-state
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
100
–
250
2
–
–
V/µs
µs
voltage
of V
DRM
); exponential waveform; gate
open circuit
t
gt
gate-controlled turn-on
I
TM
= 16 A; V
D
= 800 V; I
G
= 0.1 A; dI
G
/
time
dt = 5 A/µs
BT138X-800
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
7 / 13
NXP Semiconductors
BT138X-800
4Q Triac
003aaj947
003aaj946
3
3
I
I
GT
L
I
I
L(25°C)
(1)
(2)
GT(25°C)
2
2
(3)
(4)
(1)
(2)
(3)
1
0
1
(4)
0
-50
0
50
100
150
-50
0
50
100
150
T (°C)
j
T (°C)
j
(1) T2- G+
(2) T2- G-
(3) T2+ G-
Fig. 8.
Normalized latching current as a function of
junction temperature
(4) T2+ G+
Fig. 7.
Normalized gate trigger current as a function of
junction temperature
003aaj949
003aaj948
3
40
I
T
(A)
I
H
I
H(25°C)
30
20
10
0
2
1
(1)
(2) (3)
0
-50
0
0.5
1
1.5
2
2.5
(V)
0
50
100
150
T (°C)
j
V
T
V
o
= 1.145 V; R
s
= 0.031 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
Fig. 9.
Normalized holding current as a function of
junction temperature
(3) T
j
= 25 ��C; maximum values
Fig. 10.
On-state current as a function of on-state
voltage
BT138X-800
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Product data sheet
1 May 2015
8 / 13
NXP Semiconductors
BT138X-800
4Q Triac
003aaj950
1.6
V
GT
V
GT(25°C)
1.2
0.8
0.4
-50
0
50
100
150
T (°C)
j
Fig. 11.
Normalized gate trigger voltage as a function of junction temperature
BT138X-800
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
9 / 13
NXP Semiconductors
BT138X-800
4Q Triac
12. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 ‘full pack’
SOT186A
E
P
A
A
1
q
D
1
mounting
base
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
w
M
c
e
e
1
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
(1)
(2)
T
L
A
A
b
c
D
D
E
e
L
P
Q
q
w
b
b
e
j
K
L
1
UNIT
mm
2
1
1
1
2
1
max.
1.1
0.9
1.4
1.0
2.7
1.7
0.6 14.4
3.30
0.4 13.5
2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5
10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are
#
2.5 × 0.8 max. depth
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
02-04-09
06-02-14
SOT186A
3-lead TO-220F
Fig. 12.
Package outline TO-220F (SOT186A)
BT138X-800
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© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
10 / 13
NXP Semiconductors
BT138X-800
4Q Triac
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation –
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
13. Legal information
13.1 Data
sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Right to make changes
— NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Suitability for use
— NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
13.2 Definitions
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale
— NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
13.3 Disclaimers
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
BT138X-800
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Product data sheet
1 May 2015
11 / 13
NXP Semiconductors
BT138X-800
4Q Triac
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound
,
CoolFlux
,
CoReUse
,
DESFire
,
FabKey
,
GreenChip
,
HiPerSmart
,
HITAG
,
I²C-bus
logo,
ICODE
,
I-CODE
,
ITEC
,
MIFARE
,
MIFARE Plus
,
MIFARE Ultralight
,
SmartXA
,
STARplug
,
TOPFET
,
TrenchMOS
,
TriMedia
and
UCODE
— are trademarks of NXP
Semiconductors N.
V
.
HD Radio
and
HD Radio
logo — are trademarks of iBiquity Digital
Corporation.
BT138X-800
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
12 / 13
NXP Semiconductors
BT138X-800
4Q Triac
14. Contents
1
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
© NXP Semiconductors N.V. 2015. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 May 2015
BT138X-800
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
13 / 13
