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IMPORTANT NOTICE
10 December 2015
1. Global
joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors
, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}
. All rights reserved
” becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}
. All rights reserved
”
If you have any questions related to this document, please contact our nearest sales office via e-
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT150S-600R
SCR
1 November 2016
Product data sheet
1. General
description
Planar passivated SCR with sensitive gate in a TO252 (DPAK) surface mountable plastic package.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
2. Features
and benefits
•
Sensitive gate
•
•
•
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
Surface mountable package
3. Applications
•
•
General purpose switching
Protection Circuits
4. Quick
reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
DRM
repetitive peak off-
state voltage
–
–
600
V
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
repetitive peak reverse
voltage
–
–
–
–
–
–
–
–
–
–
–
–
600
2.5
4
V
average on-state
current
A
RMS on-state current
A
non-repetitive peak on-
half sine wave; T
j(init)
= 25 °C;
state current
35
A
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
38
A
T
j
junction temperature
125
°C
Static characteristics
I
GT
gate trigger current
–
–
15
50
200
–
µA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
V
DM
= 402 V; T
j
= 125 °C; R
GK
= 100 Ω;
V/µs
voltage
(V
DM
= 67% of V
DRM
); exponential
WeEn Semiconductors
BT150S-600R
SCR
[1] Although
not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/μs.
[2] Operation
above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
K
A
G
A
cathode
gate
mb
A
K
G
sym037
2
3
mb
mounting base; connected to
anode
2
1
3
DPAK (TO252N)
[1] It
is not possible to connect to pin 2 of the TO252 package.
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BT150S-600R
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads
TO252N
(one lead cropped)
7. Marking
Table 4. Marking codes
Type number
Marking code
BYV10ED-600P
BYV10ED-600P
©
BT150S-600R
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
2 / 12
WeEn Semiconductors
BT150S-600R
SCR
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state
voltage
–
600
V
V
RRM
repetitive peak reverse
voltage
–
600
V
I
T(AV)
–
–
2.5
4
A
A
I
T(RMS)
RMS on-state current
I
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
–
35
A
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
t
p
= 10 ms; SIN
–
–
–
38
6.1
50
A
I
2
t
I
2
t for fusing
A²s
A/µs
dI
T
/dt
rate of rise of on-state
current
I
T
= 10 A; I
G
= 50 mA; dI
G
/dt = 50 mA/µs
I
GM
peak gate current
–
–
2
5
A
V
V
RGM
peak reverse gate
voltage
P
GM
P
G(AV)
T
stg
T
j
peak gate power
–
5
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
–
0.5
150
125
-40
–
[1] Although
not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/μs.
[2] Operation
above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
©
BT150S-600R
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
3 / 12
WeEn Semiconductors
BT150S-600R
SCR
aaa-011899
5
a = 1.57
P
tot
(W)
1.9
4
3
2
1
0
2.2
2.8
4
conduction form
angle
factor
(degrees)
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
0
0.5
1
1.5
2
2.5
3
l
(A)
T(AV)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
aaa-012052
aaa-011910
5
12
I
T(RMS)
(A)
l
T(RMS)
(A)
111 °C
10
4
3
2
1
0
8
6
4
2
0
10
-2
-1
-50
0
50
100
150
10
1
10
T
(°C)
surge duration (s)
mb
f = 50 Hz; T
mb
= 111 °C
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 3. RMS on-state current as a function of surge
duration; maximum values
©
BT150S-600R
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
4 / 12
WeEn Semiconductors
BT150S-600R
SCR
aaa-011897
40
l
TSM
(A)
30
20
10
0
I
I
T
TSM
t
t
p
T
= 25 °C max
j(init)
2
3
1
10
10
10
number of cycles
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
aaa-011898
3
10
I
I
T
TSM
l
TSM
(A)
t
t
p
T
= 25 °C max
j(init)
(1)
2
10
10
-5
10
-4
-3
10
-2
10
10
t
p
(s)
t
p
≤ 10 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
©
BT150S-600R
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
5 / 12
WeEn Semiconductors
BT150S-600R
SCR
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
–
–
3
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
Device mounted on an FR4 Printed-
Circuit Board (PCB), single-sided
copper, tin-plated and standard
footprint
–
75
–
K/W
aaa-011909
10
Z
th(j-mb)
(K/W)
1
-1
10
10
P
t
t
p
-2
-5
-4
-3
-2
-1
10
10
10
10
10
1
10
t
p
(s)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
©
BT150S-600R
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
6 / 12
WeEn Semiconductors
BT150S-600R
SCR
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
I
GT
gate trigger current
I
L
Parameter
Conditions
Min
Typ
Max
Unit
–
–
–
–
–
15
200
10
6
µA
mA
mA
V
latching current
holding current
0.17
0.1
I
H
V
T
V
GT
on-state voltage
gate trigger voltage
1.23
0.4
1.8
1
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
V
V
D
= 600 V; I
T
= 0.1 A; T
j
= 110 °C;
0.1
0.2
–
V
I
D
I
R
off-state current
reverse current
V
D
= 600 V; T
j
= 125 °C
V
R
= 600 V; T
j
= 125 °C
–
–
0.1
0.1
0.5
0.5
mA
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
V
DM
= 402 V; T
j
= 125 °C; R
GK
= 100 Ω;
–
50
–
V/µs
voltage
(V
DM
= 67% of V
DRM
); exponential
t
gt
t
q
gate-controlled turn-on
I
TM
= 10 A; V
D
= 600 V; I
G
= 5 mA; dI
G
/
–
–
2
–
–
µs
µs
time
dt = 0.2 A/µs; T
j
= 25 °C
commutated turn-off
time
V
DM
= 402 V; T
j
= 125 °C; I
TM
= 8 A;
V
R
= 10 V; (dI
T
/dt)
M
= 10 A/µs; dV
D
/
100
dt = 2 V/µs; R
GK(ext)
= 1 kΩ; (V
DM
=
67% of V
DRM
)
aaa-011902
aaa-011903
3
3
I
I
L
GT
I
I
L(25°C)
GT(25°C)
2
2
1
0
1
0
-50
-50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
R
GK
= 1 kΩ
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Fig. 8. Normalized latching current as a function of
junction temperature
©
BT150S-600R
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
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WeEn Semiconductors
BT150S-600R
SCR
aaa-011904
aaa-011906
3
12
I
H
I
T
I
(A)
H(25°C)
2
8
4
0
1
(1)
(2)
(3)
0
-50
0
50
100
150
0
1
2
3
T (°C)
j
V (V)
T
R
GK
= 1 kΩ
V
o
= 1.26 V; R
s
= 0.099 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 9. Normalized holding current as a function of
junction temperature
Fig. 10. On-state current as a function of on-state
voltage
aaa-011905
aaa-011907
3
1.6
10
V
GT
dV /dt
D
(V/µs)
V
GT(25°C)
1.2
(1)
2
10
0.8
0.4
0
10
1
-50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
(1) R
GK
= 100 Ω
Fig. 11. Normalized gate trigger voltage as a function of
junction temperature
Fig. 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values
©
BT150S-600R
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
8 / 12
WeEn Semiconductors
BT150S-600R
SCR
11. Package
outline
Fig. 13. Package outline DPAK (TO252N)
©
BT150S-600R
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
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WeEn Semiconductors
BT150S-600R
SCR
Right to make changes
— WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12. Legal
information
Suitability for use
— WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Data sheet status
Document
Product
Definition
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Definitions
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Disclaimers
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
no responsibility for the content in this document if provided by an information
source outside of WeEn Semiconductors.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation –
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the
Terms and conditions of commercial sale
of WeEn
Semiconductors.
©
BT150S-600R
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
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WeEn Semiconductors
BT150S-600R
SCR
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
BT150S-600R
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Product data sheet
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WeEn Semiconductors
BT150S-600R
SCR
13. Contents
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 1 November 2016
©
BT150S-600R
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
1 November 2016
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