WeEn-Semiconductors-BTA2008W-600D-135

Part #	WeEn-Semiconductors-BTA2008W-600D-135
Download	WeEn-Semiconductors-BTA2008W-600D-135

BTA2008W-600D

3Q Hi-Com Triac

15 June 2016

Product data sheet

1. General

description

Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic

package. This “series D” triac balances the requirements of commutation performance and

gate sensitivity and is intended for interfacing with low power drivers and logic ICs including

microcontrollers.

2. Features

and benefits

•

3Q technology for improved noise immunity

•

Direct gate triggering from low power drivers and logic ICs

High commutation capability with sensive gate

High voltage capability

Planar passivated for voltage ruggedness and reliability

Surface mountable package

Triggering in three quadrants only

Very sensitive gate for easy logic level triggering

3. Applications

•

Low power motor controls

Small inductive loads e.g. solenoids, door locks, water valves

Small loads in large white goods

4. Quick

reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

DRM

repetitive peak off-

state voltage

–

600

T(RMS)

TSM

RMS on-state current

full sine wave; T

≤ 111

°C;

Fig. 1

;

Fig. 2

;

Fig. 3

–

0.8

non-repetitive peak on-

full sine wave; T

j(init)

= 25 °C;

state current

= 20 ms;

Fig. 4

;

Fig. 5

full sine wave; T

j(init)

= 25 °C;

= 16.7 ms

9.9

125

junction temperature

°C

Static characteristics

gate trigger current

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C;

Fig. 9

0.25

–

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

= 12 V; I

= 0.1 A; T2+ G-;

= 25 °C;

Fig. 9

0.25

–

= 12 V; I

= 0.1 A; T2- G-;

= 25 °C;

Fig. 9

0.25

–

holding current

on-state voltage

= 12 V; T

= 25 °C;

Fig. 11

= 0.85 A; T

= 25 °C;

Fig. 12

–

1.35

1.6

Dynamic characteristics

/dt

rate of rise of off-state

= 402 V; T

= 125 °C; (V

= 67%

200

0.5

–

V/µs

voltage

of V

DRM

); exponential waveform; gate

open circuit

com

/dt

rate of change of

commutating current

= 400 V; T

= 125 °C;

T(RMS)

= 0.8 A; dV

com

/dt = 10 V/µs;

gate open circuit

A/ms

5. Pinning

information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

main terminal 1

main terminal 2

gate

sym051

mounting base; connected to

main terminal 2

SC-73 (SOT223)

6. Ordering

information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BTA2008W-600D

SC-73

plastic surface-mounted package with increased heatsink; 4

leads

SOT223

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

2 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

7. Limiting

values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

DRM

repetitive peak off-state

voltage

–

600

T(RMS)

TSM

RMS on-state current

full sine wave; T

≤ 111

°C;

Fig. 1

;

Fig. 2

;

Fig. 3

–

0.8

non-repetitive peak on-

state current

full sine wave; T

j(init)

= 25 °C; t

= 20 ms;

Fig. 4

;

Fig. 5

full sine wave; T

j(init)

= 25 °C; t

= 16.7 ms

= 10 ms; SIN

–

9.9

t for fusing

0.41

100

A²s

A/µs

/dt

rate of rise of on-state

current

= 20 mA

peak gate current

peak gate power

–

G(AV)

stg

–

°C

average gate power

storage temperature

junction temperature

over any 20ms period

–

0.1

150

125

-40

–

003aag395

003aag396

T(RMS)

(A)

T(RMS)

(A)

111°C

0.8

0.6

0.4

0.2

-2

-1

-50

100

150

surge duration (s)

(°C)

f = 50 Hz; T

= 111 °C

Fig. 2. RMS on-state current as a function of lead

temperature; maximum values

Fig. 1. RMS on-state current as a function of surge

duration; maximum values

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

3 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

003aac118

1.0

conduction form

α = 180°

120°

tot

angle

factor

(W)

(degrees)

0.8

120

180

90°

2.8

2.2

1.9

1.57

60°

30°

0.6

0.4

0.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

(A)

T(RMS)

α = conduction angle

a = form factor = I

T(RMS)

/ I

T(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

003aag393

TSM

(A)

TSM

1/f

= 25 °C max

j(init)

number of cycles

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

4 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

003aag394

TSM

(A)

(1)

j(init)

= 25 °C max

-5

-4

-3

-2

-1

(s)

≤ 20 ms; (1) dI

/dt limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

5 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

8. Thermal

characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

th(j-sp)

thermal resistance

from junction to solder

point

full or half cycle;

Fig. 6

–

K/W

th(j-a)

thermal resistance

from junction to

ambient free air

in free air; printed-circuit board

mounted: minimum footprint;

Fig. 7

–

156

–

K/W

in free air; printed-circuit board

mounted; pad area;

Fig. 8

003aac210

th(j-sp)

(K/W)

-1

-2

-1

-4

-3

-2

-5

(s)

Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

6 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

3.8 min

1.5

min

4.5

4.6

6.3

1.5

min

(3×)

2.3

1.5

min

4.6

001aab508

All dimensions are in mm

Fig. 7. Minimum footprint SOT223

001aab509

All dimensions are in mm

Printed circuit board:

FR4 epoxy glass (1.6 mm thick), copper laminate

(35 um thick)

Fig. 8. Printed circuit board pad area: SOT223

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

7 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

9. Characteristics

Table 6. Characteristics

Symbol

Static characteristics

gate trigger current

Parameter

Conditions

Min

Typ

Max

Unit

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C;

Fig. 9

0.25

–

= 12 V; I

= 0.1 A; T2+ G-;

= 25 °C;

Fig. 9

0.25

= 12 V; I

= 0.1 A; T2- G-;

= 25 °C;

Fig. 9

0.25

latching current

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C;

Fig. 10

–

= 12 V; I

= 0.1 A; T2+ G-;

= 25 °C;

Fig. 10

= 12 V; I

= 0.1 A; T2- G-;

= 25 °C;

Fig. 10

holding current

= 12 V; T

= 25 °C;

Fig. 11

= 0.85 A; T

= 25 °C;

Fig. 12

–

on-state voltage

gate trigger voltage

1.35

0.9

1.6

1.5

= 12 V; I

= 0.1 A; T

= 25 °C;

Fig. 12

= 400 V; I

= 0.1 A; T

= 125 °C;

Fig. 12

0.2

–

0.3

0.1

–

off-state current

= 600 V; T

= 125 °C

0.5

Dynamic characteristics

/dt

rate of rise of off-state

= 402 V; T

= 125 °C; (V

= 67%

200

0.5

–

V/µs

voltage

of V

DRM

); exponential waveform; gate

open circuit

com

/dt

rate of change of

commutating current

= 400 V; T

= 125 °C;

T(RMS)

= 0.8 A; dV

com

/dt = 10 V/µs;

gate open circuit

A/ms

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

8 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

003aak510

003aaa959

L(25°C)

GT(25°C)

(1)

(2)

(3)

(2)

(1)

-50

– 50

100

150

100

T (°C)

(1) T2- G-

(2) T2+ G-

(3) T2+ G+

Fig. 10. Normalized latching current as a function of

junction temperature

Fig. 9. Normalized gate trigger current as a function of

junction temperature

003aak511

003aac114

(A)

0.8

H(25°C)

0.6

0.4

0.2

(2)

(3)

(1)

-50

0.5

1.5

100

150

(V)

T (°C)

= 0.835 V; R

= 0.50 Ω

(1) T

= 125 °C; typical values

(2) T

= 125 °C; maximum values

(3) T

= 25 °C; maximum values

Fig. 11. Normalized holding current as a function of

junction temperature

Fig. 12. On-state current as a function of on-state

voltage

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

9 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

10. Package

outline

Plastic surface-mounted package with increased heatsink; 4 leads

SOT223

detail X

4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.8

1.5

0.10 0.80

0.01 0.60

3.1

2.9

0.32

0.22

6.7

6.3

3.7

3.3

7.3

6.7

1.1

0.7

0.95

0.85

4.6

2.3

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

04-11-10

06-03-16

SOT223

SC-73

Fig. 13. Package outline SC-73 (SOT223)

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

10 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

11. Package

outline (minimized)

6.7

6.3

3.1

2.9

1.8

1.5

1.1

0.7

7.3

3.7

6.7 3.3

0.8

0.6

0.32

0.22

2.3

4.6

Dimensions in mm

04-11-10

Fig. 14. Package outline SC-73 (SOT223)

12. Soldering

3.85

3.6

3.5

0.3

1.3 1.2

(4×) (4×)

solder lands

solder resist

6.1

3.9

7.65

solder paste

occupied area

Dimensions in mm

2.3

1.2

(3×)

1.3

(3×)

6.15

sot223_fr

Fig. 15. Reflow soldering footprint for SC-73 (SOT223)

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

11 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

8.9

6.7

1.9

solder lands

solder resist

occupied area

6.2

8.7

Dimensions in mm

preferred transport

direction during soldering

1.9

(3×)

2.7

1.9

(2×)

1.1

sot223_fw

Fig. 16. Wave soldering footprint for SC-73 (SOT223)

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

12 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

Right to make changes

— WeEn Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

13. Legal

information

Suitability for use

— WeEn Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical

or safety-critical systems or equipment, nor in applications where failure

or malfunction of an WeEn Semiconductors product can reasonably

be expected to result in personal injury, death or severe property or

environmental damage. WeEn Semiconductors and its suppliers accept no

liability for inclusion and/or use of WeEn Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Data sheet status

Document

Product

Definition

status

[1][2]

status

[3]

Objective

[short] data

sheet

Development This

document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This

document contains data from the

preliminary specification.

Quick reference data

— The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Product

[short] data

sheet

Production

This document contains the product

specification.

Applications

— Applications that are described herein for any of these

products are for illustrative purposes only. WeEn Semiconductors makes

no representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

[1] Please

consult the most recently issued document before initiating or

completing a design.

Customers are responsible for the design and operation of their applications

and products using WeEn Semiconductors products, and WeEn

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the WeEn Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

[2] The

term ‘short data sheet’ is explained in section “Definitions”.

[3] The

product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

Definitions

WeEn Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using WeEn

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). WeEn does not accept any liability in this respect.

Draft

— The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. WeEn Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet

— A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local WeEn

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Limiting values

— Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Product specification

— The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

WeEn Semiconductors and its customer, unless WeEn Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the WeEn Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

No offer to sell or license

— Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control

— This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Disclaimers

Non-automotive qualified products

— Unless this data sheet expressly

states that this specific WeEn Semiconductors product is automotive

qualified, the product is not suitable for automotive use. It is neither qualified

nor tested in accordance with automotive testing or application requirements.

WeEn Semiconductors accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

Limited warranty and liability

— Information in this document is believed

to be accurate and reliable. However, WeEn Semiconductors does not

give any representations or warranties, expressed or implied, as to the

accuracy or completeness of such information and shall have no liability for

the consequences of use of such information. WeEn Semiconductors takes

no responsibility for the content in this document if provided by an information

source outside of WeEn Semiconductors.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without WeEn Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

WeEn Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies WeEn Semiconductors for

any liability, damages or failed product claims resulting from customer

design and use of the product for automotive applications beyond WeEn

Semiconductors’ standard warranty and WeEn Semiconductors’ product

specifications.

In no event shall WeEn Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including – without limitation –

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, WeEn Semiconductors’ aggregate and cumulative liability

towards customer for the products described herein shall be limited in

accordance with the

Terms and conditions of commercial sale

of WeEn

Semiconductors.

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

13 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

Translations

— A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

14 / 15

WeEn Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

14. Contents

1. General

description……………………………………………..

2. Features

and benefits………………………………………….. 1

3. Applications…………………………………………………………

4. Quick

reference data…………………………………………….1

5. Pinning

information………………………………………………2

6. Ordering

information…………………………………………….2

7. Limiting

values……………………………………………………. 3

8. Thermal

characteristics……………………………………….. 6

9. Characteristics…………………………………………………….

10. Package

outline……………………………………………….. 10

11. Package

outline (minimized)…………………………….. 11

12. Soldering………………………………………………………….

13. Legal

information…………………………………………….. 13

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 15 June 2016

BTA2008W-600D

All information provided in this document is subject to legal disclaimers.

Product data sheet

15 June 2016

15 / 15

WeEn-Semiconductors-BTA2008W-600D-135

Related Posts

CUI-CPE-171

DB-Unlimited-TP243408-1

DB-Unlimited-TE054003-2