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IMPORTANT NOTICE
10 December 2015
1. Global
joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors
, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}
. All rights reserved
” becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}
. All rights reserved
”
If you have any questions related to this document, please contact our nearest sales office via e-
Thank you for your cooperation and understanding,
WeEn Semiconductors
BUJ302AX
220F
–
TO
NPN power transistor
Rev. 02 — 28 March 2011
Product data sheet
1. Product
profile
1.1 General
description
High-voltage, high-speed planar-passivated NPN power switching transistor in a
SOT186A (TO-220F) plastic package.
1.2 Features
and benefits
Fast switching
Isolated package
High voltage capability
Low thermal resistance
1.3 Applications
DC-to-DC converters
Inverters
High-frequency electronic lighting
Motor control systems
ballast applications
1.4 Quick
reference data
Table 1.
Symbol
I
C
Quick reference data
Parameter
Conditions
Min Typ Max
Unit
collector current
see
Figure 1
; see
Figure 2
;
see
Figure 4
–
–
–
–
–
–
4
A
P
tot
total power
dissipation
T
h
≤
25 °C; see
Figure 3
26
W
V
CESM
collector-emitter
peak voltage
V
BE
= 0 V
1050 V
Static characteristics
h
FE
DC current gain
I
C
= 0.1 A; V
CE
= 5 V; T
h
= 25 °C;
see
Figure 11
48
25
66
42
100
50
I
C
= 0.8 A; V
CE
= 3 V; T
h
= 25 °C;
see
Figure 12
BUJ302AX
NXP Semiconductors
NPN power transistor
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
B
base
mb
C
2
C
collector
emitter
isolated
3
E
B
mb
n.c.
E
sym123
1
2 3
SOT186A (TO-220F)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT186A
BUJ302AX
TO-220F
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 “full pack”
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CESM
V
CEO
I
C
Parameter
Conditions
Min
Max
1050
400
4
Unit
collector-emitter peak voltage
collector-emitter voltage
collector current
V
BE
= 0 V
–
V
I
B
= 0 A
–
V
see
Figure 1
; see
Figure 2
; see
Figure 4
–
A
I
CM
peak collector current
base current
–
8
A
I
B
DC
–
2
A
I
BM
peak base current
total power dissipation
storage temperature
junction temperature
emitter-base voltage
–
4
A
P
tot
T
h
≤
25 °C; see
Figure 3
–
26
W
°C
°C
V
T
stg
T
j
-65
150
150
24
–
–
V
EBO
I
C
= 0 A; I
E
= 2 A; t
p
< 10 ms
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
2 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
003aag027
V
C
CC
10
I
C
L
(A)
V
CL(CE)
probe point
8
6
4
2
0
L
B
I
Bon
DUT
V
BB
001aab999
0
400
800
1200
(V)
V
CEclamp
Fig 1.
Reverse bias safe operating area
Fig 2.
Test circuit for reverse bias safe operating area
03aa13
120
P
der
(%)
80
40
0
0
50
100
150
200
T
h
(
°
C)
Fig 3.
Normalized total power dissipation as a function of heatsink temperature
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
3 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
001aac001
2
10
I
C
(A)
duty cycle = 0.01
10
I
CM(max)
II
(3)
t =
20
μ
s
p
I
C(max)
(1)
50
μ
s
100
μ
s
1
200
μ
s
500
μ
s
DC
(2)
−
1
10
I
(3)
−
2
10
III
(3)
−
3
10
2
3
1
10
10
10
V
(V)
CEclamp
1)Ptot maximum and Ptot peak maximum lines
2)Second breakdown limits
3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation
III = Extension during turn-on in single transistor converters
provided that RBE
≤
100
Ω
and tp
≤
0.6
μ
s
Fig 4.
Forward bias safe operating area for Tmb
≤
25 °C
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
4 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
5. Thermal
characteristics
Table 5.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to heatsink
with heatsink compound; see
Figure 5
–
–
4.8
K/W
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
55
–
K/W
001aag169
10
Z
th(j-h)
δ
= 0.5
(K/W)
0.2
0.1
1
0.05
0.02
0
t
−
1
−
2
−
3
p
10
10
10
P
δ
=
1/f
t
t
p
1/f
1
−
6
−
5
−
4
−
3
−
2
−
1
2
10
10
10
10
10
10
10 10
(s)
t
p
Fig 5.
Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation
characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
Conditions
Min
Typ
Max
Unit
RMS isolation voltage
50 Hz
≤
f
≤
60 Hz; RH
≤
65 %; T
h
= 25 °C;
from all terminals to external heatsink; clean
and dust free
–
–
2500
V
C
isol
isolation capacitance
from collector to external heatsink ; f = 1 MHz;
T
h
= 25 °C
–
10
–
pF
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
5 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
CES
collector-emitter cut-off
current
V
BE
= 0 V; V
CE
= 1050 V; T
j
= 25 °C
V
CE
= 400 V; I
B
= 0 A; T
h
= 25 °C
–
0.2
10
10
250
–
µA
µA
V
I
CEO
collector-emitter cut-off
current
–
V
(BR)EBO
V
CEOsus
V
CEsat
open-collector emitter-base
I
B
= 1 mA; I
C
= 0 A; T
h
= 25 °C
breakdown voltage
15
400
–
19
collector-emitter sustaining
voltage
I
B
= 0 A; I
C
= 10 mA; L
C
= 25 mH;
T
h
= 25 °C; see
Figure 6
; see
Figure 7
470
0.15
0.6
1.1
66
–
V
collector-emitter saturation
voltage
I
C
= 1 A; I
B
= 0.2 A; T
h
= 25 °C;
see
Figure 8
; see
Figure 9
0.5
1.5
1.5
100
50
V
I
C
= 3.5 A; I
B
= 1 A; T
h
= 25 °C;
see
Figure 8
; see
Figure 9
–
V
V
BEsat
h
FE
base-emitter saturation
voltage
I
C
= 3.5 A; I
B
= 1 A; T
h
= 25 °C;
see
Figure 10
–
V
DC current gain
I
C
= 0.1 A; V
CE
= 5 V; T
h
= 25 °C;
see
Figure 11
48
25
I
C
= 0.8 A; V
CE
= 3 V; T
h
= 25 °C;
see
Figure 12
42
Dynamic characteristics
t
s
t
f
storage time
fall time
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 60
Ω
; V
BB
= -5 V; T
h
= 25 °C;
resistive load; t
p
= 300 µs;
–
–
–
–
3.5
µs
ns
500
see
Figure 13
; see
Figure 14
I
C
50 V
100
Ω
to 200
Ω
(mA)
horizontal
oscilloscope
vertical
250
6 V
300
Ω
1
Ω
100
30 Hz to 60 Hz
001aab987
10
0
min
V
CE
(V)
V
CEOsus
001aab988
Fig 6.
Test circuit for collector-emitter sustaining
voltage
Fig 7.
Oscilloscope display for collector-emitter
sustaining voltage test waveform
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
6 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
003aaf994
003aaf996
10
6
4
2
0
1.4 A
1.2 A
1.0 A
0.8 A
V
I
CEsat
C
(V)
(A)
1
0.6 A
0.4 A
T =
125 °C
j
I
= 0.2 A
B
-1
-2
10
T =
25 °C
j
10
-2
-1
10
10
1
10
0
2
4
6
8
10
(V)
I
(A)
V
CE
C
Fig 8.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 9.
Collector current as a function of
collector-emitter voltage; typical values
003aaf993
003aaf992
2
1.2
10
V
= 5 V
V
CE
BEsat
(V)
1.0
h
FE
T =
25 °C
j
T =
25 °C
j
0.8
0.6
0.4
0.2
T =
125 °C
j
10
T =
125 °C
j
1
10
-2
-1
-2
-1
10
10
1
10
10
1
10
I
(A)
I (A)
C
C
Fig 10.
Base-emitter saturation voltage as a function of
collector current; typical values
Fig 11.
DC current gain as a function of collector
current; typical values
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
7 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
003aaf991
V
CC
2
10
V
= 3 V
CE
R
L
h
FE
V
t
IM
0
R
B
T =
25 °C
j
DUT
T =
125 °C
j
p
T
10
001aab989
1
10
-2
-1
10
1
10
I
(A)
C
Fig 12.
DC current gain as a function of collector
current; typical values
Fig 13.
Test circuit for resistive load switching
I
C
I
Con
90 %
90 %
10 %
t
t
f
t
s
I
B
t
on
t
off
I
Bon
10 %
t
t
≤
30 ns
r
−
I
Boff
001aab990
Fig 14.
Switching times waveforms for resistive load
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
8 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
8. Package
outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 ‘full pack’
SOT186A
E
P
A
A
1
q
D
1
mounting
base
T
D
j
L
L
2
1
K
Q
b
b
1
2
L
1
2
3
b
c
w
M
e
e
1
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
(1)
(2)
L
A
A
b
c
D
D
1
E
e
e
1
j
K
L
L
P
Q
q
T
w
b
b
UNIT
mm
2
1
1
1
2
max.
1.1
0.9
1.4
1.0
2.7
1.7
0.6 14.4
3.30
0.4 13.5
2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5
10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are
∅
2.5
×
0.8 max. depth
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
02-04-09
06-02-14
SOT186A
3-lead TO-220F
Fig 15.
Package outline SOT186A (TO-220F)
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
9 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
9. Revision
history
Table 8.
Revision history
Document ID
BUJ302AX v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20110328
Product data sheet
–
BUJ302AX v.1
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BUJ302AX v.1
19980801
Objective specification
–
–
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
10 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
10. Legal information
10.1 Data
sheet status
Document status
[1] [2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Suitability for use
— NXP Semiconductors products are not designed,
10.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
10.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Right to make changes
— NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale
— NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
11 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products
— Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Adelante
,
Bitport
,
Bitsound
,
CoolFlux
,
CoReUse
,
DESFire
,
EZ-HV
,
FabKey
,
GreenChip
,
HiPerSmart
,
HITAG
,
I²C-bus
logo,
ICODE
,
I-CODE
,
ITEC
,
Labelution
,
MIFARE
,
MIFARE Plus
,
MIFARE Ultralight
,
MoReUse
,
QLPAK
,
Silicon Tuner
,
SiliconMAX
,
SmartXA
,
STARplug
,
TOPFET
,
TrenchMOS
,
TriMedia
and
UCODE
— are trademarks of NXP B.V.
non-automotive qualified products in automotive equipment or applications.
HD Radio
and
HD Radio
logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
11. Contact
information
BUJ302AX
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
12 of 13
BUJ302AX
NXP Semiconductors
NPN power transistor
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
9
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics
. . . . . . . . . . . . . . . . . . .5
Isolation characteristics . . . . . . . . . . . . . . . . . . .5
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .10
10
Legal information. . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
10.1
10.2
10.3
10.4
11
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2011.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 March 2011
Document identifier: BUJ302AX
