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OT407
Four-quadrant triac, enhanced noise immunity
Rev. 01 — 19 May 2008
Product data sheet
1. Product
profile
1.1 General
description
Passivated sensitive gate triac in a SOT54A (wide pitch) plastic package
1.2 Features
I
Sensitive gate
I
Gate triggering in four quadrants
I
Direct interfacing to low power gate drive
circuits
I
Direct interfacing to logic level ICs
I
Enhanced immunity to voltage
I
High blocking voltage to 800 V
transients and noise
1.3 Applications
I
Home appliances
I
Low power motor control
I
Low power loads in industrial process
control
I
Low power AC fan speed controllers
1.4 Quick
reference data
I
V
DRM
≤
800 V
I
I
GT
≤
5 mA
I
I
TSM
≤
12.5 A (t = 20 ms)
I
I
T(RMS)
≤
1 A
I
I
GT
≤
7 mA (T2
−
G+)
2. Pinning
information
Table 1.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
main terminal 2 (T2)
gate (G)
T2
T1
G
2
3
main terminal 1 (T1)
sym051
3
2
1
SOT54A
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
3. Ordering
information
Table 2.
Ordering information
Type number
Package
Name
–
Description
plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
Version
OT407
SOT54A
4. Limiting
values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
Conditions
Min
Max
800
800
1
Unit
repetitive peak off-state voltage
repetitive peak reverse voltage
RMS on-state current
–
–
–
V
V
A
V
RRM
I
T(RMS)
full sine wave; T
lead
≤
38
°
C; see
Figure 4
and
5
I
TSM
non-repetitive peak on-state current
full sine wave; T
j
= 25
°
C prior to
surge; see
Figure 2
and
3
t = 20 ms
–
–
–
12.5
13.8
1.28
A
t = 16.7 ms
A
A
2
s
I
2
t
I
2
t for fusing
t
p
= 10 ms
dI
T
/dt
rate of rise of on-state current
I
TM
= 1 A; I
G
= 20 mA;
dI
G
/dt = 0.2 A/
µ
s
T2+ G+
T2+ G
−
T2
−
G
−
T2
−
G+
–
50
50
50
10
1
A/
µ
s
A/
µ
s
A/
µ
s
A/
µ
s
A
–
–
–
I
GM
peak gate current
peak gate power
–
P
GM
P
G(AV)
T
stg
T
j
–
2
W
average gate power
storage temperature
junction temperature
over any 20 ms period
–
0.1
+150
125
W
−
40
°
C
–
°
C
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
2 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
003aac259
2.0
conduction form
P
tot
angle
factor
a
(W)
(degrees)
1.6
1.2
0.8
0.4
0.0
30
60
90
120
180
4
α
= 180
°
2.8
2.2
1.9
1.57
α
120
°
90
°
60
°
30
°
0
0.2
0.4
0.6
0.8
1
1.2
I
T(RMS)
(A)
α
= conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
003aac260
16
I
TSM
(A)
12
8
I
I
TSM
t
T
4
1/f
= 25
°
C max
T
j(init)
0
1
10
10
2
10
3
number of cycles
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
3 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
003aac262
10
3
I
I
TSM
t
T
I
TSM
(A)
t
p
10
2
T
= 25
°
C max
j(init)
(1)
(2)
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
t
p
≤
20 ms
(1) dI
T
/dt limit
(2) T2
−
G+ quadrant limit
Fig 3.
Non-repetitive peak on-state current as a function of pulse width; maximum values
003aac263
003aac264
16
I
T(RMS)
(A)
1.2
I
T(RMS)
(A)
12
0.8
8
0.4
4
0
0
-50
10
-2
10
-1
1
10
0
50
100
150
lead
(
°
C)
T
surge duration (s)
f = 50 Hz
T
lead
= 38
°
C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of solder
point temperature; maximum values
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
4 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
5. Thermal
characteristics
Table 4.
Symbol
R
th(j-lead)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
full cycle; see
Figure 6
lead
–
–
60
K/W
R
th(j-a)
thermal resistance from junction to
full cycle; printed-circuit
–
150
–
K/W
ambient
board mounted; lead
length = 4 mm
003aac206
2
10
Z
th(j-lead)
(K/W)
10
1
P
−
1
10
t
t
p
−
2
10
−
5
−
4
−
3
−
2
−
1
10
10
10
10
1
10
10
t
(s)
p
Fig 6.
Transient thermal impedance from junction to lead as a function of pulse width
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
5 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
6. Static
characteristics
Table 5.
Static characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
I
GT
gate trigger current
Min
Typ
Max
Unit
V
D
= 12 V; I
T
= 0.1 A; see
Figure 8
T2+ G+
0.25
0.25
0.25
0.35
–
–
–
–
5
5
5
7
mA
mA
mA
mA
T2+ G
−
T2
−
G
−
T2
−
G+
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; see
Figure 10
T2+ G+
–
–
10
25
10
10
10
1.6
1.3
–
mA
mA
mA
mA
mA
V
T2+ G
−
–
–
T2
−
G
−
–
–
T2
−
G+
–
–
I
H
holding current
V
D
= 12 V; I
G
= 0.1 A; see
Figure 11
I
T
= 1 A; see
Figure 9
V
D
= 12 V; I
T
= 0.1 A; see
Figure 7
V
D
= V
DRM
; I
T
= 0.1 A; T
j
= 125
°
C
V
D
= V
DRM(max)
; T
j
= 125
°
C
–
–
V
T
V
GT
on-state voltage
gate trigger voltage
–
1.3
–
–
–
–
V
0.2
–
V
I
D
off-state current
0.5
mA
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
6 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
7. Dynamic
characteristics
Table 6.
Dynamic characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
dV
D
/dt
rate of rise of off-state voltage
V
DM
= 0.67V
DRM(max)
; T
j
= 110
°
C; exponential
20
–
–
V/
µ
s
waveform; gate open circuit
dV
com
/dt rate
of change of
commutating voltage
V
DM
= 400 V; T
j
= 110
°
C; I
TM
= 1 A;
dI
com
/dt = 0.44 A/ms
1
–
–
V/
µ
s
003aaa209
003aaa205
1.6
4
V
I
GT
GT
I
GT(25
°
C)
V
GT(25
°
C)
1.2
3
(1)
(2)
(3)
(4)
0.8
0.4
0
2
1
0
−5
0
0
50
100
150
−
50
0
50
100
150
T (
°
C)
j
T (
°
C)
j
(1) T2+
G+
(2) T2+
G
−
(3) T2
−
G
−
(4) T2
−
G+
Fig 7.
Normalized gate trigger voltage as a function
of junction temperature
Fig 8.
Normalized gate trigger current as a function
of junction temperature
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
7 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
003aac258
003aaa203
3
2
I
T
I
L
(A)
I
L(25
°
C)
1.6
2
1.2
0.8
(1)
(2)
(3)
1
0.4
0
0
−
50
0
0.4
0.8
1.2
1.6
2
0
50
100
150
V
T
(V)
T (
°
C)
j
V
o
= 1.254 V; R
s
= 0.31
Ω
(1) T
j
= 125
°
C; typical values
(2) T
j
= 125
°
C; maximum values
(3) T
j
= 25
°
C; maximum values
Fig 9.
On-state current as a function of on-state
voltage
Fig 10.
Normalized latching current as a function of
junction temperature
003aaa204
3
I
H
I
H(25
°
C)
2
1
0
−
50
0
50
100
150
T (
°
C)
j
Fig 11.
Normalized holding current as a function of junction temperature
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
8 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
8. Package
outline
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
SOT54A
c
E
A
L
d
L
b
2
1
e
1
e
D
2
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
L
2
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
3
2
mm
5.08
2.54
3
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
97-05-13
04-06-28
SOT54A
Fig 12.
Package outline SOT54A
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
9 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
9. Revision
history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
OT407_1
20080519
Product data sheet
–
–
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
10 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
10. Legal information
10.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
10.2 Definitions
Draft —
The document is a draft version onl
y
.
T
he content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes onl
y
.
N
XP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliabilit
y
.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
10.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, militar
y
,
a
ircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injur
y
,
d
eath or severe property or environmental
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
OT407_1
© NXP B.
V
.
2
008. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2008
11 of 12
OT407
NXP Semiconductors
Four-quadrant triac, enhanced noise immunity
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data. . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
7
8
9
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
1
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics. . . . . . . . . . . . . . . . . . .
5
Static characteristics. . . . . . . . . . . . . . . . . . . . .
6
Dynamic characteristics . . . . . . . . . . . . . . . . . .
7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
0
10
Legal information. . . . . . . . . . . . . . . . . . . . . . .
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
11
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
T
r
ademark
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
10.1
10.2
10.3
10.4
11
12
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . .
11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.
V
.
2
008.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 May 2008
Document identifier: OT407_1
