WEIDA-BT131-600T
| Part # | WEIDA-BT131-600T |
Download  | WEIDA-BT131-600T |
Jiangsu Weida Semiconductor Co., Ltd.
BT131 Series 1A Triacs
DESCRIPTION:
With low holding and latching current, BT131
Series triacs are especially recommended for
use on middle and small resistance type power
load.
MAIN FEATURES:
unit
SOT-223-3L
SOT-89-3L
symbol
I
T(RMS)
value
1
A
V
V
V
DRM
/V
RRM
V
TM
600/800
≤1.5
SOT-223-2L
TO-92
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Storage junction temperature range
Operating junction temperature range
T
stg
T
j
-40~150
-40~125
600/800
600/800
1
℃
℃
V
Repetitive peak off-state voltage (T
j
=25
℃
)
Repetitive peak reverse voltage (T
j
=25
℃
)
RMS on-state current
V
DRM
V
RRM
I
T(RMS)
V
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
16
A
I
2
t value for fusing (t
p
=10ms)
I
2
t
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
1.28
50
10
2
A
2
s
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
dI/dt
A/μs
Peak gate current
I
GM
A
Average gate power dissipation
Peak gate power
P
G(
A
V)
P
GM
0.5
5
W
W
1
PRODUCT DATA SHEET
Rev.1.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT131 Series 1A Triacs
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified)
Value
Parameter Test
Condition
Quadrant
Unit
T
3
5
D
5
Ⅰ-Ⅱ-Ⅲ
Ⅳ
mA
I
GT
V
D
=12V, R
L
=33Ω
MAX
10
V
GT
Ⅰ-Ⅱ-Ⅲ-Ⅳ
Ⅰ-Ⅱ-Ⅲ-Ⅳ
1.3
0.2
V
V
V
D
=V
DRM
V
GD
I
H
MIN
I
T
=100mA
MAX
5
5
7
5
mA
Ⅰ-Ⅲ-Ⅳ
Ⅱ
I
G
=1.2I
GT
I
L
MAX
MIN
mA
10
20
20
50
dV/dt
V
D
=0.66×V
DRM
T
j
=125
℃
Gate open
V/µs
STATIC CHARACTERISTICS
Symbol
Test Condition
Value
1.5
5
Unit
V
V
TM
I
TM
=1.4A t
p
=380μs
T
j
=25
℃
T
j
=25
℃
T
j
=125
℃
MAX
µA
I
DRM
I
RRM
V
DRM
= V
RRM
MAX
0.5
mA
THERMAL RESISTANCES
Symbol
Test Condition
Value
Unit
TO-92
60
℃
/W
R
th(j-c)
junction to case(AC)
SOT-89/SOT-223
SOT-223-2L
31
℃
/W
2
PRODUCT DATA SHEET
Rev.1.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT131 Series 1A Triacs
ORDERING INFORMATION
B T
1 3 1 – 6 0 0
D
Triacs
V
DRM
、
V
RRM
:
600
：
600V
800
：
800V
T
：
I
GT1-3
≤3mA
、
I
GT4
≤5mA
D
：
I
GT1-3
≤5mA
、
I
GT4
≤10mA
I
T(RMS)
:1A
Cycle Code
W D X Y
WD:WeiDa
X
：
year
ID
year
A
B
C
D
E
F
G
…
…
2018
2019 2020
2021
2022
2023
2024
Y
：
Code
code week
code week
code week
code week
A
B
C
D
E
F
G
H
I
1
2
N
O
P
Q
R
S
T
14
15
16
17
18
19
20
21
22
23
24
25
26
a
b
c
d
e
f
27
28
29
30
31
32
33
34
35
36
37
38
39
n
o
p
q
r
40
41
3
42
4
43
5
44
6
s
t
45
7
g
h
i
46
8
U
V
W
X
Y
Z
u
v
w
x
y
z
47
9
48
J
10
11
12
13
j
49
K
L
k
l
50
51
M
m
52
、
53
3
PRODUCT DATA SHEET
Rev.1.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT131 Series 1A Triacs
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Min. Typ. Max.
Inches
Typ.
Min.
Max.
0.071
0.004
0.122
0.031
0.013
0.264
0.146
A
A1
B
1.5
1.6
1.8
0.10
3.1
0.059
0.001
0.114
0.024
0.009
0.248
0.130
0.252
0.063
0.002
0.118
0.028
0.010
0.256
0.138
0.181
0.091
0.035
0.069
0.276
0.035
0.01 0.06
2.9
0.6
3.0
0.7
B1
C
0.8
0.22 0.25
0.32
6.7
D
6.3
3.3
6.5
3.5
4.6
2.3
0.9
1.75
7.0
0.9
E
3.7
F
6.8
F1
G
H
0.7
1.5
6.7
0.8
1.1
2.0
7.3
1.0
0.028
0.059
0.264
0.031
0.043
0.079
0.287
0.039
J
K
Dimensions
Ref.
Millimeters
Typ. Max.
Inches
Typ.
Min.
1.4
Min.
1.6 0.055
0.52 0.013
0.58 0.016
0.44 0.014
4.6 0.173
Max.
A
b
0.063
0.35
0.4
0.197
0.023
0.017
0.181
b1
c
0.35
4.4
D
D1
E
1.55
0.061
2.35
3.94
2.55 0.091
4.25 0.155
0.102
0.167
E1
e
1.500
3.000
0.060
0.118
e1
SOT-89-3L
L
0.9
1.1 0.035
0.047
4
PRODUCT DATA SHEET
Rev.1.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT131 Series 1A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.45
4.32
3.18
0.407
0.6
–
Max.
Min.
Max.
A
B
C
D
E
F
4.6
5.2
0.175 0.181 0.205
4.6
5.33
4.19
0.17
0.181
0.14
0.21
0.165
0.021
0.031
–
3.55
0.125
0.533 0.016
0.8
–
0.024
0
1.1
1.27
2.3
–
–
–
0.043
0.05
0.091
G
H
J
–
–
–
–
–
–
0.36
12.7
2.04
1.86
–
0.38
0.5
15
2.66
2.06
4.3
0.014 0.015
0.5
0.02
0.591
K
N
P
V
2.3
0.08
0.073
–
0.091 0.105
0.081
0.169
5
PRODUCT DATA SHEET
Rev.1.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT131 Series 1A Triacs
FIG.1:
Maximum power dissipation versus
FIG.2:
RMS on-state current versus case
RMS on-state current
temperature
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum values)
number of cycles
FIG.6:
Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
FIG.5:
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (dI/dt < 50A/μs)
6
PRODUCT DATA SHEET
Rev.1.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT131 Series 1A Triacs
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information.
7
PRODUCT DATA SHEET
Rev.1.0
2020
