WEIDA-BT136-800E
| Part # | WEIDA-BT136-800E |
Download  | WEIDA-BT136-800E |
Jiangsu Weida Semiconductor Co., Ltd.
BT136 Series 4A Triacs
DESCRIPTION:
With low holding and latching current, BT136
Series triacs are especially recommended for
use on middle and small resistance type power
load.
TO-220B
TO-126
SOT-82
TO-252-4R
TO-202-3
TO-220C
MAIN FEATURES:
unit
symbol
I
T(RMS)
value
4
A
V
V
V
DRM
/V
RRM
V
TM
600/800
≤1.7
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
T
stg
Value
-40~150
-40~125
600/800
600/800
4
Unit
Storage junction temperature range
Operating junction temperature range
℃
℃
V
T
j
Repetitive peak off-state voltage (T
j
=25
℃
)
Repetitive peak reverse voltage (T
j
=25
℃
)
RMS on-state current
V
DRM
V
RRM
I
T(RMS)
V
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
25
A
I
2
t value for fusing (t
p
=10ms)
I
2
t
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
3.1
50
10
A
2
s
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
dI/dt
A/μs
1
PRODUCT DATA SHEET
Rev.5.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT136 Series 4A Triacs
Peak gate current
I
GM
P
G(
A
V)
P
GM
2
0.5
5
A
Average gate power dissipation
Peak gate power
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified)
Value
Parameter Test
Condition
Quadrant
Unit
T
5
5
D
E
Ⅰ-Ⅱ-Ⅲ
Ⅳ
5
10
25
I
GT
mA
V
D
=12V,
R
L
=33Ω
MAX
10
1.3
0.2
10
10
15
V
GT
V
GD
I
H
Ⅰ-Ⅱ-Ⅲ-Ⅳ
Ⅰ-Ⅱ-Ⅲ-Ⅳ
V
V
V
D
=V
DRM
MIN
I
T
=100mA
MAX
5
8
20
20
35
mA
Ⅰ-Ⅲ-Ⅳ
Ⅱ
I
G
=1.2I
GT
I
L
MAX
MIN
mA
12
V
D
=0.66×V
DRM
T
j
=125
℃
dV/dt
10
20
50
V/µs
Gate open
STATIC CHARACTERISTICS
Symbol
Test Condition
Value
Unit
V
V
TM
I
TM
=5A t
p
=380μs
V
DRM
= V
RRM
T
j
=25
℃
T
j
=25
℃
T
j
=125
℃
MAX
MAX
1.7
5
µA
I
DRM
I
RRM
0.5
mA
THERMAL RESISTANCES
Symbol
Test Condition
Value
Unit
TO-252-4R
2.8
R
th(j-c)
junction to case(AC)
℃
/W
TO-220B(Non-Ins)/
TO-220C
2.6
2
PRODUCT DATA SHEET
Rev.5.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT136 Series 4A Triacs
TO-202-3
4.0
3.7
TO-126/SOT-82
ORDERING INFORMATION
B T
1 3 6 – 6 0 0
D
T
：
I
GT1-3
≤5mA
、
I
GT4
≤5mA
D
：
I
GT1-3
≤5mA
、
I
GT4
≤10mA
E
：
I
GT1-3
≤10mA
、
I
GT4
≤25mA
Triacs
V
DRM
、
V
RRM
:
600
：
600V
800
：
800V
I
T(RMS)
:4A
PACKAGE MECHANICAL DATA
Dimensions
Inches
Ref.
Millimeters
Typ.
Min.
2.2
Max.
2.4
Min.
0.087
0
Typ.
Max.
0.094
0.004
0.034
0.215
0.023
0.023
0.248
A
A2
B
0
0.1
0.66
5.1
0.86
5.46
0.58
0.58
6.3
0.026
0.201
0.018
0.017
0.232
B2
C
0.46
0.44
5.9
C2
D
D1
E
5.30REF
0.211REF
6.4
4.63
4.372
9.8
6.8
0.252
0.182
0.268
E1
G
4.772 0.172
0.188
0.409
0.048
0.065
H
10.4
1.21
1.65
0.386
0.043
0.053
L
1.09
1.35
L2
V1
V2
7°
7°
0°
6°
0°
6°
3
PRODUCT DATA SHEET
Rev.5.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT136 Series 4A Triacs
Dimensions
Ref.
Millimeters
Min. Typ.
Max.
Inches
Typ.
Min.
0.366
0.276
Max.
0.39
A
C
D
F
9.30
7.00
10.5
1.50
0.45
1.50
4.40
2
9.90
7.60
0.299
0.453
0.098
0.022
0.075
0.185
11.50 0.413
2.50
0.55
1.90
4.70
0.059
0.018
0.059
0.173
H
J
M
N
O
P
2.54
0.100
1.20
0.60
1.50
0.80
0.047
0.024
0.059
0.031
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
7.4
Max.
Min.
Max.
0.307
0.441
0.642
0.161
0.058
0.034
A
B
C
D
E
F
7.8
11.2
16.3
4.1
0.291
0.417
0.602
0.154
0.046
0.026
10.6
15.3
3.9
1.17
0.66
1.47
0.86
G
H
K
2.29
0.09
2.5
2.9
0.6
0.098
0.018
0.114
0.024
0.45
4
PRODUCT DATA SHEET
Rev.5.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT136 Series 4A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.3
Max.
Min.
0.169
0.028
0.018
0.048
0.087
0.35
Max.
0.177
0.035
0.024
A
B
4.5
0.9
0.7
C
0.45
1.23
2.2
0.6
C2
C3
D
1.30
1.32
2.6
0.051 0.052
0.102
8.9
9.9
0.39
E
9.9
10.1
2.54
3.39
10.3
6.9
0.39
0.398 0.406
0.272
F
6.3
0.248
G
0.1
H
28
29.8
1.102
1.173
L1
L2
L3
0.133
1.14
2.65
1.7
0.045
0.104
0.067
2.95
0.116
Φ
3.6
0.142
TO-220C
5
PRODUCT DATA SHEET
Rev.5.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT136 Series 4A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.4
Max.
4.6
Min.
Max.
A
B
4.47
0.173 0.176
0.181
0.61
0.46
1.21
2.4
0.88
0.7
0.024
0.018
0.035
C
0.50
1.27
0.02 0.028
C2
C3
D
1.32
2.72
9.7
0.048 0.050
0.052
0.094
0.339
0.386
0.258
0.107
0.382
0.409
0.274
8.6
E
9.8
10.4
6.95
F
6.55
G
2.54
3.75
0.1
H
28
29.8
1.102
1.173
L1
L2
L3
V1
0.148
1.14
2.65
1.7
0.045
0.104
0.067
0.116
2.95
45°
45°
TO-220B Non-Ins
FIG.1:
Maximum power dissipation versus
FIG.2:
RMS on-state current versus case
RMS on-state current
temperature
6
PRODUCT DATA SHEET
Rev.5.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT136 Series 4A Triacs
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum values)
number of cycles
FIG.5:
Non-repetitive surge peak on-state current
FIG.6:
Relative variations of gate trigger
for a sinusoidal pulse with width tp<20ms, and
current versus
junction temperature
corresponging value of I
2
t (
Ⅰ
–
Ⅱ
–
Ⅲ
:dI/dt
<
50A/μs;
Ⅳ
:dI/dt < 10A/μs)
FIG.7:
Relative variations of holding current
FIG.8:
Relative variations of latching current
7
PRODUCT DATA SHEET
Rev.5.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BT136 Series 4A Triacs
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information.
8
PRODUCT DATA SHEET
Rev.5.0
2020
