WEIDA-BT138-800D
| Part # | WEIDA-BT138-800D |
Download  | WEIDA-BT138-800D |
1
Jiangsu Weida Semiconductor Co., Ltd.
BT138 Series 12A Triacs
DESCRIPTION:
With low holding and latching current, BT138
Series triacs are especially recommended for
use on middle and small resistance type power
load.
TO-220B
TO-252-4R
（
Non-Ins
）
TO-220C
TO-220F
（
Ins
）
MAIN FEATURES:
symbol
I
T(RMS)
value
12
unit
A
V
DRM
/V
RRM
V
TM
600/800
≤1.6
V
V
TO-263
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
T
stg
Value
Unit
Storage junction temperature range
-40~150
-40~125
600/800
600/800
12
℃
℃
V
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25
℃
)
Repetitive peak reverse voltage (T
j
=25
℃
)
RMS on-state current
T
j
V
DRM
V
RRM
I
T(RMS)
V
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
I
2
t
120
45
A
I
2
t value for fusing (t
p
=10ms)
A
2
s
1
PRODUCT DATA SHEET
Rev.9.0
2020
2
Jiangsu Weida Semiconductor Co., Ltd.
BT138 Series 12A Triacs
Critical rate of rise of on-state current
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
50
10
2
(I
G
=2×I
GT
)
dI/dt
A/μs
Peak gate current
I
GM
A
Average gate power dissipation
Peak gate power
P
G(
A
V)
P
GM
0.5
5
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified)
3 Quadrants
：
Value
Parameter
Test Condition
Quadrant
Unit
SW
CW
35
BW
I
GT
V
GT
V
GD
I
H
10
50
mA
V
V
D
=12V, R
L
=33Ω
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅰ
–
Ⅱ
–
Ⅲ
MAX
1.3
0.2
40
V
D
=V
DRM
T
j
=125
℃
MIN
V
I
T
=100mA
MAX
10
30
40
60
70
80
mA
Ⅰ
–
Ⅲ
50
I
G
=1.2I
GT
I
L
MAX
MIN
mA
Ⅱ
60
V
D
=2/3V
DRM
T
j
=125
℃
dV/dt
200
500 1000
V/µs
Gate open
4 Quadrants
：
Value
Parameter
Test Condition
Quadrant
Unit
D
5
E
F
G
50
Ⅰ-Ⅱ-Ⅲ
Ⅳ
10
25
25
70
I
GT
mA
V
D
=12V, R
L
=33Ω
V
D
=V
DRM
MAX
10
100
V
GT
V
GD
I
H
Ⅰ-Ⅱ-Ⅲ-Ⅳ
Ⅰ-Ⅱ-Ⅲ-Ⅳ
1.3
0.2
V
V
MIN
I
T
=100mA
MAX
10
20
40
60
mA
2
PRODUCT DATA SHEET
Rev.9.0
2020
3
Jiangsu Weida Semiconductor Co., Ltd.
BT138 Series 12A Triacs
Ⅰ-Ⅲ-Ⅳ
10
20
30
40
50
70
70
I
G
=1.2I
GT
I
L
MAX
MIN
mA
Ⅱ
100
V
D
=0.66×V
DRM
T
j
=125
℃
dV/dt
20
50
100 200
V/µs
Gate open
STATIC CHARACTERISTICS
Symbol
Test Condition
T
j
=25
℃
Value
Unit
V
TM
I
TM
=15A t
p
=380μs
MAX
MAX
1.6
5
V
µA
T
j
=25
℃
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
=125
℃
1
mA
THERMAL RESISTANCES
Symbol
Test Condition
Value
Unit
TO-252-4R
1.8
TO-220B(Non-Ins)/ TO-220C
TO-220F
1.5
2.5
1.5
R
th(j-c)
junction to case(AC)
℃
/W
TO-263
ORDERING INFORMATION
B T
1 3 8 – 6 0 0
D
D
：
I
GT1-3
≤5mA
、
I
GT4
≤10mA
E
：
I
GT1-3
≤10mA
、
I
GT4
≤25mA
F
：
I
GT1-3
≤25mA
、
I
GT4
≤70mA
G
：
I
GT1-3
≤50mA
、
I
GT4
≤100mA
SW
：
I
GT1-3
≤10mA
Triacs
V
DRM
、
V
RRM
:
600
：
600V
800
：
800V
I
T(RMS)
:12A
CW
：
I
GT1-3
≤35mA
BW
：
I
GT1-3
≤50mA
3
PRODUCT DATA SHEET
Rev.9.0
2020
4
Jiangsu Weida Semiconductor Co., Ltd.
BT138 Series 12A Triacs
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.2
Max.
2.4
Min.
0.087
0
Max.
0.094
0.004
0.034
0.215
0.023
0.023
0.248
A
A2
B
0
0.1
0.66
5.1
0.86
5.46
0.58
0.58
6.3
0.026
0.201
0.018
0.017
0.232
B2
C
0.46
0.44
5.9
C2
D
D1
E
5.30REF
0.211REF
6.4
4.63
4.372
9.8
6.8
0.252
0.182
0.268
E1
G
4.772 0.172
0.188
0.409
0.048
0.065
H
10.4
1.21
1.65
0.386
0.043
0.053
L
1.09
1.35
L2
V1
V2
7°
7°
0°
6°
0°
6°
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.3
Max.
Min.
0.169
0.028
0.018
0.048
0.087
0.35
Max.
0.177
0.035
0.024
A
B
4.5
0.9
0.7
C
0.45
1.23
2.2
0.6
C2
C3
D
1.30
1.32
2.6
0.051 0.052
0.102
8.9
9.9
0.39
E
9.9
10.1
2.54
3.39
10.3
6.9
0.39
0.398 0.406
0.272
F
6.3
0.248
G
0.1
H
28
29.8
1.102
1.173
L1
L2
L3
Φ
0.133
1.14
2.65
1.7
0.045
0.104
0.067
2.95
0.116
3.6
0.142
TO-220C
4
PRODUCT DATA SHEET
Rev.9.0
2020
5
Jiangsu Weida Semiconductor Co., Ltd.
BT138 Series 12A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.4
Max.
4.6
Min.
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.274
A
B
4.47
0.173
0.024
0.018
0.048
0.094
0.339
0.386
0.258
0.176
0.61
0.46
1.21
2.4
0.88
0.7
C
0.50
1.27
0.02
C2
C3
D
1.32
2.72
9.7
0.050
8.6
E
9.8
10.4
6.95
F
6.55
G
2.54
3.75
0.1
H
28
29.8
1.102
1.173
L1
L2
L3
0.148
1.14
2.65
1.7
0.045
0.104
0.067
0.116
2.95
V1
45°
45°
TO-220B Non-Ins
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
Max.
4.9
Min.
Max.
A
B
4.5
0.74
0.47
2.45
2.6
0.177
0.193
0.8
0.83
0.65
2.75
3
0.029 0.031 0.033
C
0.019
0.096
0.102
0.346
0.386
0.252
0.026
0.108
0.118
0.366
0.41
C2
C3
D
8.8
9.3
E
9.8
10.4
6.8
F
6.4
0.268
G
2.54
3.63
0.1
H
28
29.8
1.102
0.045
1.173
L1
L2
L3
V1
0.148
1.14
2.65
1.7
0
0.067
0.116
3.3
45°
0.13
45°
TO-220F Ins
5
PRODUCT DATA SHEET
Rev.9.0
2020
6
Jiangsu Weida Semiconductor Co., Ltd.
BT138 Series 12A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
9.9
Max.
10.3
15.8
8.9
Min.
Max.
0.406
0.622
0.378
A
B
C
D
E
F
0.390
0.579
0.370
14.7
8.5
2.54
0.100
1.20
0.75
1.40
0.85
1.75
4.80
2.80
0.48
0.25
1.37
0.047
0.029
0.055
0.033
0.069
G
H
J
4.40
2.40
0.28
0
4.60
2.60
0.38
0.1
0.173 0.181 0.189
0.094 0.102 0.110
0.011 0.015 0.019
K
L
0
0.004 0.010
0.05 0.054
M
1.17
1.27
0.046
FIG.1:
Maximum power dissipation versus
FIG.2:
RMS on-state current versus case
RMS on-state current
temperature
6
PRODUCT DATA SHEET
Rev.9.0
2020
7
Jiangsu Weida Semiconductor Co., Ltd.
BT138 Series 12A Triacs
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum values)
number of cycles
FIG.5:
Non-repetitive surge peak on-state current
FIG.6:
Relative variations of gate trigger
for a sinusoidal pulse with width tp<20ms, and
current versus
junction temperature
corresponging value of I
2
t (
Ⅰ
–
Ⅱ
–
Ⅲ
:dI/dt
<
50A/μs;
Ⅳ
:dI/dt < 10A/μs)
FIG.7:
Relative variations of holding current
FIG.8:
Relative variations of latching current
versus junction temperature
versus junction temperature
7
PRODUCT DATA SHEET
Rev.9.0
2020
8
Jiangsu Weida Semiconductor Co., Ltd.
BT138 Series 12A Triacs
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information.
8
PRODUCT DATA SHEET
Rev.9.0
2020
