WEIDA-BTA41
| Part # | WEIDA-BTA41 |
Download  | WEIDA-BTA41 |
Jiangsu Weida Semiconductor Co., Ltd.
BTA41
Series
40A
Triacs
DESCRIPTION:
with high ability to withstand theshock loading of
large current,BTA41 series triacs provide high dv/dt
rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrants
products especially recommended for use on inductive
load.BTA41 provides insulation voltage rated at 2500V
RMS from all three terminals to external heatsink
complying with UL standards.
MAIN FEATURES
symbol
I
T(RMS)
value
40.0
unit
A
V
DRM
/V
RRM
600/800/1200/1600
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
T
stg
Value
-40~150
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25
℃
)
Repetitive peak reverse voltage (T
j
=25
℃
)
RMS on-state current
T
j
-40~125
V
DRM
V
RRM
I
T(RMS)
600/800/1200/1600
600/800/1200/1600
40
V
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
400
A
I
2
t value for fusing (t
p
=10ms)
I
2
t
dI/dt
I
GM
880
50
4
A
2
s
A/μs
A
Critical rate of rise of on-state current (I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
P
G(
A
V)
P
GM
1
W
10
W
1
PRODUCT DATA SHEET
Rev.37.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA41
Series
40A
Triacs
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified)
3 Quadrants
：
Symbol
I
GT
Test Condition
V
D
=12V, R
L
=33Ω
V
D
=V
DRM
T
j
=125
℃
Quadrant
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅰ
–
Ⅱ
–
Ⅲ
Value
50
Unit
mA
V
MAX
V
GT
1.3
0.2
60
V
GD
I
H
MIN
V
I
T
=100mA
I
G
=1.2I
GT
MAX
mA
Ⅰ
–
Ⅲ
80
I
L
MAX
MIN
mA
Ⅱ
100
V
D
=2/3V
DRM
T
j
=125
℃
dV/dt
1000
V/µs
Gate open
4 Quadrants
：
Symbol
Test Condition
Quadrant
Value
50
Unit
mA
mA
V
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
I
GT
V
D
=12V, R
L
=33Ω
MAX
70
V
GT
V
GD
I
H
ALL
1.3
0.2
60
V
D
=V
DRM
T
j
=125
℃
ALL
MIN
V
I
T
=100mA
MAX
mA
Ⅰ
–
Ⅲ
–
Ⅳ
80
I
G
=1.2I
GT
I
L
MAX
MIN
mA
Ⅱ
100
V
D
=2/3V
DRM
T
j
=125
℃
Gate open
dV/dt
1000
V/µs
2
PRODUCT DATA SHEET
Rev.37.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA41
Series
40A
Triacs
STATIC CHARACTERISTICS
Value
1.55
10
Unit
V
Symbol
Test Condition
T
j
=25
℃
V
TM
I
TM
=60A t
p
=380μs
V
DRM
= V
RRM
MAX
MAX
µA
T
j
=25
℃
I
DRM
I
RRM
T
j
=125
℃
5
mA
THERMAL RESISTANCES
Symbol
Test Condition
Value
1.1
Unit
TO-3P(Ins
）
℃
/W
R
th(j-c)
junction to case(AC)
TO-247(Non-Ins)
TG-C
0.91
0.65
ORDERING INFORMATION
B T A 4
1 – 8 0 0
B W
Triacs
V
DRM
、
V
RRM
:
A
：
TO-220A(Ins)
600
：
600V
800
：
800V
I
GT
：
B
：
TO-220A(Non-Ins)
B
：
I
GT1-3
≤50mA
1200
：
1200V
I
GT4
≤100mA
BW
：
I
GT1-3
≤50mA
I
T(RMS)
:40A
3
PRODUCT DATA SHEET
Rev.37.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA41
Series
40A
Triacs
PACKAGE MECHANICAL DATA
4
PRODUCT DATA SHEET
Rev.37.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA41
Series
40A
Triacs
Dimensions
Min.
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
29.8
Max.
Max.
1.543
A
39.2
30.2
20.2
20.5
21.6
23
B
30
1.173
Φ
0.161
0.106
1.181
1.189
0.795
0.807
0.85
C
D
E
F
0.905
Φ
0.169
G1
Φ
4.1
Φ
4.2
10.3
13.9
8
Φ
4.3
Φ
0.165
0.406
0.547
0.315
0.252
0.118
H
I
J(T1,T2)
K(T1,T2)
6.4
3
M
2.7
3.3
0.13
N
22.8
0.898
O
8.2
2.5
0.323
0.098
0.383
0.313
0.177
0.0315
Φ
0.079
Φ
0.051
Φ
0.061
0.124
0.25
P
Q
9.45
7.8
9.75
7.95
4.5
10.1
8.1
0.374
0.307
0.169
0.0307
0.398
0.319
R
S
Z(T1,T2)
G2(T1,T2)
G3
4.3
4.7
0.185
0.78
0.8
0.85
Φ
2.2
Φ
1.5
Φ
1.75
3.35
6.5
0.0335
Φ
0.087
Φ
0.059
Φ
0.069
0.132
Φ
2
Φ
1.1
Φ
1.3
Φ
1.55
3.15
6.35
9.75
0.6
Φ
0.043
G4
a
2.95
6.2
0.116
0.244
0.368
0.0228
b
0.256
c
9.35
0.58
10
0.384
0.0236
0.221
0.183
0.393
Z(GATE)
J(GATE)
K(GATE)
0.65
0.0256
5.6
4.65
5
PRODUCT DATA SHEET
Rev.37.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA41
Series
40A
Triacs
FIG.1:
Maximum power dissipation versus
FIG.2:
RMS on-state current versus case
RMS on-state current
temperature
P(w)
I
T(RMS)
(A)
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum values)
number of cycles
I
TSM
(A)
I
TM
(A)
FIG.5:
Non-repetitive surge peak on-state current
FIG.6:
Relative variations of gate trigger
current,holding current and latching current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (
Ⅰ
–
Ⅱ
–
Ⅲ
:dI/dt
<
50A/μs;
Ⅳ
:dI/dt < 10A/μs)
I
GT
,I
H
,I
L
(Tj)/I
GT
,I
H
,I
L
(Tj=25
℃
)
I
TSM
(A),I
2
t
（
A
2
s
）
6
PRODUCT DATA SHEET
Rev.37.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA41
Series
40A
Triacs
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties
7
PRODUCT DATA SHEET
Rev.37.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA41
Series
40A
Triacs
which may result from the use of such products and information.
8
PRODUCT DATA SHEET
Rev.37.0
2020
