WEIDA-BTB10-800BW
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Jiangsu Weida Semiconductor Co., Ltd.
BTA10/BTB10 Series 10A Triacs
DESCRIPTION:
With high ability to withstand the shock loading of Large
current, BTA10/BTB10 series triacs provide high dv/dt
rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrants
products especially recommended for use on inductive
load. From all three terminals to external heatsink,
BTA10 provides a rated insulation voltage of 2500 V
RMS
complying with UL standards (File ref: E516503).
TO-220
A
（
Ins
）
TO-220B
（
Non-Ins
）
MAIN FEATURES:
symbol
I
T(RMS)
value
10
unit
A
TO-220F
（
Ins
）
TO-263
V
DRM
/V
RRM
V
TM
600/800
≤1.5
V
V
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
Value
-40~150
-40~125
600/800
600/800
10
Unit
℃
℃
V
Storage junction temperature range
T
stg
T
j
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25
℃
)
Repetitive peak reverse voltage (T
j
=25
℃
)
RMS on-state current
V
DRM
V
RRM
I
T(RMS)
V
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
100
A
I
2
t value for fusing (t
p
=10ms)
Critical rate of rise of on-state current(I
G
=2×I
GT
)
Peak gate current
I
2
t
dI/dt
I
GM
55
50
4
A
2
s
A/μs
A
Average gate power dissipation
Peak gate power
P
G(
A
V)
P
GM
1
W
5
W
1
PRODUCT DATA SHEET
Rev.13.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA10/BTB10 Series 10A Triacs
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified)
3 Quadrants
：
Value
Parameter Test
Condition Quadrant
Unit
TW
SW
CW
BW
I
GT
V
GT
V
GD
I
H
5
10
35
50
mA
V
V
D
=12V,
R
L
=33Ω
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅰ
–
Ⅱ
–
Ⅲ
MAX
1.5
0.2
V
D
=V
DRM
MIN
V
I
T
=100mA
MAX
10
20
25
20
25
35
40
50
70
60
70
90
mA
Ⅰ
–
Ⅲ
I
G
=1.2I
GT
I
L
MAX
MIN
mA
Ⅱ
V
D
=2/3V
DRM
T
j
=125
℃
dV/dt
50
200
500
1000
V/µs
Gate open
4 Quadrants
：
Value
Parameter Test
Condition
Quadrant
Unit
C
B
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
25
50
50
70
mA
mA
V
I
GT
V
D
=12V,
R
L
=33Ω
MAX
V
GT
V
GD
I
H
ALL
1.5
0.2
V
D
=V
DRM
ALL
MIN
V
I
T
=100mA
MAX
40
50
70
60
70
90
mA
Ⅰ
–
Ⅲ
–
Ⅳ
I
G
=1.2I
GT
I
L
MAX
MIN
mA
Ⅱ
V
D
=2/3V
DRM
T
j
=125
℃
dV/dt
200
500
V/µs
Gate open
2
PRODUCT DATA SHEET
Rev.13.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA10/BTB10 Series 10A Triacs
STATIC CHARACTERISTICS
Symbol
Test Condition
T
j
=25
℃
Value
Unit
V
V
TM
I
TM
=14A t
p
=380μs
MAX
MAX
1.5
5
µA
T
j
=25
℃
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
=125
℃
1
mA
THERMAL RESISTANCES
Symbol
Test Condition
Value
2.5
Unit
TO-220A(Ins
）
TO-220B(Non-Ins
）
TO-220F(Ins
）
1.6
R
th(j-c)
junction to case(AC)
℃
/W
2.7
TO-263
1.7
ORDERING INFORMATION
B T
A 1
0 – 6 0 0
C W
B
：
I
GT1-3
≤50mA
、
I
GT4
≤100mA
C
：
I
GT1-3
≤25mA
、
I
GT4
≤50mA
TW
：
I
GT1-3
≤5mA
Triacs
V
DRM
、
V
RRM
:
I
T(RMS)
:10A
A:Insulated
B:Non-Insulated
600
：
600V
800
：
800V
SW
：
I
GT1-3
≤10mA
CW
：
I
GT1-3
≤35mA
BW
：
I
GT1-3
≤50mA
3
PRODUCT DATA SHEET
Rev.13.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA10/BTB10 Series 10A Triacs
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.4
Max.
4.6
Min.
Max.
A
B
4.47
0.173 0.176
0.181
0.61
0.46
1.21
2.4
0.88
0.7
0.024
0.018
0.035
C
0.50
1.27
0.02 0.028
C2
C3
D
1.32
2.72
9.7
0.048 0.050
0.052
0.094
0.339
0.386
0.258
0.107
0.382
0.409
0.274
8.6
E
9.8
10.4
6.95
F
6.55
G
2.54
3.75
0.1
H
28
29.8
1.102
1.173
L1
L2
L3
0.148
1.14
2.65
1.7
0.045
0.104
0.067
0.116
2.95
V1
45°
45°
TO-220A Ins
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.4
Max.
4.6
Min.
Max.
A
B
4.47
0.173 0.176
0.181
0.61
0.46
1.21
2.4
0.88
0.7
0.024
0.018
0.035
C
0.50
1.27
0.02 0.028
C2
C3
D
1.32
2.72
9.7
0.048 0.050
0.052
0.094
0.339
0.386
0.258
0.107
0.382
0.409
0.274
8.6
E
9.8
10.4
6.95
F
6.55
G
2.54
3.75
0.1
H
28
29.8
1.102
1.173
L1
L2
L3
V1
0.148
1.14
2.65
1.7
0.045
0.104
0.067
0.116
2.95
45°
45°
TO-220B Non-Ins
4
PRODUCT DATA SHEET
Rev.13.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA10/BTB10 Series 10A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.5
Max.
4.9
Min.
Max.
A
B
0.177
0.193
0.74
0.47
2.45
2.6
0.8
0.83
0.65
2.75
3
0.029 0.031 0.033
C
0.019
0.096
0.102
0.346
0.386
0.252
0.026
0.108
0.118
0.366
0.41
C2
C3
D
8.8
9.3
E
9.8
10.4
6.8
F
6.4
0.268
G
2.54
3.63
0.1
H
28
29.8
1.102
0.045
1.173
L1
L2
L3
V1
0.148
1.14
2.65
1.7
0
0.067
0.116
3.3
45°
0.13
45°
TO-220F Ins
Dimensions
Ref.
Millimeters
Inches
Typ.
Min.
Typ.
Max.
Min.
Max.
0.406
0.622
0.378
A
B
C
D
E
F
9.9
14.7
8.5
10.3
15.8
8.9
0.390
0.579
0.370
2.54
0.100
1.20
0.75
1.40
0.85
1.75
4.80
2.80
0.25
1.37
0.047
0.029
0.055
0.033
0.069
G
H
J
4.40
2.40
0
4.60
2.60
0.1
0.173 0.181 0.189
0.094 0.102 0.110
L
0
0.004 0.010
0.05 0.054
M
1.17
1.27
0.046
5
PRODUCT DATA SHEET
Rev.13.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA10/BTB10 Series 10A Triacs
FIG.1:
Maximum power dissipation versus
FIG.2:
RMS on-state current versus case
RMS on-state current
temperature
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum values)
number of cycles
FIG.5:
Non-repetitive surge peak on-state current
FIG.6:
Relative variations of gate trigger
current,holding current and latching current
versus junction temperature
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (
Ⅰ
–
Ⅱ
–
Ⅲ
:dI/dt
<
50A/μs;
Ⅳ
:dI/dt < 10A/μs)
6
PRODUCT DATA SHEET
Rev.13.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA10/BTB10 Series 10A Triacs
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information.
7
PRODUCT DATA SHEET
Rev.13.0
2020
