WEIDA-BTB24-800CW
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Jiangsu Weida Semiconductor Co., Ltd.
BTA24/BTB24 Series 25A Triacs
DESCRIPTION:
With high ability to withstand the shock loading of Large
current, BTA24/BTB24 series triacs provide high dv/dt
rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrants
products especially recommended for use on inductive
load. From all three terminals to external heatsink,
BTA24 provides a rated insulation voltage of 2500
V
RMS
complying with UL standards (File ref: E516503).
TO-220A
（
Ins
）
TO-220B
（
Non-Ins
）
TO-220F
（
Ins
）
TO-263
MAIN FEATURES:
symbol
I
T(RMS)
value
unit
A
25
600/800/1200/1600
≤1.5
V
DRM
/V
RRM
V
TM
V
TO-3P
（
Ins
）
V
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
T
stg
Value
Unit
℃
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25
℃
)
Repetitive peak reverse voltage (T
j
=25
℃
)
RMS on-state current
-40~150
-40~125
T
j
℃
V
DRM
V
RRM
I
T(RMS)
600/800/1200/1600
600/800/1200/1600
25
V
V
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
250
A
I
2
t value for fusing (t
p
=10ms)
I
2
t
340
50
A
2
s
Critical rate of rise of on-state current(I
G
=2×I
GT
)
dI/dt
A/μs
1
PRODUCT DATA SHEET
Rev.17.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA24/BTB24 Series 25A Triacs
Peak gate current
I
GM
P
G(
A
V)
P
GM
4
1
A
Average gate power dissipation
Peak gate power
W
W
10
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified)
3 Quadrants
：
Value
BW
Parameter Test
Condition
Quadrant
Unit
CW
I
GT
V
GT
V
GD
I
H
35
50
mA
V
V
D
=12V,
R
L
=33Ω
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅰ
–
Ⅱ
–
Ⅲ
MAX
1.3
0.2
V
D
=V
DRM
I
T
=100mA
MIN
V
MAX
60
70
80
80
90
mA
Ⅰ
–
Ⅲ
I
G
=1.2I
GT
I
L
MAX
MIN
mA
Ⅱ
100
V
D
=2/3V
DRM
T
j
=125
℃
dV/dt
1000
1500
V/µs
Gate open
4 Quadrants
：
Value
Parameter Test
Condition
Quadrant
Unit
C
B
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
25
50
50
70
mA
mA
V
I
GT
V
D
=12V,
R
L
=33Ω
MAX
V
GT
V
GD
I
H
ALL
1.5
0.2
V
D
=V
DRM
ALL
MIN
V
I
T
=100mA
MAX
60
70
90
75
80
mA
Ⅰ
–
Ⅲ
–
Ⅳ
I
G
=1.2I
GT
I
L
MAX
MIN
mA
Ⅱ
100
V
D
=2/3V
DRM
T
j
=125
℃
dV/dt
200
500
V/µs
Gate open
2
PRODUCT DATA SHEET
Rev.17.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA24/BTB24 Series 25A Triacs
STATIC CHARACTERISTICS
Symbol
Test Condition
T
j
=25
℃
Value
1.5
10
Unit
V
V
TM
I
TM
=35A t
p
=380μs
MAX
MAX
µA
T
j
=25
℃
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
=125
℃
3
mA
THERMAL RESISTANCES
Symbol
Test Condition
Value
1.5
Unit
TO-220A(Ins
）
TO-220F(Ins
）
1.6
R
th(j-c)
junction to case(AC)
℃
/W
TO-263
2.1
TO-3P
0.68
ORDERING INFORMATION
B T
A 2
4 – 8 0 0
C W
V
DRM
、
V
RRM
:
B
：
I
GT1-3
≤50mA
、
I
GT4
≤100mA
C
：
I
GT1-3
≤25mA
、
I
GT4
≤50mA
CW
：
I
GT1-3
≤35mA
Triacs
600
：
600V
800
：
800V
I
T(RMS)
:25A
A:Insulated
B:Non-Insulated
1200
：
1200V
1600
：
1600V
BW
：
I
GT1-3
≤50mA
3
PRODUCT DATA SHEET
Rev.17.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA24/BTB24 Series 25A Triacs
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.4
Max.
4.6
Min.
Max.
A
B
4.47
0.173 0.176
0.181
0.61
0.46
1.21
2.4
0.88
0.7
0.024
0.018
0.035
C
0.50
1.27
0.02 0.028
C2
C3
D
1.32
2.72
9.7
0.048 0.050
0.052
0.094
0.339
0.386
0.258
0.107
0.382
0.409
0.274
8.6
E
9.8
10.4
6.95
F
6.55
G
2.54
3.75
0.1
H
28
29.8
1.102
1.173
L1
L2
L3
0.148
1.14
2.65
1.7
0.045
0.104
0.067
0.116
2.95
V1
45°
45°
TO-220A Ins
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.4
Max.
4.6
Min.
Max.
A
B
4.47
0.173 0.176
0.181
0.61
0.46
1.21
2.4
0.88
0.7
0.024
0.018
0.035
C
0.50
1.27
0.02 0.028
C2
C3
D
1.32
2.72
9.7
0.048 0.050
0.052
0.094
0.339
0.386
0.258
0.107
0.382
0.409
0.274
8.6
E
9.8
10.4
6.95
F
6.55
G
2.54
3.75
0.1
H
28
29.8
1.102
1.173
L1
L2
L3
V1
0.148
1.14
2.65
1.7
0.045
0.104
0.067
0.116
2.95
45°
45°
TO-220B Non-Ins
4
PRODUCT DATA SHEET
Rev.17.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA24/BTB24 Series 25A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.5
Max.
4.9
Min.
Max.
A
B
0.177
0.193
0.74
0.47
2.45
2.6
0.8
0.83
0.65
2.75
3
0.029 0.031 0.033
C
0.019
0.096
0.102
0.346
0.386
0.252
0.026
0.108
0.118
0.366
0.41
C2
C3
D
8.8
9.3
E
9.8
10.4
6.8
F
6.4
0.268
G
2.54
3.63
0.1
H
28
29.8
1.102
0.045
1.173
L1
L2
L3
V1
0.148
1.14
2.65
1.7
0
0.067
0.116
3.3
45°
0.13
45°
TO-220F Ins
Dimensions
Ref.
Millimeters
Inches
Typ.
Min.
Typ.
Max.
Min.
Max.
0.406
0.622
0.378
A
B
C
D
E
F
9.9
14.7
8.5
10.3
15.8
8.9
0.390
0.579
0.370
2.54
0.100
1.20
0.75
1.40
0.85
1.75
4.80
2.80
0.25
1.37
0.047
0.029
0.055
0.033
0.069
G
H
J
4.40
2.40
0
4.60
2.60
0.1
0.173 0.181 0.189
0.094 0.102 0.110
L
0
0.004 0.010
0.05 0.054
M
1.17
1.27
0.046
5
PRODUCT DATA SHEET
Rev.17.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA24/BTB24 Series 25A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
Max.
Min.
Max.
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.055
0.059
0.118
A
B
C
D
E
F
G
H
I
4.40
1.45
4.50
4.60
1.55
0.173
0.057
0.565
0.02
0.177
0.059
1.50
14.35
0.50
15.60
0.70
0.60
2.80
0.024
0.110
2.70
2.90
0.106
0.622
0.803
0.594
0.213
0.043
0.053
0.110
15.80
20.40
15.10
5.40
16.50
21.10
15.50
5.65
15.30
0.602
J
1.10
1.40
K
L
1.35
1.50
2.80
2.90
4.35
3.00
0.114
0.171
R
TO-3P Ins
6
PRODUCT DATA SHEET
Rev.17.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA24/BTB24 Series 25A Triacs
FIG.1:
Maximum power dissipation versus
FIG.2:
RMS on-state current versus case
RMS on-state current
temperature
P(w)
I
T(RMS)
(A)
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum values)
number of cycles
I
TM
(A)
I
TSM
(A)
FIG.5:
Non-repetitive surge peak on-state current
FIG.6:
Relative variations of gate trigger
current,holding current and latching current
versus junction temperature
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (
Ⅰ
–
Ⅱ
–
Ⅲ
:dI/dt
<
50A/μs;
Ⅳ
:dI/dt < 10A/μs)
I
TSM
(A),I
2
t
（
A
2
s
）
I
GT
,I
H
,I
L
(Tj)/I
GT
,I
H
,I
L
(Tj=25
℃
)
7
PRODUCT DATA SHEET
Rev.17.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
BTA24/BTB24 Series 25A Triacs
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information.
8
PRODUCT DATA SHEET
Rev.17.0
2020
