WEIDA-SS8050
| Part # | WEIDA-SS8050 |
Download  | WEIDA-SS8050 |
Jiangsu Weida Semiconductor Co., Ltd.
NPN General Purpose Transistors
TO-92
P b
Lead(Pb)-Free
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
MAXIMUM RATINGS
(T =25˚C
unless otherwise noted)
A
Rating
Collector-Base Voltage
Symbol
Value
Unit
V
CBO
CEO
40
25
V
V
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
EBO
5
V
A
Collector Current-Continuous
I
1.5
C
Total Device Dissipation T
=25°C
P
D
W
A
1.0
T ,T
J
Junction and Storage, Temperature
-55 to +150
°C
stg
ELECTRICAL CHARACTERISTICS
(T =25˚C
unless otherwise noted)
A
Characteristics
Symbol
Unit
Max
Min
Typ
Collector-Base Breakdown Voltage
V
V
40
25
–
–
V
V
–
–
(BR)CBO
I =100µA,
I =0
C
E
Collector-Emitter Breakdown Voltage
I =0.1mA,
I =0
(BR)CEO
(BR)EBO
C
B
Emitter Base Breakdown Voltage
I =100µA,
I =0
V
5
–
–
–
–
–
V
E
C
Collectorcut-offcurrent
=40V, I
=0
µA
I
0.1
0.1
CBO
V
CB
E
Emitter cut-off current
=20V, I
=0
µA
µA
–
I
CEO
EBO
V
CE
E
Emitter cut-off current
=5V, I
=0
I
–
–
0.1
V
EB
C
PRODUCT DATA SHEET
Rev91.0 2020
1
Jiangsu Weida Semiconductor Co., Ltd.
ON CHARACTERISTICS
DC Current Gain
(1)
(2)
h
FE
h
FE
V
=1V, I
=100mA
85
40
400
–
–
CE
C
–
V
=1V, I
=800 mA
CE
C
Collector-Emitter Saturation Voltage
I =800mA,
I =80mA
V
–
–
–
–
V
V
0.5
CE(sat)
BE(sat)
C
B
Base-Emitter Saturation Voltage
I =800mA,
I =80mA
V
1.2
1
C
B
Base-Emitter ON Voltage
=1V, I
=10mA)
V
–
–
V
BE(ON)
V
CE
C
DYNAMIC CHARACTERISTICS
Transition frequency
–
f
T
MHz
100
–
V
=10 V, I
=50 mA,
f=30MHz
CE
C
CLASSIFICATION OF h
FE(2)
Rank
B
C
D
E
Range
85-160
120-200
160-300
300-400
PRODUCT DATA SHEET
2
Rev91.0 2020
Jiangsu Weida Semiconductor Co., Ltd.
1000
100
10
0.5
V
C
E
= 1V
I
I
3.0mA
B=
0.4
0.3
0.2
0.1
2.5mA
2.0mA
B=
I
B=
I
I
I
1.5mA
1.0mA
0.5mA
B=
B=
B=
1
0
0
0.4
0.8
1.2
1.6
(VoLTS)
2.0
0.1
1
10
100
1000
(mA)
I
C
, COLLECTOR CURRENT
V
CE
, COLLECTOR-EMITTER VOLTAGE
FIG.1 Static Characteristic
FIG.2 DC Current Gain
10000
1000
100
100
10
I
C
=10 I
B
V
CE
= 1V
V
BE
(sat)
1
0
V
CE
(sat)
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT
(mA)
(VoLTS)
V
BE
, BASE- EMITTER VOLTAGE
FIG.3 Base-Emitter On Voltage
FIG.4 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
1000
100
V
C
E
= 10V
f=1.0 MHz
I
E
=0
10
1
10
1
1
10
100
400
10
100
V ,COLLECTOR-BASE
VOLTAGE(V)
CE
I
,COLLECTORN CURRENT
C
FIG.6 Collector Output Capacitance
FIG.5 Current Gain Bandwidth Product
PRODUCT DATA SHEET
Rev91.0 2020
3
Jiangsu Weida Semiconductor Co., Ltd.
TO-92 Outline Dimensions
unit:mm
E
TO-92
Dim
A
B
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
3.70
1.40
C
C
D
E
G
H
J
0.55
0.51
4.70
–
4.70
1.270TYP
J
K
K
L
2.44
14.10
2.64
14.50
G
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties which
may result from the use of such products and information.
Rev91.0 2020
PRODUCT DATA SHEET
4
