WEIDA-WR0205

Part #WEIDA-WR0205
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WEIDA-WR0205
Jiangsu Weida Semiconductor Co., Ltd.  
WR0205 2A Sensitive SCRs  
DESCRIPTION:  
The WR0205 SCR series provide high dv/dt rate with  
strong resistance to electromagnetic interface.They  
are especially recommended for use on residual current  
circuit breaker, straight hair, igniter etc.  
MAIN FEATURES:  
unit  
TO-92  
TO-252-4R  
symbol  
value  
2.0  
I

T(RMS)  

V

DRM

/V

RRM  

I

GT  

A
600/800  
≤200  
V
μA  
SOT-89-3L  
TO-126  
SOT-223-3L  
TO-251-4R  
V

TM  

≤1.5  
V
SOT-89-2L  
ABSOLUTE MAXIMUM RATINGS:  
Parameter  
Symbol  
Value  
Unit  
Storage junction temperature range  
T

stg  

T

j  

-40~150  
-40~110  
600/800  
600/800  
2
℃
℃
V
Operating junction temperature range  
Repetitive peak off-state voltage (T

j

=25
℃
)  
Repetitive peak reverse voltage (T

j

=25
℃
)  
RMS on-state current  
V

DRM  

V

RRM  

I

T(RMS)  

V
A
Non repetitive surge peak on-state current  
(full cycle, F=50Hz)  
I

TSM  

I

2

t  
20  
2
A
I

2

t value for fusing (t

p

=10ms)  
A

2

s  
1
PRODUCT DATA SHEET  
Rev.54.0
2020  

Jiangsu Weida Semiconductor Co., Ltd.  
WR0205 2A Sensitive SCRs  
Critical rate of rise of on-state current (I

G

=2×I

GT

)  
dI/dt  
I

GM  

50  
0.2  
0.1  
0.5  
A/μs  
A
Peak gate current  
Average gate power dissipation  
Peak gate power  
P

G(
A
V)  

P

GM  

W
W
ELECTRICAL CHARACTERISTICS
(T

j

=25
℃
unless otherwise specified)  
Value  
Symbol  
Test Condition  
Unit  
MIN  
TYPE  
40  
MAX  
200  
1.5  
I

GT  

–
–
µA  
V
V

D

=12V, R

L

=33Ω  
V

GT  

0.5  
V

D

=V

DRM

T

j

=110
℃  
R

L

=3.3kΩ  
V

GD  

0.2  
–
–
V
I

H  

I

L  

I

T

=50mA  
–
–
–
–
2
3
mA  
mA  
I

G

=1.2I

GT  

V

D

=0.66×V

DRM

T

j

=110
℃  
G
极开路
R

GK

=1KΩ  
dV/dt  
10  
–
–
V/µs  
STATIC CHARACTERISTICS  
Symbol  
Value  
1.5  
Unit  
V
Test Condition  
T

j

=25
℃  
V

TM  

I

TM

=4A t

p

=380μs  
MAX  
µA  
T

j

=25
℃  
5
I

DRM  

I

RRM  

V

DRM

= V

RRM  

R

GK

=1KΩ  
MAX  
µA  
T

j

=110
℃  
100  
THERMAL RESISTANCES  
Symbol  
Test Condition  
Value  
Unit  
TO-92  
30  
TO-251-4R  
TO-252-4R  
TO-126  
R

th(j-c)  

junction to case(AC)  
℃
/W  
6.5  
2
PRODUCT DATA SHEET  
Rev.54.0
2020  

Jiangsu Weida Semiconductor Co., Ltd.  
WR0205 2A Sensitive SCRs  
SOT-223  
20  
25  
SOT-89  
SOT-89-2L  
ORDERING INFORMATION  
W R 02 05  
Weida  
SCR  
05:I

GT

≤200
µA  
I

T(RMS)

:
2A  
PACKAGE MECHANICAL DATA  
Dimensions  
Ref.  
Millimeters  
Inches  
Typ.  
Min. Typ. Max.  
Min.  
Max.  
0.071  
0.004  
0.122  
0.031  
0.013  
0.264  
0.146  
A
A1  
B
1.5  
1.6  
1.8  
0.10  
3.1  
0.059  
0.001  
0.114  
0.024  
0.009  
0.248  
0.130  
0.252  
0.063  
0.002  
0.118  
0.028  
0.010  
0.256  
0.138  
0.181  
0.091  
0.035  
0.069  
0.276  
0.035  
0.01 0.06  
2.9  
0.6  
3.0  
0.7  
B1  
C
0.8  
0.22 0.25  
0.32  
6.7  
D
6.3  
3.3  
6.5  
3.5  
4.6  
2.3  
0.9  
1.75  
7.0  
0.9  
E
3.7  
F
6.8  
F1  
G
H
0.7  
1.5  
6.7  
0.8  
1.1  
2.0  
7.3  
1.0  
0.028  
0.059  
0.264  
0.031  
0.043  
0.079  
0.287  
0.039  
J
SOT-223-3L  
K
3
PRODUCT DATA SHEET  
Rev.54.0
2020  

Jiangsu Weida Semiconductor Co., Ltd.  
WR0205 2A Sensitive SCRs  
Dimensions  
Ref.  
Millimeters  
Typ. Max.  
Inches  
Typ.  
Min.  
1.4  
Min.  
1.6 0.055  
0.52 0.013  
0.58 0.016  
0.44 0.014  
4.6 0.173  
Max.  
A
b
0.063  
0.197  
0.023  
0.017  
0.181  
0.35  
0.4  
b1  
c
0.35  
4.4  
D
D1  
E
1.55  
0.061  
2.35  
3.94  
2.55 0.091  
4.25 0.155  
0.102  
0.167  
E1  
e
1.500  
3.000  
0.060  
0.118  
e1  
SOT-89-3L  
L
0.9  
1.1 0.035  
Dimensions  
0.047  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
4.45  
4.32  
3.18  
Max.  
5.2  
Min.  
Max.  
A
B
C
D
E
F
4.6  
0.175 0.181 0.205  
4.6  
5.33  
4.19  
0.17  
0.181  
0.14  
0.21  
0.165  
0.021  
0.031  
–
3.55  
0.125  
0.407  
0.6  
–
0.533 0.016  
0.8  
–
0.024  
0
1.1  
1.27  
2.3  
–
–
–
0.043  
0.05  
0.091  
G
H
J
–
–
–
–
–
–
0.36  
12.7  
2.04  
1.86  
–
0.38  
0.5  
15  
2.66  
2.06  
4.3  
0.014 0.015  
0.5  
0.02  
0.591  
K
N
P
V
2.3  
0.08  
0.073  
–
0.091 0.105  
0.081  
0.169  
4
PRODUCT DATA SHEET  
Rev.54.0
2020  

Jiangsu Weida Semiconductor Co., Ltd.  
WR0205 2A Sensitive SCRs  
Dimensions  
Ref.  
Millimeters  
Inches  
Min. Typ. Max. Min. Typ. Max.  
A
B
2.10  
0.66  
5.15  
0.44  
0.44  
5.90  
2.30  
0.76  
2.50 0.083
 
0.091 0.098  
0.86 0.026
 
0.030
0.034  
5.48 0.203
 
0.210
0.216  
0.58 0.017
 
0.020
0.023  
0.58 0.017
 
0.020
0.023  
6.30 0.232
 
0.240
0.248  
0.209REF  
B2  
C
5.33  
0.51  
C2  
D
0.51  
6.10  
D2  
E
5.30REF  
6.60  
6.40  
2.19  
6.80 0.252
 
0.260
0.268  
0.190REF  
E2  
G
4.83REF  
2.29  
2.39 0.086
 
0.090
0.094  
H
10.60
11.20
11.80 0.417
0.441
0.465  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
Max.  
2.4  
Min.  
0.087  
0
Max.  
0.094  
0.004  
0.034  
0.215  
0.023  
0.023  
0.248  
A
A2  
B
2.2  
0
0.1  
0.66  
5.1  
0.86  
5.46  
0.58  
0.58  
6.3  
0.026  
0.201  
0.018  
0.017  
0.232  
B2  
C
0.46  
0.44  
5.9  
C2  
D
D1  
E
5.30REF  
0.211REF  
6.4  
4.63  
4.372  
9.8  
6.8  
0.252  
0.182  
0.268  
E1  
G
4.772 0.172  
0.188  
0.409  
0.048  
0.065  
H
10.4  
1.21  
1.65  
0.386  
0.043  
0.053  
L
1.09  
1.35  
L2  
V1  
V2  
7°  
7°  
0°  
6°  
0°  
6°  
5
PRODUCT DATA SHEET  
Rev.54.0
2020  

Jiangsu Weida Semiconductor Co., Ltd.  
WR0205 2A Sensitive SCRs  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
7.4  
Max.  
Min.  
Max.  
0.307  
0.441  
0.642  
0.161  
0.058  
0.034  
A
B
C
D
E
F
7.8  
11.2  
16.3  
4.1  
0.291  
0.417  
0.602  
0.154  
0.046  
0.026  
10.6  
15.3  
3.9  
1.17  
0.66  
1.47  
0.86  
G
H
K
2.29  
0.09  
2.5  
2.9  
0.6  
0.098  
0.018  
0.114  
0.024  
0.45  
6
PRODUCT DATA SHEET  
Rev.54.0
2020  

Jiangsu Weida Semiconductor Co., Ltd.  
WR0205 2A Sensitive SCRs  
FIG.1:
Maximum power dissipation versus RMS  
FIG.2:
RMS on-state current versus case  
on-state current  
temperature  
P(w)  
I

T(RMS)

(A)  
FIG.3:
Surge peak on-state current versus  
FIG.4:
On-state characteristics (maximum values)  
number of cycles  
I

TSM

(A)  
I

TM

(A)  
FIG.5:
Non-repetitive surge peak on-state current  
for a sinusoidal pulse with width tp<20ms, and  
corresponging value of I

2

t (dI/dt < 50A/μs)  
FIG.6:
Relative variations of gate trigger  
current, holding current and latching  
current versus junction temperature  
I

TSM

(A),I

2

t
(
A

2

s
)  
I

GT

,I

H

,I

L

(Tj)/I

GT

,I

H

,I

L

(Tj=25
℃
)  
7
PRODUCT DATA SHEET  
Rev.54.0
2020  

Jiangsu Weida Semiconductor Co., Ltd.  
WR0205 2A Sensitive SCRs  
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida  
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for  
such information nor use beyond it.  
Information mentioned in this document is subject to change without notice, apart from that when an  
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.  
Products and information provided in this document have no infringement of patents. Jiangsu Weida  
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties  
which may result from the use of such products and information.  
8
PRODUCT DATA SHEET  
Rev.54.0
2020