WEIDA-Z0105-NN
| Part # | WEIDA-Z0105-NN |
Download  | WEIDA-Z0105-NN |
Jiangsu Weida Semiconductor Co., Ltd.
Z01 Series 1A Triacs
DESCRIPTION:
With low holding and latching current, Z01 series
triacs are especially recommended for use on
middle and small resistance type power load.
MAIN FEATURES:
symbol
I
T(RMS)
value
1
unit
SOT-223-3L
SOT-89-3L
A
V
DRM
/V
RRM
V
TM
600/800
≤1.5
V
V
TO-92
SOT-223-2L
ABSOLUTE MAXIMUM RATINGS:
Parameter
Symbol
Value
-40~150
-40~125
600/800
600/800
1
Unit
℃
℃
V
Storage junction temperature range
T
stg
T
j
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25
℃
)
Repetitive peak reverse voltage (T
j
=25
℃
)
RMS on-state current
V
DRM
V
RRM
I
T(RMS)
V
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
16
A
I
2
t value for fusing (t
p
=10ms)
I
2
t
Ⅰ
–
Ⅱ
–
Ⅲ
Ⅳ
1.28
50
10
2
A
2
s
Critical rate of rise of on-state current
(I
G
=2×I
GT
)
dI/dt
A/μs
Peak gate current
I
GM
A
Average gate power dissipation
Peak gate power
P
G(
A
V)
P
GM
0.5
5
W
W
1
PRODUCT DATA SHEET
Rev.3.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
Z01 Series 1A Triacs
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified)
Z01xx
Parameter Test
Condition
Quadrant
Unit
03
3
05
5
09
10
10
10
25
25
Ⅰ-Ⅱ-Ⅲ
Ⅳ
I
GT
V
D
=12V,
R
L
=33Ω
5
7
mA
V
MAX
V
GT
V
GD
I
H
Ⅰ-Ⅱ-Ⅲ-Ⅳ
1.3
0.2
V
D
=V
DRM
I
T
=100mA
Ⅰ-Ⅱ-Ⅲ-Ⅳ
MIN
V
MAX
3
6
5
8
10
10
15
20
20
35
mA
Ⅰ-Ⅲ-Ⅳ
Ⅱ
I
G
=1.2I
GT
I
L
MAX
mA
10
12
V
D
=0.66×V
DRM
T
j
=125
℃
dV/dt
MIN
10
20
50
100
V/µs
Gate open
STATIC CHARACTERISTICS
Symbol
Test Condition
Value
1.5
5
Unit
V
TM
I
TM
=1.4A t
p
=380μs
V
DRM
= V
RRM
T
j
=25
℃
T
j
=25
℃
T
j
=125
℃
MAX
V
µA
I
DRM
I
RRM
MAX
0.5
mA
THERMAL RESISTANCES
Symbol
Test Condition
Value
Unit
TO-92
SOT-89/SOT-223
60
℃
/W
R
th(j-c)
junction to case(AC)
31
℃
/W
SOT-89-2L/SOT-223-2L
2
PRODUCT DATA SHEET
Rev.3.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
Z01 Series 1A Triacs
ORDERING INFORMATION
Z 0
1 0
5 – M A
A
：
TO-92
Triacs
B
：
SOT-89
N
：
SOT-223
V
DRM
、
V
RRM
:
03
：
I
GT1-4
≤5mA
07
：
I
GT1-4
≤7mA
09
：
I
GT1-4
≤10mA
10
：
I
GT1-4
≤25mA
I
T(RMS)
:1A
M
：
600
：
600V
N
：
800
：
800V
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Min. Typ. Max.
Inches
Typ.
Min.
Max.
0.071
0.004
0.122
0.031
0.013
0.264
0.146
A
A1
B
1.5
1.6
1.8
0.10
3.1
0.059
0.001
0.114
0.024
0.009
0.248
0.130
0.252
0.063
0.002
0.118
0.028
0.010
0.256
0.138
0.181
0.091
0.035
0.069
0.276
0.035
0.01 0.06
2.9
0.6
3.0
0.7
B1
C
0.8
0.22 0.25
0.32
6.7
D
6.3
3.3
6.5
3.5
4.6
2.3
0.9
1.75
7.0
0.9
E
3.7
F
6.8
F1
G
H
0.7
1.5
6.7
0.8
1.1
2.0
7.3
1.0
0.028
0.059
0.264
0.031
0.043
0.079
0.287
0.039
J
K
Dimensions
Ref.
Millimeters
Typ. Max.
Inches
Typ.
Min.
1.4
Min.
1.6 0.055
0.52 0.013
0.58 0.016
0.44 0.014
4.6 0.173
Max.
A
b
0.063
0.35
0.4
0.197
0.023
0.017
0.181
b1
c
0.35
4.4
D
D1
E
1.55
0.061
2.35
3.94
2.55 0.091
4.25 0.155
0.102
0.167
E1
e
1.500
3.000
0.060
0.118
e1
L
SOT-89
0.9
1.1 0.035
0.047
3
PRODUCT DATA SHEET
Rev.3.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
Z01 Series 1A Triacs
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.45
4.32
3.18
0.407
0.6
–
Max.
5.2
Min.
Max.
A
B
C
D
E
F
4.6
0.175 0.181 0.205
4.6
5.33
4.19
0.17
0.181
0.14
0.21
0.165
0.021
0.031
–
3.55
0.125
0.533 0.016
0.8
–
0.024
0
1.1
1.27
2.3
–
–
–
0.043
0.05
0.091
G
H
J
–
–
–
–
–
–
0.36
12.7
2.04
1.86
–
0.38
0.5
15
2.66
2.06
4.3
0.014 0.015
0.5
0.02
0.591
K
N
P
V
2.3
0.08
0.073
–
0.091 0.105
0.081
0.169
4
PRODUCT DATA SHEET
Rev.3.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
Z01 Series 1A Triacs
FIG.1:
Maximum power dissipation versus
FIG.2:
RMS on-state current versus case
RMS on-state current
temperature
FIG.3:
Surge peak on-state current versus
FIG.4:
On-state characteristics (maximum values)
number of cycles
FIG.6:
Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
FIG.5:
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (dI/dt < 50A/μs)
5
PRODUCT DATA SHEET
Rev.3.0
2020
Jiangsu Weida Semiconductor Co., Ltd.
Z01 Series 1A Triacs
I
nformation furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for
such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when an
agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu Weida
Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties
which may result from the use of such products and information.
6
PRODUCT DATA SHEET
Rev.3.0
2020
