Wild-Goose-WG2301
| Part # | Wild-Goose-WG2301 |
Download  | Wild-Goose-WG2301 |
WG2301
20V P-Channel MOSFET
SOT-23
WG2301
20V P-Channel MOSFET
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg= 3.3nC (Typ.).
□
BVDSS=-20V,I
D
=-3A
G
S
D
Marking:A1
B
□
R
DS
(on) : 110m Ω (Max) @V
G
=-4.5V
□
100% Avalanche Tested
To
p
V
iew
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
-20
V
V
DS
GS
D
Gate-Source Voltage
±
12
V
A
V
Drain Current-Continuous
Drain Current -Pulsed
(Not
e
1
)
-3
I
-10
1
A
I
DM
Maximum Power Dissipation
W
℃
D
P
Operating Junction and Storage Temp
e Range
-55 T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Juncti
-Ambient
(Note 2)
R
θJA
125
℃
/W
WildGoose Semiconductor
Rev
.
A
1.0,June,2015
1
WG2301
20V P-Channel MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max
Unit
Off Characteristics
DSS
GS
D
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
V
=0V I
=-250μA
-20
–
-24
–
V
DS
GS
I
DSS
V
=-20V,V =0V
–
-1
μA
Parameter
Symbol
Condition
Min
Typ Max
Unit
GS
DS
Gate-Body Leakage Current
I
GSS
V
=
±
12V,V =0V
–
–
±
100
nA
On Characteristics
(Not
e
3
)
DS
GS D
=V ,I
=-250μA
Gate Threshold Voltage
V
GS(th)
V
-0.4
-0.7
-1
V
GS
D
V
V
=-4.5V, I
=-3A
–
–
64 110
89 140
–
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
R
DS(ON)
g
FS
GS
D
=-2.5V, I
=-2A
DS
D
V
=-5V,I =-2A
–
(Note4)
Dynamic Characteristics
lss
Input Capacitance
C
–
–
–
405
–
–
–
PF
PF
PF
DS
GS
V
=-10
V
,
V =0
V
,
Output Capacitance
C
oss
75
55
F=1.0MHz
rss
Reverse Transfer Capacitance
Switching Characteristics
(Not
e
4
)
C
Turn-on Delay Time
Turn-on Rise Time
t
d(on)
–
–
–
–
–
–
–
11
35
–
–
nS
nS
nS
nS
nC
nC
nC
r
t
DD
D
GS
V
=-10V,I =-1A
V =-
Turn-Off Delay Time
Turn-Off Fall Time
(off)
30
–
GEN
4.5V,R
=10Ω
f
t
10
–
g
Total Gate Charge
Q
3.3
0.7
1.3
12
–
DS
D
GS
V
=-10V,I =-3A, V
=-
gs
Gate-Source Charge
Gate-Drain Charge
Q
2.5V
gd
Q
–
Drain-Source Diode Chara
stics
Diode Forward Voltage
(Note 3)
Diode Forward Current
Note2)
V
SD
V
–
–
–
–
-1.2
-3
V
A
GS
S
=0V,I =1.3A
S
I
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction
temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤
2%.
4. Guaranteed by design, not subject to
production
WildGoose Semiconductor
Rev
.
A
1.0,June,2015
2
WG2301
20V P-Channel MOSFET
Typical Characteristics
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature
T
J
-Junction Temperature(
℃
)
Figure 3 Power Di
ipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
WildGoose Semiconductor
Rev
.
A
1.0,June,2015
3
WG2301
20V P-Channel MOSFET
Typical Characteristics
(Continued)
Vgs Gate-Source Voltage (V)
T
J
-Junct
Temperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate
ce Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
WildGoose Semiconductor
Rev
.
A
1.0,June,2015
4
WG2301
20V P-Channel MOSFET
Typical Characteristics
(Continued)
Vds Drain-Source Voltage
Figure 13 Safe Operat
on Area
Square Wave Pluse Duration(sec)
Fi
re 14 Normalized Maximum Transient Thermal Impedance
WildGoose Semiconductor
Rev
.
A
1.0,June,2015
5
