Wild-Goose-WG2302

WG

2302  

2

0V

N

-Channel MOSFET  

SOT-23  

WG

2302  

2

0V

N

-Channel MOSFET  

Features:  

□

Low Intrinsic Capacitances.  

D

□

Excellent Switching Characteristics.  

□

Extended Safe Operating Area.  

□

Unrivalled Gate Charge :Qg=

10

nC (Typ.).  

G

□

BVDSS=

2

0V,I =

4.0

A

 

D

□

R (on)

 

:

5

0

m

Ω (Max) @V

 

=

2

.5V  

DS  

G

S

□

100% Avalanche

T

e

sted  

MARKING:

A

2SHB  

Schematic diagram  

Absolute Maximum Ratings (T

A

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Limit  

2

0  

Unit  

V

Drain-Source Voltage  

V

DS  

Gate-Source Voltage  

±12  

V

V

GS  

Drain Current-Continuous  

Drain Current-Pulsed

(Note 1)  

3.0  

A

I

D  

10  

A

I

DM  

Maximum Power Dissipation  

1.

0  

W

℃

P

D  

Operating Junction and Storage Temperat

ure R

ange  

-55

T

o

1

50  

T

J

,T

STG  

Thermal Characteris

t

ic  

Thermal Resistance,Junction-to-Ambient

(Note 2)  

R

θ

JA  

125  

℃

/W  

WildGoose Semiconductor

 

Rev. A1.0,June,2015  

1

WG

2302  

2

0V

N

-Channel MOSFET  

Electrical Characteristics (T

A

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250

μ

A  

V

DS

=

20

V,V

GS

=0V  

V

GS

=±12V,V

DS

=0V  

2

0  

–

–

–

–

–

1

V

μ

A  

nA  

I

GSS  

–

±100  

Gate Threshold Voltage  

V

GS(th)  

V

DS

=V

GS

,I

D

=250

μ

A  

V

GS

=2.5V, I

D

=

3.5

A  

V

GS

=4.5V, I

D

=

4.5

A  

0.45  

0.65  

37  

1.0  

5

0  

40  

V

–

–

mΩ  

mΩ  

Drain-Source On-State Resistance  

R

DS(ON)  

30  

Dynamic Characteristics

(Note4)  

Input Capacitance  

C

lss  

C

oss  

C

rss  

–

–

–

405  

75  

–

–

–

PF  

PF  

PF  

V

DS

=1

0

V,V

GS

=0V,  

Output Capacitance  

F=1.0MHz  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

55  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

11  

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=10V, R

L

=2.7

Ω  

35  

V

GS

=4.5V,

R

GEN

=3

Ω  

Turn-Off Delay Time  

30  

Turn-Off Fall Time  

10  

Total Gate Charge  

Q

g  

Q

gs  

Q

g

d  

3.3  

0.7  

1.3  

V

DS

=1

0

V,I

D

=

3.0

A,  

V

GS

=

2

.5V  

Gate-Source Charge  

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

Diode Forward Current

(Note 2)  

V

SD  

I

S  

–

–

–

1.2  

V

A

V

GS

=0V,I

S

=

4.0

A  

4.0  

WildGoose Semiconductor

 

Rev. A1.0,June,2015  

2

WG

2302  

2

0V

N

-Channel MOSFET  

Typical Characteristics  

WildGoose Semiconductor

 

Rev. A1.0,June,2015  

3