Wild-Goose-WG2310
| Part # | Wild-Goose-WG2310 |
Download  | Wild-Goose-WG2310 |
WG23
10
60
V
N
-Channel MOSFET
SOT-23
WG23
10
6
0V
N
-Channel MOSFET
1.GATE
2.SOURCE
3.DRAIN
Features:
□
Low Intrinsic Capacitances.
□
Excellent Switching Characteristics.
□
Extended Safe Operating Area.
□
Unrivalled Gate Charge :Qg=
6
nC (Typ.).
□
BVDSS=
6
0V,I =
3
A
D
□
R (on)
:
9
0
m
Ω
(
Max) @V
=
10
V
DS
G
Marking:
MS10
□
100% Avalanche
T
e
sted
Maximum ratings ( Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Value
60
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
V
±20
Continuous Drain Current
3
Pulsed Diode Curren
IDM
IS
10
A
Continuous Source-Dra
rrent(Diode Conduction)
Power Dissipation
0.8
PD
1.25
357
W
℃
/W
℃
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction
RθJA
TJ
150
Storage Temperature
TSTG
-55~+150
℃
WildGoose Semiconductor
Rev. A1.0,June,2015
1
WG23
10
60
V
N
-Channel MOSFET
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
V(BR)DSS VGS
= 0V, ID = 250µA
60
V
V
VGS(th)
IGSS
VDS =VGS, ID = 250µA
VDS =0V, VGS = ±20V
VDS = 60V, VGS =0V
VGS = 10V, ID = 3 A
VGS = 4.5V, ID = 2 A
VDS = 4.5V, ID = 3A
IS=1A,VGS=0V
0.9
2
±100
nA
µA
mΩ
mΩ
S
Zero gate voltage drain current
IDSS
72
82
7
95
Drain-source on-state resistancea
Forward transconductancea
RDS(on)
100
gfs
Diode forward voltage
Dynamic
VSD
.8
1.2
V
Input capacitance
Ciss
Coss
Crss
Qg
247
34
20
6
pF
pF
pF
nC
nC
nC
Ω
VDS = 10V,VGS =0V,
f=1MHz
Output capacitance
Reverse transfer capacitanceb
Total gate charge
4.5
VDS = 10V
GS = 4.5V,
ID = 3A
Gate-source charge
Gate-drain charge
Qgs
Qgd
Rg
1
1.3
5
Gate resistance
Switchingb
f=1MHz
Turn-on delay time
td(on)
7
15
20
25
20
ns
ns
ns
ns
VDD= 10V
RL=10Ω, ID ≈ 1A,
VGEN= 4.5V,Rg=6Ω
Rise time
15
15
10
Turn-off delay time
Fall time
td(off)
tf
Drain-source body di
characteristics
Continuous Source-Drain Diode
Current
Pulsed Diode forward Curren
IS
Tc=25
℃
1.2
20
A
A
ISM
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
WildGoose Semiconductor
Rev. A1.0,June,2015
2
WG23
10
60
V
N
-Channel MOSFET
Typical Characteristics
WildGoose Semiconductor
Rev. A1.0,June,2015
3
WG23
10
60
V
N
-Channel MOSFET
Package Dimension
SOT-23
Unit: mm
WildGoose Semiconductor
Rev. A1.0,June,2015
5
